BLV33F [NXP]
VHF linear power transistor; 甚高频线性功率晶体管
| 型号： | BLV33F |
| 厂家： | 
NXP |
| 描述： | VHF linear power transistor |
| 文件： | 总20页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33F
VHF linear power transistor
1996 Oct 10
Product specification
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
FEATURES
PINNING - SOT119A
• Internally matched input for wideband operation and
high power gain
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
b
c
e
e
emitter
emitter
base
• Diffused emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
collector
emitter
emitter
APPLICATIONS
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
handbook, halfpage
DESCRIPTION
1
2
4
6
NPN silicon planar epitaxial transistor encapsulated in a
1⁄2” 6 lead SOT119A capstan package with ceramic cap.
All leads are isolated from the flange.
c
3
5
b
e
MAM269
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
sync compr.(2)
sync in/sync out
(%)
(1)
(1)
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
IC, IC(ZS)
(A)
Th
(°C)
dim
Po sync
(W)
GP
(dB)
(dB)
70
25
70
−55
−55
−
>13
>13.5
CW, class-A
224.25
224.25
25
28
3.2
0.2
typ. 19
typ. 85
typ. 14.8
typ. 10.5
CW, class-AB
30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-emitter voltage
CONDITIONS
VBE = 0
MIN.
MAX.
65
UNIT
VCESM
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
collector-emitter voltage
emitter-base voltage
open base
33
V
open collector
4
V
collector current (DC)
average collector current
peak collector current
total power dissipation (DC)
RF power dissipation
12.5
12.5
20
A
IC(AV)
ICM
A
f > 1 MHz
A
Ptot
Tmb = 25 °C
133
162
+150
200
W
W
Prf
f > 1 MHz; Tmb = 25 °C
Tstg
Tj
storage temperature
−65
°C
°C
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb(dc) thermal resistance from junction to mounting Pdiss = 80 W; Tmb = 82 °C;
base (DC dissipation) Th = 70 °C
Rth j-mb(rf) thermal resistance from junction to mounting Pdiss = 80 W; Tmb = 82 °C;
1.43
K/W
K/W
K/W
1.17
0.2
base (RF dissipation)
Th = 70 °C
Rth mb-h
thermal resistance from mounting base to
heatsink
Pdiss = 80 W; Tmb = 82 °C;
Th = 70 °C
MGG132
MGG133
2
10
200
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
C
(A)
150
(2)
(1)
10
(1)
(3)
(2)
100
1
1
50
0
2
50
100
10
10
V
(V)
T
(°C)
CE
h
(1) Tmb = 25 °C.
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
(2)
Th = 70 °C.
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 10
3
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG144
2.0
R
th j-h
(K/W)
1.8
1.6
1.4
1.2
1.0
T = 200 °C
j
175 °C
150 °C
125 °C
100 °C
75 °C
0
50
100
150
P
(W)
tot
Rth mb-h = 0.2 K/W.
Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters.
Example
Nominal class-A operation (without RF signal): VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Figure 4 shows:
Rth j-h = max. 1.63 K/W
Tj = max. 200 °C.
Typical device:
Rth j-h = typ.1.53 K/W
Tj = typ. 192 °C.
1996 Oct 10
4
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CES collector-emitter breakdown voltage VBE = 0; IC = 25 mA
V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA
65
33
4
−
−
V
−
−
V
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 10 mA
VBE = 0; VCE = 30 V
−
−
V
ICES
hFE
VCEsat
fT
collector cut-off current
DC current gain
−
−
1
mA
VCE = 25 V; IC = 3 A; note 1
15
−
50
0.75
680
100
−
collector-emitter saturation voltage IC = 6 A; IB = 0.6 A; note 1
V
transition frequency
VCB = 25 V; IE = −3 A;
−
−
MHz
f = 100 MHz; note 2
VCB = 25 V; IE = −6 A;
−
750
−
MHz
f = 100 MHz; note 2
Cc
collector capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz
IC = 50 mA; VCE = 25 V; f = 1 MHz
−
−
−
155
88
3
−
−
−
pF
pF
pF
Cre
Ccf
feedback capacitance
collector-flange capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0.01.
1996 Oct 10
5
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG129
MGG130
600
75
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
(1)
400
50
25
(2)
200
0
0
0
0
20
40
5
10
15
V
(V)
CB
I
(A)
C
Tj = 25 °C.
(1) VCE = 25 V.
(2) VCE = 5 V.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
Fig.6 Collector capacitance as a function of
collector-base voltage; typical values.
MGG118
MGG131
10
1000
handbook, halfpage
handbook, halfpage
f
T
(MHz)
800
I
C
(A)
(1)
(2)
600
400
200
0
1
−1
10
0.5
1
1.5
2
−0
−5
−10
−15
V
(V)
I
(A)
BE
E
VCE = 25 V.
