BT258S-800LT [NXP]
SCR logic level, high temperature; 可控硅逻辑电平，高温度
| 型号： | BT258S-800LT |
| 厂家： | 
NXP |
| 描述： | SCR logic level, high temperature |
| 文件： | 总12页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT258S-800LT
SCR logic level, high temperature
Rev. 01 — 2 September 2008
Product data sheet
1. Product profile
1.1 General description
Passivated sensitive gate Silicon-Controlled Rectifier in a SOT428 surface-mounted
plastic package
1.2 Features
I Very sensitive gate
I Direct interfacing to logic level ICs
I High operating temperature
I Direct interfacing to low-power gate
drive circuits
1.3 Applications
I General purpose switching and phase I Ignition circuits
control
I Protection circuits for Switched-Mode
I Protection circuits in lighting ballasts
Power Supplies (SMPS)
1.4 Quick reference data
I VDRM ≤ 800 V
I IGT ≤ 50 µA
I IT(AV) ≤ 5 A
I IT(RMS) ≤ 8 A
I VRRM ≤ 800 V
I ITSM ≤ 75 A (t = 10 ms)
I Tj(max) = 150 °C
2. Pinning information
Table 1.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
cathode (K)
mb
A
K
2
anode (A)
G
3
gate (G)
sym037
mb
mounting base; connected to anode (A)
2
1
3
SOT428 (DPAK)
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BT258S-800LT
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead SOT428
cropped)
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
800
800
5
Unit
V
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
-
-
VRRM
V
IT(AV)
half sine wave; Tmb ≤ 135 °C; see
A
Figure 1
IT(RMS)
ITSM
RMS on-state current
all conduction angles; see Figure 4
and 5
-
8
A
non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
t = 8.3 ms
-
-
-
75
82
28
50
A
A
A2s
I2t
I2t for fusing
tp = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 10 A; IG = 50 mA;
A/µs
dIG/dt = 50 mA/µs
IGM
peak gate current
peak gate power
-
2
A
PGM
PG(AV)
Tstg
Tj
-
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
+150
150
−40
[1]
-
[1] Operation above Tj = 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less.
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
2 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
003aac292
10
Ptot
(W)
8
a = 1.57
1.9
2.2
6
4
2
0
2.8
4
conduction form
angle
(degrees)
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
0
1
2
3
4
5
6
IT(AV) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of average on-state current; maximum values
003aac293
100
ITSM
(A)
80
60
40
I
I
T
TSM
20
t
= 25 °C max
t
p
T
j(init)
0
1
10
102
103
number of cycles
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
3 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
003aac295
103
I
I
T
ITSM
(A)
TSM
t
t
p
T
= 25 °C max
j(init)
(1)
102
10
10-5
10-4
10-3
10-2
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aac294
003aac291
25
20
15
10
5
10
IT(RMS)
(A)
IT(RMS)
(A)
8
6
4
2
0
0
10-2
10-1
1
10
-50
0
50
100
150
mb (°C)
T
surge duration (s)
f = 50 Hz
Tmb = 135 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of
mounting base temperature; maximum values
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
4 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
5. Thermal characteristics
Table 4.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see Figure 6
-
-
2
K/W
[1]
Rth(j-a)
thermal resistance from junction to
ambient
in free air
-
75
-
K/W
[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint; see Figure 14.
003aac301
10
Z
th(j-mb)
(K/W)
1
−1
10
t
p
P
δ =
T
−2
10
t
t
p
T
−3
10
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
5 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
IGT
IL
gate trigger current
VD = 12 V; IT = 0.1 A; see Figure 8
VD = 12 V; IG = 0.1 A; see Figure 10
VD = 12 V; IG = 0.1 A; see Figure 11
IT = 16 A; see Figure 9
20
-
-
50
10
6
µA
mA
mA
V
latching current
holding current
on-state voltage
gate trigger voltage
0.4
0.3
1.3
IH
-
VT
VGT
-
1.6
IT = 0.1 A; see Figure 7
VD = 12 V
-
0.4
0.2
0.5
0.5
1.5
-
V
VD = VDRM; Tj = 110 °C
0.1
V
ID
IR
off-state current
reverse current
VD = VDRM(max); Tj = 150 °C
VR = VRRM(max); Tj = 150 °C
-
-
2.5
2.5
mA
mA
Dynamic characteristics
dVD/dt
rate of rise of
off-state voltage
VDM = 0.67 × VDRM(max); Tj = 150 °C; exponential
waveform; RGK = 100 Ω
35
-
70
2
-
-
V/µs
µs
tgt
gate-controlled
turn-on time
ITM = 10 A; VD = VDRM(max); IG = 5 mA;
dIG/dt = 0.2 A/µs
003aac296
003aac297
1.6
3
V
GT
I
GT
V
GT(25°C)
I
GT(25°C)
1.2
2
0.8
0.4
0
1
0
−50
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
Fig 8. Normalized gate trigger current as a function
of junction temperature
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
6 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
003aac290
003aac298
3
25
IT
I
L
(A)
I
L(25°C)
20
15
10
2
(1)
(2)
(3)
1
5
0
0
−50
0
1
2
3
0
50
100
150
V
T (V)
T (°C)
j
Vo = 1.0 V
Rs = 0.04 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
003aac299
003aac300
3
3
10
I
H
dV /dt
D
(V/µs)
I
H(25°C)
(1)
2
2
10
1
10
0
−50
1
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
(1) RGK = 100 Ω
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical
values
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
7 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
b
2
E
1
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 13. Package outline SOT428 (DPAK)
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
8 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
8. Mounting
7.0
7.0
1.5
2.15
2.5
4.57
001aab021
Plastic meets requirements of UL94 V-O at 3.175 mm
Fig 14. SOT428: minimum pad sizes for surface-mounting
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
9 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT258S-800LT_1
20080902
Product data sheet
-
-
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
10 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BT258S-800LT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 2 September 2008
11 of 12
BT258S-800LT
NXP Semiconductors
SCR logic level, high temperature
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 September 2008
Document identifier: BT258S-800LT_1
相关型号：
©2020 ICPDF网 联系我们和版权申明