TEA1610P [NXP]
Zero-voltage-switching resonant converter controller; 零电压开关谐振变换器的控制器
| 型号： | TEA1610P |
| 厂家： | 
NXP |
| 描述： | Zero-voltage-switching resonant converter controller |
| 文件： | 总20页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1610P; TEA1610T
Zero-voltage-switching
resonant converter controller
Product specification
2001 Apr 25
File under Integrated Circuits, IC11
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
FEATURES
• Integrated high voltage level-shift function
• Integrated high voltage bootstrap diode
• Transconductance error amplifier for ultra high-ohmic
regulation feedback
V
handbook, halfpage
HS
• Latched shut-down circuit for overcurrent and
overvoltage protection
V
DD
bridge voltage
supply
(high side)
• Low start-up current (green function)
• Adjustable minimum and maximum frequencies
• Adjustable dead time
MOSFET
SWITCH
• Undervoltage lockout.
HALF-
TEA1610
RESONANT
BRIDGE
CONVERTER
CIRCUIT
GENERAL DESCRIPTION
The TEA1610 is a monolithic integrated circuit
implemented in a high-voltage DMOS process. The circuit
is a high voltage controller for a zero-voltage switching
resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge
configuration. It also includes a level-shift circuit, an
oscillator with accurately-programmable frequency range,
a latched shut-down function and a transconductance
error amplifier.
MGU336
signal
ground
power ground
Fig.1 Basic configuration.
To guarantee an accurate 50% switching duty factor, the
oscillator signal passes through a divide-by-two flip-flop
before being fed to the output drivers.
APPLICATIONS
• TV and monitor power supplies
• High voltage power supplies.
The circuit is very flexible and enables a broad range of
applications for different mains voltages.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VHS
bridge voltage supply (high side)
600
−225
300
550
V
IGH(source); IGL(source) gate driver source current
mA
mA
IGH(sink); IGL(sink)
fbridge(max)
gate driver sink current
maximum bridge frequency
Cf = 100 pF (see
Fig.10)
kHz
VI(CM)
error amplifier common mode input voltage
2.5
V
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TEA1610P
TEA1610T
DIP16
SO16
plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
plastic small outline package; 16 leads; body width 3.9 mm;
low stand-off height
SOT109-2
2001 Apr 25
2
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
BLOCK DIAGRAM
V
DD
11
8
V
DD(F)
BOOTSTRAP
7
SUPPLY
LEVEL
HIGH SIDE
GH
SHIFTER
DRIVER
TEA1610
6
SH
reset
10
4
LOW SIDE
DRIVER
GL
PGND
start/stop oscillation
LOGIC
15
SD
shut-down
start-up
9
2.33 V
SGND
2
÷
2
1
×
+
−
2
I
charge
I
I
gm
OSCILLATOR
ERROR
AMPLIFIER
0.6 V
12
2.5 V
3 V
I
discharge
5
13
16
14
3
MGU337
V
n.c.
VCO IRS
IFS
CF
REF
Fig.2 Block diagram.
2001 Apr 25
3
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
PINNING
SYMBOL PIN
DESCRIPTION
I−
1
2
3
4
5
6
7
8
error amplifier inverting input
error amplifier non-inverting input
error amplifier output
I+
VCO
PGND
n.c.
SH
handbook, halfpage
−
+
I
I
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
REF
power ground
SD
IRS
CF
IFS
V
not connected (high voltage spacer)
high side switch source
VCO
PGND
n.c.
GH
gate of the high side switch
TEA1610P
VDD(F)
floating supply voltage for the high side
driver
SH
DD
SGND
GL
9
signal ground
GL
GH
10 gate of the low side switch
11 supply voltage
SGND
V
VDD
IFS
DD(F)
12 oscillator discharge current input
13 oscillator capacitor
MGU338
CF
IRS
SD
14 oscillator charge current input
15 shut-down input
Fig.3 Pin configuration: TEA1610P.
VREF
16 reference voltage
handbook, halfpage
−
+
I
I
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
REF
SD
IRS
CF
IFS
V
VCO
PGND
n.c.
TEA1610T
SH
DD
GL
GH
SGND
V
DD(F)
MGU347
Fig.4 Pin configuration: TEA1610T.
2001 Apr 25
4
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
FUNCTIONAL DESCRIPTION
Start-up
During start-up, the voltage on the frequency capacitor (Cf)
is zero and defines the start-up state. The output voltage
of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80% of the maximum frequency
at the moment pin VDD reaches the start level.
