PBRN123YS [NXP]
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ; NPN 800毫安， 40 V BISS再生能源技术; R1 = 2.2千欧， R2 = 10 kΩ的
| 型号： | PBRN123YS |
| 厂家： | 
NXP |
| 描述： | NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ |
| 文件： | 总17页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 01 — 27 February 2007
Product data sheet
1. Product profile
1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistors (RET) family in small plastic packages.
Table 1.
Product overview
Type number
Package
NXP
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
PBRN123YK
PBRN123YS[1]
PBRN123YT
SOT346
SOT54
SOT23
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
I 800 mA output current capability
I Low collector-emitter saturation voltage
VCEsat
I High current gain hFE
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and
I Switching loads
industrial segments
I Medium current peripheral driver
1.4 Quick reference data
Table 2.
Symbol Parameter
VCEO collector-emitter voltage
IO
Quick reference data
Conditions
Min
Typ
Max Unit
open base
-
-
40
V
[1]
output current
PBRN123YK, PBRN123YT
PBRN123YS
-
-
-
-
600
800
mA
mA
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
Table 2.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max Unit
IORM
repetitive peak output current
PBRN123YK, PBRN123YT tp ≤ 1 ms; δ ≤ 0.33
bias resistor 1 (input)
-
-
800
mA
R1
1.54 2.2
4.1 4.55
2.86 kΩ
R2/R1
bias resistor ratio
5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
1
1
1
1
2
3
R2
001aab347
006aaa145
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
R1
R1
1
2
R2
3
001aab348
006aaa145
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
1
2
3
R2
001aab447
006aaa145
SOT23; SOT346
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R2
1
2
006aaa144
sym007
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
2 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
plastic surface-mounted package; 3 leads
Version
PBRN123YK
SC-59A
SOT346
PBRN123YS[1] SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
PBRN123YT
-
plastic surface-mounted package; 3 leads
SOT23
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
PBRN123YK
PBRN123YS
PBRN123YT
Marking code[1]
G7
N123YS
*7P
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min
Max
40
40
5
Unit
VCBO
VCEO
VEBO
VI
collector-base voltage
-
-
-
V
V
V
collector-emitter voltage
emitter-base voltage
input voltage
open collector
positive
-
-
+22
V
V
negative
−5
IO
output current
[1]
[2][3]
[1]
PBRN123YK, PBRN123YT
-
-
-
600
700
800
mA
mA
mA
PBRN123YS
IORM
repetitive peak output current
PBRN123YK, PBRN123YT tp ≤ 1 ms; δ ≤ 0.33
-
800
mA
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
3 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
amb ≤ 25 °C
Min
Max
Unit
Ptot
total power dissipation
T
[1]
[2]
[3]
[1]
PBRN123YK, PBRN123YT
-
250
370
mW
mW
mW
mW
°C
-
-
570
PBRN123YS
-
700
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa998
600
(1)
P
tot
(mW)
400
(2)
(3)
200
0
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236)
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
4 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
006aaa999
800
tot
P
(mW)
600
400
200
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 2. Power derating curve for SOT54 (SC-43A/TO-92)
6. Thermal characteristics
Table 7.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from junction in free air
to ambient
[1]
[2]
[3]
[1]
PBRN123YK, PBRN123YT
PBRN123YS
-
-
-
-
-
-
-
-
500
338
219
179
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
PBRN123YK, PBRN123YT
-
-
105
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
5 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
006aab000
3
10
Z
δ = 1
th(j-a)
0.75
0.33
(K/W)
0.50
2
10
0.20
0.10
0.05
10
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
006aab001
3
10
Z
th(j-a)
δ = 1
(K/W)
0.75
0.33
0.50
2
10
0.20
0.10
0.05
10
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
6 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
006aab002
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.33
2
10
0.50
0.20
0.10
0.05
10
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
006aab003
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.33
2
10
0.50
0.20
0.10
0.05
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT54 (SC-43A/TO-92); typical values
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
7 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 30 V;
IE = 0 A
-
-
100
nA
ICEO
IEBO
hFE
collector-emitter cut-off
current
VCE = 30 V;
IB = 0 A
-
-
0.5
0.65
-
µA
emitter-base cut-off
current
