PESD5V0F1USF,315 [NXP]

PESD5V0F1USF - Extremely low capacitance unidirectional ESD protection diode;
PESD5V0F1USF,315
型号: PESD5V0F1USF,315
厂家: NXP    NXP
描述:

PESD5V0F1USF - Extremely low capacitance unidirectional ESD protection diode

局域网 二极管
文件: 总12页 (文件大小:289K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PESD5V0F1USF  
Extremely low capacitance unidirectional ESD protection  
diode  
Rev. 1 — 11 December 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Extremely low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode  
in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package  
designed to protect one signal line from the damage caused by ESD and other transients.  
1.2 Features and benefits  
Unidirectional ESD protection of one line  
Extremely low diode capacitance Cd = 0.6 pF  
ESD protection up to 10 kV according to IEC 61000-4-2  
Ultra low leakage current IRM = 1 nA  
Ultra small SMD package  
1.3 Applications  
Cellular handsets and accessories  
Portable electronics  
Communication systems  
Computers and peripherals  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
5
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
f = 1 MHz; VR = 0 V  
0.6  
0.75  
pF  
 
 
 
 
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
2
anode  
2
1
1
2
006aaa152  
Transparent  
top view  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PESD5V0F1USF  
DSN0603-2 leadless ultra small package; 2 terminals;  
SOD962  
body 0.6 0.3 0.3 mm  
4. Marking  
Table 4.  
Marking codes  
Type number  
PESD5V0F1USF  
Marking code  
4
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
IPPM  
Tj  
Parameter  
Conditions  
Min  
-
Max  
3
Unit  
A
[1]  
rated peak pulse current  
junction temperature  
ambient temperature  
storage temperature  
tp = 8/20 s  
-
150  
C  
Tamb  
Tstg  
55  
65  
+150  
+150  
C  
C  
[1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5 and  
IEC61643-321.  
Table 6.  
Symbol  
VESD  
ESD maximum ratings  
Parameter  
Conditions  
Min  
Max Unit  
[1]  
[1]  
electrostatic  
discharge voltage  
IEC 61000-4-2 (contact discharge)  
IEC 61000-4-2 (air discharge)  
machine model  
-
-
-
-
10  
kV  
kV  
V
10  
400  
10  
MIL-STD-883 (human body model)  
kV  
[1] Device stressed with ten non-repetitive ESD pulses.  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
2 of 12  
 
 
 
 
 
 
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
Table 7.  
ESD standards compliance  
Standard  
Conditions  
> 8 kV (contact)  
> 8 kV  
IEC 61000-4-2, level 4 (ESD)  
MIL-STD-883; class 3B (human body model)  
001aaa631  
I
PP  
001aaa630  
120  
100 %  
90 %  
100 % I ; 8 μs  
PP  
I
PP  
(%)  
80  
t  
e
50 % I ; 20 μs  
PP  
40  
10 %  
t
t = 0.7 ns to 1 ns  
r
0
30 ns  
60 ns  
0
10  
20  
30  
40  
t (μs)  
Fig 1. 8/20 s pulse waveform according to  
Fig 2. ESD pulse waveform according to  
IEC 61000-4-2  
IEC 61000-4-5  
6. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter  
VRWM reverse standoff  
Conditions  
Min  
Typ  
Max  
Unit  
-
-
5
V
voltage  
IRM  
reverse leakage  
current  
VRWM = 5 V  
-
1
100  
nA  
[1]  
[2]  
VCL  
VBR  
Cd  
clamping voltage  
breakdown voltage  
diode capacitance  
dynamic resistance  
IPPM = 3 A  
-
-
10  
10  
0.75  
-
V
IR = 5 mA  
6
-
8
V
f = 1 MHz; VR = 0 V  
IR = 10 A  
0.6  
0.7  
pF  
rdyn  
-
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5 and  
IEC61643-321.  
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;  
ANS/IESD STM5.1-2008.  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
3 of 12  
 
