TDA8571_技术文档

INTEGRATED CIRCUITS

DATA SHEET

TDA8571J

4 x 40 W BTL quad car radio power

amplifier

1998 Mar 13

Preliminary speciﬁcation

File under Integrated Circuits, IC01

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

FEATURES

GENERAL DESCRIPTION

• Requires very few external components

• High output power

The TDA8571J is a integrated class-B output amplifier

contained in a 23-lead Single-In-Line (SIL) plastic power

package. It contains four amplifiers in a BTL configuration,

each with a gain of 34 dB. The output power is 4 × 40 W

(EIAJ) into a 4 Ω load.

• Low output offset voltage

• Fixed gain

• Diagnostic facility (distortion, short-circuit and

temperature pre-warning)

APPLICATIONS

• Good ripple rejection

• The device is primarily developed for car radio

applications.

• Mode select switch (operating, mute and standby)

• Load dump protection

• Short-circuit safe to ground and to V_Pand across the

load

• Low power dissipation in any short-circuit condition

• Thermally protected

• Reverse polarity safe

• Electrostatic discharge protection

• No switch-on/switch-off plop

• Flexible leads

• Low thermal resistance

• Pin compatible with the TDA8568Q, except for the gain.

QUICK REFERENCE DATA

SYMBOL

V_P

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

operating supply voltage

repetitive peak output current

total quiescent current

standby current

6

14.4

−

18

7.5

−

V

I_ORM

I_q(tot)

I_stb

−

A

−

200

0.2

−

mA

µA

kΩ

W

−

100

80

−

I_sw

switch-on current

−

Z_i

input impedance

25

−

30

40

50

34

−

P_o(max)

SVRR

α_cs

maximum output power

supply voltage ripple rejection

channel separation

THD = maximum

−

R_s= 0 Ω

−

dB

µV

mV

R_s= 10 kΩ

−

G_v(cl)

V_n(o)

V_OS

∆V_OS

closed-loop voltage gain

noise output voltage

33

−

35

170

80

R_s= 0 Ω

MUTE

DC output offset voltage

delta DC output offset voltage

−

ON ↔ MUTE

−

ORDERING INFORMATION

TYPE

PACKAGE

NUMBER

NAME

DESCRIPTION

VERSION

TDA8571J

DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)

SOT411-1

1998 Mar 13

2

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

BLOCK DIAGRAM

V

MODE

15

P1

1

P2

8

P3

16

P4

23

handbook, full pagewidth

10

IN1

+

−

2

4

OUT1+

OUT1−

30 kΩ

+

−

V

ref

11

IN2

+

−

7

OUT2+

OUT2−

30 kΩ

+

−

5

9

12

13

SGND

IN3

V

TDA8571J

30 kΩ

DIAGNOSTIC

DIAG

+

−

17

OUT3+

+

−

19

OUT3−

V

ref

14

IN4

+

−

22

20

OUT4+

OUT4−

30 kΩ

+

−

3

6

18

21

MGM562

PGND1 PGND2 PGND3 PGND4

Fig.1 Block diagram.

3

1998 Mar 13

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

PINNING

SYMBOL

V_P1

DESCRIPTION

supply voltage 1

1

2

handbook, halfpage

V

1

2

3

4

5

6

7

8

9

P1

OUT1+

PGND1

OUT1−

OUT2−

PGND2

OUT2+

V_P2

output 1+

OUT1+

PGND1

OUT1−

OUT2−

PGND2

OUT2+

3

power ground 1

output 1−

4

5

output 2−

6

power ground 2

output 2+

7

8

supply voltage 2

diagnostic output

input 1

V_DIAG

IN1

9

V

P2

10

11

12

13

14

15

16

17

18

19

20

21

22

23

V

IN2

input 2

DIAG

SGND

IN3

signal ground

input 3

IN1 10

IN2 11

IN4

input 4

TDA8571J

SGND 12

IN3 13

MODE

V_P3

mode select switch input

supply voltage 3

output 3+

IN4 14

OUT3+

PGND3

OUT3−

OUT4−

PGND4

OUT4+

V_P4

MODE 15

power ground 3

output 3−

V

16

P3

output 4−

OUT3+ 17

PGND3 18

OUT3− 19

OUT4− 20

PGND4 21

OUT4+ 22

power ground 4

output 4+

supply voltage 4

V

23

P4

MGM563

Fig.2 Pin configuration.

1998 Mar 13

4

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

FUNCTIONAL DESCRIPTION

SHORT-CIRCUIT DIAGNOSTIC

The TDA8571J contains four identical amplifiers which can

be used for bridge applications. The gain of each amplifier

is fixed at 34 dB.

