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BUK7C06-40AITE [NXP]

N-channel TrenchMOS standard level FET; N沟道的TrenchMOS标准水平FET
BUK7C06-40AITE
型号： BUK7C06-40AITE
厂家： NXP    NXP
描述：

N-channel TrenchMOS standard level FET
N沟道的TrenchMOS标准水平FET

晶体 晶体管 开关 脉冲
文件： 总14页 (文件大小：108K)
中文：  中文翻译
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BUK7C06-40AITE  
N-channel TrenchMOS standard level FET  
Rev. 04 — 23 June 2005  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package  
using TrenchMOS technology, featuring very low on-state resistance and including  
TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and  
overtemperature protection.  
1.2 Features  
■ Q101 compliant  
■ ESD protection  
■ Integrated temperature sensor  
■ Integrated current sensor  
1.3 Applications  
■ Variable valve timing for engines  
■ Automotive and power switching  
■ Electrical power assisted steering  
■ Fan control  
1.4 Quick reference data  
■ VDS ≤ 40 V  
■ ID ≤ 155 A  
■ RDSon = 4.7 mΩ (typ)  
■ VF = 658 mV (typ)  
■ SF = −1.54 mV/K (typ)  
■ ID/Isense = 615 (typ)  
2. Pinning information  
Table 1:  
Pinning  
Pin  
1
Description  
gate (G)  
Simplified outline  
Symbol  
D
A
mb  
2
Isense  
3
anode (A)  
drain (D)  
4
G
5
cathode (K)  
kelvin source  
source (S)  
4
6
1 2 3 5 6 7  
7
SOT427 (D2PAK)  
I
sense  
S
K
mb  
mounting base; connected to  
drain (D)  
Kelvin source  
sym110  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
3. Ordering information  
Table 2:  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK7C06-40AITE  
D2PAK  
Plastic single-ended surface mounted package; 7 leads (one lead SOT427  
cropped)  
4. Limiting values  
Table 3:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
40  
Unit  
V
drain-source voltage  
drain-gate voltage (DC)  
gate-source voltage  
drain current  
-
-
-
-
-
-
-
-
-
-
-
VDGR  
VGS  
RGS = 20 kΩ  
40  
V
±20  
155  
75  
V
[1]  
[2]  
[2]  
ID  
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3  
A
A
Tmb = 100 °C; VGS = 10 V; see Figure 2  
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3  
Tmb = 25 °C; see Figure 1  
continuous  
75  
A
IDM  
peak drain current  
620  
272  
10  
A
Ptot  
total power dissipation  
W
mA  
mA  
V
IGS(CL)  
gate-source clamping  
current  
tp = 5 ms; δ = 0.01  
50  
Visol(FET-TSD) FET to temperature sense  
diode isolation voltage  
±100  
Tstg  
Tj  
storage temperature  
junction temperature  
−55  
−55  
+175  
+175  
°C  
°C  
Source-drain diode  
[1]  
[2]  
IDR  
reverse drain current  
Tmb = 25 °C  
-
-
-
155  
75  
A
A
A
IDRM  
peak reverse drain current  
Tmb = 25 °C; pulsed; tp ≤ 10 µs  
unclamped inductive load; ID = 75 A;  
620  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
-
1.46  
6
J
VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting  
at Tj = 25 °C  
Electrostatic discharge  
Vesd electrostatic discharge  
voltage, pins 1, 2, 4, 6, 7  
Human Body Model; C = 100 pF; R = 1.5 kΩ  
-
kV  
[1] Current is limited by power dissipation chip rating.  
