TDA8542TS/N1/N,118 [NXP]

TDA8542TS - 2 × 0.7 W BTL audio amplifier SSOP2 20-Pin;
TDA8542TS/N1/N,118
型号: TDA8542TS/N1/N,118
厂家: NXP    NXP
描述:

TDA8542TS - 2 × 0.7 W BTL audio amplifier SSOP2 20-Pin

放大器 光电二极管 商用集成电路
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INTEGRATED CIRCUITS  
DATA SHEET  
TDA8542TS  
2 × 0.7 W BTL audio amplifier  
Product specification  
1998 Mar 25  
Supersedes data of 1997 Nov 17  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
FEATURES  
GENERAL DESCRIPTION  
Flexibility in use  
The TDA8542TS is a two channel audio power amplifier  
for an output power of 2 × 0.7 W with a 16 Ω load at a 5 V  
supply. At a low supply voltage of 3.3 V an output power of  
0.6 W with an 8 Ω load can be obtained. The circuit  
contains two Bridge-Tied Load (BTL) amplifiers with a  
complementary PNP-NPN output stage and standby/mute  
logic. The TDA8542TS is available in a SSOP20 package.  
Few external components  
Low saturation voltage of output stage  
Gain can be fixed with external resistors  
Standby mode controlled by CMOS compatible levels  
Low standby current  
No switch-on/switch-off plops  
APPLICATIONS  
High supply voltage ripple rejection  
Protected against electrostatic discharge  
Portable consumer products  
Personal computers  
Outputs short-circuit safe to ground, VCC and across the  
load  
Motor-driver (servo).  
Thermally protected.  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.2  
TYP.  
MAX.  
18  
UNIT  
VCC  
Iq  
5
V
quiescent current  
standby current  
output power  
VCC = 5 V  
15  
22  
10  
mA  
μA  
W
Istb  
Po  
THD = 10%; RL = 8 Ω; VCC = 3.3 V 0.45  
THD = 10%; RL = 16 Ω; VCC = 5 V 0.6  
0.55  
0.7  
0.15  
W
THD  
total harmonic distortion  
Po = 0.4 W  
%
SVRR  
supply voltage ripple rejection  
50  
dB  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
TDA8542TS  
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm  
SOT266-1  
1998 Mar 25  
2
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
BLOCK DIAGRAM  
V
V
CCL CCR  
20  
11  
18  
17  
OUTL  
INL−  
+
16  
INL+  
R
V
CCL  
R
2
n.c.  
n.c.  
n.c.  
n.c.  
n.c.  
7
9
+
12  
19  
3
20 kΩ  
OUTL+  
20 kΩ  
STANDBY/MUTE LOGIC  
TDA8542TS  
13  
14  
15  
INR−  
INR+  
OUTR−  
+
R
V
CCR  
R
+
8
20 kΩ  
OUTR+  
5
SVR  
20 kΩ  
4
6
MODE  
STANDBY/MUTE LOGIC  
BTL/SE  
1
10  
MBK445  
LGND RGND  
Fig.1 Block diagram.  
3
1998 Mar 25  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
PINNING  
SYMBOL  
LGND  
PIN  
1
DESCRIPTION  
ground, left channel  
n.c.  
2
not connected  
OUTL+  
3
positive loudspeaker terminal, left  
channel  
MODE  
SVR  
4
5
6
operating mode select (standby,  
mute, operating)  
handbook, halfpage  
LGND  
n.c.  
1
2
20 V  
CCL  
half supply voltage, decoupling  
ripple rejection  
19 n.c.  
BTL/SE  
BTL loudspeaker or SE  
headphone operation  
OUTL+  
MODE  
SVR  
3
18 OUTL−  
17 INL−  
16 INL+  
15 INR+  
4
n.c.  
7
8
not connected  
5
OUTR+  
positive loudspeaker terminal,  
right channel  
TDA8542TS  
BTL/SE  
n.c.  
6
n.c.  
9
not connected  
INR−  
OUTR−  
n.c.  
