PBSS2540F [NXP]
40 V low V NPN transistor; 40 V低V NPN晶体管
| 型号： | PBSS2540F |
| 厂家： | 
NXP |
| 描述： | 40 V low V NPN transistor |
| 文件： | 总8页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS2540F
40 V low VCEsat NPN transistor
Product specification
2001 Oct 31
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS2540F
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
• High current capability
SYMBOL
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
40
500
1
V
• Improved thermal behaviour due to flat leads
mA
A
• Enhanced performance over SOT23 general purpose
transistors.
ICM
RCEsat
<500 mΩ
APPLICATIONS
PINNING
PIN
• General purpose switching and muting
• Low frequency driver circuits
DESCRIPTION
1
2
3
base
• Audio frequency general purpose amplifier applications
emitter
collector
• Battery driven equipment (mobile phones, video
cameras, hand-held devices).
DESCRIPTION
3
handbook, halfpage
3
NPN low VCEsat transistor in a SC-89 (SOT490) plastic
package.
PNP complement: PBSS3540F.
1
2
1
2
MARKING
Top view
MAM410
TYPE NUMBER
PBSS2540F
MARKING CODE
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
2C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
40
open collector
6
500
1
mA
A
ICM
IBM
100
250
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C
−65
−
°C
Tamb
−65
°C
2001 Oct 31
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS2540F
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
500
K/W
CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL
PARAMETER
CONDITIONS
VCB = 30 V; IE = 0
CB = 30 V; IE = 0; Tj = 150 °C
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
µA
nA
V
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
−
−
100
−
VCE = 2 V; IC = 10 mA
200
100
50
−
−
V
CE = 2 V; IC = 100 mA; note 1
CE = 2 V; IC = 500 mA; note 1
−
−
V
−
−
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
50
mV
mV
mV
mV
IC = 100 mA; IB = 5 mA
−
−
100
200
250
IC = 200 mA; IB = 10 mA
−
−
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
−
380
−
<500 mΩ
base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
−
1.2
1.1
−
V
base-emitter turn-on voltage
transition frequency
VCE = 2 V; IC = 100 mA; note 1
−
−
V
IC = 100 mA; VCE = 5 V; f = 100 MHz 250
VCB = 10 V; IE = Ie = 0; f = 1 MHz
450
−
MHz
pF
Cc
collector capacitance
−
6
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Oct 31
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS2540F
MHC082
MHC085
1200
1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(mV)
1000
1000
(1)
800
(1)
(2)
800
600
600
(2)
(3)
400
200
0
400
200
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 2 V.
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MHC086
MHC084
3
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
1000
(1)
800
2
10
(2)
(1)
600
(3)
(2)
(3)
400
200
10
10
−1
2
3
−1
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
C
I
(mA)
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(1) Tamb = 150 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Oct 31
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS2540F
MHC083
MHC087
3
10
1200
handbook, halfpage
handbook, halfpage
I
C
R
CEsat
(Ω)
(mA)
(1)
1000
(2)
(3)
2
(4)
10
(5)
(6)
800
(7)
(8)
(9)
10
1
600
(10)
(1)
(2)
(3)
400
200
0
−1
10
−1
2
3
10
1
10
10
10
0
1
2
3
4
5
I
(mA)
C
V
(V)
CE
IC/IB = 20.
(1) Tamb = 150 °C.
(1) IB = 25 mA.
(2)
Tamb = 25 °C.
(5) IB = 15 mA.
(6) IB = 12.5 mA.
(7) IB = 10 mA.
(8) IB = 7.5 mA.
(9) IB = 5.0 mA.
(10) IB = 2.5 mA.
(2) IB = 22.5 mA.
(3) Tamb = −55 °C.
(3)
IB = 20 mA.
(4) IB = 17.5 mA.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
2001 Oct 31
5
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS2540F
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-10-23
SOT490
SC-89
2001 Oct 31
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS2540F
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 31
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001 Oct 31
Document order number: 9397 750 08372
相关型号：
PBSS2540FT/R
TRANSISTOR 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明