BUK9606-55A [NXP]
TrenchMOS logic level FET; 的TrenchMOS逻辑电平FET
| 型号： | BUK9606-55A |
| 厂家： | 
NXP |
| 描述： | TrenchMOS logic level FET |
| 文件： | 总17页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
TrenchMOS™ logic level FET
Rev. 03 — 23 July 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);
BUK9E06-55A in SOT226 (I2-PAK).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
c
c
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
mb
mb
2
drain (d)
d
s
3
source (s)
mb
mounting base,
connected to
drain (d)
g
2
MBB076
1
3
MBK116
1
2 3
MBK112
MBK106
1
2 3
SOT226 (I2-PAK)
SOT78 (TO-220AB) SOT404 (D2-PAK)
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
55
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
[1]
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
−
154
300
175
6.3
6.7
5.8
A
Ptot
Tj
total power dissipation
junction temperature
−
W
−
°C
RDSon
drain-source on-state resistance
Tj = 25 °C; VGS = 5 V; ID = 25 A
Tj = 25 °C; VGS = 4.5 V; ID = 25 A
Tj = 25 °C; VGS = 10 V; ID = 25 A
5.3
5.5
4.8
mΩ
mΩ
mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
55
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
−
55
V
−
±15
154
75
V
[1]
[2]
[2]
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
−
A
−
A
Tmb = 100 °C; VGS = 5 V; Figure 2
−
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
−
616
A
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; Figure 1
−
300
W
−55
−55
+175
+175
°C
°C
operating junction temperature
Source-drain diode
[1]
[2]
IDR
reverse drain current (DC)
Tmb = 25 °C
−
−
−
154
75
A
A
A
IDRM
pulsed reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
616
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
−
1.1
J
VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
2 of 16
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
Philips Semiconductors
03na19
120
180
I
D
P
der
(A)
160
(%)
100
140
120
100
80
80
60
40
20
0
60
Capped at 75A due to package
40
20
0
25
50
75
100
125
150
175
T (ºC)
200
0
25
50
75 100 125 150 175 200
j
T
o
mb ( C)
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
3
10
R
= V / I
DS D
DSon
I
D
(A)
t
= 10 us
p
2
10
100 us
1 ms
Capped at 75 A due to package
D.C.
10 ms
10
t
p
P
δ
=
100 ms
T
t
t
p
T
1
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
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7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 and
SOT226 packages
60
K/W
mounted on printed circuit board;
minimum footprint; SOT404
package
50
K/W
K/W
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
0.5
7.1 Transient thermal impedance
03nf03
1
Z
th(j-mb)
(K/W)
δ = 0.5
-1
0.2
10
10
10
0.1
0.05
0.02
-2
-3
t
p
P
δ =
T
Single Shot
t
t
p
T
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08416
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Product data
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8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
55
50
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
1
1.5
−
2
V
V
V
Tj = 175 °C
Tj = −55 °C
0.5
−
−
−
2.3
IDSS
drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VGS = ±10 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Figure 7 and 8
Tj = 25 °C
−
−
−
−
5.3
−
6.3
13.2
6.7
mΩ
mΩ
mΩ
mΩ
Tj = 175 °C
VGS = 4.5 V; ID = 25 A
VGS = 10 V; ID = 25 A
−
4.8
5.8
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
−
−
−
−
−
−
−
6500
1000
650
45
8600
pF
pF
pF
ns
ns
ns
ns
nH
1200
850
−
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
180
420
235
4.5
−
td(off)
tf
turn-off delay time
fall time
−
−
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
−
from contact screw on
mounting base to centre of
die SOT78
−
−
−
3.5
2.5
7.5
−
−
−
nH
nH
nH
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
Ls
internal source inductance
from source lead to source
bond pad
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Product data
Rev. 03 — 23 July 2001
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Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward) IS = 30 A; VGS = 0 V;
−
0.85
1.2
V
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
−
−
80
−
−
ns
Qr
200
nC
03ne98
03ne99
8
400
I
6
D
5
10
R
(A)
350
DSon
7
(mΩ)
7
6
5
4
300
250
200
150
100
50
V
(V) =
4
GS
3
2.4
0
0
2
4
6
8
10
(V)
2
4
6
8
10
V
DS
V
