PESD5V0L1BA,115 [NXP]
PESDxL1BA series - Low capacitance bidirectional ESD protection diodes in SOD323 SOD 2-Pin;型号: | PESD5V0L1BA,115 |
厂家: | NXP |
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PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
I Bidirectional ESD protection of one line I ESD protection > 23 kV
I Max. peak pulse power: Ppp = 500 W
I Low clamping voltage: V(CL)R = 26 V
I IEC 61000-4-2, level 4 (ESD)
I IEC 61000-4-5 (surge); Ipp = 18 A
I Ultra low leakage current: IRM < 0.09 µA I Very small SMD plastic package
1.3 Applications
I Computers and peripherals
I Data lines
I Communication systems
I Audio and video equipment
I CAN bus protection
1.4 Quick reference data
Table 1.
Symbol
VRWM
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
reverse stand-off voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
diode capacitance
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
Cd
VR = 0 V;
f = 1 MHz
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
pF
pF
pF
pF
pF
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode 1
cathode 2
Simplified outline
Symbol
1
2
2
1
2
sym045
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PESDxL1BA series SC-76
plastic surface mounted package; 2 leads
SOD323
4. Marking
Table 4.
Marking codes
Type number
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
Marking code
AB
AC
AD
AE
AF
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
2 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
[1]
Ppp
peak pulse power
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
peak pulse current
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
junction temperature
ambient temperature
storage temperature
8/20 µs
-
-
-
-
-
500
500
200
200
200
W
W
W
W
W
[1]
Ipp
8/20 µs
-
18
A
-
15
A
-
5
A
-
5
A
-
3
A
Tj
-
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
Table 6.
Symbol
ESD
ESD maximum ratings
Parameter
Conditions
Min
Max
Unit
[1]
electrostatic discharge capability IEC 61000-4-2
(contact discharge)
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
PESDxL1BA series
HBM MIL-Std 883
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD); Figure 2
HBM MIL-Std 883; class 3
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
3 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
001aaa631
I
PP
001aaa630
120
100 %
90 %
100 % I ; 8 µs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 µs
PP
40
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
10
20
30
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61000-4-5
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
4 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse stand-off voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
reverse leakage current
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
breakdown voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
diode capacitance
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
IRM
see Figure 7
VRWM = 3.3 V
VRWM = 5.0 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IR = 5 mA
-
-
-
-
-
0.09
0.01
< 1
2
µA
µA
nA
nA
nA
1
50
50
50
< 1
< 1
V(BR)
5.8
6.4
6.9
V
V
V
V
V
7.0
7.6
8.2
14.2
17.1
25.4
15.9
18.9
27.8
16.7
20.3
30.3
Cd
VR = 0 V; f = 1 MHz;
see Figure 5 and 6
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
clamping voltage
PESD3V3L1BA
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
pF
pF
pF
pF
pF
[1]
V(CL)R
Ipp = 1 A
Ipp = 18 A
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 5A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
V
V
V
V
V
V
V
V
V
V
26
10
33
20
37
25
44
40
70
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 3 A
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
5 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
rdif
differential resistance
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
IR = 1 mA
-
-
-
-
-
-
-
-
-
-
400
80
Ω
Ω
Ω
Ω
Ω
200
225
300
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
6 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
006aaa066
001aaa193
4
10
1.2
P
PP
P
PP
(W)
P
PP(25°C)
3
10
0.8
(1)
(2)
2
10
0.4
10
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C
tp = 8/20 µs exponential decay waveform; see Figure 1
(1) PESD3V3L1BA and PESD5V0L1BA
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
006aaa067
006aaa068
110
20
C
d
C
d
(pF)
100
(pF)
16
90
80
70
60
50
(1)
12
8
(1)
(2)
(3)
(2)
4
0
0
1
2
3
4
5
0
5
10
15
20
25
V
(V)
V
(V)
R
R
Tamb = 25 °C; f = 1 MHz
Tamb = 25 °C; f = 1 MHz
(1) PESD3V3L1BA
(2) PESD5V0L1BA
(1) PESD12VL1BA
(2) PESD15VL1BA
(3) PESD24VL1BA
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
7 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
006aaa069
(1)
10
I
RM
I
RM(25°C)
1
−1
10
−100
−50
0
50
100
150
T (°C)
j
(1) PESD3V3L1BA; PESD5V0L1BA
For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
8 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
50 Ω
Z
1
2
DUT: PESDxL1BA
IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
vertical scale = 20 V/div; horizontal scale = 50 ns/div
PESD24VL1BA
vertical scale = 200 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
GND
PESD15VL1BA
PESD12VL1BA
PESD5V0L1BA
PESD3V3L1BA
GND
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
(IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
PESD3V3L1BA
GND
GND
GND
GND
GND
GND
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa070
Fig 8. ESD clamping test setup and waveforms
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
9 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
7. Application information
The PESDxL1BA series is designed for bidirectional protection of one signal line from the
damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA
series may be used on lines where the signal polarity is above and below ground. The
PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs
waveform.
line to be protected
PESDxL1BA
006aaa071
ground
Fig 9. Typical application: Bidirectional protection of one signal line
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
10 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
8. Package outline
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
Fig 10. Package outline SOD323 (SC-76)
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
11 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
PESDxL1BA series
SOD323
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 12.
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
12 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
10. Revision history
Table 10. Revision history
Document ID
Release date
20090820
Data sheet status
Change notice
Supersedes
PESDXL1BA_SER_2
Modifications:
Product data sheet
-
PESDXL1BA_SER_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 10 “Package outline SOD323 (SC-76)”: updated
PESDXL1BA_SER_1
20041004
Product data sheet
-
-
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
13 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
14 of 15
PESDxL1BA series
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes in SOD323
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2009
Document identifier: PESDXL1BA_SER_2
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