When the applied voltage at VDD reaches VDD(initial) (see
Fig.5), the low side power switch is turned-on while the
high side power switch remains in the non-conducting
state. This start-up output state guarantees the initial
charging of the bootstrap capacitor (Cboot) used for the
floating supply of the high side driver.
The start-up state is maintained until VDD reaches the start
level (13.5 V), the oscillator is activated and the converter
starts operating.
V
DD(start)
V
DD
V
DD(initial)
0
GH-SH
0
GL
0
t
MGT998
Fig.5 Start-up.
2001 Apr 25
5
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Oscillator
The minimum frequency and the dead time are set by the
capacitor Cf and resistors Rf(min) and Rdt. The maximum
frequency is set by resistor R∆f (see Fig.10). The oscillator
frequency is exactly twice the bridge frequency to achieve
an accurate 50% duty factor. An overview of the oscillator
and driver signals is given in Fig.6.
The internal oscillator is a current-controlled oscillator that
generates a sawtooth output. The frequency of the
sawtooth is determined by the external capacitor Cf and
the currents flowing into the IFS and IRS pins.
CF
GH-SH
0
GL
0
dead time (high to low)
dead time (low to high)
t
MGT999
Fig.6 Oscillator and driver signals.
2001 Apr 25
6
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Dead time resistor Rdt (see Fig.10)
Rf(min) resistor. As a result, the charge current ICF
increases and the oscillation frequency increases. As the
falling slope of the oscillator is constant, the relationship
between the output frequency and the charge current is
not a linear function (see Figs 7 and 9):
The dead time resistor Rdt is connected between the 3 V
reference pin (VREF) and the IFS current input pin. The
voltage on the IFS pin is kept constant at a temperature
independant value of 0.6 V. The current that flows into the
IFS pin is determined by the value of resistor Rdt and the
2.4 V voltage drop across this resistor. The IFS input
current equals the discharge current of capacitor Cf and
determines the falling slope of the oscillator.
V
VCO – 0.6
I IRS2
=
=
----------------------------
R∆f
Cf × ∆VCf
t IRS2
× 2
-------------------------------
I
IRS1 + IIRS2
The falling slope time is used to create a dead time (tdt)
between two successive switching actions of the
half-bridge switches:
The maximum output voltage of the error amplifier and the
value of R∆f determine the maximum frequency:
2.4 V
Rdt
IIFS
=
-------------
VVCO(max) – 0.6
I IRS2(max)
=
-----------------------------------------
R∆f
Cf × ∆VCf
t dt
=
------------------------
IIFS
Cf × ∆VCf
t IRS(min)
=
× 2
-------------------------------------------
I
IRS1 + IIRS2(max)
t IFS = tdt
1
f max
=
----------
Tosc
Minimum frequency resistor (see Fig.10)
T osc = tIRS(min) + tIFS
The Rf(min) resistor is connected between the VREF pin (3 V
reference voltage) and the IRS current input (held at a
temperature independant voltage level of 0.6 V). The
charge current of the capacitor Cf is twice the current
flowing into the IRS pin.
Bridge frequency accuracy is optimum in the low
frequency region. At higher frequencies both the dead time
and the oscillator frequency show a decay.
The frequency of the oscillator depends on the value of
capacitor Cf, the peak-to-peak voltage swing VCf and the
charge and discharge currents. However, at higher
frequencies the accuracy decreases due to delays in the
circuit.
The Rf(min) resistor has a voltage drop of 2.4 V and its
resistance defines the minimum charge current (rising
slope) of the Cf capacitor if the control current is zero. The
minimum frequency is defined by this minimum charge
current (IIRS1) and the discharge current:
2.4 V
IIRS1
=
=
-----------------
Rf(min)
MGW001
handbook, halfpage
f
Cf × ∆VCf
osc
t IRS1
------------------------
2 × IIRS1
f
osc(max)
f
osc(start)
1
f min
=
-----------------------
t
dt + tIRS1
f
osc(min)
Maximum frequency resistor
The output voltage is regulated by changing the frequency
of the half-bridge converter. The maximum frequency is
determined by the R∆f resistor which is connected between
the error amplifier output VCO and the oscillator current
input pin IRS. The current that flows through the R∆f
resistor (IIRS2) is added to the current flowing through the
0
I
IRS
Fig.7 Frequency range.
