PUMD16 [NXP]

NPN/PNP resistor-equipped transistors; NPN / PNP电阻配备晶体管
PUMD16
型号: PUMD16
厂家: NXP    NXP
描述:

NPN/PNP resistor-equipped transistors
NPN / PNP电阻配备晶体管

晶体 小信号双极晶体管 开关 光电二极管 PC
文件: 总7页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PUMD16  
NPN/PNP resistor-equipped  
transistors; R1 = 22 k, R2 = 47 kΩ  
Product specification  
2003 Oct 22  
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 47 kΩ  
PUMD16  
FEATURES  
QUICK REFERENCE DATA  
Built-in bias resistors  
SYMBOL  
PARAMETER  
TYP. MAX. UNIT  
Simplified circuit design  
VCEO  
collector-emitter  
voltage  
50  
V
Reduction of component count  
Reduced pick and place costs.  
IO  
output current (DC)  
NPN  
100  
mA  
TR1  
TR2  
R1  
PNP  
APPLICATIONS  
bias resistor  
bias resistor  
22  
47  
kΩ  
kΩ  
Low current peripheral driver  
R2  
Replacement of general purpose transistors in digital  
applications  
Control of IC inputs.  
DESCRIPTION  
NPN/PNP resistor-equipped transistors (see “Simplified  
outline, symbol and pinning” for package details).  
PRODUCT OVERVIEW  
PACKAGE  
TYPE  
PNP/PNP  
COMPLEMENT  
NPN/NPN  
COMPLEMENT  
MARKING CODE  
D1*(1)  
NUMBER  
PUMD16  
Note  
PHILIPS  
EIAJ  
SOT363  
SC-88  
PUMB16  
PUMH16  
1. * = p: Made in Hong Kong.  
* = t: Made in Malaysia.  
* = W: Made in China.  
SIMPLIFIED OUTLINE, SYMBOL AND PINNING  
PINNING  
TYPE NUMBER  
SIMPLIFIED OUTLINE AND SYMBOL  
PIN  
DESCRIPTION  
PUMD16  
1
2
3
4
5
6
emitter TR1  
base TR1  
6
5
4
6
5
4
collector TR2  
emitter TR2  
base TR2  
R1 R2  
TR2  
TR1  
R2 R1  
collector TR1  
1
Top view  
2
3
1
2
3
MAM468  
2003 Oct 22  
2
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 47 kΩ  
PUMD16  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
VERSION  
PUMD16  
plastic surface mounted package; 6 leads  
SOT363  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
Per transistor; for the PNP transistor with negative polarity  
MIN.  
MAX.  
UNIT  
VCBO  
VCEO  
VEBO  
VI  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage TR1  
positive  
open emitter  
open base  
50  
V
V
V
50  
6
open collector  
+40  
V
V
negative  
7  
VI  
input voltage TR2  
positive  
+7  
V
V
negative  
40  
100  
100  
200  
+150  
150  
+150  
IO  
output current (DC)  
peak collector current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
mA  
mA  
mW  
°C  
ICM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
°C  
Tamb  
65  
°C  
Per device  
Ptot  
total power dissipation  
Tamb 25 °C; note 1  
300  
mW  
Note  
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Per transistor  
Rth j-a  
thermal resistance from junction to ambient  
T
amb 25 °C; note 1  
amb 25 °C; note 1  
625  
416  
K/W  
K/W  
Per device  
Rth j-a  
thermal resistance from junction to ambient  
T
Note  
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.  
2003 Oct 22  
3
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 47 kΩ  
PUMD16  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
Per transistor; for the PNP transistor with negative polarity  
ICBO  
ICEO  
collector-base cut-off current  
collector-emitter cut-off current  
VCB = 50 V; IE = 0  
VCE = 30 V; IB = 0  
100  
1
nA  
µA  
µA  
µA  
VCE = 30 V; IB = 0; Tj = 150 °C  
50  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
VEB = 5 V; IC = 0  
120  
VCE = 5 V; IC = 5 mA  
80  
VCEsat  
Vi(off)  
Vi(on)  
R1  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
150  
0.5  
mV  
V
input-off voltage  
input-on voltage  
input resistor  
IC = 100 µA; VCE = 5 V  
0.8  
1.1  
22  
IC = 2 mA; VCE = 0.3 V  
2
V
15.4  
28.6  
kΩ  
R2  
-------  
R1  
resistor ratio  
1.7  
2.1  
2.6  
Cc  
collector capacitance  
TR1 (NPN)  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
2.5  
3
pF  
pF  
TR2 (PNP)  
2003 Oct 22  
4
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 47 kΩ  
PUMD16  
PACKAGE OUTLINES  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2003 Oct 22  
5
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 47 kΩ  
PUMD16  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2003 Oct 22  
6
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/01/pp7  
Date of release: 2003 Oct 22  
Document order number: 9397 750 11865  

相关型号:

PUMD16,115

PEMD16; PUMD16 - NPN/PNP resistor-equipped transistors; R1 = 22 k Ohm, R2 = 47 k Ohm TSSOP 6-Pin
NXP

PUMD16-Q

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩProduction
NEXPERIA

PUMD16_05

NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = 47 kW
NXP

PUMD17

Low VCEsat (BISS) transistors
NXP

PUMD17

NPN/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhmProduction
NEXPERIA

PUMD17,115

PEMD17; PUMD17 - NPN/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm TSSOP 6-Pin
NXP

PUMD17/T1

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

PUMD17/T2

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

PUMD18

Low VCEsat (BISS) transistors
NXP

PUMD18

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩProduction
NEXPERIA

PUMD18,115

PEMD18; PUMD18 - NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ TSSOP 6-Pin
NXP

PUMD19

NPN/PNP resistor-equipped transistors
NXP