(1) Th = 70 °C.
(2) Th = 25 °C.
VCB = 25 V; f = 100 MHz; Tj = 25 °C.
Fig.7 Transition frequency as a function of emitter
current; typical values.
Fig.8 Collector current as a function of
base-emitter voltage; typical values.
1996 Oct 10
6
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
APPLICATION INFORMATION
RF performance in VHF class-A operation (linear power amplifier)
(1)
(1)
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
IC
(A)
Th
(°C)
dim
Po sync
GP
(dB)
(dB)
−55
−55
−52
−55
(W)
70
70
70
25
>13
>13.5
typ. 14.5
typ. 22
typ. 19
typ. 14.5
typ. 14.5
typ. 14.8
CW, class-A
224.25
25
3.2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
C5
C6
+V
+V
BB
CC
C9
R1
C10
C13
L4
L2
D.U.T.
C3
C4
C7
C8
C11
L5
C1
C15
L1
L6
50 Ω
input
50 Ω
output
L3
C14
C2
C12
MGG146
Fig.9 Class-A test circuit at fvision = 224.25 MHz.
1996 Oct 10
7
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
List of components used in test circuit (see Figs 9 and 10).
COMPONENT
C1, C15
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip
capacitor; note 1
560 pF, 500 V
C2, C4, C12, C14
C3
film dielectric trimmer
4 to 40 pF
2222 809 08002
multilayer ceramic chip
capacitor; note 1
10 pF, 500 V
C5
multilayer ceramic chip
capacitor
470 nF, 50 V
680 pF, 50 V
47 pF, 500 V
2222 856 48474
2222 852 13681
C6, C10
C7, C8
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor; note 1
placed 8 mm from
transistor edge
C9
polyester capacitor
330 nF
C11
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
C13
L1
solid tantalum capacitor
6.8 µF, 35 V
2 turns of 1.6 mm enamelled
Cu wire
int. diameter 5 mm
length 5 mm
leads 2 × 3 mm
L2
L3
L4
microchoke
1 µH
30 Ω
4322 057 01080
stripline; note 2
6 mm × 32.7 mm
2 turns of closely wound
1 mm enamelled Cu wire
int. diameter 5 mm
leads 2 × 10 mm
L5
L6
stripline; note 2
30 Ω
10 Ω
6 mm × 24 mm
2 turns of 1.6 mm enamelled
Cu wire
int. diameter 4 mm
length 4.5 mm
leads 2 × 3 mm
R1
carbon resistor
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
8
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
115
rivets
rivets
50
rivets
rivets
+V
+V
CC
BB
C13
R1
C5
C10
C6
C9
C2
L1
C14
L4
C11
L2
C3
C7
50 Ω
input
50 Ω
output
L3
L5
L6
C1
C15
C8
C12
C4
MGG149
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit.
1996 Oct 10
9
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG134
MGG135
−44
30
handbook, halfpage
handbook, halfpage
d
im
(dB)
15
14
13
12
11
(1)
(2)
d
cm
G
p
G
(%)
−48
p
(dB)
20
−52
−56
−60
−64
(2)
(1)
(2)
(1)
10
d
im
0
0
10
20
30
40
20
40
P
(W)
P
(W)
o sync
o sync
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
(2) Th = 70 °C.
(2) Th = 70 °C.
Fig.11 Intermodulation distortion and power gain
as a functions of output power.
Fig.12 Cross-modulation distortion as a function of
output power.
Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak
sync level (see Fig.11). Intermodulation distortion of input signal ≤−70 dB.
Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB (see Fig.12).
Ruggedness in class-A operation
The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to
30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th = 70 °C; f = 224.25 MHz;
Rth mb-h = 0.2 K/W.
1996 Oct 10
10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG137
MGG136
6
1
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
Z
i
(Ω)
r
i
4
x
i
0
R
X
L
2
L
0
50
−1
50
150
250
150
250
f (MHz)
f (MHz)
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
MGG138
30
handbook, halfpage
G
p
(dB)
20
10
0
50
150
250
f (MHz)
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.15 Power gain as a function of frequency;
typical values.
1996 Oct 10
11
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
RF performance in VHF class-AB operation (C.W.).
MODE OF
OPERATION
f
VCE
(V)
IC, IC(ZS)
(A)
Th
(°C)
PL
(W)
IC
(A)
ηC
(%)
GP
(dB)(1)
(MHz)
40
85
typ. 2.75 typ. 52
typ. 4.25 typ. 71
typ. 11.5
typ. 10.5
CW, class-AB
224.25
28
0.2
70
Note
1. Gain compression point of 1 dB is at typical 85 W (minimum 75 W). Using a 3rd-order amplitude transfer
characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television
service (negative modulation, C.C.I.R. system).