2001 Apr 25
7
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Error amplifier
Shut-down
The error amplifier is a transconductance amplifier. Thus
the output current at pin VCO is determined by the
amplifier transconductance and the differential voltage on
input pins I+ and I−. The output current IVCO is fed to the
IRS input of the current-controlled oscillator.
The shut-down input (SD) has an accurate threshold level
of 2.33 V. When the voltage on input SD reaches 2.33 V,
both power switches immediately switch off and the
TEA1610 enters shut-down mode.
During shut-down mode, pin VDD is clamped by an internal
Zener diode at 12.0 V with 1 mA input current. This clamp
prevents VDD rising above the rating of 14 V due to low
supply current to the TEA1610 in shut-down mode.
The source capability of the error amplifier increases
current in the IRS pin when the differential input voltage is
positive. Therefore the minimum current is determined by
resistor Rf(min) and the minimum frequency setting is
independent of the characteristics of the error amplifier.
When the TEA1610 is in the shut-down mode, it can be
activated again only by lowering VDD below the VDD reset
level (5.3 V typical). The shut-down latch is then reset and
a new start-up cycle can commence (see Fig.8).
The error amplifier has a maximum output current of
0.5 mA for an output voltage up to 2.5 V. If the source
current decreases, the oscillator frequency also decreases
resulting in a higher regulated output voltage.
During start-up, the output voltage of the amplifier is held
at a constant value of 2.5 V. This voltage level defines,
together with resistor R∆f, the initial switching frequency of
the TEA1610 after start-up.
oscillation
shut-
down
supply
off
start-up
oscillation
V
V
DD(start)
DD(sdc)
V
DD
V
V
DD(reset)
SD(th)
SD
GH-SH
0
GL
0
t
MGW002
Fig.8 Shut-down.
8
2001 Apr 25
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referred to the ground pins
which must be interconnected externally; positive currents flow into the IC.
SYMBOL
Voltages
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VSH
VDD
VI+
high side driver voltage
0
0
0
0
0
600
V
V
V
V
V
supply voltage
14
5
amplifier non-inverting input voltage
amplifier inverting input voltage
shut-down input voltage
VI−
5
VSD
5
Currents
IIFS
IIRS
IREF
oscillator falling slope input current
oscillator rising slope input current
VREF source current
−
−
−
1
mA
mA
mA
1
−2
Power and temperature
Ptot
total power dissipation
Tamb < 70 °C
−
0.8
W
Tamb
Tstg
ambient temperature
storage temperature
operating
−25
−25
+70
+150
°C
°C
Handling
VES
electrostatic handling voltage
note 1
note 2
−
−
2000
200
V
V
Notes
1. Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
2. Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and 10 Ω resistor.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
Rth(j-pin)
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient
thermal resistance from junction to pin
in free air
100
50
K/W
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”.
2001 Apr 25
9
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
CHARACTERISTICS
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC;
VDD = 13 V and Tamb = 25 °C; tested in the circuit of Fig.10; unless otherwise specified.
SYMBOL
High voltage pins VDD(F), GH and SH
IL leakage current
Supply pin VDD
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VDD(F), VGH and VSH = 600 V
low side on; high side off
−
−
30
µA
VDD(initial)
supply voltage for defined driver
−
4
5
V
output
VDD(start)
VDD(stop)
VDD(hys)
VDD(sdc)
start oscillator voltage
stop oscillator voltage
start-stop hysteresis voltage
shut-down clamp voltage
12.9
9.0
13.4
9.4
13.9
9.8
V
V
V
V
3.8
4.0
4.2
low side off; high side off;
IDD = 1 mA
11.0
12.0
13.0
VDD(reset)
IDD
reset voltage
supply current:
start-up
4.5
5.3
6.0
V
low side on; high side off
Cf = 100 pF; IIFS = 0.5 mA;
130
180
2.4
220
µA
operating
−
−
mA
IIRS = 50 µA; Co = 200 pF;
note 1
shut-down
low side off; high side off;
−
130
180
µA
VDD = 9 V
Reference voltage pin VREF
VREF
reference voltage
current capability
IREF = 0 mA
source only
IREF = −1 mA
2.9
−1.0
−
3.0
−
3.1
−
V
IREF
mA
Ω
Zo(VREF)
output impedance
temperature coefficient
5.0
−0.3
−
IREF = 0; Tj = 25 to 150 °C
−
−
mV/K
∆VREF
-----------------
∆T
Current controlled oscillator pins IRS, IFS, CF
ICF(ch)(min) minimum CF charge current
ICF(ch)(max) maximum CF charge current
IIRS = 15 µA; VCF = 2 V
IIRS = 200 µA; VCF = 2 V
IIRS = 200 µA
28
30
32
µA
340
570
47
380
600
50
420
630
53
µA
VIRS
pin IRS voltage
mV
µA
ICF(dis)(min) minimum CF discharge current
ICF(dis)(max) maximum CF discharge current
IIRS = 50 µA; VCF = 2 V
IIFS = 1 mA; VCF = 2 V
IIFS = 1 mA
0.93
570
188
0.98
600
200
1.03
630
212
mA
mV
kHz
VIFS
pin IFS voltage
fbridge(min)
minimum bridge frequency (for
stable operation)
CF = 100 pF; IIFS = 0.5 mA;
fosc
IIRS = 50 µA; f bridge =
--------
2
fbridge(max) maximum bridge frequency
Cf = 100 pF; IIFS = 1 mA;
450
500
550
kHz
fosc
IIRS = 200 µA; f bridge
=
;
--------
2
note 2
2001 Apr 25
10
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
SYMBOL
VCF(L)
VCF(H)
VCf(p-p)
tdt
PARAMETER
CF trip level LOW
CONDITIONS
MIN.