7
14  
13  
12  
11  
RGND  
VCCR  
n.c.  
10 ground, right channel  
11 supply voltage, right channel  
12 not connected  
OUTR+  
n.c.  
8
9
RGND  
V
10  
OUTR−  
13 negative loudspeaker terminal,  
right channel  
CCR  
MBK453  
INR−  
INR+  
INL+  
14 negative input, right channel  
15 positive input, right channel  
16 positive input, left channel  
17 negative input, left channel  
INL−  
OUTL−  
18 negative loudspeaker terminal,  
left channel  
n.c.  
19 not connected  
Fig.2 Pin configuration.  
VCCL  
20 supply voltage, left channel  
FUNCTIONAL DESCRIPTION  
transistor. The total voltage loss is <1 V and with a 5 V  
supply voltage and with a 16 Ω loudspeaker an output  
power of 0.7 W can be delivered.  
The TDA8542TS is a 2 × 0.7 W BTL audio power amplifier  
capable of delivering 2 × 0.7 W output power to a 16 Ω  
load at THD = 10% using a 5 V power supply. Using the  
MODE pin the device can be switched to standby and  
mute condition. The device is protected by an internal  
thermal shutdown protection mechanism. The gain can be  
set within a range from 6 to 30 dB by external feedback  
resistors.  
Mode select pin  
The device is in the standby mode (with a very low current  
consumption) if the voltage at the MODE pin is  
>(VCC 0.5 V), or if this pin is floating. At a MODE voltage  
level of less than 0.5 V the amplifier is fully operational.  
In the range between 1.5 V and VCC 1.5 V the amplifier  
is in mute condition. The mute condition is useful to  
suppress plop noise at the output caused by charging of  
the input capacitor.  
Power amplifier  
The power amplifier is a Bridge-Tied Load (BTL) amplifier  
with a complementary PNP-NPN output stage.  
The voltage loss on the positive supply line is the  
saturation voltage of a PNP power transistor, on the  
negative side the saturation voltage of a NPN power  
1998 Mar 25  
4
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
Headphone connection  
not to ground, but to a voltage level of 12VCC. See Fig.4 for  
the application diagram. In this case the BTL/SE pin must  
be either at a logic LOW level or connected to ground.  
If the BTL/SE pin is at a LOW level, the power amplifier for  
the positive loudspeaker terminal is always in mute  
condition.  
A headphone can be connected to the amplifier using two  
coupling capacitors for each channel. The common  
GND pin of the headphone is connected to the ground of  
the amplifier (see Fig.13). In this case the BTL/SE pin must  
be either at a logic HIGH level or not connected at all.  
The two coupling capacitors can be omitted if it is allowed  
to connect the common GND pin of the headphone jack  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
operating  
MIN.  
0.3  
MAX.  
+18  
UNIT  
VCC  
VI  
supply voltage  
input voltage  
V
0.3  
VCC + 0.3  
1
V
IORM  
Tstg  
Tamb  
Vsc  
repetitive peak output current  
storage temperature  
A
non-operating  
55  
40  
+150  
+85  
°C  
°C  
V
operating ambient temperature  
AC and DC short-circuit safe voltage  
total power dissipation  
10  
Ptot  
1.12  
W
QUALITY SPECIFICATION  
In accordance with “SNW-FQ-611-E”.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
in free air  
110(1)  
K/W  
Note  
1. See Section “Thermal design considerations”.  
Table 1 Maximum ambient temperature at different conditions  
CONTINUOUS SINE WAVE DRIVEN  
VCC  
(V)  
RL  
(Ω)  
Po  
(W)  
Pmax  
(W)  
Tamb(max)  
(°C)  
3.3  
3.3  
5
4
8
2 × 0.65  
2 × 0.55  
2 × 1.2  
1.12  
0.60  
1.33  
0.80  
27(1)  
84  
(1)  
8
5
16  
2 × 0.70  
62  
Note  
1. See Section “Thermal design considerations”.  
1998 Mar 25  
5
 
 
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
DC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
operating  
MIN.  
