PMEM4020APD,115_技术文档

PMEM4020APD

PNP transistor/Schottky rectiﬁer module

Rev. 02 — 31 August 2009

Product data sheet

1. Product proﬁle

1.1 General description

Combination of a PNP transistor with low V_CEsatand high current capability and a planar

Schottky barrier rectiﬁer with an integrated guard ring for stress protection in a SOT457

(SC-74) small plastic package. NPN complement: PMEM4020AND

1.2 Features

I 600 mW total power dissipation

I High current capability up to 2 A

I Reduces printed-circuit board area required

I Reduces pick and place costs

I Small plastic SMD package

I Transistor

N Low collector-emitter saturation voltage

I Diode

N Ultra high-speed switching

N Very low forward voltage

N Guard ring protected

1.3 Applications

I DC-to-DC converters

I Inductive load drivers

I General purpose load drivers

I Reverse polarity protection circuits

I MOSFET drivers

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

PNP transistor

V_CEOcollector-emitter voltage

I_Ccollector current (DC)

open base

-

−40

−2

V

A

[1]

continuous;

T_s≤ 55 °C

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

Table 1.

Symbol

Schottky barrier rectiﬁer

Quick reference data …continued

Parameter Conditions

Min

Typ

Max

Unit

V_R

I_F

continuous reverse voltage

continuous forward current

-

40

1

V

A

[1] Soldering point of collector or cathode tab.

2. Pinning information

Table 2.

Discrete pinning

1

Description

emitter

Simpliﬁed outline

Symbol

6

5

4

2

not connected

cathode

anode

4

5

3

6

3

4

1

2

3

sym040

5

base

6

collector

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PMEM4020APD

SC-74

plastic surface mounted package; 6 leads

SOT457

4. Marking

Table 4.

Marking

Type number

PMEM4020APD

Marking code

D3

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

PNP transistor

V_CBO

V_CEO

V_EBO

collector-base voltage

open emitter

open base

-

−40

−5

V

collector-emitter voltage

emitter-base voltage

open collector

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

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PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

continuous

Min

Max

−0.75

−1

Unit

A

[1]

[2]

[3]

[4]

I_C

collector current (DC)

-

A

−1.3

−2

A

continuous;

A

T_s≤ 55 °C

I_CM

I_BM

P_tot

peak collector current

peak base current

-

−3

A

−1

A

[1]

[2]

[3]

[4]

total power dissipation

T

_amb≤ 25 °C

295

400

500

1000

150

mW

°C

T_s≤ 55 °C

T_j

junction temperature

Schottky barrier rectiﬁer

V_R

I_F

continuous reverse voltage

-

40

1

V

A

continuous forward voltage

I_FRM

repetitive peak forward

current

t_p≤ 1 ms; δ ≤ 0.5

3.5

I_FSM

P_tot

non-repetitive peak forward t = 8 ms; square

-

10

A

current

wave

[1]

[2]

[3]

[4]

[2]

total power dissipation

T

_amb≤ 25 °C

-

295

400

500

1000

150

mW

°C

_amb≤ 25 °C

T_s≤ 55 °C

T_j

junction temperature

Combined device

[2]

P_tot

total power dissipation

T_amb≤ 25 °C

-

600

mW

°C

T_stg

T_amb

storage temperature

ambient temperature

−65

+150

°C

[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

[2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm²mounting pad for both

collector and cathode.

[3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.

[4] Soldering point of collector or cathode tab.

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

3 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

6. Thermal characteristics

Table 6.

Thermal characteristics^[1]

Symbol Parameter

Single device

Conditions

Min

Typ

Max

Unit

[2]

R_th(j-s)

thermal resistance from

junction to soldering point

in free air

-

95

K/W

[3]

[4]

[5]

R_th(j-a)

thermal resistance from

junction to ambient

-

250

315

425

K/W

Combined device

R_th(j-a)thermal resistance from

junction to ambient

[3]

in free air

-

208

K/W

[1] For Schottky barrier rectiﬁers thermal run-away has to be considered, as in some applications the reverse

power losses P_Rare a signiﬁcant part of the total power losses. Nomograms for determining the reverse

power losses P_Rand I_F(AV)rating will be available on request.

[2] Soldering point of collector or cathode tab.

[3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.

[4] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm²mounting pad for both

collector and cathode tab.

[5] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

4 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

7. Characteristics

Table 7.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed

Symbol Parameter Conditions

PNP transistor

Min

Typ

Max

Unit

I_CBO

collector-base cut-off V_CB= −40 V; I_E= 0 A

-

−100

−50

nA

current

V_CB= −40 V; I_E= 0 A;

µA

T_j= 150 °C

I_CEO

I_EBO

h_FE

collector-emitter

cut-off current

V_CE= −30 V; I_B= 0 A

V_EB= −5 V; I_C= 0 A

-

−100

nA

emitter-base cut-off

current

DC current gain

V_CE= −5 V; I_C= −1 mA

V_CE= −5 V; I_C= −100 mA

V_CE= −5 V; I_C= −500 mA

V_CE= −5 V; I_C= −1 A

300

-

300

-

250

-

900

-

160

-

[1]

V_CE= −5 V; I_C= −2 A

50

-

V_CEsat

collector-emitter

saturation voltage

I_C= −100 mA; I_B= −1 mA

I_C= −500 mA; I_B= −50 mA

I_C= −1 A; I_B= −100 mA

I_C= −2 A; I_B= −200 mA

I_C= −1 A; I_B= −100 mA

-

−120

−145

−260

−530

280

mV

mΩ

-

[1]

