PHX10N40E [NXP]

PowerMOS transistors Avalanche energy rated; 功率MOS晶体管的额定雪崩能量


型号：	PHX10N40E
厂家：	NXP
描述：	PowerMOS transistors Avalanche energy rated 功率MOS晶体管的额定雪崩能量晶体晶体管
文件：	总8页 (文件大小：78K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V_DSS= 400 V

I_D= 5.3 A

• Stable off-state characteristics

• High thermal cycling performance

• Isolated package

R_DS(ON)≤ 0.55 Ω

GENERAL DESCRIPTION

PINNING

SOT186A

N-channel, enhancement mode

DESCRIPTION

case

field-effect

power

transistor,

intended for use in off-line switched

mode power supplies, T.V. and

computer monitor power supplies,

d.c.tod.c. converters, motorcontrol

circuits and general purpose

switching applications.

gate

drain

source

case isolated

2 3

The PHX10N40E is supplied in the

SOT186A full pack, isolated

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

T_j= 25 ˚C to 150˚C

400

± 30

5.3

3.4

Drain-gate voltage

T_j= 25 ˚C to 150˚C; R_GS= 20 kΩ

Gate-source voltage

Continuous drain current

T_hs= 25 ˚C; V_GS= 10 V

T_hs= 100 ˚C; V_GS= 10 V

T_hs= 25 ˚C

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

T_hs= 25 ˚C

˚C

- 55

150

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E_AS

Non-repetitive avalanche

energy

Unclamped inductive load, I_AS= 8.8 A;

t_p= 0.23 ms; T_jprior to avalanche = 25˚C;

526

_DD≤ 50 V; R_GS= 50 Ω; V_GS= 10 V; refer

to fig:17

E_AR

Repetitive avalanche energy¹I_AR= 10.6 A; t_p= 2.5 µs; T_jprior to

avalanche = 25˚C; R_GS= 50 Ω; V_GS= 10 V;

refer to fig:18

Repetitive and non-repetitive

avalanche current

I_AS, I_AR

10.6

1 pulse width and repetition rate limited by T_jmax.

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal

2500

three terminals to external

heatsink

waveform;

R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz

heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Thermal resistance junction with heatsink compound

3.4

K/W

to heatsink

Thermal resistance junction

to ambient

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

V_(BR)DSSDrain-source breakdown

CONDITIONS

MIN. TYP. MAX. UNIT

V_GS= 0 V; I_D= 0.25 mA

V_DS= V_GS; I_D= 0.25 mA

400

voltage

∆V_(BR)DSS/ Drain-source breakdown

0.1

%/K

∆T_j

voltage temperature

coefficient

R_DS(ON)

V_GS(TO)

g_fs

Drain-source on resistance

Gate threshold voltage

Forward transconductance

Drain-source leakage current V_DS= 400 V; V_GS= 0 V

V_DS= 320 V; V_GS= 0 V; T_j= 125 ˚C

Gate-source leakage current V_GS= ±30 V; V_DS= 0 V

V_GS= 10 V; I_D= 5.3 A

V_DS= V_GS; I_D= 0.25 mA

V_DS= 30 V; I_D= 5.3 A

2.0

3.5

0.42 0.55

Ω

3.0

4.0

I_DSS

250

200

µA

I_GSS

Q_g(tot)

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain (Miller) charge

I_D= 10.6 A; V_DD= 320 V; V_GS= 10 V

110

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 200 V; R_D= 18 Ω;

R_G= 9.1 Ω

108

L_d

L_s

Internal drain inductance

Internal source inductance

Measured from drain lead to centre of die

Measured from source lead to source

bond pad

4.5

7.5

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

1080

190

110

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_S

Continuous source current

(body diode)

T_hs= 25˚C

10.6

I_SM

V_SD

Pulsed source current (body T_hs= 25˚C

diode)

Diode forward voltage

I_S= 10.6 A; V_GS= 0 V

1.2

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_S= 10.6 A; V_GS= 0 V; dI/dt = 100 A/µs

330

4.8

µC

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

Normalised Power Derating

with heatsink compound

PHX4N60

PD%

Zth j-hs, Transient thermal impedance (K/W)

120

110

100

D = 0.5

0.2

0.1

0.05

0.02

0.1

D =

0.01

single pulse

0.001

1us

10us

100us

1ms

10ms

100ms

Ths /

100

120

140

tp, pulse width (s)

Fig.1. Normalised power dissipation.

PD% = 100 P_D/P_{D 25 ˚C}= f(T_hs)

Fig.4. Transient thermal impedance.

Z_{th j-hs}= f(t); parameter D = t_p/T

Normalised Current Derating

ID%

ID, Drain current (Amps)

Tj = 25 C

PHP10N40

10 V

120

110

100

with heatsink compound

7 V

6.5 V

6 V

5.5 V

5 V

VGS = 4.5 V

Ths /

100

120

140

VDS, Drain-Source voltage (Volts)

Fig.2. Normalised continuous drain current.

