BLV946 [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLV946 |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总12页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV946
UHF power transistor
1997 Oct 30
Product specification
Supersedes data of 1995 Jun 29
Philips Semiconductors
Product specification
UHF power transistor
BLV946
FEATURES
PINNING - SOT273A
PIN
• Internal input and output matching for easy matching,
high gain and efficiency
DESCRIPTION
1
2
3
4
5
6
emitter
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
emitter
collector
base
• Gold metallization ensures excellent reliability.
emitter
emitter
APPLICATIONS
• Base stations in the 850 to 960 MHz frequency range.
DESCRIPTION
2
4
6
handbook, halfpage
NPN silicon planar transistor intended for common emitter
class-AB operation. The transistor has internal input and
output matching by means of MOS capacitors.
The encapsulation is a SOT273A flange envelope with a
ceramic cap. All leads are isolated from the flange.
1
3
5
Top view
MBK131
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
CW, class-AB
960
26
40
≥9
≥55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Oct 30
2
Philips Semiconductors
Product specification
UHF power transistor
BLV946
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
70
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
−
−
−
−
−
−
V
open base
30
3
V
open collector
V
collector current (DC)
6
A
IC(AV)
Ptot
average collector current
total power dissipation
storage temperature range
operating junction temperature
6
A
up to Tmb = 25 °C
90
+150
+200
W
°C
°C
Tstg
Tj
−65
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to Ptot = 90 W; Tmb = 25 °C
1.94
K/W
mounting base
Rth mb-h
thermal resistance from mounting
base to heatsink
0.3
K/W
MLD231
MLD232
10
120
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
C
(A)
(2)
(1)
80
(1)
(2)
40
1
1
0
2
10
10
0
40
80
120
160
V
(V)
o
CE
T ( C)
h
(1) Tmb = 25 °C.
(2) Th = 70 °C.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 30
3
Philips Semiconductors
Product specification
UHF power transistor
BLV946
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
70
TYP.
MAX.
UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
collector-base breakdown voltage
open emitter; IC = 30 mA
−
−
−
−
−
−
V
collector-emitter breakdown voltage open base; IC = 60 mA
30
3
−
V
emitter-base breakdown voltage
collector leakage current
DC current gain
open collector; IE = 1.2 mA
VBE = 0; VCE = 28 V
−
V
−
3
mA
hFE
VCE = 10 V; IC = 2 A; note 1 30
120
−
Cc
collector capacitance
VCB = 26 V; IE = ie = 0;
f = 1 MHz; note 2
−
33
pF
Notes
1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01.
2. CC value is that of the die only; it is not measurable because of internal matching network.
MLD233
100
handbook, halfpage
h
FE
80
(1)
60
(2)
40
20
0
0
1
2
3
4
5
6
I
(A)
C
Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01.
(1) VCE = 26 V.
(2)
VCE = 10 V.
Fig.4 DC current gain as a function of collector
current; typical values.
1997 Oct 30
4
Philips Semiconductors
Product specification
UHF power transistor
BLV946
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.3 K/W.
f
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
CW, class-AB
960
26
130
40
≥9
≥55
typ. 11
typ. 60
Ruggedness in class-AB operation
The BLV946 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated
output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 130 mA; Th = 25 °C; Rth mb-h = 0.3 K/W.
MLD234
MLD235
16
80
60
handbook, halfpage
handbook, halfpage
G
p
η
(%)
P
L
(W)
(dB)
60
12
G
40
p
40
20
0
8
4
η
20
0
0
0
0
20
40
60
2
4
6
8
10
P (W)
P
(W)
i
L
VCE = 26 V.
VCE = 26 V.
ICQ = 130 mA.
f = 960 MHz.
ICQ = 130 mA.
f = 960 MHz.
Fig.5 Power gain and efficiency as functions of
load power; typical values.
Fig.6 Load power as a function of input power;
typical values.
1997 Oct 30
5
Philips Semiconductors
Product specification
UHF power transistor
BLV946
L6
L7
C7
C9
C12
V
V
bias
CC
R1
R2
C13 C14
C15
C5
C6
C4
C8
C10
C11
L5
L8
L9
DUT
L4
L10
C3
C16
L11
L1
L2
L12
input
output
50 Ω
50 Ω
C1
C2
C17
C18
MLD236
L3
Fig.7 Class-AB test circuit at 960 MHz.
List of components
COMPONENT
DESCRIPTION
VALUE
12 pF
DIMENSIONS
CATALOGUE No.
