BY329X [NXP]
Rectifier diodes fast, soft-recovery; 整流二极管快速软恢复
| 型号： | BY329X |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes fast, soft-recovery |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated double diffused
rectifier diodes in a full pack plastic
envelope featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic. The
devices are intended for use in TV
receivers, monitors and switched
mode power supplies.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
-800 -1000 -1200
BY329X
VRRM
Repetitive peak reverse
800 1000 1200
V
voltage
IF(AV)
IFSM
Average forward current
Non-repetitive peak
forward current
8
65
8
65
8
65
A
A
trr
Reverse recovery time
145
145
145
ns
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode
anode
case
k
1
a
2
2
case isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-800 -1000 -1200
VRSM
Non-repetitive peak reverse
-
800
1000 1200
V
voltage
VRRM
VRWM
Repetitive peak reverse voltage
Crest working reverse voltage
Average forward current1
-
-
800
600
1000 1200
800
8
V
V
1000
IF(AV)
square wave; δ = 0.5;
-
A
T
hs ≤ 83 ˚C
sinusoidal; a = 1.57;
hs ≤ 90 ˚C
-
7
A
T
IF(RMS)
IFRM
RMS forward current
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
-
11
16
A
A
T
hs ≤ 83 ˚C
IFSM
Non-repetitive peak forward
current.
t = 10 ms
-
-
65
71
A
A
t = 8.3 ms
sinusoidal; Tj = 150 ˚C prior
to surge; with reapplied
VRWM(max)
I2t
Tstg
Tj
I2t for fusing
Storage temperature
Operating junction temperature
t = 10 ms
-
-40
-
28
150
150
A2s
˚C
˚C
1 Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
waveform;
-
2500
V
both terminals to external
heatsink
R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
4.8
5.9
-
K/W
K/W
K/W
heatsink
without heatsink compound
Rth j-a
Thermal resistance junction to in free air.
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
IR
Forward voltage
Reverse current
IF = 20 A
VR = VRWM; Tj = 125 ˚C
-
-
1.5
0.1
1.85
1.0
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
trr
Reverse recovery time
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs
-
-
-
125
0.5
50
145
0.7
60
ns
µC
A/µs
Qs
Reverse recovery charge
dIR/dt
Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs
recovery current
May 1995
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
IFS (RMS) / A
dI
100
90
80
70
60
50
40
30
20
10
0
I
F
F
dt
IFSM
trr
time
Qs
100%
25%
I
I
R
rrm
1ms
10ms
0.1s
1s
10s
tp / s
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied VRWM
.
Ths(max) / C
IF / A
PF / W
30
20
10
0
20
15
10
5
54
78
Vo = 1.25 V
Rs = 0.03 Ohms
D = 1.0
Tj = 150 C
Tj = 25 C
0.5
0.2
102
126
150
0.1
t
T
p
t
p
I
D =
typ
max
t
T
0
1.5
0
0.5
1
2
0
2
4
6
IF(AV) / A
8
10
12
VF / V
Fig.2. Maximum forward dissipation, PF = f(IF(AV));
square wave current waveform; parameter D = duty
cycle = tp/T.
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter Tj
Ths(max) / C
a = 1.57
Qs / uC
PF / W
10
15
10
5
78
Tj = 150 C
Tj = 25 C
Vo = 1.25 V
Rs = 0.03 Ohms
IF = 10 A
10 A
1.9
2.2
102
2 A
2.8
1 A
2 A
4
1
1 A
126
150
0.1
0
10
-dIF/dt (A/us)
1
100
0
2
4
6
8
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(IF(AV));
sinusoidal current waveform; parameter a = form
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
factor = IF(RMS)/IF(AV)
.
May 1995
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
Zth j-hs / (K/W)
trr / ns
1000
10
1
IF = 10 A
10A
1 A
1A
100
0.1
0.01
t
p
P
D
Tj = 150 C
Tj = 25 C
t
10
1
10
-dIF/dt (A/us)
100
10us
100us
1ms
10ms
tp / s
0.1s
1s
10s
Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C
and 150˚C
Fig.9. Transient thermal impedance Zth = f(tp)
B
Cd / pF
100
10
1
10
1000
1
100
VR / V
Fig.8. Typical junction capacitance Cd at f = 1 MHz;
Tj = 25˚C
May 1995
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
Fig.10. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1995
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1995
6
Rev 1.000
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