ID% = 100 I_D/I_{D 25 ˚C}= f(T_hs); conditions: V_GS≥ 10 V

Fig.5. Typical output characteristics.

I_D= f(V_DS); parameter V_GS

PHP10N40

ID, Drain current (Amps)

PHX5N40

RDS(on), Drain-Source on resistance (Ohms)

100

4.5 V 5 V 5.5 V

6 V 6.5 V

VGS = 7 V

Tj = 25 C

tp = 10 us

0.8

0.6

0.4

0.2

100 us

10 V

RDS(ON) = VDS/ID

1 ms

0.1

10 ms

100 ms

0.01

100

1000

10000

VDS, Drain-source voltage (Volts)

ID, Drain current (Amps)

Fig.3. Safe operating area. T_hs= 25 ˚C

I_D& I_DM= f(V_DS); I_DMsingle pulse; parameter t_p

Fig.6. Typical on-state resistance.

R_DS(ON)= f(I_D); parameter V_GS

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

VGS(TO) / V

ID, Drain current (Amps)

PHP10N40

Tj = 150 C

VDS > ID x RDS(on)max

max.

Tj = 25 C

typ.

min.

-60 -40 -20

80 100 120 140

VGS, Gate-Source voltage (Volts)

Tj /

Fig.7. Typical transfer characteristics.

I_D= f(V_GS); parameter T_j

Fig.10. Gate threshold voltage.

V_GS(TO)= f(T_j); conditions: I_D= 0.25 mA; V_DS= V_GS

SUB-THRESHOLD CONDUCTION

ID / A

gfs, Transconductance (S)

VDS > ID x RDS(on)max

PHP10N40

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

150 C

Tj = 25 C

2 %

typ

98 %

ID, Drain current (A)

VGS / V

Fig.8. Typical transconductance.

g_fs= f(I_D); parameter T_j

Fig.11. Sub-threshold drain current.

I_D= f(V_GS); conditions: T_j= 25 ˚C; V_DS= V_GS

Normalised RDS(ON) = f(Tj)

PHP10N40

Junction capacitances (pF)

10000

1000

100

Ciss

Coss

Crss

-60 -40 -20

20 40 60 80 100 120 140

100

1000

Tj /

VDS, Drain-Source voltage (Volts)

Fig.9. Normalised drain-source on-state resistance.

a = R_DS(ON)/R_{DS(ON)25 ˚C}= f(T_j); I_D= 5.3 A; V_GS= 10 V

Fig.12. Typical capacitances, C_iss, C_oss, C_rss.

C = f(V_DS); conditions: V_GS= 0 V; f = 1 MHz

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

PHP10N40

VGS, Gate-Source voltage (Volts)

PHP10N40

IF, Source-Drain diode current (Amps)

VGS = 0 V

ID = 10.6 A

200 V

Tj = 25 C

80 V

VDD = 320 V

150 C

Tj = 25 C

100

150

0.2

0.4

0.6

0.8

1.2

1.4

Qg, Gate charge (nC)

VSDS, Source-Drain voltage (Volts)

Fig.13. Typical turn-on gate-charge characteristics.

V_GS= f(Q_G); parameter V_DS

Fig.16. Source-Drain diode characteristic.

I_F= f(V_SDS); parameter T_j

Switching times (ns)

PHP10N40

1000

100

VDD = 200 V

VGS = 10 V

RD = 18 Ohms

Tj = 25 C

Non-repetitive Avalanche current, IAS (A)

Tj prior to avalanche = 25 C

100

td(off)

125 C

VDS

PHP10N40E

0.1

td(on)

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

RG, Gate resistance (Ohms)

Fig.14. Typical switching times; t_d(on), t_r, t_d(off), t_f= f(R_G)

Fig.17. Maximum permissible non-repetitive

avalanche current (I_AS) versus avalanche time (t_p);

unclamped inductive load

Normalised Drain-source breakdown voltage

V(BR)DSS @ Tj

1.15

Maximum Repetitive Avalanche Current, IAR (A)

100

V(BR)DSS @ 25 C

1.1

Tj prior to avalanche = 25 C

1.05

125 C

0.95

0.9

0.1

PHP10N40E

1E-03 1E-02

0.01

1E-06

1E-05

1E-04

Avalanche time, tp (s)

0.85

-100

-50

100

150

Tj, Junction temperature (C)

Fig.15. Normalised drain-source breakdown voltage;

V_(BR)DSS/V_{(BR)DSS 25 ˚C}= f(T_j)

Fig.18. Maximum permissible repetitive avalanche

current (I_AR) versus avalanche time (t_p)

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.3

max

4.6

max

3.2

3.0

2.9 max

2.8

Recesses (2x)

2.5

6.4

0.8 max. depth

15.8

max

seating

plane

15.8

max.

3 max.

not tinned

2.5

13.5

min.

0.4

1.0 (2x)

0.6

2.5

0.9

0.7

2.54

0.5

5.08

1.3

Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for F-pack envelopes.

3. Epoxy meets UL94 V0 at 1/8".

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX10N40E

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

December 1998

Rev 1.200

PHX10N40E [NXP]

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