BLV958 [NXP]
UHF power transistors; 超高频功率晶体管
| 型号： | BLV958 |
| 厂家： | 
NXP |
| 描述： | UHF power transistors |
| 文件： | 总12页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV958; BLV958FL
UHF power transistors
Product specification
2000 Jan 12
Supersedes data of 1997 Oct 15
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
FEATURES
DESCRIPTION
• Internal input and output matching for easy matching,
high gain and efficiency
NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internal input and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base stations in the 800 to 960 MHz frequency range.
PINNING - SOT391A
PINNING - SOT391B
PIN
1
SYMBOL
DESCRIPTION
collector
PIN
SYMBOL
DESCRIPTION
collector
c
b
e
1
c
b
e
2
base
2
base
3
emitter; connected to flange
Ground plane
emitter
c
c
1
2
1
handbook, halfpage
handbook, halfpage
b
b
3
2
e
e
MAM203
MSA465
Top view
Top view
Fig.1 Simplified outline (SOT391A) and symbol.
Fig.2 Simplified outline (SOT391B) and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
(MHz)
900
960
26
26
75
75
≥8
≥50
≥50
CW, class-AB
≥8.5
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Jan 12
2
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
70
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
collector-emitter voltage
emitter-base voltage
open base
30
V
open collector
3
V
collector current (DC)
average collector current
total power dissipation
storage temperature
15
A
IC(AV)
Ptot
15
A
Tmb ≤ 25 °C
250
+150
200
W
°C
°C
Tstg
Tj
−65
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to
mounting base
Ptot = 250 W; Tmb = 25 °C;
note 1
0.7
K/W
Rth mb-h
thermal resistance from mounting base
to heatsink
0.2
K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
2000 Jan 12
3
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
CONDITIONS
open emitter; IC = 60 mA
open base; IC = 150 mA
open collector; IE = 3 mA
VBE = 0; VCE = 28 V
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
70
30
3
−
−
−
−
−
−
V
−
V
−
V
−
5
mA
hFE
DC current gain
VCE = 10 V; IC = 4.5 A; note 1;
see Fig 3
30
120
Cc
collector capacitance
VCB = 26 V; IE = ie = 0;
−
75
−
pF
f = 1 MHz; note 2; see Fig 4
Notes
1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01.
2. Value of Cc is that of the die only, it is not measurable because of internal matching network.
MLD243
MLD244
120
200
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
(1)
(2)
150
80
40
100
50
0
0
0
0
4
8
12
16
10
20
30
40
V
(V)
I
(A)
CB
C
Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01.
(1) VCE = 26 V.
Value Cc is that of the die only, it is not measurable because of
internal matching network.
(2) VCE = 10 V.
IE = ie = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
2000 Jan 12
4
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.2 K/W.
f
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
900
26
200
75
≥8
≥50
typ. 9.5
typ. 55
CW, class-AB
960
26
200
75
≥8.5
≥50
typ. 9.5
typ. 55
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 4 : 1 through all phases at rated
output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 200 mA; Th = 25 °C; Rth mb-h = 0.2 K/W.
MLD245
MLD246
60
12
120
handbook, halfpage
handbook, halfpage
G
p
G
p
(dB)
η
P
L
(W)
C
(%)
40
80
8
η
C
20
40
4
0
100
(W)
0
0
0
0
4
8
12
16
20
40
60
80
P
P (W)
i
L
VCE = 26 V; ICQ = 200 mA; f = 960 MHz.
VCE = 26 V; ICQ = 200 mA; f = 960 MHz.
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
Fig.6 Load power as a function of input power;
typical values.
2000 Jan 12
5
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
L5
L8
C9
C10
+V
+V
bias
S
R1
R2
C13 C14 C15
C4
C5
C6
C16
C7
C8
C11 C12
L6
L7
L3
L4
L9
L10
DUT
C2
C19
L1
L2
L11
L12
input
output
50 Ω
50 Ω
C1
C20
MBH109
C18
C21
C3
C17
Fig.7 Class-AB test circuit at f = 960 MHz.