C1, C2, C17, C18
TEKELEC variable
capacitor type 6451
C3, C16
C4, C13
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
electrolytic capacitor
10 µF, 63 V
2222 030 28109
2222 581 76641
C5, C8, C10, C13,
C15
multilayer ceramic chip
capacitor; note 1
20 pF, 500 V
C6
multilayer ceramic chip
capacitor
100 nF, 50 V
100 pF, 500 V
470 pF, 50 V
10 nF, 50 V
22 nF, 50 V
50 Ω
C7, C11
C9
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor
2222 731 18471
2222 731 18103
2222 731 18223
C12
multilayer ceramic chip
capacitor
C14
multilayer ceramic chip
capacitor
L1
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 36 mm
width 2.2 mm
L2
50 Ω
length 8 mm
width 2.2 mm
L3, L9
L4, L10
8 Ω
length 10 mm
width 20 mm
37 Ω
length 4.5 mm
width 3.5 mm
1997 Oct 30
6
Philips Semiconductors
Product specification
UHF power transistor
BLV946
COMPONENT
DESCRIPTION
VALUE
2.2 µH
DIMENSIONS
CATALOGUE No.
L5
microchoke
4322 057 02281
4312 020 36642
L6, L7
Ferroxcube wide band
HF choke, grade 3B
L8
4.5 turns enamelled 1 mm
copper wire
50 nH
internal dia. 4 mm
close wound
L11
stripline; note 2
stripline; note 2
metal film resistor
50 Ω
length 7 mm
width 2.2 mm
L12
50 Ω
length 37 mm
width 2.2 mm
R1, R2
100 Ω; 0.4 W
2322 171 11001
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr = 2.2);
thickness 1⁄32"; thickness of the copper sheet 2 × 35 µm.
1997 Oct 30
7
Philips Semiconductors
Product specification
UHF power transistor
BLV946
70
70
70
70
KV9004
KV9005
C13
C14
C10
C6
C12
C15
V
C5
V
C4
C8
C7
L5
bias
C9
L8
CC
C11
L3
L7
R2
L6
L9
R1
L1
L2
L11
L12
L4
L10
C16
C3
C2
C17
C18
C1
MLD237
Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Component layout and printed circuit board for 960 MHz class-AB test circuit.
1997 Oct 30
8
Philips Semiconductors
Product specification
UHF power transistor
BLV946
MLD239
MLD238
10
10
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
Z
i
(Ω)
x
i
i
5
5
0
5
R
X
L
L
r
0
5
10
840
10
840
880
920
960
1000
f (MHz)
880
920
960
1000
f (MHz)
VCE = 26 V; ICQ = 130 mA; PL = 40 W;
VCE = 26 V; ICQ = 130 mA; PL = 40 W;
Th = 25 °C; Rth mb-h = 0.3 K/W.
Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Fig.10 Load impedance as a function of frequency
(series components); typical values.
MLD240
14
handbook, halfpage
G
p
(dB)
12
handbook, halfpage
10
8
Z
i
Z
MBA451
L
6
820
880
940
1000
1060
f (MHz)
VCE = 26 V; ICQ = 130 mA; PL = 40 W;
Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.11 Power gain as a function of frequency;
typical values.
Fig.12 Definition of transistor impedance.
1997 Oct 30
9
Philips Semiconductors
Product specification
UHF power transistor
BLV946
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT273A
D
A
F
B
U
1
q
C
w
M
H
1
C
2
b
1
c
5
3
1
H
E
U
2
6
4
2
A
w
p
M
A
B
1
Q
w
b
M
3
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
E
e
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
2
1
2
2.42
1.80
3.18
2.92
7.45
7.27
10.93 10.29
10.66 10.03
3.05 15.75 10.93 3.31
2.54 14.73 10.66 3.04
4.35
4.03
24.90 10.29
24.63 10.03
0.16
0.10
18.42
0.51
0.02
1.02 0.25
0.04 0.01
mm
4.35
0.095 0.125
0.071 0.115
0.286
0.254
0.430 0.405
0.420 0.395
0.120 0.62
0.100 0.58
0.130 0.171
0.120 0.159
0.405
0.395
0.006
0.004
0.43
0.42
0.98
0.97
0.725
inches
0.171
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT273A
97-06-28
1997 Oct 30
10
Philips Semiconductors
Product specification
UHF power transistor
BLV946
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 30
11
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© Philips Electronics N.V. 1997
SCA55
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127067/00/03/pp12
Date of release: 1997 Oct 30
Document order number: 9397 750 02986
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