PMEM4020APD,135 [NXP]
1300mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, SOT-457, 6 PIN;
| 型号： | PMEM4020APD,135 |
| 厂家： | 
NXP |
| 描述： | 1300mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, SOT-457, 6 PIN |
| 文件： | 总13页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEM4020APD
PNP transistor/Schottky rectifier module
Rev. 01 — 4 October 2004
Product data sheet
1. Product profile
1.1 General description
Combination of a PNP transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package. NPN complement: PMEM4020AND.
1.2 Features
■ 600 mW total power dissipation
■ High current capability up to 2 A
■ Reduces printed-circuit board area required
■ Reduces pick and place costs
■ Small plastic SMD package
■ Transistor
◆ Low collector-emitter saturation voltage.
■ Diode
◆ Ultra high-speed switching
◆ Very low forward voltage
◆ Guard ring protected.
1.3 Applications
■ DC-to-DC converters
■ Inductive load drivers
■ General purpose load drivers
■ Reverse polarity protection circuits
■ MOSFET drivers.
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
PNP transistor
VCEO collector-emitter voltage
IC collector current (DC)
open base
-
-
-
-
−40
−2
V
A
[1]
continuous;
Ts ≤ 55 °C
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
Table 1:
Symbol
Quick reference data …continued
Parameter Conditions
Min
Typ
Max
Unit
Schottky barrier rectifier
VR
IF
continuous reverse voltage
continuous forward current
-
-
-
-
40
1
V
A
[1] Soldering point of collector or cathode tab.
2. Pinning information
Table 2:
Discrete pinning
Pin
1
Description
emitter
Simplified outline
Symbol
6
5
4
2
not connected
cathode
anode
4
5
3
6
3
4
1
sym040
5
base
1
2
3
6
collector
SOT457
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PMEM4020APD
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking
Type number
PMEM4020APD
Marking code
D3
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PNP transistor
VCBO
VCEO
VEBO
collector-base voltage
open emitter
open base
-
-
-
−40
−40
−5
V
V
V
collector-emitter voltage
emitter-base voltage
open collector
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
2 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
continuous
continuous
continuous
Min
Max
−0.75
−1
Unit
A
[1]
[2]
[3]
[4]
IC
collector current (DC)
-
-
-
-
A
−1.3
−2
A
continuous;
A
Ts ≤ 55 °C
ICM
IBM
Ptot
peak collector current
peak base current
-
-
-
-
-
-
-
−3
A
−1
A
[1]
[2]
[3]
[4]
total power dissipation
T
T
T
amb ≤ 25 °C
amb ≤ 25 °C
amb ≤ 25 °C
295
400
500
1000
150
mW
mW
mW
mW
°C
Ts ≤ 55 °C
Tj
junction temperature
Schottky barrier rectifier
VR
IF
continuous reverse voltage
-
-
-
40
1
V
A
A
continuous forward voltage
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ ≤ 0.5
3.5
IFSM
Ptot
non-repetitive peak forward t = 8 ms; square
-
10
A
current
wave
[1]
[2]
[3]
[4]
[2]
total power dissipation
T
T
T
amb ≤ 25 °C
-
-
-
-
-
295
400
500
1000
150
mW
mW
mW
mW
°C
amb ≤ 25 °C
amb ≤ 25 °C
Ts ≤ 55 °C
Tj
junction temperature
Combined device
[2]
[2]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
600
mW
°C
Tstg
Tamb
storage temperature
ambient temperature
−65
−65
+150
+150
°C
[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both
collector and cathode.
[3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4] Soldering point of collector or cathode tab.
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
3 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
6. Thermal characteristics
Table 6:
Thermal characteristics[1]
Symbol Parameter
Single device
Conditions
Min
Typ
Max
Unit
[2]
Rth(j-s)
thermal resistance from
junction to soldering point
in free air
in free air
-
-
95
K/W
[3]
[4]
[5]
Rth(j-a)
thermal resistance from
junction to ambient
-
-
-
-
-
-
250
315
425
K/W
K/W
K/W
Combined device
Rth(j-a) thermal resistance from
junction to ambient
[3]
in free air
-
-
208
K/W
[1] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Soldering point of collector or cathode tab.
[3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both
collector and cathode tab.
