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BLT52-T [NXP]

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power;
BLT52-T
型号： BLT52-T
厂家： NXP    NXP
描述：

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power

晶体 射频双极晶体管 CD 放大器
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BLT52  
UHF power transistor  
1998 Jan 28  
Product specification  
Supersedes data of 1997 Oct 15  
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
FEATURES  
PINNING  
PIN  
• Emitter ballasting resistors for an optimum  
temperature profile  
DESCRIPTION  
1, 4, 5, 8  
2, 3  
emitter  
base  
• Gold metallization ensures excellent reliability.  
6, 7  
collector  
APPLICATIONS  
• Common emitter class-B operation in portable radio  
transmitters in the 470 MHz communication band.  
8
5
handbook, halfpage  
DESCRIPTION  
NPN silicon planar epitaxial power transistor encapsulated  
in a ceramic SOT409A SMD package.  
1
4
Top view  
MBK150  
Fig.1 Simplified outline SOT409A.  
QUICK REFERENCE DATA  
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.  
f
VCE  
(V)  
PL  
(W)  
Gp  
(dB)  
ηC  
(%)  
MODE OF OPERATION  
(MHz)  
≥8  
≥50  
typ. 65  
≥50  
7.5  
6
7
3
typ. 9.5  
≥8  
CW, class-B  
470  
typ. 9.5  
typ. 55  
1998 Jan 28  
2
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
20  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
−
−
−
−
−
V
V
V
A
W
open base  
10  
open collector  
3
collector current (DC)  
total power dissipation  
storage temperature  
2.5  
13  
Ptot  
Tstg  
Tj  
Tmb ≤ 60 °C  
−65  
+150  
200  
°C  
°C  
operating junction temperature  
−
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
K/W  
Rth j-mb  
thermal resistance from junction to mounting base Ptot = 13 W; Tmb ≤ 60 °C  
8
MGM485  
10  
handbook, halfpage  
I
C
(A)  
1
−1  
10  
2
1
10  
10  
V
(V)  
CE  
Tmb = 60 °C.  
Fig.2 DC SOAR.  
1998 Jan 28  
3
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
V(BR)CBO collector-base breakdown voltage  
open emitter; IC = 20 mA  
20  
10  
3
−
−
−
−
1
−
−
−
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 40 mA  
−
V
V(BR)EBO emitter-base breakdown voltage  
open collector; IE = 4 mA  
VBE = 0; VCE = 7.5 V  
−
V
ICES  
hFE  
Cc  
collector leakage current  
DC current gain  
−
−
mA  
IC = 1.2 A; VCE = 5 V  
25  
−
−
collector capacitance  
feedback capacitance  
IE = ie = 0; VCB = 7.5 V; f = 1 MHz  
IC = 0; VCE = 7.5 V; f = 1 MHz  
24  
17  
pF  
pF  
Cre  
−
MGM486  
MGM487  
100  
50  
handbook, halfpage  
handbook, halfpage  
C
c
h
FE  
(pF)  
40  
80  
60  
40  
20  
30  
20  
10  
0
0
0
0.4  
0.8  
1.2  
1.6  
I
2.0  
(mA)  
0
4
8
12  
16  
V
20  
(V)  
C
CB  
VCE = 5 V; Tj = 25 °C.  
Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.  
IE = ie = 0; f = 1 MHz; Tj = 25 °C.  
Fig.3 DC current gain as a function of collector  
current; typical values.  
Fig.4 Collector capacitance as a function of  
collector-base voltage; typical values.  
1998 Jan 28  
4
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
APPLICATION INFORMATION  
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.  
f
VCE  
(V)  
PL  
(W)  
Gp  
(dB)  
ηC  
(%)  
MODE OF OPERATION  
(MHz)  
≥8  
≥50  
typ. 65  
≥50  
7.5  
6
7
3
typ. 9.5  
≥8  
CW, class-B  
470  
typ. 9.5  
typ. 55  
Ruggedness in class-B operation  
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the  
following conditions: CW, class-B operation; f = 470 MHz; VCE = 9 V and PL = 7 W; Tmb ≤ 60 °C.  
MGD257  
MBK250  
10  
100  
10  
handbook, halfpage  
handbook, halfpage  
η
G
C
P
p
L
(%)  
(dB)  
8
G
(W)  
8
p
80  
6
4
60  
40  
6
4
η
C
20  
0
2
2
0
0
0
0
2
4
6
8
1
2
3
P
(W)  
P
(W)  
IN  
L
CW, class-B operation; f = 470 MHz; VCE = 6 V;  
CW, class-B operation; f = 470 MHz; VCE = 6 V;  
tuned at PL = 3 W; Tmb ≤ 60 °C.  
tuned at PL = 3 W; Tmb ≤ 60 °C.  
Fig.5 Power gain and collector efficiency as  
functions of load power; typical values.  
Fig.6 Load power as a function of input power;  
typical values.  
1998 Jan 28  
5
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
MGD259  
MBK251  
12  
80  
C
(%)  
10  
handbook, halfpage  
handbook, halfpage  
η
G
p
P
L
(dB)  
10  
G
p
(W)  
8
70  
8
6
4
2
0
60  
50  
40  
30  
20  
6
4
η
C
2
0
0
0
2
4
6
8
10  
0.5  
1.0  
1.5  
2.0  
P
(W)  
L
P
(W)  
IN  
CW, class-B operation; f = 470 MHz; VCE = 7.5 V;  
