BUJ403BX [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BUJ403BX |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCBO
VCEO
VEBO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1200
1200
525
-
V
V
V
V
A
A
W
V
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
-
-
18
-
-
-
0.14
21
140
6
ICM
Collector current peak value
Total power dissipation
10
32
Ptot
Ths ≤ 25 ˚C
VCEsat
hFEsat
tfi
Collector-emitter saturation voltage
DC current gain
IC = 2 A; IB = 0.4 A
IC = 2 A; VCE = 5 V
IC = 2.5 A; IB1 = 0.5 A
1.0
25
Fall time
203
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
VCBO
VEBO
IC
Collector to emitter voltage
VBE = 0 V
-
1200
525
1200
-
V
V
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Emitter-base voltage (open collector)
Collector current (DC)
-
-
V
16
V
-
6
A
ICM
Collector current peak value
Base current (DC)
-
10
A
IB
IBM
Ptot
Tstg
Tj
-
3
A
Base current peak value
-
-
5
A
Total power dissipation
Ths ≤ 25 ˚C
32
W
˚C
˚C
Storage temperature
-65
-
150
150
Junction temperature
November 1999
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
AVALANCHE ENERGY CAPABILITY
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCC = 150V; VBB = -5V; LC =
15mH;LB = 1µH
EAS
Avalanche Energy Capability1
Ths ≤ 110 ˚C
-
1.0
mJ
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-a
Junction to heatsink
Junction to ambient
with heatsink compound
in free air
-
3.95
-
K/W
K/W
55
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES,ICBO
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
0.2
0.5
mA
mA
;
ICEO
Collector cut-off current 2
Emitter cut-off current
VCEO = VCEOMmax(550V)
VEB = 9 V; IC = 0 A
-
-
-
-
-
0.1
1.0
-
mA
mA
V
IEBO
VCEOsust
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA;
L = 25 mH
525
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector-emitter saturation voltage IC = 2.0 A;IB = 0.4 A
Base-emitter saturation voltage
DC current gain
-
-
19
30
17
0.14
0.89
28
45
21
1.0
1.5
-
65
25
V
V
IC = 2.0 A;IB = 0.4 A
IC = 1 mA; VCE = 5 V
IC = 500 mA;VCE = 5 V
IC = 2.0 A; VCE = 5 V
DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (resistive load)
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ton
ts
tf
Turn-on time
Turn-off storage time
Turn-off fall time
0.6
4.5
0.4
0.95
6.4
0.59
µs
µs
µs
Switching times (inductive load)
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
tsi
tfi
Turn-off storage time
Turn-off fall time
1.67
140
2.3
203
µs
ns
Switching times (inductive load)
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
tsi
tfi
Turn-off storage time
Turn-off fall time
1.9
144
2.7
216
µs
ns
1 Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche.
2 Measured with half sine-wave voltage (curve tracer).
November 1999
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
ICon
90 %
90 %
+ 50v
100-200R
IC
10 %
ts
Horizontal
Oscilloscope
Vertical
tf
ton
toff
IBon
IB
10 %
1R
300R
tr 30ns
6V
30-60 Hz
-IBoff
Fig.1. Test circuit for VCEOsust
.
Fig.4. Switching times waveforms with resistive load.
VCC
IC / mA
LC
250
100
IBon
LB
T.U.T.
10
0
-VBB
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust
.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
ICon
90 %
VCC
IC
R
L
VIM
10 %
R
B
tf
ts
t
0
T.U.T.
toff
tp
IBon
IB
T
t
-IBoff
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
November 1999
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
VCEsat/V
Normalised Power Derating
PD%
2.0
1.6
1.2
0.8
0.4
0.0
120
110
100
90
80
70
60
50
40
30
20
10
0
IC=1A
2A
3A
4A
0
20
40
60
80
Tmb /
100
120
140
0.01
0.10
IB/A
1.00
10.00
C
Fig.7. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
VBESAT/V
1.4
HFE
80
125 C
50
30
1.2
20
15
-40 C
Tj=25 C
1
10
5
-40C
0.8
25C
2
0.6
Tj = 100C
0.01
0.05 0.1
0.3
IC/A
1
2
3
5
10
5
10
2
0.1
0.5
1
IC/A
Fig.8. Typical DC current gain. hFE = f(IC)
parameter VCE = 1V
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
VCESAT/V
0.6
HFE
80
125 C
50
0.5
30
Tj = 100C
20
15
-40 C
Tj=25 C
0.4
10
5
0.3
25C
0.2
0.1
0
-40C
2
0.01
0.05 0.1
0.5
1
2
3
5
10
0.2
0.4
0.6
1
IC/A
2
5 6
IC/A
Fig.9. Typical DC current gain. hFE = f(IC)
parameter VCE = 5V
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.8
November 1999
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
Zth / (K/W)
0.5
VCC
10
1
0.2
0.1
0.05
LC
0.1
0.02
VCL(RBSOAR)
PROBE POINT
tp
t
p
P
D =
D
IBon
T
LB
0.01
0.001
D=0
t
T
T.U.T.
-VBB
1u 10u 100u 1m 10m 100m
t / s
1
10 100
Fig.13. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
Fig.15. Test circuit for reverse bias safe operating
area.
Vcl ≤ 1200V; Vcc = 150V; VBB = -5V; LB = 1µH;Lc =
200µH
IC (A)
11
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600 800
VCEclamp (V)
1,000
1,200
1,400
Fig.14. Reverse bias safe operating area. Tj ≤ Tj max
November 1999
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
6.4
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1999
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1999
7
Rev 1.100
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NXP
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