(V)
GS
Tj = 25 °C; tp = 300 µs
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03ne89
03nf00
2.4
8
R
DSon
(mΩ)
a
V
(V) = 3
GS
1.8
7
6
5
4
3.2
3.4
3.6
4
1.2
0.6
0
5
0
20
40
60
80
100
-60
0
60
120
180
o
I
(A)
T ( C)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
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BUK9506-55A; BUK9606-55A;
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Philips Semiconductors
03aa33
03aa36
2.5
-1
10
V
I
GS(th)
D
(V)
(A)
max
2
-2
10
typ
-3
1.5
10
min
typ
max
min
-4
-5
-6
1
10
10
10
0.5
0
-60
0
60
120
180
0
0.5
1
1.5
2
2.5
V
3
(V)
T (oC)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ne96
03nf01
140
18000
g
(S)
fs
C (pF)
16000
120
14000
12000
10000
8000
100
80
60
40
20
0
Ciss
6000
4000
2000
0
Coss
Crss
-2
10
-1
10
2
0
20
40
60
80
100
1
10
10
I
(A)
V
(V)
D
DS
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
7 of 16
BUK9506-55A; BUK9606-55A;
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03ne97
03ne95
100
5
I
V
(V)
D
(A)
GS
80
4
V
= 14 V
DD
V
= 44 V
DD
60
40
3
2
1
0
20
o
T = 175
j
C
o
T = 25
j
C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
3.5
(V)
0
20
40
60
80
100
Q
120
(nC)
GS
G
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03ne94
100
I
S
(A)
80
60
40
20
o
T = 175
j
C
o
T = 25
j
C
0
0
0.2
0.4
0.6
0.8
V
1.0
(V)
SD
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
8 of 16
BUK9506-55A; BUK9606-55A;
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9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
1
L
1
A
c
UNIT
p
q
Q
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
00-09-07
01-02-16
SOT78
3-lead TO-220AB
Fig 16. SOT78 (TO-220AB).
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
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BUK9506-55A; BUK9606-55A;
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2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-02-12
SOT404
Fig 17. SOT404 (D2-PAK).
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
10 of 16
BUK9506-55A; BUK9606-55A;
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Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
A
A
E
D
1
1
mounting
base
D
L
1
L
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
2
max
L
L
D
D
1
A
1
b
c
E
UNIT
A
b
e
L
Q
1
1
4.5
4.1
1.40
1.27
0.9
0.7
1.3
1.0
0.7
0.4
9.65
8.65
1.5
1.1
10.3
9.7
15.0
13.5
3.30
2.79
2.6
2.2
mm
2.54
3.0
Note
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
low-profile
3-lead TO-220AB
99-05-27
99-09-13
SOT226
Fig 18. SOT226 (I2-PAK).
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
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10. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.15
1.50
2.25
8.275
8.35
8.15
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
occupied area
solder paste
5.08
MSD057
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT404.
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
12 of 16
BUK9506-55A; BUK9606-55A;
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11. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
03 20010723
Product data; third version. Data sheet updated to Data Builder Two format, with the
addition of SOT226 part.
02 19991202
01 19981011
-
-
Product Specification; second version
Product Specification; initial version
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
13 of 16
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12. Data sheet status
[1]
[2]
Data sheet status
Product status
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
13. Definitions
14. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 08416
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Product data
Rev. 03 — 23 July 2001
14 of 16
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Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA72)
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
15 of 16
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
7.1
8
9
10
11
12
13
14
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 23 July 2001
Document order number: 9397 750 08416
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
相关型号：
BUK9608-55A/T3
TRANSISTOR 125 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
NXP
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