TYP.
1.27
3.0
MAX. UNIT
DC level
DC level
−
−
V
CF trip level HIGH
Cf voltage (peak-to-peak value)
dead time
−
−
V
1.63
0.37
1.73
0.40
1.83
0.43
V
Cf = 100 pF; IIFS = 0.5 mA;
µs
IIRS = 50 µA
Output drivers
IGH(source) high side output source current
VDD(F) = 13 V; VSH = 0; VGH = 0 −135
−180
−225
mA
mA
IGH(sink)
high side output sink current
VDD(F) = 13 V; VSH = 0;
VGH = 13 V
−
300
−
IGL(source)
IGL(sink)
VGH(H)
low side output source current
low side output sink current
high side output voltage HIGH
VGL = 0
−135
−
−180
300
12
−225
mA
mA
V
VGL = 14 V
−
−
VDD(F) = 13 V; VSH = 0;
IGH = 10 mA
10.8
VGH(L)
high side output voltage LOW
VDD(F) = 13 V; VSH = 0;
−
0.2
0.5
V
I
GH = 10 mA
VGL(H)
VGL(L)
Vd(boot)
low side output voltage HIGH
low side output voltage LOW
bootstrap diode voltage drop
IGL = 10 mA
IGL = 10 mA
I = 5 mA
10.8
−
12
−
V
V
V
0.2
1.8
0.5
2.1
1.5
Shut-down input pin SD
ISD
input current
VSD = 2.33 V
VI(CM) = 1 V
0
0.2
0.5
µA
VSD(th)
threshold level
2.26
2.33
2.40
V
Error amplifier pins I+, I−, VCO
II(CM)
VI(CM)
VI(offset)
gm
common mode input current
−
−0.1
−
−0.5
2.5
+2
µA
common mode input voltage
input offset voltage
transconductance
−
V
VI(CM) = 1 V; IVCO = −10 mA
−2
−
0
mV
µA/mV
dB
VI(CM) = 1 V; source only
330
70
−
Ao
open loop gain
RL = 10 kΩ to GND; VI(CM) = 1 V −
RL = 10 kΩ to GND; VI(CM) = 1 V −
−
GB
gain bandwidth product
5
−
MHz
V
VVCO(max) maximum output voltage
IVCO(max) maximum output current
operating; RL = 10 kΩ to GND
operating; VVCO = 1 V
IVCO = 0.3 mA
3.2
3.6
−0.5
2.50
4.0
−0.6
2.70
−0.4
mA
V
VVCO(start) output voltage during start-up
2.30
Notes
1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs.
Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Qg(tot) = 55 nC typ.) and these
will increase the supply current at 150 kHz according to the following formula:
∆IDD = 2 × Qg(tot) × fbridge = 2 × 55 nC × 150 kHz = 16.5 mA.
2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the
charge/discharge currents ICF(ch) and ICF(dis)
.
2001 Apr 25
11
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
APPLICATION INFORMATION
Practical values of the application example are given in
Fig.9 in which the measured oscillator frequency with
capacitor Cf = 220 pF is shown as a function of the charge
current IIRS. Note that the slope of the measured frequency
differs from the theoretical frequency (frequency set)
calculated as described in Section “Maximum frequency
resistor”.
