BU4530AL [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU4530AL |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总6页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0
-
1500
800
16
40
125
3.0
-
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
-
A
Ptot
VCEsat
ICsat
Tmb ≤ 25 ˚C
-
-
W
V
IC = 10 A; IB = 2.22A
f = 32 kHz
9
A
A
f = 90 kHz
8
-
tf
Fall time.
ICsat = 9.0 A; f = 32 kHz
ICsat = 8.0 A; f = 90 kHz
0.20
0.12
0.26
-
µs
µs
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
base
2
collector
emitter
b
3
heat collector
sink
e
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
IB
Collector current peak value
Base current (DC)
-
40
A
-
10
15
125
150
150
A
IBM
Ptot
Tstg
Tj
Base current peak value
Total power dissipation
Storage temperature
-
-
A
Tmb ≤ 25 ˚C
W
˚C
˚C
-55
-
Junction temperature
April 1999
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
1.0
-
K/W
K/W
in free air
35
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
BVEBO
VCEOsust
Base-emitter breakdown voltage
IB = 1 mA
7.5
800
12.8
-
V
V
Collector-emitter breakdown voltage IB = 0 A;IC = 100 mA;
L = 25 mH
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage IC = 10 A; IB = 2.22 A
-
0.83
-
-
3.0
1.01
-
V
V
Base-emitter saturation voltage
DC current gain
IC = 10 A; IB = 2.22 A
IC = 1 A; VCE = 5 V
IC = 10 A; VCE = 5 V
0.92
12
hFE
4.8
6.6
8.5
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (32 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
ICsat = 9.0 A; IB1 = 1.8 A; (IB2 = -4.5 A)
ts
tf
3.0
0.20
4.0
0.26
µs
µs
Switching times (90 kHz line
deflection dynamic test circuit).
Turn-off storage time
ICsat = 8 A;IB1 = 1.6 A; (IB2 = -4.0 A)
ts
tf
2
0.12
-
-
µs
µs
Turn-off fall time
IC / mA
+ 50v
100-200R
250
200
Horizontal
Oscilloscope
100
0
Vertical
1R
100R
min
6V
VCE / V
30-60 Hz
VCEOsust
Fig.1. Test circuit for VCEOsust
.
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
hFE
ICsat
100
TRANSISTOR
VCE = 1V
IC
IB
DIODE
- - -Tj = 85 C
Tj = 25 C
t
t
IBend
10
10us
13us
32us
VCE
1
0.01
0.1
1
10
100
t
IC / A
Fig.3. Switching times waveforms.
Fig.6. High and low DC current gain.
hFE
ICsat
90 %
100
VCE = 5V
- - -Tj = 85 C
Tj = 25 C
IC
10 %
10
tf
t
ts
IB
IB1
t
1
0.01
0.1
1
10
100
- IB2
IC / A
Fig.4. Switching times definitions.
Fig.7. High and low DC current gain.
VBEsat /V
1
0.9
0.8
0.7
0.6
+ 150 v nominal
adjust for ICsat
- - -Ths = 85 C
Ths = 25 C
IC = 10 A
Lc
IC = 8 A
LB
T.U.T.
IBend
-VBB
Cfb
0
1
2
3
4
IB / A
Fig.5. Switching times test circuit.
Fig.8. Typical base-emitter saturation voltage.
April 1999
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
VCEsat / V
10
Zth / (K/W)
10
1
- - -Tj = 85 C
Tj = 25 C
1
0.5
0.2
0.1
0.1
0.05
IC / IB = 5
0.02
0.1
t
T
t
p
P
0.01
p
D =
D
t
T
0.001
0.01
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
0.1
1
10
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.12. Transient thermal impedance.
ts/tf / us
10
Ic(sat) (A)
10
8
8
6
4
2
0
6
4
2
0
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
IB / A
frequency (kHz)
Fig.10. Typical collector storage and fall time.
IC =9 A; Tj = 85˚C; f = 32kHz
Fig.13. ICsat during normal running vs. frequency of
operation for optimum performance
Normalised Power Derating
PD%
120
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Ths /
100
120
140
C
Fig.11. Normalised power dissipation.
PD% = 100 PD/PD 25˚C
April 1999
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
MECHANICAL DATA
Dimensions in mm
5.3 max
3.0
20.5 max
Net Mass: 9 g
3.1
3.53
4.06
6.17
8.53
3.0
4.06
1.92
25.5
26.5
2.99
2.09
3.13
3.23
22.53
22.63
seating
plane
2.39
2.45
19.5
min
18.16
3.5 max
0.8
1.35
1.0 max
3.0 max
0.4 M
5.45 5.45
Fig.14. SOT430; pin 2 connected to mounting base.
April 1999
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1999
6
Rev 1.100
相关型号：
©2020 ICPDF网 联系我们和版权申明