CW, class-B operation; f = 470 MHz; VCE = 7.5 V;  
tuned at PL = 7 W; Tmb ≤ 60 °C.  
tuned at PL = 7 W; Tmb ≤ 60 °C.  
Fig.7 Power gain and collector efficiency as  
Fig.8 Load power as a function of input power;  
typical values.  
functions of load power; typical values.  
MBK252  
MBK253  
20  
16  
handbook, halfpage  
handbook, halfpage  
G
p
G
p
(dB)  
(dB)  
16  
12  
12  
8
8
4
0
4
0
100  
150  
200  
250  
300  
f (MHz)  
400  
420  
440  
460  
480  
f (MHz)  
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.  
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.  
Fig.9 Power gain as a function of frequency;  
typical values.  
Fig.10 Power gain as a function of frequency;  
typical values.  
1998 Jan 28  
6
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
MBK254  
MBK255  
6
4
handbook, halfpage  
handbook, halfpage  
Z
Z
i
L
(Ω)  
(Ω)  
2
0
r
R
X
i
L
4
L
2
0
−2  
−4  
−6  
x
i
−2  
100  
100  
150  
200  
250  
300  
f (MHz)  
150  
200  
250  
300  
f (MHz)  
CW, class-B operation; VCE = 7.5 V; PL = 7 W; T  
≤ 60 °C.  
CW, class-B operation; VCE = 7.5 V; PL = 7 W; T  
≤ 60 °C.  
mb  
mb  
Fig.11 Input impedance as a function of frequency  
(series components); typical values.  
Fig.12 Load impedance as a function of frequency  
(series components); typical values.  
MGD260  
MGD261  
1.2  
4
handbook, halfpage  
handbook, halfpage  
Z
L
(Ω)  
Z
i
(Ω)  
R
L
r
i
3
2
1
0.8  
x
i
0.4  
X
L
0
400  
0
400  
420  
440  
460  
480  
420  
440  
460  
480  
f (MHz)  
f (MHz)  
CW, class-B operation; VCE = 7.5 V; PL = 7 W; T  
≤ 60 °C.  
CW, class-B operation; VCE = 7.5 V; PL = 7 W; T  
≤ 60 °C.  
mb  
mb  
Fig.13 Input impedance as a function of frequency  
(series components); typical values.  
Fig.14 Load impedance as a function of frequency  
(series components); typical values.  
1998 Jan 28  
7
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
MOUNTING RECOMMENDATIONS  
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted  
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12  
(0.5 mm diameter) through metallized holes filled with solder.  
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted  
on the printed-circuit board.  
0.60 (4×)  
f
1.87 (2×)  
0.80 (2×)  
0.50 (12×)  
1.00 (8×)  
7.38 3.60  
1.00 (9×)  
MGK390  
4.60  
Dimensions in mm.  
Fig.15 Reflow soldering footprint for SOT409A.  
1998 Jan 28  
8
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
PACKAGE OUTLINE  
Ceramic surface mounted package; 8 leads  
SOT409A  
D
A
D
2
B
c
w
H
1
B
2
L
E
H
E
2
A
w
e
b
α
1
Q
1
0
2.5  
scale  
5 mm  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
UNIT  
mm  
A
b
c
D
D
E
E
e
H
H
L
Q
w
w
2
α
2
2
1
1
1
0.58  
0.43  
0.23  
0.18  
2.36  
2.06  
5.94  
5.03  
5.16  
5.00  
4.93  
4.01  
4.14  
3.99  
7.47  
7.26  
4.39  
4.24  
1.02  
0.51  
0.10  
0.00  
7°  
0°  
1.27  
0.050  
0.25  
0.25  
0.023 0.009  
0.017 0.007  
0.093  
0.081  
0.234 0.203 0.194 0.163  
0.198 0.197 0.158 0.157  
0.294 0.173 0.040 0.004  
0.286 0.167 0.020 0.000  
7°  
0°  
inches  
0.010 0.010  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-06-28  
SOT409A  
1998 Jan 28  
9
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Jan 28  
10  
Philips Semiconductors  
Product specification  
UHF power transistor  
BLT52  
NOTES  
1998 Jan 28  
11  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,  
Fax. +43 160 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Belgium: see The Netherlands  
Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 0044  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,  
Tel. +27 11 470 5911, Fax. +27 11 470 5494  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615800, Fax. +358 9 61580920  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 3 301 6312, Fax. +34 3 301 4107  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2686, Fax. +41 1 488 3263  
Hungary: see Austria  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Indonesia: see Singapore  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
Uruguay: see South America  
Vietnam: see Singapore  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA57  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125108/00/03/pp12  
Date of release: 1998 Jan 28  
Document order number: 9397 750 03238  

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