[5] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
4 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
PNP transistor
Min
Typ
Max
Unit
ICBO
collector-base cut-off VCB = −40 V; IE = 0 A
-
-
-
-
−100
−50
nA
current
VCB = −40 V; IE = 0 A;
µA
Tj = 150 °C
ICEO
IEBO
hFE
collector-emitter
cut-off current
VCE = −30 V; IB = 0 A
VEB = −5 V; IC = 0 A
-
-
-
-
−100
−100
nA
nA
emitter-base cut-off
current
DC current gain
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −100 mA
VCE = −5 V; IC = −500 mA
VCE = −5 V; IC = −1 A
300
-
-
300
-
-
250
-
900
-
160
-
[1]
VCE = −5 V; IC = −2 A
50
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −2 A; IB = −200 mA
IC = −1 A; IB = −100 mA
-
−120
−145
−260
−530
280
mV
mV
mV
mV
mΩ
-
-
-
-
-
-
[1]
[1]
[1]
RCEsat
VBEsat
VBEon
fT
equivalent
on-resistance
-
180
base-emitter
saturation voltage
IC = −1 A; IB = −100 mA
VCE = −5 V; IC = −1 A
-
-
-
-
-
−1.1
−1.0
-
V
base-emitter turn-on
voltage
-
V
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
150
-
MHz
pF
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
10
f = 1 MHz
Schottky barrier rectifier
VF
continuous forward
voltage
see Figure 1
IF = 0.1 mA
IF = 1 mA
[1]
[1]
[1]
[1]
[1]
-
-
-
-
-
95
130
210
270
350
640
mV
mV
mV
mV
mV
155
220
295
540
IF = 10 mA
IF = 100 mA
IF = 1000 mA
see Figure 2
VR = 10 V
IR
reverse current
[1]
[1]
-
-
-
7
20
µA
µA
pF
VR = 40 V
30
43
100
48
Cd
diode capacitance
VR = 1 V; f = 1 MHz;
see Figure 3
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
5 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
mdb670
5
4
3
2
mdb669
10
3
10
I
R
I
F
(µA)
(1)
(mA)
10
2
10
10
10
(2)
(3)
(1)
(2)
(3)
10
1
10
1
−1
10
0
10
20
30
40
0
0.2
0.4
0.6
V
(V)
R
V
(V)
F
Schottky barrier rectifier.
Schottky barrier rectifier.
(1) Tamb = 150 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig 1. Forward current as a function of forward
voltage; typical values.
Fig 2. Reverse current as a function of reverse
voltage; typical values.
mhc088
mdb671
1200
100
h
FE
C
d
(pF)
80
1000
(1)
800
60
40
20
0
600
(2)
400
(3)
200
0
−1
2
3
I
4
0
5
10
15
20
−10
−1
−10
−10
−10
−10
(mA)
V
(V)
R
C
Schottky barrier rectifier;
PNP transistor; VCE = −5 V.
(1) Tamb = 150 °C.
Tamb = 25 °C; f = 1 MHz.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 3. Diode capacitance as a function of reverse
voltage; typical values.
Fig 4. DC current gain as a function of collector
current; typical values.
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
6 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
mhc089
mhc090
3
2
−10
−10
V
CEsat
(mV)
V
BE
(V)
−10
−1
(1)
(2)
(1)
−10
−1
(2)
(3)
(3)
−1
−10
−
1
2
3
4
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
I
(mA)
C
I
C
PNP transistor; VCE = −5 V.
PNP transistor; IC/IB = 10.
(1) Tamb = 150 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 5. Base-emitter voltage as a function of collector
current; typical values.
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values.
mhc092
mhc091
2
300
10
f
T
(MHz)
R
CEsat
250
(Ω)
200
150
100
50
10
1
(1)
(2)
(3)
−1
0
10
−1
2
3
4
0
−200
−400
−600
−800
−1000
(mA)
C
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
PNP transistor; IC/IB = 10.
PNP transistor; VCE = −10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 7. Equivalent on-resistance as a function of
collector current; typical values.
Fig 8. Transition frequency as a function of collector
current.
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
7 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
8. Application information
V
CC
V
V
OUT
IN
IN
CONTROLLER
mgu866
mgu867
Fig 9. DC-to-DC converter.
Fig 10. Inductive load driver (relays, motors and
buzzers) with free-wheeling diode.
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
8 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
9. Package outline
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-74
97-02-28
01-05-04
SOT457
Fig 11. Package outline SOT457 (SC-74).
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
9 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
PMEM4020APD
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 15.S
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
10 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
11. Revision history
Table 9:
Revision history
Document ID
Release date Data sheet status
20041004 Product data sheet
Change notice Order number
9397 750 13707
Supersedes
PMEM4020APD_1
-
-
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
11 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13707
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
12 of 13
PMEM4020APD
Philips Semiconductors
PNP transistor/Schottky rectifier module
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
14
15
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 4 October 2004
Document order number: 9397 750 13707
Published in The Netherlands
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