BLV950 [NXP]
UHF push-pull power transistor; 超高频推挽功率晶体管
| 型号： | BLV950 |
| 厂家： | 
NXP |
| 描述： | UHF push-pull power transistor |
| 文件： | 总16页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV950
UHF push-pull power transistor
1997 Oct 27
Product specification
Supersedes data of 1996 Jan 26
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
FEATURES
PINNING - SOT262A2
• Internal input and output matching for easy matching,
high gain and efficiency
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
collector 2
base 1
• Gold metallization ensures excellent reliability.
base 2
common emitter; connected
to flange
APPLICATIONS
• Base station transmitters in the 800 to 960 MHz range.
DESCRIPTION
c1
handbook, halfpage
1
2
Two NPN silicon planar epitaxial transistors in push-pull
configuration, intended for linear common emitter
class-AB operation. The transistors are encapsulated in a
4-lead SOT262A2 flange package with 2 ceramic caps.
The flange provides the common emitter connection for
both transistors.
b1
e
b2
5
5
3
4
Top view
c2
MAM031
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
d3
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB
900
960
900
960
26
26
26
26
150
≥8
≥7.5
≥8.5
≥8
≥45
≥45
≥35
≥35
−
150
−
2-tone, class-AB
150 (PEP)
150 (PEP)
≤−30
≤−30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Oct 27
2
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
−
−
−
−
−
−
70
V
open base
30
V
open collector
3
V
collector current (DC)
12
A
IC(AV)
Ptot
average collector current
total power dissipation (DC)
storage temperature
12
A
Tmb = 25 °C
340
+150
200
W
°C
°C
Tstg
Tj
−65
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to Ptot = 340 W; Tmb = 25 °C; note 1
0.52
K/W
mounting base
Rth mb-h
thermal resistance from mounting
base to heatsink
0.15
K/W
Note
1. Total device; both sections equally loaded; thermal resistance is determined under specified RF operating
conditions.
1997 Oct 27
3
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
collector-base breakdown voltage
open emitter; IC = 60 mA
70
−
−
−
−
−
−
V
collector-emitter breakdown voltage open base; IC = 150 mA
30
3
−
V
emitter-base breakdown voltage
collector leakage current
DC current gain
open collector; IE = 3 mA
VBE = 0; VCE = 28 V
−
V
−
5
mA
hFE
VCE = 10 V; IC = 4.5 A; note 1 30
120
−
Cc
collector capacitance
VCB = 26 V; IE = ie = 0;
f = 1 MHz; note 2
−
75
pF
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.01.
2. Value Cc is that of the die only, it is not measurable because of internal matching network.
MLD256
MLD257
80
300
handbook, halfpage
handbook, halfpage
h
C
c
FE
(pF)
(1)
(2)
60
40
20
200
100
0
0
0
0
4
8
12
16
10
20
30
40
50
(V)
CB
V
I
(A)
C
Measured under pulsed conditions; tp ≤ 300 µs; δ ≤ 0.01.
Value Cc is that of the die only, it is not measurable because of
internal matching network.
(1) VCE = 26 V.
IE = ie = 0; f = 1 MHz.
(2)
VCE = 10 V.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
1997 Oct 27
4
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.15 K/W.
f
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
d3
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB
900
26
26
26
26
2 × 100
2 × 100
2 × 100
2 × 100
150
≥8
typ. 9
≥45
typ. 50
−
960
150
≥7.5
typ. 8.5
≥45
typ. 50
−
2-tone, class-AB
note 1
note 2
150 (PEP)
150 (PEP)
≥8.5
typ. 9.5
≥35
typ. 40
≤−28
typ. −31
≥8
≥35
≤−30
typ. 9
typ. 40
typ. −33
Notes
1. f1 = 900.0 MHz; f2 = 900.1 MHz.
2. f1 = 960.0 MHz; f2 = 960.1 MHz.
Ruggedness in class-AB operation
The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the
conditions: PL = 150 W; f = 960 MHz; VCE = 26 V; ICQ = 2 × 100 mA; Th = 25 °C; Rth mb-h = 0.15 K/W and also a load
mismatch of VSWR = 5 : 1 through all phases at PL = 150 W (PEP) and f1 = 960.0 MHz and f2 = 960.1 MHz.