When a short-circuit occurs at one or more outputs to

ground or to the supply voltage, the output stages are

switched off until the short-circuit is removed and the

device is switched on again, with a delay of approximately

10 ms after removal of the short-circuit. During this

short-circuit condition, pin 9 is continuously LOW.

Mode select switch (pin 15)

• Standby: low supply current (<100 µA)

• Mute: input signal suppressed

When a short-circuit occurs across the load of one or more

channels, the output stages are switched off during

approximately 10 ms. After that time it is checked during

approximately 50 µs to determine whether the short-circuit

is still present.

• Operating: normal on condition.

Since this pin has a low input current (<80 µA), a low cost

supply switch can be applied.

Due to this duty cycle of 50 µs/10 ms the average current

consumption during this short-circuit condition is very low.

To avoid switch-on plops, it is advised to keep the amplifier

in the mute mode during ≥150 ms (charging of the input

capacitors at pins 10, 11, 13 and 14). When switching

from standby to mute, the slope should be at least 18 V/s.

During this short-circuit condition, pin 9 is LOW for 10 ms

and HIGH for 50 µs (see Fig.5). The protection circuits of

all channels are coupled. This means that if a short-circuit

condition occurs in one of the channels, all channels are

switched off. Consequently, the power dissipation in any

short-circuit condition is very low.

This can be realized by:

• Microprocessor control

• External timing circuit (see Fig.3).

TEMPERATURE PRE-WARNING

Diagnostic output (pin 9)

When the virtual junction temperature T_vjreaches 145 °C,

pin 9 goes LOW.

DYNAMIC DISTORTION DETECTOR (DDD)

At the onset of clipping of one or more output stages, the

dynamic distortion detector becomes active and pin 9

goes LOW. This information can be used to drive a sound

processor or DC volume control to attenuate the input

signal and so limit the distortion. The output level of pin 9

is independent of the number of channels that are clipping

(see Fig.4).

OPEN COLLECTOR OUTPUTS

The diagnostic pin has an open collector output, so more

devices can be tied together. An external pull-up resistor is

needed.

MGG155

handbook, halfpage

V

o

+V

P

handbook, halfpage

0

10 kΩ

MODE

47 µF

V

9

BZX79C/3.9V

V

P

MGD959

0

t

Fig.3 Mode select switch circuitry.

Fig.4 Distortion detector waveform.

1998 Mar 13

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Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

short

circuit

handbook, full pagewidth

MGG156

current

t

short-circuit over the load

V

9

10 ms

V

P

t

50 µs

Fig.5 Short-circuit waveform.

1998 Mar 13

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Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

V_P

PARAMETER

supply voltage

CONDITIONS

operating

MIN.

MAX.

UNIT

−

18

30

45

V

non-operating

load dump protection;

during 50 ms; t_r≥ 2.5 ms

V_sc(safe)

V_rp

short-circuit safe voltage

reverse polarity voltage

−

18

6

V

I_OSM

I_ORM

P_tot

non-repetitive peak output current

repetitive peak output current

total power dissipation

10

A

7.5

A

60

W

°C

T_stg

storage temperature

−55

−40

−

+150

+85

150

T_amb

T_vj

operating ambient temperature

virtual junction temperature

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

K/W

R_{th j-a}

R_{th j-c}

thermal resistance from junction to ambient in free air

thermal resistance from junction to case (see Fig.6)

40

1

virtual junction

OUT2 OUT3

handbook, halfpage

OUT1

OUT4

3.2 K/W

0.2 K/W

case

MGG157

Fig.6 Equivalent thermal resistance network.

1998 Mar 13

7

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

QUALITY SPECIFICATION

In accordance with “SNW-FQ-0611E”. The number of the quality specification can be found in the “Quality Reference

Handbook”. The handbook can be ordered using the code 9397 750 00192.

DC CHARACTERISTICS

V_P= 14.4 V; T_amb= 25 °C; measured in Fig.7; unless otherwise speciﬁed.

