TDA8510J/N2 [NXP]
IC 26 W, 1 CHANNEL, AUDIO AMPLIFIER, PZIP17, POWER, PLASTIC, SOT-243-1, DIL-BENT-SIL, 17 PIN, Audio/Video Amplifier;型号: | TDA8510J/N2 |
厂家: | NXP |
描述: | IC 26 W, 1 CHANNEL, AUDIO AMPLIFIER, PZIP17, POWER, PLASTIC, SOT-243-1, DIL-BENT-SIL, 17 PIN, Audio/Video Amplifier 放大器 商用集成电路 |
文件: | 总18页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8510J
26 W BTL and 2 × 13 W SE power
amplifiers
Preliminary specification
1999 Dec 14
Supersedes data of 1999 Jun 14
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
FEATURES
• Electrostatic discharge protection
• No switch-on/switch-off plop
• Flexible leads
• Requires very few external components
• High output power
• Low thermal resistance
• Low output offset voltage (BTL channel)
• Fixed gain
• Identical inputs (inverting and non-inverting).
• Diagnostic facility (distortion, short-circuit and
temperature detection)
GENERAL DESCRIPTION
• Good ripple rejection
The TDA8510J is an integrated class-B output amplifier in
a 17-lead single-in-line (SIL) power package. It contains a
26 W Bridge-Tied Load (BTL) amplifier and 2 × 13 W
Single-Ended (SE) amplifiers.
• Mode select switch (operating, mute and standby)
• AC and DC short-circuit safe to ground and to VP
• Low power dissipation in any short-circuit condition
• Thermally protected
The device is primarily developed for multi-media
applications and active speaker systems (stereo with
subwoofer).
• Reverse polarity safe
QUICK REFERENCE DATA
SYMBOL
General
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
6
−
−
−
15
18
V
A
IORM
Iq(tot)
Istb
repetitive peak output current
total quiescent current
standby current
−
4
80
0.1
−
mA
100
µA
BTL channel
Po
output power
RL = 4 Ω; THD = 10%
Rs = 0 Ω
−
26
−
−
W
SVRR
Vn(o)
Zi
supply voltage ripple rejection
noise output voltage
input impedance
46
−
−
dB
µV
kΩ
mV
70
−
−
25
−
−
∆VOO
DC output offset voltage
−
150
Single-ended channels
Po
output power
THD = 10%
RL = 4 Ω
−
7
−
−
−
−
−
W
RL = 2 Ω
−
13
−
W
SVRR
Vn(o)
Zi
supply voltage ripple rejection
noise output voltage
input impedance
46
−
dB
µV
kΩ
Rs = 0 Ω
50
−
50
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8510J
DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
1999 Dec 14
2
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
BLOCK DIAGRAM
V
V
P1
P2
5
13
non-inverting
input 1
1
mute switch
C
m
60
kΩ
TDA8510J
6
VA
output 1
2
kΩ
power stage
18 kΩ
non-inverting
input 2
3
mute switch
C
m
60
kΩ
8
VA
output 2
2
kΩ
power stage
18 kΩ
V
P
mode
select
switch
14
standby
switch
standby
reference
voltage
VA
PROTECTIONS
thermal
short-circuit
mute
switch
15 kΩ
x1
16
diagnostic
output
4
supply voltage
ripple rejection
15 kΩ
mute
reference
voltage
C
mute switch
m
60
kΩ
15
inverting
input 3
10
VA
output 3
2
kΩ
power stage
18 kΩ
non-inverting
input 4
17
mute switch
C
m
60
kΩ
12
VA
output 4
2
kΩ
input
reference
voltage
power stage
18 kΩ
2
9
7
11
GND2
MGL428
GND1
ground
(signal)
not connected
power ground (substrate)
Fig.1 Block diagram.
3
1999 Dec 14
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
PINNING
SYMBOL PIN
DESCRIPTION
non-inverting input 1
−INV1
SGND
−INV2
RR
1
2
3
4
5
6
7
8
9
−INV1
1
2
3
4
5
6
7
8
9
signal ground
SGND
non-inverting input 2
supply voltage ripple rejection
supply voltage 1
output 1
−INV2
VP1
RR
OUT1
GND1
OUT2
n.c.
V
P1
power ground 1
output 2
OUT1
GND1
OUT2
not connected
OUT3
GND2
OUT4
VP2
10 output 3
n.c.
TDA8510J
11 power ground 2
12 output 4
OUT3 10
13 supply voltage 2
14 mode select switch input
15 inverting input 3
16 diagnostic output
17 non-inverting input 4
11
12
GND2
OUT4
MODE
INV3
VDIAG
−INV4
V
13
P2
MODE 14
INV3 15
V
DIAG 16
−INV4 17
MGL427
Fig.2 Pin configuration.
1999 Dec 14
4
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
FUNCTIONAL DESCRIPTION
During this short-circuit condition, pin 16 is LOW for 20 ms
and HIGH for 50 µs (see Fig.5).