2.2  
TYP.  
MAX.  
18  
UNIT  
5
V
Iq  
quiescent current  
standby current  
DC output voltage  
RL = ; note 1  
VMODE = VCC  
note 2  
15  
22  
10  
mA  
μA  
V
Istb  
VO  
2.2  
VOUT+ VOUTdifferential output voltage offset  
50  
500  
0.5  
mV  
nA  
V
IIN+, IIN−  
VMODE  
input bias current  
input voltage mode select  
operating  
mute  
0
1.5  
VCC 1.5 V  
standby  
VCC 0.5 −  
VCC  
20  
V
IMODE  
input current mode select  
input voltage BTL/SE pin  
0 < VMODE < VCC  
single-ended  
BTL  
0
2
μA  
V
VBTL/SE  
0.6  
VCC  
100  
V
IBTL/SE  
input current BTL/SE pin  
VBTL/SE = 0  
μA  
Notes  
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal  
to the DC output offset voltage divided by RL.  
2. The DC output voltage with respect to ground is approximately 12VCC  
.
1998 Mar 25  
6
 
 
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
AC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.  
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT  
Po output power at VCC = 5 V  
THD = 10%; RL = 8 Ω  
THD = 10%; RL = 16 Ω  
THD = 0.5%; RL = 8 Ω  
THD = 0.5%; RL = 16 Ω  
at VCC = 3.3 V  
1.2  
W
0.70  
0.9  
W
W
W
0.5  
THD = 10%; RL = 4 Ω  
THD = 10%; RL = 8 Ω  
THD = 0.5%; RL = 4 Ω  
THD = 0.5%; RL = 8 Ω  
Po = 0.4 W  
6
0.65  
0.55  
0.45  
0.38  
0.15  
W
W
W
W
THD  
Gv(cl)  
Zi(dif)  
Vn(o)  
total harmonic distortion  
closed-loop voltage gain  
differential input impedance  
noise output voltage  
0.3  
30  
%
note 1  
dB  
kΩ  
μV  
dB  
dB  
μV  
dB  
100  
note 2  
note 3  
note 4  
note 5  
100  
SVRR  
supply voltage ripple rejection  
50  
40  
Vo(mute)  
output voltage in mute condition  
channel separation  
200  
αcs  
40  
Notes  
R2  
R1  
-------  
1. Gain of the amplifier is 2 ×  
in test circuit of Fig.3.  
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a  
source impedance of RS = 0 Ω at the input.  
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.  
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to  
the positive supply rail.  
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.  
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),  
which is applied to the positive supply rail.  
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including  
noise.  
1998 Mar 25  
7
 
 
 
 
 
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
TEST AND APPLICATION INFORMATION  
Test conditions  
function of frequency was measured with a low-pass filter  
of 80 kHz. The value of capacitor C3 influences the  
behaviour of the SVRR at low frequencies, increasing the  
value of C3 increases the performance of the SVRR.  
The figure of the mode select voltage (Vms) as a function  
of the supply voltage shows three areas; operating, mute  
and standby. It shows, that the DC-switching levels of the  
mute and standby respectively depends on the supply  
voltage level.  
Because the application can be either Bridge-Tied Load  
(BTL) or Single-Ended (SE), the curves of each application  
are shown separately.  
The thermal resistance = 110 K/W for the SSOP20; the  
maximum sine wave power dissipation for Tamb = 25 °C is:  
150 25  
110  
= 1.14 W  
----------------------  
SE application  
For Tamb = 60 °C the maximum total power dissipation is:  
Tamb = 25°C if not specially mentioned, VCC = 7.5 V,  
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
150 60  
---------------------- = 0.82 W  
110  
The SE application diagram is illustrated in Fig.14.  
Thermal design considerations  
If the BTL/SE pin (pin 6) is connected to ground, the  
positive outputs (pins 3 and 8) will be in mute condition  
with a DC level of 12VCC. When a headphone is used  
(RL 25 Ω) the SE headphone application can be used  
without output coupling capacitors; load between negative  
output and one of the positive outputs (e.g. pin 3) as  
common pin. The channel separation will be less in  
comparison with the application using a coupling capacitor  
connected to ground.  