MLD258
MLD259
12
60
200
handbook, halfpage
handbook, halfpage
P
L
(W)
G
p
η
(%)
C
(dB)
G
p
150
40
8
η
C
100
50
20
4
0
200
0
0
0
0
50
100
150
10
20
30
P (W)
P
(W)
i
L
VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz.
VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz.
Fig.4 Power gain and efficiency as functions of
load power; typical values.
Fig.5 Load power as a function of input power;
typical values.
1997 Oct 27
5
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
MLD260
MLD261
12
60
200
handbook, halfpage
handbook, halfpage
P
L
η
G
p
(PEP)
(W)
C
(%)
(dB)
150
100
50
G
p
40
8
η
C
20
4
0
0
200
(PEP) (W)
0
0
0
50
100
150
P
10
20
30
P (PEP) (W)
i
L
VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz.
VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz.
Fig.6 Power gain and efficiency as functions of
load power; typical values.
Fig.7 Load power as a function of input power;
typical values.
MLD262
25
handbook, halfpage
d
im
(dBc)
30
d
d
3
5
35
40
45
d
7
0
50
100
150
P
200
(PEP) (W)
L
VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz.
Fig.8 Intermodulation distortion as a function of
load power; typical values.
1997 Oct 27
6
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
C3
C5
C7
C9
L8
L14
R3
C31
C2
C32
C35
V
V
S
bias
R5
C30
C29
C1
R1
C8
L9
C4
C6
C33
C34
L15
L10
L6
L16
L20
L22
L24 L26
L28
L29
L4
DUT
L1
L2
C19
C27
output
50 Ω
input
50 Ω
C21
C22
C23
C24
C25
C26
L30
L3
C20
C28
L5
L25 L27
L7
L21
L23
L11
L17
L18
C36
C37
L12
C10
C13
C15
C38
C17
R4
R2
C41
C42
C39
R6
V
V
S
bias
C11
C40
L13
L19
C12
C14
C16
C18
MLD263
Fig.9 Class-AB test circuit at 900 to 960 MHz.
7
1997 Oct 27
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
List of components (see Figs 9 and 10)
COMPONENT
C1, C10
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
tantalum capacitor
2.2 µF, 35 V
2022 019 00058
C2, C11, C30, C34,
C37, C41
multilayer ceramic chip
capacitor; note 1
300 pF, 200 V
C3, C12
electrolytic capacitor
electrolytic capacitor
tantalum capacitor
1 µF, 63 V
10 µF, 16 V
1 µF, 35 V
100 nF, 50 V
2222 085 78108
2222 085 75109
2022 019 00056
2222 581 76641
C4, C13
C5, C14, C31, C40
C6, C15, C29, C42
multilayer ceramic chip
capacitor
C7, C16
C8, C17
multilayer ceramic chip
capacitor
10 nF, 50 V
330 pF, 200 V
39 pF, 500 V
2 pF, 500 V
3.9 pF, 500 V
2222 581 76627
multilayer ceramic chip
capacitor; note 1
C9, C18, C19, C20,
C35, C36
multilayer ceramic chip
capacitor; note 1
C23
multilayer ceramic chip
capacitor; note 1
C25
multilayer ceramic chip
capacitor; note 1
C21, C22
C24, C26
C27, C28
film dielectric trimmer
film dielectric trimmer
9 pF
2222 809 09005
2222 809 05215
3.5 pF
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
C32, C39
C33, C38
L1, L3
electrolytic capacitor
electrolytic capacitor
stripline; note 2
10 µF, 63 V
1 µF, 63 V
35 Ω
2222 030 28109
2222 030 38108
length 50.7 mm
width 4 mm
L2
semi-rigid cable; note 3
50 Ω
ext. conductor
length 50.7 mm
ext. diameter 2.2 mm
L4, L5
stripline; note 2
stripline; note 2
stripline; note 2
35 Ω
20 Ω
7 Ω
length 26.5 mm
width 4 mm
L6, L7
length 9.2 mm
width 8 mm
L10, L11, L16, L17
L8, L13, L14, L19
length 2.5 mm
width 27 mm
grade 4S2 Ferroxcube
chip-bead
4330 030 36300
4322 057 04781
L9, L12
microchoke
4.7 µH
L15, L18
4 turns enamelled 1 mm
copper wire
100 nH
int. diameter 6 mm
close wound
L20, L21
stripline; note 2
14 Ω
length 6 mm
width 12.5 mm
1997 Oct 27
8
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
COMPONENT
L22, L23
DESCRIPTION
stripline; note 2
VALUE
DIMENSIONS
length 7 mm
CATALOGUE No.