The TDA8510J contains four identical amplifiers and can
be used for two Single-Ended (SE) channels (fixed gain
20 dB) and one Bridge-Tied Load (BTL) channel (fixed
gain 26 dB). Special features of the device are:
The power dissipation in any short-circuit condition is very
low.
Mode select switch (pin 14)
• Low standby current (<100 µA)
• Low switching current (low cost supply switch)
• Mute facility.
MGA705
V
handbook, halfpage
O
0
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17). This can be achieved
by:
V
16
V
P
• Microcontroller control
• External timing circuit (see Fig.8).
0
t
Diagnostic output (pin 16)
DYNAMIC DISTORTION DETECTOR (DDD)
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 16
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and thus limit the distortion. The output level of
pin 16 is independent of the number of channels that are
clipping (see Figs 3 and 4).
Fig.3 Distortion detector waveform; BTL channel.
MGA706
V
handbook, halfpage
O
SHORT-CIRCUIT PROTECTION
0
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
20 ms, after removal of the short-circuit. During this
short-circuit condition, pin 16 is continuously LOW.
V
16
V
P
0
t
When a short-circuit across the load of one or more
channels occurs the output stages are switched off for
approximately 20 ms. After that time it is checked during
approximately 50 µs to see whether the short-circuit is still
present. Due to this duty cycle of 50 µs/20 ms the average
current consumption during this short-circuit condition is
very low (approximately 40 mA).
Fig.4 Distortion detector waveform; SE channels.
1999 Dec 14
5
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
current
in
MGL214
output
stage
t
short-circuit over the load
V
16
20 ms
V
P
t
50 µs
Fig.5 Short-circuit waveform.
TEMPERATURE DETECTION
When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW.
OPEN-COLLECTOR OUTPUT
Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
operating
no signal
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
18
20
6
V
V
IOSM
IORM
Vsc
non-repetitive peak output current
repetitive peak output current
AC and DC short-circuit safe voltage
reverse polarity voltage
A
4
A
18
6
V
Vrp
V
Ptot
Tstg
Tamb
Tvj
total power dissipation
60
W
°C
°C
°C
storage temperature
−55
−40
−
+150
+85
operating ambient temperature
virtual junction temperature
150
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
Rth(j-c)
thermal resistance from junction to ambient
in free air
40
K/W
K/W
thermal resistance from junction to case (see Fig.6)
1.3
1999 Dec 14
6
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
virtual junction
output 1 output 2 output 3 output 4
handbook, halfpage
3.0 K/W
3.0 K/W
3.0 K/W
3.0 K/W
0.7 K/W
0.7 K/W
MEA860 - 2
0.2 K/W
case
Fig.6 Equivalent thermal resistance network.
1999 Dec 14
7
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
DC CHARACTERISTICS
VP = 15 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
note 1
note 2
6
−
−
−
15
18
V
Iq(tot)
VO
total quiescent current
DC output voltage
80
6.9
−
160
−
mA
V
∆VOO
DC output offset voltage
150
mV
Mode select switch
VSW(on)
switch-on voltage level
8.5
−
−
V
MUTE CONDITION
Vmute
VO
mute voltage
3.3
−
−
−
−
6.4
2
V
output voltage in mute position
DC output offset voltage
VI(max) = 1 V; f = 1 kHz
note 2
mV
mV
∆VOO
−
150
STANDBY CONDITION
Vstb
Istb
standby voltage
0
−
−
−
2
V
standby current
−
100
40
µA
µA
Isw(on)
switch-on current
12
Diagnostic output (pin 16)
VDIAG
diagnostic output voltage
any short-circuit or clipping −
−
0.6
V
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. Only for BTL channel (V12-10).
1999 Dec 14
8
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
AC CHARACTERISTICS
VP = 15 V; f = 1 kHz; Tamb = 25 °C; measure in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTL channel
Po
output power
note 1
THD = 0.5%
THD = 10%
Po = 1 W
16
20
−
W
22
−
26
−
−
−
W
%
THD
B
total harmonic distortion
power bandwidth
0.06
20 to
15000
25
THD = 0.5%;
−
Hz
Po = −1 dB; with respect to 16 W
at −1 dB; note 2
at −1 dB
fro(l)
low frequency roll-off
high frequency roll-off
closed loop voltage gain
−
−
Hz
fro(h)
Gv
20
25
−
−
kHz
dB
26
27
SVRR
supply voltage ripple rejection note 3
on
48
46
80
25
−
−
−
dB
dB
dB
kΩ
µV
µV
µV
dB
mute
−
−
standby
−
−
Zi
input impedance
30
70
100
60
60
38
−
Vn(o)
noise output voltage
on; Rs = 0 Ω; note 4
on; Rs = 10 kΩ; note 4
mute; notes 4 and 5
Rs = 10 kΩ
−
200
−
−
αcs
channel separation
40
−
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V
16 ≤ 0.6 V; no short-circuit
−
10
−
%
1999 Dec 14
9
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Single-ended channels
Po
output power
note 1
THD = 0.5%
8
10
−
W
THD = 10%
L1 = 4 Ω; note 1
THD = 0.5%
THD = 10%
11
13
−
W
R
−
5.5
7
−
W
−
−
W
THD
fro(l)
total harmonic distortion
low frequency roll-off
high frequency roll-off
closed loop voltage gain
Po = 1 W
−
0.06
25
−
−
%
at −1 dB; note 2
at −1 dB
−
−
Hz
kHz
dB
fro(h)
Gv
20
19
−
20
21
SVRR
supply voltage ripple rejection note 3
on
48
46
80
50
−
−
−
dB
dB
dB
kΩ
µV
µV
µV
dB
dB
mute
−
−
standby
−
−
Zi
input impedance
60
50
70
50
60
−
75
−
Vn(o)
noise output voltage
on; Rs = 0 Ω; note 4
on; Rs = 10 kΩ; note 4
mute; notes 4 and 5
Rs = 10 kΩ
−
100
−
−
αcs
channel separation
channel unbalance
40
−
−
∆Gv
1
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V
16 ≤ 0.6 V; no short-circuit
−
10
−
%
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency of between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi = 0 V).