[2] Continuous current is limited by package.  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
2 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
03na19  
03ng16  
120  
160  
I
D
P
(%)  
der  
(A)  
120  
80  
80  
40  
0
capped at 75A  
due to package  
40  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
(°C)  
T
(°C)  
mb  
mb  
VGS ≥ 10 V  
Ptot  
Pder  
=
× 100 %  
-----------------------  
P
°
tot(25 C)  
Fig 1. Normalized total power dissipation as a  
function of mounting base temperature  
Fig 2. Continuous drain current as a function of  
mounting base temperature  
03ni28  
3
10  
Limit R  
= V /I  
DS D  
I
DSon  
D
t
= 10 µs  
p
(A)  
100 µs  
1 ms  
2
10  
capped at 75 A due to package  
DC  
10 ms  
10  
100 ms  
1
2
1
10  
10  
V
(V)  
DS  
Tmb = 25 °C; IDM single pulse  
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
3 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
5. Thermal characteristics  
Table 4:  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
K/W  
K/W  
[1]  
thermal resistance from junction to ambient  
thermal resistance from junction to mounting base  
-
-
-
-
Rth(j-mb)  
see Figure 4  
0.55  
[1] Mounted on printed-circuit board; minimum footprint  
03ni29  
1
Z
th(j-mb)  
δ = 0.5  
(K/W)  
0.2  
−1  
10  
10  
10  
0.1  
0.05  
0.02  
t
p
−2  
P
δ =  
T
single shot  
t
t
p
T
−3  
−6  
−5  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
10  
10  
1
10  
t
(s)  
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
4 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
6. Characteristics  
Table 5:  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source breakdown  
voltage  
ID = 0.25 mA; VGS = 0 V  
Tj = 25 °C  
40  
36  
-
-
-
-
V
V
Tj = −55 °C  
VGS(th)  
gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9  
Tj = 25 °C  
Tj = 175 °C  
Tj = −55 °C  
2
1
-
3
-
4
V
V
V
-
-
4.4  
IDSS  
drain leakage current  
VDS = 40 V; VGS = 0 V  
Tj = 25 °C  
-
0.1  
-
10  
250  
-
µA  
µA  
V
Tj = 175 °C  
-
V(BR)GSS gate-source breakdown  
voltage  
IG = ±1 mA; −55 °C < Tj < +175 °C  
20  
22  
IGSS  
gate leakage current  
VGS = ±10 V; VDS = 0 V  
Tj = 25 °C  
-
-
22  
-
1000 nA  
Tj = 175 °C  
10  
µA  
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 50 A; see Figure 7 and 8  
Tj = 25 °C  
-
4.7  
-
6
mΩ  
mΩ  
mV  
Tj = 175 °C  
-
11.4  
668  
VF  
forward voltage of  
IF = 250 µA  
648  
658  
temperature sense diode  
SF  
temperature coefficient of  
temperature sense diode  
IF = 250 µA; −55 °C < Tj < +175 °C  
−1.4  
25  
−1.54 −1.68 mV/K  
Vhys  
ID/Isense  
forward voltage hysteresis of 125 µA < IF < 250 µA  
temperature sense diode  
32  
50  
mV  
ratio of drain current to sense VGS = 10 V; −55 °C < Tj < +175 °C  
585  
615  
645  
current  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VGS = 10 V; VDS = 32 V; ID = 25 A;  
see Figure 14  
-
-
-
-
-
-
120  
19  
-
-
-
-
-
-
nC  
nC  
nC  
pF  
pF  
pF  
VGS = 10 V; VDS = 32 V; ID = 25 A;  
see Figure 14  
VGS = 10 V; VDS = 32 V; ID = 25 A;  
see Figure 14  
50  
VGS = 0 V; VDS = 25 V; f = 1 MHz;  
see Figure 12  
4300  
1400  
820  
Coss  
Crss  
VGS = 0 V; VDS = 25 V; f = 1 MHz;  
see Figure 12  
reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz;  
see Figure 12  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
5 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
Table 5:  
Characteristics …continued  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
VDD = 30 V; RL = 1.2 Ω; VGS = 10 V;  
RG = 10 Ω  
-
35  
-
ns  
rise time  
VDD = 30 V; RL = 1.2 Ω; VGS = 10 V;  
RG = 10 Ω  
-
-
-
