PSS8550C_技术文档

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

PSS8550

PNP medium power 25 V transistor

Product speciﬁcation

2004 Aug 10

Supersedes data of 2002 Nov 19

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

FEATURES

QUICK REFERENCE DATA

• High total power dissipation

• High current capability.

SYMBOL

PARAMETER

collector-emitter voltage −25

collector current (DC) −1.5

MAX.

UNIT

V_CEO

I_C

V

A

APPLICATIONS

• Medium power switching and muting

• Amplification

PINNING

DESCRIPTION

• Portable radio output amplifier (class-B, push-pull).

1

2

3

collector

base

DESCRIPTION

emitter

PNP transistor in a SOT54 (TO-92) plastic package.

NPN complement: PSS8050.

1

handbook, halfpage

2

3

MARKING

TYPE NUMBER

PSS8550C

MARKING CODE

S8550C

S8550D

MSB033

Fig.1 Simplified outline (SOT54).

PSS8550D

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

−40

UNIT

−

V

A

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

open base

−25

−6

open collector

−1.5

−2

I_CM

I_B

−300

−1

mA

A

I_BM

peak base current

P_tot

total power dissipation

T_amb≤ 25 °C; note 1

T_amb≤ 25 °C; note 2

T_amb≤ 25 °C; note 3

850

900

1

mW

W

T_stg

T_j

storage temperature

−65

−

+150

150

+150

°C

junction temperature

°C

T_amb

operating ambient temperature

−65

°C

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed

conditions: pulse width t_p≤ 1 s; duty cycle δ ≤ 0.75%.

2004 Aug 10

2

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

in free air; note 1

VALUE UNIT

R_{th j-a}

thermal resistance from junction to ambient

147

139

125

K/W

in free air; note 2

in free air; note 3

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

Operated under pulsed conditions: pulse width t_p≤ 1 s; duty cycle δ ≤ 0.75%.

CHARACTERISTICS

T_amb= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

V_CB= −35 V; I_E= 0

MIN.

TYP. MAX. UNIT

I_CBO

collector-base cut-off current

−

−100

−50

nA

V_CB= −35 V; I_E= 0;

T_amb= 150 °C

−

µA

I_CEO

I_EBO

h_FE

collector-emitter cut-off current

emitter-base cut-off current

DC current gain

V_CE= −25 V; I_B= 0

−

−100

−

nA

V_EB= −6 V; I_C= 0

−

I_C= −5 mA; V_CE= −1 V

I_C= −800 mA; V_CE= −1 V

I_C= −100 mA; V_CE= −1 V

45

40

−

DC current gain

PSS8550C

120

160

−

200

300

−500

−1.2

−1

PSS8550D

−

V_CEsat

V_BEsat

V_BEon

f_T

collector-emitter saturation voltage I_C= −800 mA; I_B= −80 mA

−190

mV

V

base-emitter saturation voltage

base-emitter turn-on voltage

transition frequency

I_C= −800 mA; I_B= −80 mA

I_C= −10 mA; V_CE= −1 V

−

V

I_C= −50 mA; V_CE= −10 V;

100

−

MHz

f = 100 MHz

C_c

collector capacitance

V_CB= 10 V; I_E= i_e= 0; f = 1 MHz

−

12

pF

2004 Aug 10

3

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

MLD958

MLD959

400

−1200

handbook, halfpage

V

BE

h

FE

(mV)

−1000

300

(1)

(2)

−800

−600

−400

−200

200

(2)

100

(3)

0

−10

−1

2

3

I

4

−1

2

3

4

−1

−10

(mA)

−10

−1

−10

(mA)

I

C

PSS8550C V_CE= −1 V.

(1) _amb= 150 °C.

PSS8550C V_CE= −1 V.

(1) _amb= −55 °C.

T

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

MLD960

MLD962

3

−1200

−10

handbook, halfpage

V

BEsat

(mV)

−1000

V

(1)

CEsat

(mV)

(2)

−800

2

−10

(3)

−600

(1)

(2)

−400

(3)

−10

−200

−1

2

3

I

4

−1

2

3

I

4

−1

−10

− 10

(mA)

−10

−1

−10

(mA)

C

PSS8550C I_C/I_B= 10.

(1) _amb= 150 °C.

PSS8550C I_C/I_B= 10.

(1) _amb= −55 °C.

