PMEG2005AEV,115 [NXP]
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin;
| 型号： | PMEG2005AEV,115 |
| 厂家： | 
NXP |
| 描述： | PMEG2005AEV; PMEG3005AEV; PMEG4005AEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin 光电二极管 |
| 文件： | 总10页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
Very low VF MEGA Schottky barrier
rectifiers
Product data sheet
2003 Aug 20
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
FEATURES
QUICK REFERENCE DATA
• Very low forward voltage
• High surge current
SYMBOL
PARAMETER
forward current
MAX. UNIT
IF
0.5
A
• Ultra small plastic SMD package.
VR
reverse voltage
PMEG2005AEV
PMEG3005AEV
PMEG4005AEV
20
30
40
V
V
V
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
PINNING
• Inverse polarity protection
• Low power consumption applications.
PIN
DESCRIPTION
cathode
cathode
1
2
3
4
5
6
DESCRIPTION
anode
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
anode
cathode
cathode
handbook, halfpage
6
5
4
1, 2
5, 6
3, 4
MHC310
1
2
3
Fig.1 Simplified outline (SOT666 and symbol).
MARKING
TYPE NUMBER
PMEG2005AEV
MARKING CODE
G1
G2
G3
PMEG3005AEV
PMEG4005AEV
RELATED PRODUCTS
TYPE NUMBER
PMEGxx05AEA
PMEG2005EB
DESCRIPTION
FEATURE
0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier
0.5 A; 20 V very low VF MEGA Schottky rectifier
1 A; 20 V very low VF MEGA Schottky rectifier
SOD323 (SC-76) package
SOD523 (SC-79) package
higher forward current
PMEG2010EA
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
PMEG2005AEV
−
−
−
−
−
−
−
20
V
V
V
A
A
A
PMEG3005AEV
30
PMEG4005AEV
40
IF
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
note 1
0.5
IFRM
IFSM
Tj
tp ≤ 1 ms; δ ≤ 0.5; note 2
tp = 8 ms; square wave; note 2
note 3
3.5
10
150
+150
+150
°C
°C
°C
Tamb
Tstg
operating ambient temperature
storage temperature
note 3
−65
−65
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
(PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR
and IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
405
215
80
K/W
K/W
K/W
Rth j-s
thermal resistance from junction to
soldering point
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
2003 Aug 20
3
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
PMEG2005AEV PMEG3005AEV PMEG4005AEV
UNIT
SYMBOL
PARAMETER
CONDITIONS
IF = 0.1 mA
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
VF
forward voltage
90
130
90
130
200
250
340
430
30
95
130
mV
mV
mV
mV
mV
μA
μA
μA
μA
pF
IF = 1 mA
150
210
280
355
15
190
240
330
390
40
150
215
285
380
12
155
220
295
420
7
210
270
350
470
20
IF = 10 mA
IF = 100 mA
IF = 500 mA
IR
continuous reverse VR = 10 V; note 1
current
VR = 20 V; note 1
40
200
−
−
−
−
−
VR = 30 V; note 1
VR = 40 V; note 1
−
40
150
−
−
−
−
−
−
30
43
100
50
Cd
diode capacitance
VR = 1 V; f = 1 MHz 66
80
55
70
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Aug 20
4
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
GRAPHICAL DATA
MDB675
MDB676
3
5
10
10
handbook, halfpage
handbook, halfpage
I
I
R
(μA)
F
(mA)
(1)
(2)
4
3
2
10
2
10
10
10
(1)
(2)
(3)
10
1
(3)
5
10
1
−1
10
0
0.2
0.4
0.6
0
10
15
20
V
(V)
F
V
(V)
R
PMEG2005AEV
PMEG2005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MDB677
150
handbook, halfpage
C
d
(pF)
100
50
0
0
5
10
15
20
V
(V)
R
PMEG2005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
5
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
MDB672
MDB673
5
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(μA)
I
F
(mA)
(1)
(2)
4
3
2
10
2
10
10
10
(1)
(2)
(3)
10
1
(3)
10
1
−1
10
0
0.2
0.4
0.6
0
10
20
30
V
(V)
V
(V)
R
F
PMEG3005AEV
PMEG3005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
MDB674
120
handbook, halfpage
C
d
(pF)
80
40
0
0
5
10
15
20
V
(V)
R
PMEG3005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
6
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
MDB669
MDB670
5
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(μA)
I
F
(mA)
(1)
(2)
4
3
2
10
2
10
10
10
(1)
(2)
(3)
10
1
10
1
(3)
10
−1
10
0
0.2
0.4
0.6
0
20
30
40
V
(V)
V
(V)
R
F
PMEG4005AEV
PMEG4005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.8 Forward current as a function of forward
voltage; typical values.
Fig.9 Reverse current as a function of reverse
voltage; typical values.
MDB671
100
handbook, halfpage
C
d
(pF)
80
60
40
20
0
0
5
10
15
20
V
(V)
R
PMEG4005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
7
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2003 Aug 20
8
NXP Semiconductors
Product data sheet
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Aug 20
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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Printed in The Netherlands
613514/01/pp10
Date of release: 2003 Aug 20
Document order number: 9397 750 11687
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