BSN20TRL13 [NXP]
100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET;
| 型号： | BSN20TRL13 |
| 厂家： | 
NXP |
| 描述： | 100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSN20
N-channel enhancement mode
vertical D-MOS transistor
1997 Jun 18
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
FEATURES
PINNING - SOT23
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
PIN
SYMBOL
DESCRIPTION
1
2
3
g
s
d
gate
• No secondary breakdown.
source
drain
APPLICATIONS
• Thin and thick film circuits
3
handbook, halfpage
• General purpose fast switching applications.
d
s
DESCRIPTION
g
N-channel enhancement mode vertical D-MOS transistor
in a SOT23 SMD package.
1
2
CAUTION
Top view
MAM273
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
Marking code: M8p.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
CONDITIONS
MAX.
50
UNIT
drain-source voltage (DC)
drain current (DC)
V
ID
100
15
mA
Ω
RDSon
VGSth
drain-source on-state resistance
gate-source threshold voltage
ID = 100 mA; VGS = 10 V
ID = 1 mA; VGS = VDS
1.8
V
1997 Jun 18
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
ID
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
CONDITIONS
MIN.
MAX.
50
UNIT
−
−
−
−
−
−
V
V
open drain
±20
100
300
300
250
+150
150
mA
mA
mW
mW
°C
IDM
Ptot
peak drain current
total power dissipation
up to Tamb = 25 °C; note 1
up to Tamb = 25 °C; note 2
Tstg
Tj
storage temperature
junction temperature
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
note 2
CONDITIONS
VALUE
UNIT
K/W
K/W
Rth j-a
430
500
Notes to the Limiting values and Thermal characteristics
1. Device mounted on a ceramic substrate, 10 × 8 × 0.7 mm.
2. Device mounted on a printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage VGS = 0; ID = 10 µA
−
−
V
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
VDS = VGS; ID = 1 mA
VGS = 0; VDS = 40 V
VDS = 0; VGS = ±20 V
0.4
−
−
1.8
1
V
−
µA
IGSS
−
−
±100 nA
RDSon
drain-source on-state resistance VGS = 10 V; ID = 100 mA
VGS = 5 V; ID = 100 mA
−
8
15
20
30
−
Ω
−
14
18
80
8
Ω
VGS = 2.5 V; ID = 10 mA
−
Ω
yfs
Ciss
Coss
Crss
forward transfer admittance
input capacitance
VDS = 10 V; ID = 100 mA
40
−
mS
pF
pF
pF
VGS = 0; VDS = 10 V; f = 1 MHz
VGS = 0; VDS = 10 V; f = 1 MHz
VGS = 0; VDS = 10 V; f = 1 MHz
15
15
5
output capacitance
−
7
reverse transfer capacitance
−
2
Switching times
ton turn-on time
VGS = 0 to 10 V; VDD = 20 V;
ID = 100 mA
−
−
2
5
5
ns
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 20 V;
ID = 100 mA
10
1997 Jun 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
MBB755
MRA781
0.4
30
handbook, halfpage
handbook, halfpage
C
(pF)
P
tot
(W)
(1)
20
(2)
0.2
10
(1)
(2)
(3)
0
0
0
5
10
15
20
V
25
(V)
0
50
100
150
T
200
o
( C)
DS
amb
VGS = 0; Tj = 25 °C; f = 1 MHz.
(1) Cis.
(2) Cos
.
(3) Crs.
(1) Mounted on a ceramic substrate.
(2) Mounted on a printed-circuit board.
Fig.3 Capacitance as a function of drain source
voltage; typical values.
Fig.2 Power derating curves.
MRA782
MRA783
handbook, halfpage
500
handbook, halfpage
V
= 10 V
7 V
GS
500
I
I
D
D
(mA)
(mA)
400
400
5 V
4 V
300
200
100
0
300
200
100
3 V
2.5 V
0
0
0
2
4
6
8
10
(V)
4
8
12
V
(V)
DS
V
GS
VDS = 10 V; Tj = 25 °C.
Tj = 25 °C.
Fig.4 Typical output characteristics.
Fig.5 Typical transfer characteristics.
1997 Jun 18
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
MDA162
MDA163
24
80
handbook, halfpage
handbook, halfpage
R
DSon
(Ω)
R
DSon
(Ω)
(1)
(2)
60
16
40
20
(3)
8
0
0
0
2
3
1
10
10
10
2
4
6
8
10
(V)
I
(mA)
D
V
GS
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 5 V.
VDS = 0.1 V; Tj = 25 °C.
(3)
VGS = 10 V.
Fig.7 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
Fig.6 Drain-source on-state resistance as a
function of drain current; typical values.
MRA785
MRA784
2
1.2
handbook, halfpage
handbook, halfpage
k
k
(2)
1.1
1
1.6
(1)
1.2
0.9
0.8
0.8
0.4
0.7
−50
0
50
100
150
−50
0
50
100
150
o
o
T ( C)
T ( C)
j
j
RDSon at Tj
VGSth at Tj
--------------------------------------
VGSth at 25°C
k =
-----------------------------------------
RDSon at 25 °C
k =
(1) ID = 10 mA; VGS = 2.5 V.
(2) ID = 100 mA; VGS = 10 V.
Typical VGSth at 1 mA.
Fig.8 Temperature coefficient of gate-source
threshold voltage.
Fig.9 Temperature coefficient of drain-source
on-state resistance.
1997 Jun 18
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Jun 18
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 18
7
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
137107/00/02/pp8
Date of release: 1997 Jun 18
Document order number: 9397 750 02308
相关型号：
BSN254AMO
TRANSISTOR 300 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal
NXP
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