 
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
I
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢆ  
ꢌꢐꢑꢍ  
ꢀꢆꢈ  
ꢀꢆꢇ  
ꢀꢆꢄ  
ꢀꢆꢂ  
V  
CL  
V  
BR  
V  
V
RWM  
I  
I  
RM  
R
+
P-N  
I  
I  
PP  
PPM  
ꢋꢌꢉꢍ  
006aab324  
f = 1 MHz; Tamb = 25 C  
Fig 3. Diode capacitance as a function of reverse  
voltage; typical values  
Fig 4. V-I characteristics for a bidirectional  
ESD protection diode  
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢇ  
ꢁꢅ  
ꢎꢓ  
ꢌꢕꢍ  
ꢁꢂꢆꢅ  
ꢁꢀ  
ꢒꢆꢅ  
ꢂꢆꢅ  
ꢁꢀ  
ꢁꢅ  
ꢂꢀ  
ꢋꢌꢉꢍ  
ꢎꢓ  
tp = 100 ns; Transmission Line Pulse (TLP)  
Fig 5. Dynamic resistance; typical values  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
4 of 12  
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
ꢛꢝꢘꢋꢚꢛꢝꢚꢛꢊ  
ꢄꢋ /0ꢋꢘꢔ ꢔꢚꢕꢓ  
1ꢝꢎꢔꢓꢓ1ꢝꢎ12ꢛ  
ꢊ ꢋꢂꢂꢃ!ꢙ  
ꢅꢀꢋꢖꢋ"#$%  
ꢄꢅꢀꢋꢖ  
ꢁꢀ%  
ꢕꢚꢚꢛꢜꢙꢕꢚ1ꢊ  
ꢅꢀꢋꢖ  
ꢘꢙꢚ  
ꢌꢘꢛꢉꢔꢎꢛ  
ꢙꢜꢘꢛꢊ  
ꢚꢛꢝꢚꢍ  
ꢔꢛꢎꢋꢇꢁꢀꢀꢀ&ꢄ&ꢂꢋ'()*#+,  
 ꢋ-ꢋꢁꢅꢀꢋꢐꢑ.ꢋꢊ ꢋ-ꢋꢃꢃꢀꢋꢖ  
ꢁꢀ  
ꢌ,ꢉꢍ  
ꢌ,ꢉꢍ  
&ꢂ  
&ꢄ  
&ꢇ  
&ꢈ  
&ꢂ  
&ꢁꢀ  
&ꢁꢀ  
&ꢁꢀ  
ꢁꢀ  
ꢂꢀ  
ꢃꢀ  
ꢄꢀ  
ꢅꢀ  
ꢇꢀ  
ꢒꢀ  
ꢁꢀ  
ꢂꢀ  
ꢃꢀ  
ꢄꢀ  
ꢅꢀ  
ꢇꢀ  
ꢒꢀ  
)ꢋꢌ'ꢗꢍ  
)ꢋꢌ'ꢗꢍ  
3'"4$5ꢐ(ꢏꢋ6ꢈꢋ,ꢉꢋꢛꢝꢘꢋꢐ34ꢗ(ꢋ*$7(8#+5  
ꢌꢔꢛꢎꢋꢇꢁꢀꢀꢀ&ꢄ&ꢂꢋ'()*#+,ꢍ  
3'"4$5ꢐ(ꢏꢋ&ꢈꢋ,ꢉꢋꢛꢝꢘꢋꢐ34ꢗ(ꢋ*$7(8#+5  
ꢌꢔꢛꢎꢋꢇꢁꢀꢀꢀ&ꢄ&ꢂꢋ'()*#+,ꢍ  
ꢀꢀꢀꢁꢂꢂꢅꢈꢃꢇ  
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢅ  
Fig 6. ESD clamping test setup and waveforms  
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢂ  
ꢒꢀ  
ꢁꢀ  
&ꢁꢀ  
&ꢃꢀ  
&ꢅꢀ  
&ꢒꢀ  
ꢎꢓ  
ꢌꢉꢍ  
ꢎꢓ  
ꢌꢉꢍ  
ꢅꢀ  
ꢃꢀ  
ꢁꢀ  
&ꢁꢀ  
&ꢁꢀ  
ꢁꢀ  
ꢂꢀ  
ꢃꢀ  
ꢄꢀ  
ꢅꢀ  
ꢇꢀ  
)ꢋꢌ'ꢗꢍ  
ꢒꢀ  
&ꢁꢀ  
ꢁꢀ  
ꢂꢀ  
ꢃꢀ  
ꢄꢀ  
ꢅꢀ  
ꢇꢀ  
)ꢋꢌ'ꢗꢍ  
ꢒꢀ  
Fig 7. Clamped +8 kV pulse waveform  
(IEC 61000-4-2 network)  
Fig 8. Clamped 8 kV pulse waveform  
(IEC 61000-4-2 network)  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
5 of 12  
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
7. Application information  
The device is designed for the protection of one unidirectional data or signal line from  
surge pulses and ESD damage. The device is suitable on lines where the signal polarities  
are either positive or negative with respect to ground.  
49'(ꢋ)#ꢋ:(ꢋꢐ+#)(")(ꢏ  
ꢌꢐ#ꢗ9)97(ꢋꢗ9;'$4ꢋꢐ#4$+9)<ꢍ  
49'(ꢋ)#ꢋ:(ꢋꢐ+#)(")(ꢏ  
ꢌ'(;$)97(ꢋꢗ9;'$4ꢋꢐ#4$+9)<ꢍ  
ꢛꢝꢘꢋꢐ+#)(")9#'ꢋꢏ9#ꢏ(  
ꢛꢝꢘꢋꢐ+#)(")9#'ꢋꢏ9#ꢏ(  
 ꢜꢘ  
 ꢜꢘ  
3'9ꢏ9+(")9#'$4ꢋꢐ+#)(")9#'ꢋ#8ꢋ#'(ꢋ49'(  
ꢀꢀꢀꢁꢂꢂꢉꢅꢈꢉ  
Fig 9. Application diagram  
Circuit board layout and protection device placement  
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)  
and surge transients. The following guidelines are recommended:  
1. Place the device as close to the input terminal or connector as possible.  
2. Minimize the path length between the device and the protected line.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductors.  
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and  
ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
6 of 12  
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
8. Package outline  
ꢀꢆꢃꢂꢅ  
ꢀꢆꢂꢒꢅ  
ꢀꢆꢃꢂ  
ꢀꢆꢂꢈ  
ꢀꢆꢁꢅ  
ꢀꢆꢁꢃ  
ꢀꢆꢇꢂꢅ  
ꢀꢆꢅꢒꢅ  
ꢀꢆꢄ  
ꢀꢆꢂꢅ  
ꢀꢆꢂꢃ  
ꢀꢆꢀꢀꢒꢇ  
ꢘ95('ꢗ9#'ꢗꢋ9'ꢋ55  
ꢁꢂ&ꢀꢃ&ꢂꢇ  
Fig 10. Package outline DSN0603-2 (SOD962)  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
9000  
PESD5V0F1USF  
DSN0603-2 2 mm pitch, 8 mm tape and reel  
(SOD962)  
-315  
[1] For further information and the availability of packing methods, see Section 13.  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
7 of 12  
 