List of components (see Figs 7 and 8)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C20
C2, C19
Tekelec, type 5201
0.8 to 10 pF
15 pF; 500 V
multilayer ceramic chip
capacitor; note 1
C3
multilayer ceramic chip
capacitor; note 1
6.2 pF; 500 V
C4
C5
electrolytic capacitor
10 µF; 63 V
multilayer ceramic chip
capacitor
22 nF; 50 V
C6
multilayer ceramic chip
capacitor; note 1
1 nF; 500 V
C7
multilayer ceramic chip
capacitor; note 1
33 pF; 500 V
100 pF; 500 V
20 pF; 500 V
2222 030 28109
C8, C11, C14
C9, C10, C13
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
C12
C15
solid tantalum capacitor
1 µF; 35 V
multilayer ceramic chip
capacitor
100 nF; 50 V
C16
electrolytic capacitor
47 µF; 40 V
2222 036 68479
2000 Jan 12
6
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
COMPONENT
C17
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip
capacitor; note 1
4.7 pF; 500 V
C18
C21
L1
multilayer ceramic chip
capacitor; note 1
3.3 pF; 500 V
2.7 pF; 500 V
multilayer ceramic chip
capacitor; note 1
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 51 mm
width 2.2 mm
L2
length 7 mm
width 2.2 mm
L3
length 5.5 mm
width 20 mm
L4
length 9 mm
width 20 mm
L5, L8
L6
Ferroxcube chip-bead
grade 4S2
4330 030 36300
5 turns enamelled 1 mm
copper wire
int. diameter 4 mm
close wound
L7
4 turns enamelled 1 mm
copper wire
int. diameter 4 mm
close wound
L9
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
metal film resistor
length 12.5 mm
width 20 mm
L10
L11
L12
length 2 mm
width 20 mm
length 17 mm
width 2.2 mm
length 41 mm
width 2.2 mm
R1, R2
100 Ω; 0.4 W
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on double-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2.25); thickness 1⁄32 inch.
2000 Jan 12
7
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
75
75
70
70
C5
C12
C15
C13
R2
C7
R1
C4
+V
C16
C8
C9
L6
C10
C11
C6
C14
L3
L4
L9 L10 L7
bias
L1
+V
S
L5
L8
L11
L12
L2
C19
C18
C2
C20
C17
C3
C1
C21
MBH110
The same printed-circuit board can also be used for the flangeless version FL.
Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Component layout and printed-circuit board for 960 MHz class-AB test circuit.
2000 Jan 12
8
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
MLD249
MLD252
5
6
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
4
4
R
L
2
0
2
4
x
i
3
2
X
L
r
i
1
0
6
800
800
850
900
950
1000
1050
850
900
950
1000
1050
f (MHz)
f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 75 W;
VCE = 26 V; ICQ = 200 mA; PL = 75 W;
Th = 25 °C; Rth mb-h = 0.2 K/W.
Th = 25 °C; Rth mb-h = 0.2 K/W.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Fig.10 Load impedance as a function of frequency
(series components); typical values.
MLD253
12
handbook, halfpage
G
p
(dB)
8
handbook, halfpage
Z
i
4
0
Z
MBA451
L
800
850
900
950
1000
1050
f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 75 W;
Th = 25 °C; Rth mb-h = 0.2 K/W.
Fig.11 Power gain as a function of frequency;
typical values.
Fig.12 Definition of transistor impedance.
2000 Jan 12
9
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
PACKAGE OUTLINES
Flanged ceramic package; 2 mounting holes; 2 leads
SOT391A
D
A
F
3
D
1
U
1
B
q
c
C
1
H
p
U
E
E
2
1
A
2
w
M
M
M
B
A
1
w
b
M
M
C
2
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
1
1
1
2
1
5.21
4.45
3.43 2.29
3.18 2.03
22.99 9.91
22.73 9.65
5.84 0.15 10.87 10.92 10.26 10.29 1.65 15.75
5.59 0.10 10.67 10.67 10.06 10.03 1.40 14.73
20.32
0.800
0.25 0.51
0.010 0.020
0.205
0.175
0.135 0.090
0.125 0.080
0.905 0.390
0.895 0.380
0.230 0.006 0.428 0.430 0.404 0.405 0.065 0.620
0.220 0.004 0.420 0.420 0.396 0.395 0.055 0.580
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-05-29
99-12-08
SOT391A
2000 Jan 12
10
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
Flangeless ceramic package; 2 leads
SOT391B
D
A
c
1
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived
from the original inch dimensions)
E
UNIT
A
b
c
D
E
L
Q
4.09
3.02
5.85 0.16 11.54 10.93 2.79 1.02
mm
L
5.58 0.10 10.51 9.90
2.29 0.76
2
b
Q
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT391B
97-05-29
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Jan 12
11
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Printed in The Netherlands
125002/04/pp12
Date of release: 2000 Jan 12
Document order number: 9397 750 06671
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