T

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

2004 Aug 10

4

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

MLD963

MLD961

3

10

−2.5

handbook, halfpage

I

C

R

CEsat

(Ω)

(A)

(3) (2) (1)

−2

2

10

(4)

(5)

(6)

(7)

−1.5

−1

(8)

10

(9)

(10)

1

(1)

−0.5

(2)

(3)

0

−10

0

−1

2

3

4

−0.5

−1

−1.5

−2

−1

−10

(mA)

V

(V)

I

CE

C

PSS8550C

(4) I_B= −70 mA.

(5) _B= −60 mA.

(8) I_B= −30 mA.

(9) _B= −20 mA.

(10) I_B= −10 mA.

PSS8550C I_C/I_B= 10.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(1)

I_B= −100 mA.

I

(2) I_B= −90 mA.

(3) I_B= −80 mA.

(6) I_B= −50 mA.

(7) I_B= −40 mA.

Fig.6 Equivalent on-resistance as a function of

collector current; typical values.

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

2004 Aug 10

5

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

MLD964

MLD965

400

−1200

handbook, halfpage

V

(1)

BE

h

FE

(mV)

−1000

300

(1)

(2)

−800

−600

−400

−200

(2)

200

(3)

100

(3)

0

−10

−1

2

3

I

4

−1

2

3

4

−1

−10

(mA)

−10

−1

−10

(mA)

I

C

PSS8550D V_CE= −1 V.

(1) _amb= 150 °C.

PSS8550D V_CE= −1 V.

(1) _amb= −55 °C.

T

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.8 DC current gain as a function of collector

current; typical values.

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

MLD966

MLD968

3

−1200

−10

handbook, halfpage

V

BEsat

(mV)

−1000

V

(1)

CEsat

(mV)

(2)

−800

2

−10

(3)

−600

(1)

(2)

−400

(3)

−10

−200

−1

2

3

I

4

−1

2

3

I

4

−1

−10

− 10

(mA)

−10

−1

−10

(mA)

C

PSS8550D I_C/I_B= 10.

(1) _amb= −55 °C.

PSS8550D I_C/I_B= 10.

(1) _amb= 150 °C.

T

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

Fig.11 Base-emitter saturation voltage as a

function of collector current; typical values.

2004 Aug 10

6

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

MLD969

MLD967

3

10

−2.5

handbook, halfpage

I

C

R

CEsat

(Ω)

(A)

(3) (2) (1)

−2

2

10

(4)

(5)

(6)

(7)

−1.5

−1

(8)

10

(9)

(10)

1

(1)

−0.5

(2)

(3)

0

−10

0

−1

2

3

4

−0.5

−1

−1.5

−2

−1

−10

(mA)

V

(V)

I

CE

C

PSS8550D

(4) I_B= −70 mA.

(5) _B= −60 mA.

(8) I_B= −30 mA.

(9) _B= −20 mA.

(10) I_B= −10 mA.

PSS8550D I_C/I_B= 10.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(1)

I_B= −100 mA.

I

(2) I_B= −90 mA.

(3) I_B= −80 mA.

(6) I_B= −50 mA.

(7) I_B= −40 mA.

Fig.12 Equivalent on-resistance as a function of

collector current; typical values.

Fig.13 Collector current as a function of

collector-emitter voltage; typical values.

2004 Aug 10

7

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

c

E

d

A

L

b

1

2

e

1

e

D

3

b

1

L

1

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

L

1

UNIT

A

b

c

D

d

E

e

L

1

max.

5.2

5.0

0.48

0.40

0.66

0.55

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

mm

2.54

1.27

2.5

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

97-02-28

04-06-28

SOT54

TO-92

SC-43A

2004 Aug 10

8

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

DATA SHEET STATUS

DATA SHEET

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾⁽³⁾

LEVEL

DEFINITION

I

Objective data

Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II

Preliminary data Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

Application information

Applications that are

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

copyright, or mask work right to these products, and

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2004 Aug 10

9

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA76

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R75/02/pp10

Date of release: 2004 Aug 10

Document order number: 9397 750 13683


型号：	PSS8550C
厂家：	NXP
描述：	PNP medium power 25 V transistor PNP中功率25 V晶体管晶体晶体管
文件：	总10页 (文件大小：104K)
中文：	中文翻译
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PSS8550C [NXP]

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