SYMBOL

Supply

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_P

supply voltage

quiescent current

note 1

6

14.4

200

18

V

I_q(tot)

R_L= ∞

−

360

mA

Operating condition

V₁₅

I₁₅

mode select switch level

8.5

−

V_p

80

−

V

mode select switch current

output voltage

V₁₅= 14.4 V

note 2

30

7.0

µA

V

V_O

−

Mute condition

V₁₅

mode select switch level

output voltage

3.3

−

6.4

−

V

V_O

note 2

7.0

−

V

V_OS

∆V_OS

DC output offset voltage

delta DC output offset voltage

MUTE

−

80

mV

ON ↔ MUTE

−

Standby condition

V₁₅

I_stb

mode select switch level

0

−

2

V

standby current

−

0.2

100

µA

Diagnostic

V₉

T_vj

diagnostic output voltage

temperature pre-warning

during any fault condition

V₉= 0.6 V

−

0.6

V

145

−

°C

Notes

1. The circuit is DC adjusted at V_P= 6 to 18 V and AC operating at V_P= 8.5 to 18 V.

2. At 18 V < V_P< 30 V the DC output voltage ≤ ¹⁄₂V_P.

1998 Mar 13

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Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

AC CHARACTERISTICS

V_P= 14.4 V; R_L= 4 Ω; f = 1 kHz; T_amb= 25 °C; measured in Fig.7; unless otherwise speciﬁed.

SYMBOL

P_o

PARAMETER

output power

CONDITIONS

THD = 0.5%

MIN.

16

TYP.

19

MAX.

UNIT

−

W

THD = 10%

21

−

26

−

W

V_P= 13.7 V; THD = 0.5%

V_P= 13.7 V; THD = 10%

17.5

23

−

P_o(max)

THD

maximum output power

total harmonic distortion

THD = maximum;V_i= 2 V (p-p) 34

square wave

40

P_o= 1 W

−

0.1

10

−

%

V₉= 0.6 V; note 1

%

B_p

power bandwidth

THD = 0.5%; P_o= −1 dB

20 to

Hz

with respect to 16 W

20000

f_ro(l)

low frequency roll-off

high frequency roll-off

closed-loop voltage gain

at −1 dB; note 2

at −1 dB

−

25

−

Hz

f_ro(h)

20

33

40

−

kHz

dB

G_v(cl)

SVRR

34

−

35

−

supply voltage ripple rejection on; R_s= 0 Ω;

V_ripple= V_ripple(max)= 2 V (p-p)

dB

mute; R_s= 0 Ω;

V_ripple= V_ripple(max)= 2 V (p-p)

50

80

−

dB

standby; R_s= 0 Ω;

V_ripple= V_ripple(max)= 2 V (p-p)

Z_i

input impedance

25

30

38

kΩ

µV

V_n(o)

noise output voltage

on; R_s= 0 Ω;

−

125

170

B = 20 Hz to 20 kHz

on; R_s= 10 kΩ;

B = 20 Hz to 20 kHz

−

150

100

−

µV

mute; B = 20 Hz to 20 kHz;

independent of R_s

α_cs

∆G_v

V_o

channel separation

channel unbalance

output signal in mute

P_o= 16 W; R_s= 10 kΩ

45

−

1

2

dB

mV

V_i= V_i(max)= 1 V (RMS)

−

Notes

1. Dynamic Distortion Detector (DDD) active, pin 9 is set to logic 0.

2. Frequency response externally fixed.

1998 Mar 13

9

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

TEST AND APPLICATION INFORMATION

V

handbook, full pagewidth

MODE

P

+14.4 V

2200 µF

100 nF

V

1

V

8

V

P1

P2

P3

16

P4

23

15

10

IN1

input 1

input 2

input 3

input 4

+

−

2

4

OUT1+

OUT1−

470 nF

30 kΩ

R

L

= 4 Ω

+

−

V

ref

11

IN2

+

−

7

OUT2+

OUT2−

470 nF

30 kΩ

R

= 4 Ω

+V

L

+

−

5

9

10 kΩ

P

12

13

SGND

IN3

V

DIAG

diagnostic

output

TDA8571J

DIAGNOSTIC

+

−

17

OUT3+

OUT3−

470 nF

30 kΩ

R

L

= 4 Ω

+

−

19

V

ref

14

IN4

+

−

22

20

OUT4+

OUT4−

470 nF

30 kΩ

R

L

= 4 Ω

+

−

3

6

18

21

PGND1 PGND2 PGND3 PGND4

MGM564

power ground (substrate)

Special care must be taken in the PCB-layout to separate pin 9 from the pins 10, 11 13 and 14 to minimize the crosstalk between the clip output and

the inputs.

To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥ 150 ms (charging the input capacitors at pins

10, 11, 13 and 14).

Fig.7 Application circuit diagram.

1998 Mar 13

10

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

Test information

Figures 8 to 13 have the following conditions: V_P= 14.4 V; R_L= 4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise

specified.