-
-
115  
155  
110  
2.5  
-
-
-
-
-
ns  
ns  
ns  
nH  
nH  
turn-off delay time  
fall time  
VDD = 30 V; RL = 1.2 Ω; VGS = 10 V;  
RG = 10 Ω  
VDD = 30 V; RL = 1.2 Ω; VGS = 10 V;  
RG = 10 Ω  
LD  
LS  
internal drain inductance  
internal source inductance  
measured from upper edge of drain  
mounting base to center of die  
measured from source lead to source bond  
pad  
7.5  
Source-drain diode  
VSD  
source-drain (diode forward) IS = 40 A; VGS = 0 V; see Figure 18  
voltage  
-
-
-
0.85  
96  
1.2  
V
trr  
reverse recovery time  
IS = 20 A; dIS/dt = −100 A/µs; VGS = −10 V;  
DS = 30 V  
-
-
ns  
nC  
V
Qr  
recovered charge  
IS = 20 A; dIS/dt = −100 A/µs; VGS = −10 V;  
224  
VDS = 30 V  
03ni22  
03ni21  
18  
300  
7.5  
7.0  
8.0  
10.0  
20.0  
Label is V (V)  
GS  
R
I
DSon  
(mΩ)  
D
(A)  
6.5  
6.0  
12  
200  
5.5  
5.0  
6
0
100  
4.5  
4.0  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
(V)  
V
(V)  
V
GS  
DS  
Tj = 25 °C; tp = 300 µs  
Tj = 25 °C; ID = 50 A  
Fig 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 6. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
6 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
03ni23  
03ni30  
12  
2.0  
1.6  
1.2  
0.8  
0.4  
0
Label is V (V)  
GS  
R
a
DSon  
(mΩ)  
5.5  
10  
6.0  
8
6
4
2
7.0  
8.0  
9.0  
10.0  
0
40  
80  
120  
−60  
0
60  
120  
180  
I
(A)  
T (°C)  
j
D
Tj = 25 °C; tp = 300 µs  
RDSon  
a =  
----------------------------  
RDSon(25 C)  
°
Fig 7. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 8. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
03aa32  
03aa35  
−1  
5
10  
V
I
D
(A)  
GS(th)  
(V)  
min  
typ  
max  
−2  
−3  
−4  
−5  
−6  
4
3
2
1
0
10  
max  
typ  
10  
10  
10  
10  
min  
−60  
0
60  
120  
180  
0
2
4
6
T (°C)  
j
V
(V)  
GS  
ID = 1 mA; VDS = VGS  
Tj = 25 °C; VDS = VGS  
Fig 9. Gate-source threshold voltage as a function of  
junction temperature  
Fig 10. Sub-threshold drain current as a function of  
gate-source voltage  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
7 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
03ni24  
03ne67  
80  
8
6
4
2
g
fs  
C
(nF)  
(S)  
60  
C
iss  
40  
20  
0
C
C
oss  
rss  
0
10  
−1  
2
0
25  
50  
75  
100  
1
10  
10  
I
(A)  
V
(V)  
DS  
D
Tj = 25 °C; VDS = 25 V  
VGS = 0 V; f = 1 MHz  
Fig 11. Forward transconductance as a function of  
drain current; typical values  
Fig 12. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
03ni25  
03ni26  
100  
10  
V
(V)  
GS  
I
D
(A)  
8
6
4
2
0
75  
V
= 14 V  
32 V  
DS  
50  
25  
0
T = 175 °C  
25 °C  
j
0
2
4
6
0
40  
80  
120  
V
(V)  
Q (nC)  
G
GS  
VDS = 25 V  
Tj = 25 °C; ID = 25 A  
Fig 13. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 14. Gate-source voltage as a function of turn-on  
gate charge; typical values  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
8 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
03ne84  
03ne85  
700  
−1.70  
V
F
(mV)  
max  
S
F
(mV/K)  
600  
−1.60  
typ  
500  
400  
−1.50  
−1.40  
min  
0
50  
100  
150  
200  
645  
655  
665  
675  
T (°C)  
j
V
(mV)  
F
IF = 250 µA  
VF at Tj = 25 °C; IF = 250 µA  
Fig 15. Forward voltage of temperature sense diode as  
a function of junction temperature; typical  
values  
Fig 16. Temperature coefficient of temperature sense  
diode as a function of forward voltage; typical  
values  
003aab048  
03ni27  
800  
100  
I
I /I  
S
D
sense  
(A)  
700  
75  
T = 175 °C  
j
25 °C  
600  
500  
400  
50  
25  
0
4
8
12  
16  
20  
0
0.4  
0.8  
1.2  
V
(V)  
V
(V)  
GS  
SD  
ID = 25 A  
VGS = 0 V  