The ‘measured’ thermal resistance of the IC package is  
highly dependent on the configuration and size of the  
application board. Data may not be comparable between  
different semiconductor manufacturers because the  
application boards and test methods are not (yet)  
standardized. Also, the thermal performance of packages  
for a specific application may be different than presented  
here, because the configuration of the application boards  
(copper area) may be different. Philips Semiconductors  
uses FR-4 type application boards with 1 oz copper traces  
with solder coating.  
Increasing the value of electrolytic capacitor C3 will result  
in a better channel separation. Because the positive output  
is not designed for high output current (2 × Io) at low load  
impedance (16 Ω), the SE application with output  
capacitors connected to ground is advised. The capacitor  
value of C4/C5 in combination with the load impedance  
determines the low frequency behaviour. The THD as a  
function of frequency was measured using a low-pass filter  
of 80 kHz. The value of capacitor C3 influences the  
behaviour of the SVRR at low frequencies, increasing the  
value of C3 increases the performance of the SVRR.  
The SSOP package has improved thermal conductivity  
which reduces the thermal resistance. Using a practical  
PCB layout (see Fig.22) with wider copper tracks to the  
corner pins and just under the IC, the thermal resistance  
from junction to ambient can be reduced to approximately  
80 K/W. For Tamb = 60 °C the maximum total power  
150 60  
dissipation for this PCB layout is: ---------------------- = 1.12 W  
80  
General remark  
BTL application  
The frequency characteristic can be adapted by  
connecting a small capacitor across the feedback resistor.  
To improve the immunity of HF radiation in radio circuit  
applications, a small capacitor can be connected in parallel  
with the feedback resistor (56 kΩ); this creates a low-pass  
filter.  
Tamb = 25°C if not specially mentioned, VCC = 5 V,  
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
The BTL application diagram is illustrated in Fig.3.  
The quiescent current has been measured without any  
load impedance. The total harmonic distortion as a  
1998 Mar 25  
8
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
BTL APPLICATION  
V
CC  
R2  
R1  
50 kΩ  
100 nF  
100 μF  
1 μF  
20  
11  
+
INL  
17  
16  
+
OUTL  
18  
3
10 kΩ  
INL  
V
iL  
C3  
47 μF  
R
L
OUTL  
OUTR  
50 kΩ  
R4  
R3  
TDA8542TS  
1 μF  
+
INR  
14  
15  
10 kΩ  
+
OUTR  
INR  
13  
8
V
iR  
SVR  
R
L
5
4
6
MODE  
OUTR  
R2  
-------  
Gain left = 2 ×  
BTL/SE  
R1  
1
10  
R4  
-------  
Gain right = 2 ×  
R3  
GND  
MBK443  
Pins 2, 7, 9, 12 and 19 are not connected.  
Fig.3 BTL application.  
MGD890  
MBK446  
30  
10  
handbook, halfpage  
handbook, halfpage  
I
q
THD  
(%)  
(mA)  
1
20  
1  
10  
10  
2  
10  
0
2  
1  
10  
10  
1
10  
0
4
8
12  
16  
V
20  
(V)  
P
(W)  
o
CC  
RL = .  
f = 1 kHz; Gv = 20 dB; VCC = 5 V; RL = 8 Ω.  
Fig.4 Iq as a function of VCC  
.
Fig.5 THD as a function of Po.  
1998 Mar 25  
9
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
MBK447  
MGD893  
10  
60  
handbook, halfpage  
handbook, halfpage  
α
(dB)  
cs  
THD  
(%)  
(1)  
(2)  
70  
1
80  
90  
(3)  
1  
10  
2  
10  
100  
2
3
5
4
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
f (Hz)  
f (Hz)  
VCC = 5 V, Vo = 2 V, RL = 8 Ω.  
(1) Gv = 30 dB.  
(2) Gv = 20 dB.  
(3) Gv = 6 dB.  