14 Ω
18 Ω
50 Ω
30 Ω
50 Ω
width 12.5 mm
L24, L25
L26, L27
L28, L30
L29
stripline; note 2
length 11 mm
width 9 mm
stripline; note 2
length 6.5 mm
width 2.5 mm
stripline; note 2
length 49.3 mm
width 5 mm
semi-rigid cable; note 3
ext. conductor
length 49.3 mm
ext. diameter 3.6 mm
R5, R6
R1, R2
R3, R4
metal film resistor
metal film resistor
metal resistor
0.4 W, 1 Ω
2322 151 71008
2322 151 75118
2322 153 75118
0.4 W, 5.11 Ω
1 W, 5.11 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr = 2.2);
thickness 1⁄32"; thickness of the copper sheet 2 × 35 µm.
3. Semi-rigid cables soldered respectively on striplines L1 and L28.
1997 Oct 27
9
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
64.5
68.5
85
85
C3 C5 C7
C2
C33 C32
L14
C35
L15
C9
L9
C29
C1
R5
R1
C31
V
V
S
L28
bias
C8
C6
C34
C30
C4
L8
R3
L16
L10
L3
L29
L20 L22
L24
L6
L4
C27
L26
C19
C25
C23
C21
L5
C26
C24
C22
L7
L27
C28
C20
L25
L11
L23
C37
L21
L17
L30
L1
L2
L19
L13
R2
R6
C13
C15 L12
C17
C41
V
V
S
L18
C36
bias
R4
C18
C10
C40
C42
C16
C38
C11
C39
C12 C14
MLD264
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Component layout and printed-circuit board for 900 to 960 MHz class-AB test circuit.
1997 Oct 27
10
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
MLD266 - 1
MLD265 - 1
4
8
handbook, halfpage
handbook, halfpage
Z
i
Z
L
(Ω)
r
(Ω)
i
i
R
L
6
2
4
2
0
x
X
L
−2
0
−4
840
−2
840
880
920
960
1000
f (MHz)
880
920
960
1000
f (MHz)
VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device);
Th = 25 °C; Rth mb-h = 0.15 K/W.
VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device);
Th = 25 °C; Rth mb-h = 0.15 K/W.
Fig.11 Input impedance as a function of frequency
(series components); typical values per
section.
Fig.12 Load impedance as a function of frequency
(series components); typical values per
section.
MLD267
12
handbook, halfpage
G
p
(dB)
8
handbook, halfpage
4
0
Z
i
Z
MBA451
L
840
880
920
960
1000
f (MHz)
VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device);
Th = 25 °C; Rth mb-h = 0.15 K/W.
Fig.13 Power gain as a function of frequency;
typical values.
Fig.14 Definition of transistor impedance.
1997 Oct 27
11
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A2
D
A
F
B
U
1
q
C
C
w
2
H
M
c
1
1
2
E
E
H
p
U
1
2
5
w
M
A
B
1
A
3
4
w
3
b
M
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
e
E
E
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
mm
1
1
1
2
1
2
5.85
5.58
5.39
4.62
21.98
21.71
10.27 10.29 1.78 20.58 17.02 3.28
10.05 10.03 1.52 20.06 16.51 3.02
2,47
2.20
34.17 9.91
33.90 9.65
0.16
0.10
27.94
1.100
0.51
0.02
1.02 0.25
0.04 0.01
11.05
0.435
0.230
0.220
0.212
0.182
0.865
0.855
0.404 0.405 0.070 0.81
0.395 0.396 0.060 0.79
0.129 0.097
0.119 0.087
0.390
0.380
0.006
0.004
0.67
0.65
1.345
1.335
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT262A2
97-06-28
1997 Oct 27
12
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 27
13
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
NOTES
1997 Oct 27
14
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
NOTES
1997 Oct 27
15
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Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/03/pp16
Date of release: 1997 Oct 27
Document order number: 9397 750 02842
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