1999 Dec 14
10
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
TEST AND APPLICATION INFORMATION
V
P
mode
2200
µF
switch
100
nF
10
kΩ
14
16
5
13
TDA8510J
220 nF
1
+
−
input 1
6
8
1000 µF
R
L1
60
kΩ
2 Ω
−
+
220 nF
3
2
input 2
1000 µF
R
60
kΩ
ground (signal)
L1
reference
voltage
2 Ω
4
supply voltage
ripple rejection
100 1/2V
µF
P
9
60
not connected
kΩ
15
−
+
10
470 nF
60
kΩ
inputs
3 and 4
R
L2
4 Ω
−
+
12
17
7
11
MGL429
power ground (substrate)
Fig.7 Application diagram.
11
1999 Dec 14
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
Mode select switch
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during >100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17.
The circuit in Fig.8 slowly ramps up the voltage at the
mode select switch pin when switching on and results in
fast muting when switching off.
V
P
handbook, halfpage
10 kΩ
47 µF
100 Ω
mode
select
switch
100 kΩ
MGA708
Fig.8 Mode select switch circuitry.
1999 Dec 14
12
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
2
v
M
1
17
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.2 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 5.08
0.8
4.3
0.4 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-03-11
97-12-16
SOT243-1
1999 Dec 14
13
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
SOLDERING
The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 14
14
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
NOTES
1999 Dec 14
15
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/03/pp16
Date of release: 1999 Dec 14
Document order number: 9397 750 06653
Go to Philips Semiconductors' home page
Select & Go...
Catalog
& Datasheets
Information as of 2000-08-23
Catalog by Function
Discrete semiconductors
Audio
TDA8510J; 26 W BTL and 2 x 13 W SE power amplifiers
Clocks and Watches
Data communications
Microcontrollers
Peripherals
Standard analog
Video
Subscribe
to eNews
• Description
• Features
• Datasheet
• Products, packages, availability and ordering
• Find similar products
To be kept informed on TDA8510J,
subscribe to eNews.
Wired communications
Wireless communications
Description
Catalog by System
Automotive
Consumer Multimedia
Systems
The TDA8510J is an integrated class-B output amplifier in a 17-lead single-in-line (SIL) power package. It contains a 26 W Bridge-Tied
Load (BTL) amplifier and 2 x 13 W Single-Ended (SE) amplifiers.
Communications
PC/PC-peripherals
The device is primarily developed for multi-media applications and active speaker systems (stereo with subwoofer).
Cross reference
Models
Features
Packages
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Requires very few external components
l High output power
l Low output offset voltage (BTL channel)
l Fixed gain
l Diagnostic facility (distortion, short-circuit and temperature detection)
l Good ripple rejection
l Mode select switch (operating, mute and standby)
l AC and DC short-circuit safe to ground and to VP
Relevant Links
About catalog tree
About search
About this site
Subscribe to eNews
Catalog & Datasheets
Search
l Low power dissipation in any short-circuit condition
l Thermally protected
l Reverse polarity safe
TDA8510J
TDA8510J
l Electrostatic discharge protection
l No switch-on/switch-off plop
l Flexible leads
l Low thermal resistance
l Identical inputs (inverting and non-inverting).
Datasheet
File
size
(kB)
Publication
release date Datasheet status
Page
count
Type nr.
Title
Datasheet
Download
TDA8510J 26 W BTL and 2 x 13 W SE power
amplifiers
14-Dec-99
Preliminary
Specification
16
82
Products, packages, availability and ordering
Partnumber
North American Partnumber Order code (12nc) marking/packing
package device status
buy online
-
TDA8510J/N2
9352 631 33112 Standard Marking * Tube SOT243 Samples available
Please read information about some discontinued variants of this product.
Find similar products:
TDA8510J links to the similar products page containing an overview of products that are similar in function or related to the part
number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and
products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.
相关型号:
©2020 ICPDF网 联系我们和版权申明