KMZ41 [NXP]
Magnetic field sensor; 磁科幻场传感器![KMZ41](http://pdffile.icpdf.com/pdf1/p00052/img/icpdf/KMZ41_270140_icpdf.jpg)
型号: | KMZ41 |
厂家: | ![]() |
描述: | Magnetic field sensor |
文件: | 总12页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
KMZ41
Magnetic field sensor
Preliminary specification
2000 Apr 18
Supersedes data of 1998 Mar 26
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
DESCRIPTION
The KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
handbook, halfpage 8
5
x
y
strength > 40 kA/m (recommended field
strength > 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.
pin 1
index
1
4
MGD790
PINNING
PIN
SYMBOL
DESCRIPTION
Fig.1 Simplified outline SOT96-1.
1
2
3
4
5
6
7
8
−VO1
−VO2
VCC2
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
ground 2
VCC1
+VO1
+VO2
GND2
GND1
ground 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC1
VCC2
S
bridge supply voltage
bridge supply voltage
−
5
9
9
V
V
−
5
sensitivity (α1 = 45°; α2 = 0°)
bridge resistance
offset voltage
2.44
2
2.72
2.5
−
3.00
3
mV/°
kΩ
Rbridge
Voffset1
Voffset2
−2
−2
+2
+2
mV/V
mV/V
offset voltage
−
2000 Apr 18
2
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
CIRCUIT DIAGRAM
handbook, halfpage
+V
+V
GND1
GND2
7
O2
6
O1
5
8
1
2
3
4
MGD789
−V
−V
V
V
O1
O2
CC2
CC1
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCC
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
bridge supply voltage
total power dissipation
storage temperature
−
9
V
Ptot
−
90
mW
°C
Tstg
−65
−40
+150
+150
Tbridge
bridge operating temperature
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
155
K/W
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
CHARACTERISTICS
Tamb = 25 °C; Hrotation = 100 kA/m; VCC1 = 5 V; VCC2 = 5 V unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC1
VCC2
S
bridge supply voltage
bridge supply voltage
sensitivity
−
−
5
5
9
9
V
V
open circuit, note 1;
α = 0° (bridge 2);
α = 45° (bridge 1)
2.44
2.72
3.00
mV/°
Vpeak 1
Vpeak 2
peak voltage
peak voltage
note 2; see Fig.4
note 2; see Fig.4
70
78
86
mV
mV
%/K
70
78
86
TCVpeak temperature coefficient of
peak voltage
Tamb = −40 to +150 °C;
note 3
−0.25
−0.31
−0.37
Rbridge
bridge resistance
note 4
2
2.5
3
kΩ
TCRbridge temperature coefficient of
bridge resistance
Tbridge = −40 to +150 °C
note 5
0.3
0.32
0.34
%/K
Voffset
offset voltage
see Fig.4
−2
−2
−
−
+2
mV/V
TCVoffset temperature coefficient of
offset voltage
Tbridge = −40 to +150 °C
note 6; see Fig.4
+2
µV ⁄ V
---------------
K
∆Voffset
maximum change of offset Tamb = −40 to +100 °C;
voltage within temperature note 7; see Fig.3
range
−0.2
0
0
+0.14
+0.22
mV/V
T
amb = −40 to +150 °C;
−0.28
mV/V
note 7; see Fig.3
FH
ω
hysteresis of output voltage note 8
0
0.01
25000
100
0
0.04
%FS
°/s
amplitude angular velocity
amplitude synchronism
note 9
0
t.b.f
k
note 10
99.5
−0.002
100.5
0.002
%
TCk
temperature coefficient of
amplitude synchronism
Tamb = −40 to +150 °C
note 11
%/K
∆α
angular inaccuracy
note 12
0
0.1
0.25
deg
Notes
1. Sensitivity changes with angle due to sinusoidal output.
2. Vpeak = (Vout max − Voffset) .
V
– V
peak(T1)
peak(T2)
3. TCVpeak = 100
.
-------------------------------------------------------
Where T1 = –40°C; T2 = 150°C
Vpeak(T1) (T2 – T1)
4. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, pins 6 and 2.
R
– R
bridge(T1)
bridge(T2)
5.
6.
.
TCRbridge = 100
--------------------------------------------------------------
Where T1 = –40°C; T2 = 150°C
Rbridge(T ) (T2 – T1)
1
V
– V
offset(T2)
offset(T1)
--------------------------------------------------------
(T2 – T1)
.
TCVoffset
=
Where T1 = –40°C; T2 = 150°C
7. ∆Voffset = (Voffset (T) − Voffset (T = 25 °C).
2000 Apr 18
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
8.
VO1(67.5°)135° 45° – VO1(67.5°)45°
135°
--------------------------------------------------------------------------------------------------------
2 × Vpeak1
FH1 = 100
FH2 = 100
VO2(22.5°)90° 0° – VO2(22.5°)0°
90°
----------------------------------------------------------------------------------------------
2 × Vpeak2
9. No change in VO; no distortion of sinusoidal output; tested up to 25000 °/s maximum.
V peak1
10. k =
100 .
-----------------
Vpeak2
(kT2 – kT1
)
11. TCk = 100
.
--------------------------------
Where T1 = –40°C; T2 = 150°C
k
T1(T2 – T1)
12. ∆α = αreal − αmeasured without offset voltage influences.
∆ V
MGU174
offset
(mV/V)
−2 µ V/V
K
+0.14
+0.06
0
−0.12
−0.2
+2 µ V/V
K
−40
0
70
150
T (°C)
(1) 0 = initial offset voltage per supply voltage.
(2) Typical drift of the offset voltage per supply voltage remains inside shaded area of graph.
Fig.3 Supply voltage offset voltage as a function of temperature.
2000 Apr 18
5
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
V
out
(V)
α = 0°
V
O2
direction of
magnetic field
V
out max
α
V
peak 2
−V
−V
V
GND1
GND2
O1
V
offset 2
0
O2
+V
CC2
CC1
O2
V
+V
O1
V
O1
MGU175
0
90
180
270
360
α (deg)
Fig.4 Output signals related to the direction of the magnetic field.
2000 Apr 18
6
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT96-1
076E03
MS-012
2000 Apr 18
7
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
DATA SHEET STATUS
PRODUCT
STATUS
DATA SHEET STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Apr 18
8
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
NOTES
2000 Apr 18
9
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
NOTES
2000 Apr 18
10
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
NOTES
2000 Apr 18
11
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SCA
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Date of release: 2000 Apr 18
Document order number: 9397 750 07014
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