VEB = 5 V;
IC = 0 A
-
-
mA
DC current gain
VCE = 5 V;
IC = 50 mA
300
500
500
450
-
450
750
720
650
25
[1]
[1]
[1]
VCE = 5 V;
IC = 300 mA
-
VCE = 5 V;
IC = 600 mA
-
VCE = 5 V;
IC = 800 mA
-
VCEsat
collector-emitter
saturation voltage
IC = 50 mA;
IB = 2.5 mA
35
85
220
550
1.15
1
mV
mV
mV
mV
V
IC = 200 mA;
IB = 10 mA
-
60
[1]
[1]
[1]
IC = 500 mA;
IB = 10 mA
-
160
270
0.56
0.6
0.8
IC = 600 mA;
IB = 6 mA
-
IC = 800 mA;
IB = 8 mA
-
VI(off)
VI(on)
off-state input voltage
on-state input voltage
VCE = 5 V;
IC = 100 µA
0.4
0.5
V
VCE = 0.3 V;
IC = 20 mA
1.4
V
R1
bias resistor 1 (input)
bias resistor ratio
1.54
4.1
-
2.2
4.55
7
2.86
kΩ
R2/R1
Cc
5
-
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
8 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
006aab022
006aab023
4
−1
10
10
h
FE
(1)
(2)
(3)
V
CEsat
(V)
3
10
(1)
(2)
(3)
2
−2
10
10
10
−3
1
10
10
−1
2
3
2
3
1
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 7. DC current gain as a function of collector
current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab024
006aab025
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
−1
−1
10
10
(1)
(2)
(3)
−2
−2
10
10
2
3
2
3
1
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 50
IC/IB = 100
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
9 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
006aab026
006aab027
10
10
V
V
I(off)
I(on)
(V)
(V)
(1)
(2)
(1)
1
1
(2)
(3)
(3)
−1
−1
10
10
−1
2
3
−1
2
10
1
10
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 11. On-state input voltage as a function of collector
current; typical values
Fig 12. Off-state input voltage as a function of collector
current; typical values
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
10 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
8. Package outline
3.1
2.7
1.3
1.0
0.45
0.38
4.2
3.6
3
0.6
0.2
0.48
0.40
3.0 1.7
2.5 1.3
1
2
4.8
4.4
2.54
1.27
3
1
2
0.50
0.35
0.26
0.10
5.2
5.0
14.5
12.7
1.9
Dimensions in mm
04-11-11
Dimensions in mm
04-11-16
Fig 13. Package outline SOT346 (SC-59A/TO-236)
Fig 14. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
4.2
3.6
3.6
1.27
0.48
0.40
3 max
1
2.5
0.48
max
0.40
1
2
4.8
4.4
2
5.08
4.8
4.4
2.54
1.27
3
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 15. Package outline SOT54A
Fig 16. Package outline SOT54 variant
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 17. Package outline SOT23 (TO-236AB)
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
11 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000 5000 10000
PBRN123YK SOT346
PBRN123YS SOT54
SOT54A
4 mm pitch, 8 mm tape and reel
bulk, straight leads
-115
-
-135
-
-
-412
tape and reel, wide pitch
tape ammopack, wide pitch
-
-
-116
-126
-
-
-
SOT54 variant bulk, delta pinning
-
-112
-
PBRN123YT SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
[1] For further information and the availability of packing methods, see Section 13.
10. Soldering
3.30
1.00
0.70 (3x)
0.60 (3x)
0.70
(3x)
3
0.95
3.40
3.15
1.55
0.95
1
2
1.20
2.60
2.90
sot346
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
Fig 18. Reflow soldering footprint SOT346 (SC-59A/TO-236)
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
12 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
4.70
2.80
solder lands
solder resist
occupied area
Dimensions in mm
3
5.20 4.60 1.20
1
2
sot346
1.20 (2x)
3.40
preferred transport direction during soldering
Fig 19. Wave soldering footprint SOT346 (SC-59A/TO-236)
2.90
2.50
2
1
0.85
0.85
solder lands
3.00
1.30
2.70
solder resist
solder paste
3
occupied area
0.60
(3x)
Dimensions in mm
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 20. Reflow soldering footprint SOT23 (TO-236AB)
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
13 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
preferred transport direction during soldering
2.80
sot023
4.50
Fig 21. Wave soldering footprint SOT23 (TO-236AB)
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
14 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
11. Revision history
Table 10. Revision history
Document ID
Release date
20070227
Data sheet status
Change notice
Supersedes
PBRN123Y_SER_1
Product data sheet
-
-
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
15 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PBRN123Y_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 February 2007
16 of 17
PBRN123Y series
NXP Semiconductors
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 February 2007
Document identifier: PBRN123Y_SER_1
相关型号：
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