R_CEsat

V_BEsat

V_BEon

f_T

equivalent

on-resistance

-

180

base-emitter

saturation voltage

I_C= −1 A; I_B= −100 mA

V_CE= −5 V; I_C= −1 A

-

−1.1

−1.0

-

V

base-emitter turn-on

voltage

-

V

transition frequency

V_CE= −10 V; I_C= −50 mA;

f = 100 MHz

150

-

MHz

pF

C_c

collector capacitance V_CB= −10 V; I_E= i_e= 0 A;

10

f = 1 MHz

Schottky barrier rectiﬁer

V_F

continuous forward

voltage

see Figure 1

I_F= 0.1 mA

I_F= 1 mA

[1]

-

95

130

210

270

350

640

mV

155

220

295

540

I_F= 10 mA

I_F= 100 mA

I_F= 1000 mA

see Figure 2

V_R= 10 V

I_R

reverse current

[1]

-

7

20

µA

pF

V_R= 40 V

30

43

100

48

C_d

diode capacitance

V_R= 1 V; f = 1 MHz;

see Figure 3

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

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PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

mdb670

5

4

3

2

mdb669

10

3

10

I

R

I

F

(µA)

(1)

(mA)

10

2

10

(2)

(3)

(1)

(2)

(3)

10

1

10

1

−1

10

0

10

20

30

40

0

0.2

0.4

0.6

V

(V)

R

V

(V)

F

Schottky barrier rectiﬁer

(1) T_amb= 150 °C

(2) T_amb= 85 °C

(3) T_amb= 25 °C

(1) T_amb= 150 °C

(2) T_amb= 85 °C

(3) T_amb= 25 °C

Fig 1. Forward current as a function of forward

voltage; typical values

Fig 2. Reverse current as a function of reverse

voltage; typical values

mhc088

mdb671

1200

100

h

FE

C

d

(pF)

80

1000

(1)

800

60

40

20

0

600

(2)

400

(3)

200

0

−1

2

3

I

4

0

5

10

15

20

−10

−1

−10

(mA)

V

(V)

R

C

Schottky barrier rectiﬁer;

PNP transistor; V_CE= −5 V

(1) T_amb= 150 °C

T_amb= 25 °C; f = 1 MHz

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 3. Diode capacitance as a function of reverse

voltage; typical values

Fig 4. DC current gain as a function of collector

current; typical values

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

6 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

mhc089

mhc090

3

2

−10

V

CEsat

(mV)

V

BE

(V)

−10

−1

(1)

(2)

(1)

−10

−1

(2)

(3)

−1

−10

−

1

2

3

4

2

3

4

−10

−1

−10

(mA)

−1

−10

I

(mA)

C

I

C

PNP transistor; V_CE= −5 V

PNP transistor; I_C/I_B= 10

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 5. Base-emitter voltage as a function of collector

current; typical values

Fig 6. Collector-emitter saturation voltage as a

function of collector current; typical values

mhc092

mhc091

2

300

10

f

T

(MHz)

R

CEsat

250

(Ω)

200

150

100

50

10

1

(1)

(2)

(3)

−1

0

10

−1

2

3

4

0

−200

−400

−600

−800

−1000

(mA)

C

−10

−1

−10

(mA)

I

C

PNP transistor; I_C/I_B= 10

PNP transistor; V_CE= −10 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 7. Equivalent on-resistance as a function of

collector current; typical values

Fig 8. Transition frequency as a function of collector

current

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

7 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

8. Application information

V

CC

V

OUT

IN

CONTROLLER

mgu867

mgu866

Fig 9. DC-to-DC converter

Fig 10. Inductive load driver (relays, motors and

buzzers) with free-wheeling diode

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

8 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

9. Package outline

Plastic surface-mounted package (TSOP6); 6 leads

SOT457

D

B

E

A

X

y

H

v

M

A

E

6

5

4

Q

pin 1

index

A

1

c

1

2

3

L

p

e

b

p

w

M B

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

b

c

D

E

e

H

L

Q

v

w

y

p

1

p

E

0.1

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

mm

0.95

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-11-07

06-03-16

SOT457

SC-74

Fig 11. Package outline SOT457 (SC-74)

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

9 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number

Package

Description

Packing quantity

3000

-115

-125

10000

-135

PMEM4020APD

SOT457

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-165

[1] For further information and the availability of packing methods, see Section 13.

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

10 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

11. Revision history

Table 9.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PMEM4020APD_2

Modiﬁcations:

20090831

Product data sheet

-

PMEM4020APD_1

• This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical

content.

• Table 2 “Discrete pinning”: amended

• Figure 11 “Package outline SOT457 (SC-74)”: updated

PMEM4020APD_1

20041004

Product data sheet

-

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

11 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PMEM4020APD_2

Product data sheet

Rev. 02 — 31 August 2009

12 of 13

PMEM4020APD

NXP Semiconductors

PNP transistor/Schottky rectiﬁer module

14. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Application information. . . . . . . . . . . . . . . . . . . 8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing information. . . . . . . . . . . . . . . . . . . . . 10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

3

4

5

6

7

8

9

10

11

12

Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.1

12.2

12.3

12.4

13

14

Contact information. . . . . . . . . . . . . . . . . . . . . 12

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 31 August 2009

Document identifier: PMEM4020APD_2


型号：	PMEM4020APD,115
厂家：	NXP
描述：	1300mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, SOT-457, 6 PIN 开关光电二极管晶体管
文件：	总13页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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