Po = 0.5 W; Gv = 20 dB; VCC = 5 V; RL = 8 Ω.  
Fig.7 Channel separation as a function of  
frequency.  
Fig.6 THD as a function of frequency.  
MBK448  
MGD894  
2.5  
20  
handbook, halfpage  
handbook, halfpage  
P
o
SVRR  
(dB)  
(W)  
2
40  
60  
1.5  
1
(1)  
(2)  
(3)  
(1)  
(2)  
0.5  
80  
0
0
2
3
4
5
10  
10  
10  
10  
10  
4
8
12  
f (Hz)  
V
(V)  
CC  
VCC = 5 V, Rs = 0 Ω, Vr = 100 mV.  
(1) Gv = 30 dB.  
THD = 10%.  
(2) Gv = 20 dB.  
(1) RL = 8 Ω.  
(2) RL = 16 Ω.  
(3) Gv = 6 dB.  
Fig.8 SVRR as a function of frequency.  
Fig.9 Po as a function of VCC.  
1998 Mar 25  
10  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
MBK450  
MBK449  
3
3
handbook, halfpage  
handbook, halfpage  
P
(W)  
P
(W)  
2
1
2
(2)  
(1)  
1
0
0
0
0.5  
1
1.5  
2
2.5  
0
4
8
12  
V
(V)  
P
(W)  
CC  
o
(1) RL = 8 Ω.  
(2) RL = 16 Ω.  
Sine wave of 1 kHz; VCC = 5 V; RL = 8 Ω.  
Fig.10 Worst case power dissipation as a function  
of VCC  
.
Fig.11 P as a function of Po.  
MGL210  
MGD898  
10  
o
(V)  
1
16  
handbook, halfpage  
handbook, halfpage  
V
V
MODE  
(V)  
12  
1  
standby  
10  
2  
10  
8
4
(1)  
(2) (3)  
3  
10  
mute  
4  
10  
5  
10  
operating  
12 16  
6  
10  
0
0
1  
2
10  
1
10  
10  
4
8
V
(V)  
ms  
V
(V)  
P
Band-pass = 22 Hz to 22 kHz.  
(1) VCC = 3 V.  
(2) VCC = 5 V.  
(3)  
VCC = 12 V.  
Fig.12 Vo as a function of Vms  
.
Fig.13 VMODE as a function of VP.  
1998 Mar 25  
11  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
SE APPLICATION  
V
CC  
100 μF  
R2  
R1  
100 kΩ  
100 nF  
1 μF  
20  
11  
+
INL  
17  
16  
C4  
10 kΩ  
OUTL  
INL  
18  
3
V
iL  
C3  
47 μF  
470 μF  
R
L
= 8 Ω  
OUTR  
+
OUTL  
100 kΩ  
R4  
R3  
TDA8542TS  
1 μF  
+
INR  
14  
15  
5
10 kΩ  
INR  
C5  
V
iR  
OUTR  
13  
8
SVR  
470 μF  
R
L
= 8 Ω  
+
MODE  
OUTR  
4
R2  
-------  
BTL/SE  
Gain left =  
6
R1  
1
10  
R4  
Gain right = -------  
R3  
GND  
MBK444  
Pins 2, 7, 9, 12 and 19 are not connected.  
Fig.14 Single-ended application.  
MGD900  
MGD899  
10  
10  
handbook, halfpage  
handbook, halfpage  
THD  
(%)  
THD  
(%)  
1
1
(1)  
(2)  
1  
1  
(3)  
10  
10  
10  
(1)  
(2)  
(3)  
2  
2  
10  
2
3
4
5
2  
1  
10  
10  
10  
10  
10  
10  
10  
1
10  
f (Hz)  
P
(W)  
o
f = 1 kHz, Gv = 20 dB.  
Po = 0.5 W, Gv = 20 dB.  
(1) VCC = 7.5 V, RL = 4 Ω.  
(2) VCC = 9 V, RL = 8 Ω.  
(1) VCC = 7.5 V, RL = 4 Ω.  