MGM566

MGM567

300

80

handbook, halfpage

P

o

(W)

I

P

(mA)

60

200

40

20

(1)

100

(2)

(3)

0

8

4

8

12

16

20

10

12

14

16

18

V

(V)

V

(V)

P

(1) EIAJ; 100 Hz.

(2) THD + N = 10%.

(3) THD + N = 0.5%.

Fig.8 I_Pas a function of V_P.

Fig.9 P_oas a function of V_P.

MGM568

MGM569

10

handbook, halfpage

THD + N

(%)

THD + N

(%)

1

(1)

(2)

(1)

−1

10

−1

10

(2)

(3)

−2

10

−2

10

−2

−1

2

10

1

10

2

3

4

5

10

P

(W)

f (Hz)

o

(1) f = 10 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

(1) P_o= 1 W.

(2) P_o= 10 W.

Fig.10 THD + N as a function of P_o.

Fig.11 THD + N as a function of frequency.

1998 Mar 13

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Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

MGM570

MGM565

−20

−30

handbook, halfpage

α

cs

SVRR

(dB)

(1)

−40

−50

(2)

−60

−80

−70

−90

2

3

4

5

2

3

4

5

10

f (Hz)

(1) Between channels 1 and 2 or between channels 3 and 4.

(2) Between channels 1 or 2 and channels 3 or 4.

Fig.13 Channel separation as a function of

frequency.

Fig.12 SVRR as a function of frequency.

1998 Mar 13

12

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

PCB layout

111.76

handbook, full pagewidth

78.74

Pgnd

100 nF

2200 µF

V

P

−

out1

−

out 4

+

470 nF

−

out 3

+

out2

+

diag

in

sgnd

in

mode

10 kΩ

1

2

3

4

MGK079

Dimensions in mm.

Fig.14 PCB layout (component side).

13

1998 Mar 13

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

111.76

handbook, full pagewidth

78.74

Pgnd

100nF

2200 µF

V

P

−

out1

out 4

+

470 nF

−

out 3

+

−

out2

+

mode

in

sgnd

in

diag

10 kΩ

4

3

2

1

MGK080

Dimensions in mm.

Fig.15 PCB layout (soldering side).

14

1998 Mar 13

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

PACKAGE OUTLINE

DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)

SOT411-1

non-concave

D

h

x

D

E

h

view B: mounting base side

d

A

2

β

A

5

4

E

2

B

j

E

1

L

2

L

3

1

23

L

c

2

Q

v M

e

w

M

1

Z

b

p

e

m

e

0

5

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT A

A

b

c

D

d

D

E

e

E

j

L

3

m

Q

v

w

x

β

Z

2

4

5

p

h

1

2

h

1

2

1

2

4.6 1.15 1.65 0.75 0.55 30.4 28.0

4.3 0.85 1.35 0.60 0.35 29.9 27.5

12.2

11.8

10.15 6.2 1.85 3.6 14.0 10.7 2.4

9.85 5.8 1.65 2.8 13.0 9.9 1.6

1.43

0.78

2.1

1.8

6

mm

12

2.54 1.27 5.08

4.3

0.6 0.25 0.03 45°

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

96-10-11

98-02-20

SOT411-1

1998 Mar 13

15

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (T_{stg max}). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not

more than 2 mm above it. If the temperature of the

soldering iron bit is less than 300 °C it may remain in

contact for up to 10 seconds. If the bit temperature is

between 300 and 400 °C, contact may be up to 5 seconds.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “IC Package Databook” (order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joint for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1998 Mar 13

16

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

NOTES

1998 Mar 13

17

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

NOTES

1998 Mar 13

18

Philips Semiconductors

Preliminary speciﬁcation

4 x 40 W BTL quad car radio power

ampliﬁer

TDA8571J

NOTES

1998 Mar 13

19

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

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Fax. +43 160 101 1210

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Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

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106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Belgium: see The Netherlands

Brazil: see South America

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Colombia: see South America

Czech Republic: see Austria

Slovakia: see Austria

Slovenia: see Italy

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 3 301 6312, Fax. +34 3 301 4107

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 632 2000, Fax. +46 8 632 2745

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2686, Fax. +41 1 488 3263

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Uruguay: see South America

Vietnam: see Singapore

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA57

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

545102/1200/01/pp20

Date of release: 1998 Mar 13

Document order number: 9397 750 03261


型号：	TDA8571
厂家：	NXP
描述：	4 x 40 W BTL quad car radio power amplifier 4× 40瓦四核BTL汽车收音机功率放大器放大器功率放大器
文件：	总20页 (文件大小：259K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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