KMZ43T [NXP]
Magnetic field sensor; 磁科幻场传感器
| 型号： | KMZ43T |
| 厂家： | 
NXP |
| 描述： | Magnetic field sensor |
| 文件： | 总9页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
KMZ43T
Magnetic field sensor
Product specification
2003 Sep 15
Supersedes data of 2003 Mar 26
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
DESCRIPTION
PINNING
PIN
The KMZ43T is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges, at a relative angle of 45° to one
another.
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
−VO1
−VO2
VCC2
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
ground 2
VCC1
A rotating magnetic field in the x-y plane will produce two
independent sinusoidal output signals, one a function of
+cos(2α) and the second a function of +sin(2α), α being
the angle between sensor and field direction (see Fig.3).
Unlike the KMZ41(1), which needs a saturation field
strength of 100 kA/m, the KMZ43T is suited to high
precision angle measurement applications under low field
conditions (saturation field strength 25 kA/m).
+VO1
+VO2
GND2
GND1
ground 1
The sensor can be operated at any frequency between
DC and 1 MHz.
handbook, halfpage 8
5
The information in application notes AN00023
(Contactless Angle Measurement Using KMZ41 and
UZZ9000) and AN00004 (Contactless Angle
Measurement Using KMZ41 and UZZ9001) is applicable
to the KMZ43T, but one should be aware of the difference
in the bridge 1 output.
x
y
pin 1
index
1
4
MGD790
Fig.1 Simplified outline SOT96-1.
(1) The KMZ41 delivers a +sin(2α) and a −cos(2α) signal.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
Per bridge
VCC
supply voltage
−
5
9
V
S
sensitivity (α2 = 0°; α1 = 135°)
offset voltage per supply voltage
bridge resistance per bridge
2.1
−2
2.35
−
2.6
+2
3.7
mV/°
mV/V
kΩ
Voffset
Rbridge
2.7
3.2
2003 Sep 15
2
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
CIRCUIT DIAGRAM
handbook, halfpage
+V
+V
GND1
GND2
7
O2
6
O1
5
8
1
2
3
4
MGD789
−V
−V
V
V
O1
O2
CC2
CC1
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCC1
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
supply voltage bridge 1
supply voltage bridge 2
storage temperature
−
−
9
9
V
V
VCC2
Tstg
−65
−40
+150
+150
°C
°C
Tamb
operating ambient temperature
STIMULATING FIELD STRENGTH
CONDITIONS
MIN.
magnetic field strength
CONDITIONS
MIN.
25
MAX.
UNIT
kA/m
Hext
note 1
−
Note
1. The minimum stimulating magnetic field in the x-y plane to ensure minimum angular inaccuracy specified in note 11
to Characteristics table.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
thermal resistance from junction to ambient
155
K/W
2003 Sep 15
3
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
CHARACTERISTICS
Tamb = 25 °C and Hext = 25 kA/m; VCC1 = 5 V; VCC2 = 5 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
MHz
ω
operating angular velocity
amplitude synchronism
0
−
1
k
note 9
99.5
100
0
100.5
%
TCk
temperature coefficient of
amplitude synchronism
Tamb = −40 to +150 °C;
note 10
−0.01
−0.01
%/K
∆α
angular inaccuracy
note 11
0
0.05
0.1
deg
Per bridge
VCC
supply voltage
−
5
0
9
V
Voffset
offset voltage per supply
voltage
see Fig.3
−2
+2
mV/V
S
sensitivity
open circuit; note 1
α1 = 135° (bridge 1)
α2 = 0° (bridge 2)
2.1
2.35
2.35
−0.29
2.6
mV/°
mV/°
%/K
2.1
2.6
TCS
temperature coefficient of
sensitivity
Tamb = −40 to +150 °C;
note 2
−0.25
−0.33
Vpeak
peak output voltage
note 3; see Fig.3
60
67
75
mV
TCVpeak
temperature coefficient of
peak output voltage
Tamb = −40 to +150 °C;
note 4
−0.25
−0.29
−0.33
%/K
Rbridge
bridge resistance
note 5
2.7
3.2
3.7
kΩ
TCRbridge
temperature coefficient of
bridge resistance
Tamb = −40 to +150 °C;
note 6
0.28
0.32
0.35
%/K
TCVoffset
temperature coefficient of
offset voltage
Tamb = −40 to +150 °C;
note 7; see Fig.3
−4
0
+4
(µV/V)/K
FH
hysteresis of output voltage
note 8
0
0.05
0.18
%FS
Notes
1. Sensitivity changes with angle due to sinusoidal output.
ST – ST
2
1
2. TCS = 100 ×
where T1 = −40 °C; T2 = 150 °C.
--------------------------------
ST × 190°C
1
3. Vpeak = (Vout max − Voffset) . Periodicity of Vpeak: sin(2α) and cos(2α) respectively.
V
– V
peak(T1)
peak(T2)
4. TCVpeak = 100 ×
where T1 = −40 °C; T2 = 150 °C.
------------------------------------------------------
Vpeak(T ) × 190°C
1
5. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, and pins 6 and 2.
R
– R
bridge(T1)
bridge(T2)
6. TCRbridge = 100 ×
where T1 = −40 °C; T2 = 150 °C.
----------------------------------------------------------
Rbridge(T ) × 190°C
1
V
– V
offset(T2)
offset(T1)
--------------------------------------------------------
190°C
7. TCVoffset
=
where T1 = −40 °C; T2 = 150 °C.
2003 Sep 15
4
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
VO1(67.5°) 135° 45° – VO1(67.5°) 45°
135°
----------------------------------------------------------------------------------------------------------
2 × Vpeak1
8. FH1 = 100 ×
FH2 = 100 ×
.
VO2(22.5°) 90° 0° – VO2(22.5°) 0°
90°
.
-------------------------------------------------------------------------------------------------
2 × Vpeak2
Vpeak1
9. k = 100 ×
.
-----------------
Vpeak2
kT – kT
2
1
10. TC = 100 ×
where T1 = −40 °C; T2 = 150 °C.
-------------------------------
kT × 190°C
1
k
11. ∆α = αreal − αmeasured without offset voltage influences due to deviations from ideal sinusoidal characteristics.
100
V
α = 0°
V
O1
out
(mV)
direction of
magnetic field
50
α
V
V
offset 1
0
−V
−V
V
GND1
GND2
O1
0
O2
+V
peak 1
−50
CC2
CC1
O2
V
+V
O1
V
O2
MBL215
−100
0
90
180
270
360
α (deg)
Fig.3 Output signals related to the direction of the magnetic field.
2003 Sep 15
5
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
MDB692
V
out
handbook, halfpage
V
O2
FH2
0
0
V
O1
FH1
0
45
90
135
α (deg)
Fig.4 Definition of hysteresis.
2003 Sep 15
6
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-18
SOT96-1
076E03
MS-012
2003 Sep 15
7
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ43T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 15
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613520/03/pp9
Date of release: 2003 Sep 15
Document order number: 9397 750 11713
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