(2) VCC = 9 V, RL = 8 Ω.  
(3)  
V
CC = 12 V, RL = 16 Ω.  
(3) VCC = 12 V, RL = 16 Ω.  
Fig.15 THD as a function of Po.  
Fig.16 THD as a function of frequency.  
1998 Mar 25  
12  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
MGD901  
20  
handbook, halfpage  
MGD902  
α
cs  
(dB)  
20  
handbook, halfpage  
40  
SVRR  
(dB)  
(1)  
40  
60  
60  
(2)  
(1)  
(2)  
(3)  
(4)  
(5)  
80  
(3)  
100  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
80  
2
3
4
5
10  
10  
10  
10  
10  
Vo = 1 V, Gv = 20 dB.  
f (Hz)  
(1) VCC = 5 V, RL = 32 Ω, to buffer.  
(2) VCC = 7.5 V, RL = 4 Ω.  
(3)  
VCC = 9 V, RL = 8 Ω.  
RS = 0 Ω, Vripple = 100 mV.  
(1) Gv = 24 dB.  
(4) VCC = 12 V, RL = 16 Ω.  
(5) VCC = 5 V, RL = 32 Ω.  
(2) Gv = 20 dB.  
(3) Gv = 0 dB.  
Fig.17 Channel separation as a function of  
frequency.  
Fig.18 SVRR as a function of frequency.  
MBK451  
MBK452  
2
3
handbook, halfpage  
handbook, halfpage  
P
o
(W)  
1.6  
P
(W)  
(1)  
2
1
(2)  
(3)  
(2)  
(1)  
1.2  
0.8  
(3)  
0.4  
0
0
0
0
4
8
12  
16  
4
8
12  
16  
V
(V)  
V
(V)  
CC  
CC  
THD = 10%.  
(1) RL = 4 Ω.  
(2) RL = 8 Ω.  
THD = 10%.  
(1) RL = 4 Ω.  
(2) RL = 8 Ω.  
(3)  
RL = 16 Ω.  
(3)  
RL = 16 Ω.  
Fig.20 Worst case power dissipation as a function  
of VCC  
Fig.19 Po as a function of VCC  
.
.
1998 Mar 25  
13  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
MGD905  
2.4  
handbook, halfpage  
P
(W)  
(1)  
1.6  
(2)  
(3)  
0.8  
0
0
0.4  
0.8  
1.2  
1.6  
P
(W)  
o
f = 1 kHz.  
(1) VCC = 12 V, RL = 16 Ω.  
(2) VCC = 7.5 V, RL = 4 Ω.  
(3) VCC = 9 V, RL = 8 Ω.  
Fig.21 P as a function of Po.  
1998 Mar 25  
14  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
a. Top view copper layout.  
+V  
GND  
CC  
TDA  
8542TS  
8547TS  
OUT1  
+OUT1  
100 μF  
10 kΩ  
100 nF  
56 kΩ  
10 kΩ  
IN1  
1 μF  
MODE  
20  
1
11 kΩ  
11 kΩ  
47 μF  
11  
10  
TDA  
8542/47TS  
SELECT  
IN2  
56 kΩ  
CIC  
Nijmegen  
1 μF  
OUT2  
+OUT2  
MGK997  
b. Top view components layout.  
Fig.22 Printed-circuit board layout (BTL).  
15  
1998 Mar 25  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
PACKAGE OUTLINE  
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm  
SOT266-1  
D
E
A
X
c
y
H
v
M
A
E
Z
11  
20  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
10  
detail X  
w
M
b
p
e
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
10o  
0o  
0.15  
0
1.4  
1.2  
0.32  
0.20  
0.20  
0.13  
6.6  
6.4  
4.5  
4.3  
6.6  
6.2  
0.75  
0.45  
0.65  
0.45  
0.48  
0.18  
mm  
1.5  
0.65  
1
0.2  
0.25  
0.13  
0.1  
Note  
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-19  
SOT266-1  
MO-152  
1998 Mar 25  
16  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
SOLDERING  
Introduction  
If wave soldering cannot be avoided, the following  
conditions must be observed:  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave)  
soldering technique should be used.  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
The longitudinal axis of the package footprint must  
be parallel to the solder flow and must incorporate  
solder thieves at the downstream end.  