Fig 17. Drain-sense current ratio as a function of gate  
voltage; typical values  
Fig 18. Source (diode forward) current as function of  
source-drain (diode forward) voltage; typical  
values  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
9 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
7. Package outline  
Plastic single-ended surface mounted package (D2PAK); 7 leads (one lead cropped)  
SOT427  
A
A
E
1
D
1
mounting  
base  
D
H
D
4
L
p
1
7
b
c
e
e
e
e
e
e
Q
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
A
A
L
H
Q
UNIT  
b
c
D
E
e
1
p
D
1
max.  
1.40  
1.27  
4.50  
4.10  
0.85  
0.60  
0.64  
0.46  
2.90 15.80 2.60  
2.10 14.80 2.20  
1.60 10.30  
1.20 9.70  
mm  
11  
1.27  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-10-13  
05-03-09  
SOT427  
Fig 19. Package outline SOT427 (D2PAK)  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
10 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
8. Soldering  
10.85  
10.60  
10.50  
1.50  
7.50  
7.40  
1.70  
2.15  
1.50  
2.25  
8.275  
8.35  
8.15  
4.60  
0.30  
4.85  
5.40  
7.95  
8.075  
3.00  
0.20  
0.70  
0.80  
solder lands  
solder resist  
occupied area  
solder paste  
1.27  
(4×)  
2.54  
8.92  
MSD059  
Dimensions in mm  
Fig 20. Reflow soldering footprint for SOT427  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
11 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
9. Revision history  
Table 6:  
Document ID  
BUK7C06-40AITE_4 20050623  
Modifications: • Figure 16: graph corrected  
BUK7C06-40AITE_3 20050616 Product data sheet  
Revision history  
Release date Data sheet status  
Product data sheet  
Change notice Doc. number  
Supersedes  
-
-
BUK7C06-40AITE_3  
-
9397 750 15176 BUK7C06_40AITE-02  
Modifications:  
• The format of this data sheet has been redesigned to comply with the new presentation and  
information standard of Philips Semiconductors.  
• Section 1 “Product profile” and Table 5: ID/Isense values changed.  
• Figure 17: graph changed.  
BUK7C06_40AITE-02 20040129  
Product data  
-
9397 750 12487 BUK7C06_40AITE-01  
Modifications:  
• Section 3 “Ordering information” added  
• Section 1 and Table 5: RDSon typical value changed  
• Section 1 and Table 5: ID/Isense typical value changed  
• Table 5: Qg(tot), Qgs and Qgd typical values changed  
• Table 5: Ciss, Coss and Crss typical values changed  
• Figure 5, 6, 7, 11, 13, 17, 18: graphs changed  
BUK7C06_40AITE-01 20020717  
Product data  
-
9397 750 09873 -  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
12 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
10. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
11. Definitions  
Short-form specification — The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Limiting values definition — Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Application information — Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
13. Trademarks  
Notice — All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.  
12. Disclaimers  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
14. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
BUK7C06-40AITE_4  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 04 — 23 June 2005  
13 of 14  
BUK7C06-40AITE  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Contact information . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
© Koninklijke Philips Electronics N.V. 2005  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 23 June 2005  
Document number: BUK7C06-40AITE_4  
Published in The Netherlands  

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