C6
+V
+V
CC
BB
C10
R1
C15
C7
L4
L2
C11
D.U.T.
C2
L1
C4
C5
C8
C9
C13
C16
C1
C18
L6
50 Ω
50 Ω
L3
L5
C12
C17
C3
C14
MGG147
Fig.16 Class-AB test circuit at fvision = 224.25 MHz.
1996 Oct 10
12
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
List of components used in test circuit (see Figs 16 and 17).
COMPONENT
C1, C18
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip
capacitor; note 1
620 pF, 100 V
C2
multilayer ceramic chip
capacitor; note 1
27 pF, 500 V
C3
C4
film dielectric trimmer
2 to 18 pF
2222 809 09003
multilayer ceramic chip
capacitor; note 1
30 pF, 500 V
C5, C14
C6, C10
film dielectric trimmer
4 to 40 pF
2222 809 08002
2222 856 48474
multilayer ceramic chip
capacitor
470 nF, 50 V
C7, C15
C8, C9
C11, C12
C13
multilayer ceramic chip
capacitor
680 pF, 50 V
68 pF, 500 V
43 pF, 500 V
39 pF, 500 V
3.3 pF, 500 V
1.4 to 5.5 pF
2222 852 13681
multilayer ceramic chip
capacitor; note 1
placed 6.4 mm from
transistor edge
multilayer ceramic chip
capacitor; note 1
placed 10 mm from
transistor edge
multilayer ceramic chip
capacitor; note 1
C16
multilayer ceramic chip
capacitor; note 1
C17
L1
film dielectric trimmer
2222 809 09001
2 turns of 1.6 mm enamelled
Cu wire
int. diameter 4.5 mm
length 4 mm
leads 2 × 4 mm
L2
3 turns of 1 mm closely
int. diameter 5 mm
wound enamelled Cu wire
leads 2 × 7 mm
L3
L4
stripline; note 2
30 Ω
30 Ω
6 mm × 47.8 mm
2 turns of 1 mm closely
wound enamelled Cu wire
int. diameter 5 mm
leads 2 × 8 mm
L5
L6
stripline; note 2
6 mm × 42.9 mm
2 turns of 1.6 mm enamelled
Cu wire
int. diameter 4 mm
length 4 mm
leads 2 × 3 mm
R1
carbon resistor
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
150
rivets
rivets
57
rivets
rivets
+V
+V
BB
CC
C10
C17
C3
C6
C15
L4
C7
R1
L2
C8
C4
C13
C11
C12
C1
C2
C18
C16
50 Ω
input
50 Ω
output
L3
L5
L6
L1
C9
C5
C14
MGG151
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
Fig.17 Component layout and printed-circuit board for 224.25 MHz class-AB test circuit.
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG140
MGG139
100
15
75
handbook, halfpage
handbook, halfpage
P
L
η
(W)
80
c
G
p
η
c
(dB)
(%)
G
p
60
40
20
10
50
0
0
5
0
25
100
2
4
6
8
50
P
(W)
P
(W)
L
S
VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 °C; fvision = 224.25 MHz.
VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 °C; fvision = 224.25 MHz.
Fig.18 Load power as a function of source power;
typical values.
Fig.19 Power gain and efficiency as functions of
load power; typical values.
Ruggedness in class-AB operation
The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR ≤2 through all phases) up to
60 W (RMS) and 85 W (PEP) under the following conditions:VCE = 28 V; Th = 70 °C; f = 224.25 MHz; Rth mb-h = 0.2 K/W.
1996 Oct 10
15
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG142
MGG141
4
1
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
R
L
Z
i
(Ω)
r
i
x
i
2
0
X
L
0
50
−1
50
150
250
150
250
f (MHz)
f (MHz)
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.20 Input impedance as a function of frequency
(series components); typical values.
Fig.21 Load impedance as a function of frequency
(series components); typical values.
MGG143
20
handbook, halfpage
G
p
(dB)
10
0
50
150
250
f (MHz)
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.22 Power gain as a function of frequency;
typical values.
1996 Oct 10
16
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
PACKAGE OUTLINE
22 max
6.35
0.14
4
min
ceramic
5.7
5.3
1
3
5
2
4
6
6.48
25.2
max
13
max
5.5
5.0
3.8
min
12.96
18.42
5.7
5.3
BeO
metal
3.35
3.04
(2x)
MBC877
12.2
2.5
4.50
4.05
7.5
max
Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.
Fig.23 SOT119A.
1996 Oct 10
17
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 10
18
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
NOTES
1996 Oct 10
19
Philips Semiconductors – a worldwide company
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Tel. +31 40 27 82785, Fax. +31 40 27 88399
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220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bualgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 247 9145, Fax. +7 095 247 9144
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/1200/01/pp20
Date of release: 1996 Oct 10
Document order number: 9397 750 01036
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