Even with these conditions, only consider wave  
soldering SSOP packages that have a body width of  
4.4 mm, that is SSOP16 (SOT369-1) or  
SSOP20 (SOT266-1).  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Reflow soldering  
Reflow soldering techniques are suitable for all SSOP  
packages.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
Several techniques exist for reflowing; for example,  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Repairing soldered joints  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
Wave soldering  
Wave soldering is not recommended for SSOP packages.  
This is because of the likelihood of solder bridging due to  
closely-spaced leads and the possibility of incomplete  
solder penetration in multi-lead devices.  
1998 Mar 25  
17  
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Limited warranty and liability Information in this  
document is believed to be accurate and reliable.  
However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to  
the accuracy or completeness of such information and  
shall have no liability for the consequences of use of such  
information.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
In no event shall NXP Semiconductors be liable for any  
indirect, incidental, punitive, special or consequential  
damages (including - without limitation - lost profits, lost  
savings, business interruption, costs related to the  
removal or replacement of any products or rework  
charges) whether or not such damages are based on tort  
(including negligence), warranty, breach of contract or any  
other legal theory.  
Customers are responsible for the design and operation of  
their applications and products using NXP  
Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole  
responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as  
for the planned application and use of customer’s third  
party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks  
associated with their applications and products.  
Notwithstanding any damages that customer might incur  
for any reason whatsoever, NXP Semiconductors’  
aggregate and cumulative liability towards customer for  
the products described herein shall be limited in  
accordance with the Terms and conditions of commercial  
sale of NXP Semiconductors.  
NXP Semiconductors does not accept any liability related  
to any default, damage, costs or problem which is based  
on any weakness or default in the customer’s applications  
or products, or the application or use by customer’s third  
party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and  
products using NXP Semiconductors products in order to  
avoid a default of the applications and the products or of  
the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this  
respect.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
1998 Mar 25  
18  
 
 
NXP Semiconductors  
Product specification  
2 × 0.7 W BTL audio amplifier  
TDA8542TS  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) will cause permanent damage to  
the device. Limiting values are stress ratings only and  
(proper) operation of the device at these or any other  
conditions above those given in the Recommended  
operating conditions section (if present) or the  
Characteristics sections of this document is not warranted.  
Constant or repeated exposure to limiting values will  
permanently and irreversibly affect the quality and  
reliability of the device.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Non-automotive qualified products Unless this data  
sheet expressly states that this specific NXP  
Semiconductors product is automotive qualified, the  
product is not suitable for automotive use. It is neither  
qualified nor tested in accordance with automotive testing  
or application requirements. NXP Semiconductors accepts  
no liability for inclusion and/or use of non-automotive  
qualified products in automotive equipment or  
applications.  
Terms and conditions of commercial sale NXP  
Semiconductors products are sold subject to the general  
terms and conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an  
individual agreement is concluded only the terms and  
conditions of the respective agreement shall apply. NXP  
Semiconductors hereby expressly objects to applying the  
customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
In the event that customer uses the product for design-in  
and use in automotive applications to automotive  
specifications and standards, customer (a) shall use the  
product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and  
specifications, and (b) whenever customer uses the  
product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at  
customer’s own risk, and (c) customer fully indemnifies  
NXP Semiconductors for any liability, damages or failed  
product claims resulting from customer design and use of  
the product for automotive applications beyond NXP  
Semiconductors’ standard warranty and NXP  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Semiconductors’ product specifications.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
1998 Mar 25  
19  
NXP Semiconductors  
provides High Performance Mixed Signal and Standard Product  
solutions that leverage its leading RF, Analog, Power Management,  
Interface, Security and Digital Processing expertise  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2010  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
545102/25/02/pp20  
Date of release: 1998 Mar 25  
Document order number: 9397 750 03351  

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