 
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
10. Soldering  
Footprint information for reflow soldering of leadless ultra small package; 2 terminals  
SOD962  
0.85  
0.4  
R0.025 (8×)  
0.22  
0.4  
(2×)  
0.12  
(2×)  
0.2  
(2×)  
solder land  
solder land plus solder paste  
solder paste deposit  
solder resist  
Dimensions in mm  
sod962_fr  
Fig 11. Reflow soldering footprint DSN0603-2 (SOD962)  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
8 of 12  
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
11. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20121211  
Data sheet status  
Change notice  
Supersedes  
PESD5V0F1USF v.1  
Product data sheet  
-
-
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
9 of 12  
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
12.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
10 of 12  
 
 
 
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PESD5V0F1USF  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 December 2012  
11 of 12  
 
 
PESD5V0F1USF  
NXP Semiconductors  
Extremely low capacitance unidirectional ESD protection diode  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Application information. . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Packing information . . . . . . . . . . . . . . . . . . . . . 7  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 11  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2012.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 11 December 2012  
Document identifier: PESD5V0F1USF  
 

相关型号:

PESD5V0F2UT

ESD protection diodeProduction
NEXPERIA

PESD5V0G1BL

Very low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0H1BSF

Ultra low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0H1BSN

Extremely low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0HS-SF

Ultra low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0HS2-SF

Extremely low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0L1BA

Low capacitance bidirectional ESD protection diodes in SOD323
NXP

PESD5V0L1BA,115

PESDxL1BA series - Low capacitance bidirectional ESD protection diodes in SOD323 SOD 2-Pin
NXP

PESD5V0L1BA,135

PESDxL1BA series - Low capacitance bidirectional ESD protection diodes in SOD323 SOD 2-Pin
NXP

PESD5V0L1BA-Q

Low capacitance bidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0L1BSF

Ultra low profile bidirectional low capacitance
NXP

PESD5V0L1BSF

Ultra low profile bidirectional low capacitance ESD protection diodeProduction
NEXPERIA