PMDPB55XP [NXP]
3400mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020-6, 6 PIN;
| 型号： | PMDPB55XP |
| 厂家： | 
NXP |
| 描述： | 3400mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020-6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：861K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMDPB55XP
DFN2020-6
20 V, dual P-channel Trench MOSFET
Rev. 3 — 4 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC/DC converters
Power management in battery-driven
portables
Hard disc and computing power
Small brushless DC motor drive
management
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
12
V
V
A
-12
-
[1]
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
-4.5
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
-
55
70
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
D1
D2
6
5
4
2
3
7
8
4
5
1
2
3
6
S2 G2
G1 S1
017aaa258
Transparent top view
7
SOT1118 (DFN2020-6)
8
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMDPB55XP
DFN2020-6
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
SOT1118
4. Marking
Table 4.
Marking codes
Type number
PMDPB55XP
Marking code
1Z
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
2 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-20
V
-12
12
V
[1]
[1]
[1]
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-
-
-
-
-
-
-4.5
-3.4
-2.2
-14
A
A
A
IDM
Ptot
peak drain current
A
[2]
[1]
total power dissipation
490
1170
mW
mW
Tsp = 25 °C
8300 mW
Source-drain diode
[1]
IS
source current
Tamb = 25 °C
-
-1.2
A
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
3 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
017aaa410
2
-10
I
D
Limit R
= V /I
DS D
DSon
(A)
-10
(1)
(2)
-1
-1
(3)
(4)
(5)
-10
(6)
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
IDM = single pulse
(1) tp = 10 µs
(2) tp = 100 µs
(3) DC; Tsp = 25 °C
(4) tp = 10 ms
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
[1]
[2]
[2]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
-
-
223
93
256
107
63
K/W
K/W
K/W
K/W
in free air; t ≤ 5 s
55
Rth(j-sp)
thermal resistance
from junction to solder
point
in free air
10
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
4 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
017aaa398
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
10
0.33
0.2
0.1
0.25
0.05
0.02
0.01
10
1
0
-1
10
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa399
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-1
10
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
5 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.47 -0.65 -0.9
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
VGS = -4.5 V; ID = -3.4 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.6 A; Tj = 25 °C
VGS = -1.8 V; ID = -1.5 A; Tj = 25 °C
VDS = -10 V; ID = -3.4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-1
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
-10
100
100
70
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
55
78
75
110
15
99
90
135
-
gfs
forward
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = -10 V; ID = -3.4 A; VGS = -5 V;
Tj = 25 °C
-
-
-
-
-
-
16.5
1
25
-
nC
nC
nC
pF
pF
pF
1.65
785
80
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
64
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -3.4 A; VGS = -5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
14
135
68
turn-off delay time
fall time
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
-
-0.8
-1.2
V
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
6 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
017aaa411
017aaa412
-3
-4
-5
-4
-10
-4.5 V
I
D
-2.5 V
-1.8 V
-1.4 V
(A)
I
D
-3
-2
-1
0
(A)
(1)
(2)
(3)
V
= -1.2 V
GS
-10
-1.0 V
-2
-10
0
-1
-3
0
-0.25
-0.50
-0.75
-1.00
V
-1.25
(V)
GS
V
(V)
DS
Tj = 25 °C
Tj = 25 °C; VDS = −5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa413
017aaa414
-0.24
1.0
R
DSon
(Ω)
R
DSon
(Ω)
-1.2 V
0.8
0.6
0.4
0.2
0
-0.16
-0.08
0
V
GS
= -1.4 V
(1)
(2)
-1.6 V
-2.5 V
-4.5 V
-3
0
-1
-2
-4
0
-1
-2
-3
-4
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = -1 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
7 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
017aaa415
017aaa416
-4
2.0
1.5
1.0
0.5
0
I
a
D
(A)
-3
-2
-1
0
(2)
(1)
0
-0.5
-1.0
-1.5
-2.0
-60
0
60
120
180
V
GS
(V)
T (°C)
j
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa417
017aaa418
4
-1.5
10
C
(pF)
V
GS(th)
(V)
3
-1.0
-0.5
0
10
(1)
(1)
(2)
(3)
2
10
(2)
(3)
10
2
-60
0
60
120
180
0
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
8 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
017aaa419
-6
V
DS
V
GS
(V)
I
D
-4
-2
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
2
4
6
Q
G
(nC)
ID = −3.3 A; VDS = −10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa420
-4.0
I
S
(A)
-3.0
-2.0
-1.0
0
(1)
(2)
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
9 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2×)
3
1
4
6
0.65
(4×)
2.1
1.9
0.54
0.44
(2×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 18. Package outline SOT1118 (DFN2020-6)
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
10 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
solder paste
0.875
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
0.72
(6×)
(2×)
0.45
0.82
(6×)
(2×)
sot1118_fr
Fig 19. Reflow soldering footprint for SOT1118 (DFN2020-6)
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
11 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB55XP v.3
Modifications:
20120604
Product data sheet
-
PMDPB55XP v.2
•
Table 7.: VGSth values updated
PMDPB55XP v.2
PMDPB55XP v.1
20120502
20120309
Product data sheet
Product data sheet
-
-
PMDPB55XP v.1
-
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
12 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PMDPB55XP
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
13 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
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products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PMDPB55XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 4 June 2012
14 of 15
PMDPB55XP
NXP Semiconductors
20 V, dual P-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 June 2012
Document identifier: PMDPB55XP
相关型号：
PMDPB65UP
TRANSISTOR 3.5 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON-6, FET General Purpose Small Signal
NXP
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