An application example of a zero-voltage-switching
resonant converter application using TEA1610 is shown in
Fig.10. In the off-mode the VDD voltage is pulled below the
stop level of 9.4 V by the 7.5 V Zener diode and the
half-bridge is not driven. In the on-mode the TEA1610
starts-up with a high-ohmic bleeder resistor. After passing
the level for start of oscillation, the TEA1610 is in normal
operating mode and consumes the normal supply current
delivered by the 12 V supply. The dead time is set by Rdt
and Cf. The minimum frequency is adjusted by Rf(min) and
the frequency range is set by R∆f. The output voltage is
adjusted with a potentiometer connected to the inverting
input of the error amplifier and is regulated via a feedback
circuit. The shut-down input is used for overvoltage
protection. To prevent interference, filter capacitors can be
added on pins IFS, IRS and VREF. The maximum value of
each filter capacitor is 100 pF.
The measured dead time is directly related to charge
current (total current flowing into pin IRS) and therefore to
oscillator frequency.
The measured frequency graph can be used to determine
the required R∆f resistor for a certain maximum frequency
in an application with the same value of capacitor Cf.
More application information can be found in application
note “AN99011”.
MGW003
800
1200
dead time (low to high)
f
t
osc
dt
(kHz)
(ns)
dead time (high to low)
600
900
400
600
frequency set
frequency measured
200
300
0
0
200
0
20
40
60
80
100
120
140
160
180
(µA)
I
IRS
fosc at IIFS = 500 µA.
fosc = 2 × fbridge
.
Fig.9 Oscillator frequency and measured dead time as functions of charge current IIRS
.
2001 Apr 25
12
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ahdnbok,uflapegwidt
bridge voltage supply (high side)
12 V
R
VDD
output voltage
C
VDD
7.5 V
V
DD
11
V
8
7
DD(F)
on/off
bootstrap diode
GH
SH
LEVEL
SHIFTER
HIGH SIDE
DRIVER
L
p
TEA1610
L
r(ext)
C
6
boot
10
GL
LOW SIDE
DRIVER
C
C
r
p
4
PGND
SD
LOGIC
SUPPLY
15
power ground
overvoltage protection
signal
ground
SGND
9
2.33 V
2
÷
regulator
feedback
MGU339
+
−
I
I
SGND
2
1
gm
OSCILLATOR
3 V
14
ERROR
AMPLIFIER
0.6 V
12
13
16
V
3
VCO
IRS
IFS
CF
REF
C
f
R
R
R
dt
∆f
f(min)
C
SS
Fig.10 Application diagram.
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
PACKAGE OUTLINES
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
A
A
A
2
(1)
(1)
Z
1
w
UNIT
mm
b
b
c
D
E
e
e
L
M
M
H
1
1
E
max.
max.
min.
max.
1.40
1.14
0.53
0.38
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.10
7.62
0.30
0.254
0.01
2.2
0.021
0.015
0.013
0.009
0.86
0.84
0.32
0.31
0.055
0.045
0.26
0.24
0.15
0.13
0.37
0.33
inches
0.19
0.020
0.15
0.087
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-19
99-12-27
SOT38-1
050G09
MO-001
SC-503-16
2001 Apr 25
14
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height
SOT109-2
D
E
A
X
v
c
y
H
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
mm
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
0.20
0.05
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
1.65
1.27
0.050
1.05
0.041
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.008 0.057
0.002 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches
0.01 0.004
0.065
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT109-2
076E07
MS-012
2001 Apr 25
15
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
SOLDERING
Introduction
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
WAVE SOLDERING
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Through-hole mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
300 and 400 °C, contact may be up to 5 seconds.
Surface mount packages
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
MANUAL SOLDERING
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
2001 Apr 25
16
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
MOUNTING
PACKAGE
WAVE
REFLOW(1) DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
suitable(2)
−
suitable
Surface mount
BGA, HBGA, LFBGA, SQFP, TFBGA
not suitable
not suitable(3)
suitable
suitable
−
−
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, SMS
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
−
−
−
not recommended(4)(5) suitable
not recommended(6)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2001 Apr 25
17
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Apr 25
18
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
NOTES
2001 Apr 25
19
Philips Semiconductors – a worldwide company
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Internet: http://www.semiconductors.philips.com
72
SCA
© Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613502/01/pp20
Date of release: 2001 Apr 25
Document order number: 9397 750 07993
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