TEA1610T/N5,118 [NXP]
Zero-voltage-switching resonant LLC controller SOP 16-Pin;
| 型号： | TEA1610T/N5,118 |
| 厂家： | 
NXP |
| 描述： | Zero-voltage-switching resonant LLC controller SOP 16-Pin 开关 光电二极管 |
| 文件： | 总21页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a
zero-voltage switching resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down
function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
V
HS
V
DD
bridge voltage
supply
(high side)
MOSFET
SWITCH
HALF-
BRIDGE
CIRCUIT
TEA1610
RESONANT
CONVERTER
mgu336
signal
ground
power ground
Fig 1. Basic configuration
2. Features
I Integrated high voltage level-shift
I Transconductance error amplifier for
function
ultra high-ohmic regulation feedback
I Integrated high voltage bootstrap diode I Latched shut-down circuit for
overcurrent and overvoltage protection
I Adjustable minimum and maximum
I Low start-up current (green function)
I Adjustable dead time
frequencies
I Undervoltage lockout
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
3. Applications
I TV and monitor power supplies
I High voltage power supplies
4. Quick reference data
Table 1.
Symbol
VHS
Quick reference data
Parameter
Conditions
Min
0
Typ
-
Max
600
Unit
V
high side driver voltage
IGH(source)
high side output source
current
VDD(F) = 13 V;
−135
−180
−225
mA
VSH = 0 V;
GH = 0 V
V
IGL(source)
IGH(sink)
low side output source
current
VGL = 0 V
−135
−180
−225
mA
mA
high side output sink
current
VDD(F) = 13 V;
-
300
-
VSH = 0 V;
VGH = 13 V
IGL(sink)
low side output sink current VGL = 14 V
-
300
500
-
mA
[1]
fbridge(max)
maximum bridge frequency CF = 100 pF;
450
550
kHz
IIFS = 1 mA;
IIRS = 200 µA;
f OSC
fbridge
=
------------
2
[2]
VI(CM)
common mode input
voltage
-
-
2.5
V
[1] The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF
and the charge/discharge currents ICF(ch) and ICF(dis)
,
.
[2] This parameter applies specifically to the error amplifier.
5. Ordering information
Table 2.
Ordering information
Type number
Package
Name
DIP16
SO16
Description
Version
TEA1610P
TEA1610T
plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
plastic small outline package; 16 leads; body width 3.9 mm;
low stand-off height
SOT109-2
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
2 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
6. Block diagram
V
DD
11
8
V
DD(F)
BOOTSTRAP
7
6
SUPPLY
LEVEL
SHIFTER
HIGH SIDE
DRIVER
GH
SH
TEA1610
reset
10
4
LOW SIDE
DRIVER
GL
PGND
start/stop oscillation
LOGIC
15
SD
shut-down
start-up
9
2.33 V
SGND
÷2
2
1
×
+
2
I
charge
I
gm
−
I
OSCILLATOR
ERROR
AMPLIFIER
2.5 V
3 V
I
discharge
0.6 V
5
13
CF
16
14
VCO IRS
12
IFS
3
mgu337
V
n.c.
REF
Fig 2. Block diagram
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
3 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
7. Pinning information
7.1 Pinning
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I−
V
REF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I−
I+
V
REF
I+
VCO
PGND
n.c.
SD
IRS
CF
IFS
SD
IRS
CF
VCO
PGND
n.c.
TEA1610P
TEA1610T
IFS
SH
V
DD
SH
V
DD
GH
GL
GH
GL
V
SGND
DD(F)
V
SGND
DD(F)
001aaf866
001aaf867
Fig 3. Pin configuration for TEA1610P
Fig 4. Pin configuration for TEA1610T
7.2 Pin description
Table 3.
Pin description
Symbol
I-
Pin
1
Description
error amplifier inverting input
error amplifier non-inverting input
error amplifier output
I+
2
VCO
PGND
n.c.
3
4
power ground
5
not connected (high voltage spacer)
high side switch source
gate of the high side switch
floating supply voltage for the high side driver
signal ground
SH
6
GH
7
VDD(F)
SGND
GL
8
9
10
11
12
13
14
15
16
gate of the low side switch
supply voltage
VDD
IFS
oscillator discharge current input
oscillator capacitor
CF
IRS
oscillator charge current input
shut-down input
SD
VREF
reference voltage
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
4 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
8. Functional description
8.1 Start-up
When the applied voltage at VDD reaches VDD(initial) (see Figure 5), the low side power
switch is turned-on while the high side power switch remains in the non-conducting state.
This start-up output state guarantees the initial charging of the bootstrap capacitor (Cboot
)
used for the floating supply of the high side driver.
During start-up, the voltage on the frequency capacitor (Cf) is zero and defines the
start-up state. The output voltage of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80 % of the maximum frequency at the moment pin VDD reaches
the start level.
The start-up state is maintained until VDD reaches the start level (13.5 V), the oscillator is
activated and the converter starts operating.
V
V
DD(start)
DD(initial)
V
DD
0
GH-SH
0
GL
0
t
mgt998
Fig 5. Start-up
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
5 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
8.2 Oscillator
The internal oscillator is a current-controlled oscillator that generates a sawtooth output.
The frequency of the sawtooth is determined by the external capacitor Cf and the currents
flowing into the IFS and IRS pins.
The minimum frequency and the dead time are set by the capacitor Cf and resistors Rf(min)
and Rdt. The maximum frequency is set by resistor R∆f (see Figure 10). The oscillator
frequency is exactly twice the bridge frequency to achieve an accurate 50 % duty factor.
An overview of the oscillator and driver signals is given in Figure 6.
CF
GH-SH
0
GL
0
dead time (high to low)
dead time (low to high)
t
mgt999
Fig 6. Oscillator and driver signals
8.3 Dead time resistor
The dead time resistor Rdt is connected between the 3 V reference pin (VREF) and the IFS
current input pin (see Figure 10). The voltage on the IFS pin is kept constant at a
temperature independent value of 0.6 V. The current that flows into the IFS pin is
determined by the value of resistor Rdt and the 2.4 V voltage drop across this resistor. The
IFS input current equals the discharge current of capacitor Cf and determines the falling
slope of the oscillator.
The falling slope time is used to create a dead time (tdt) between two successive switching
actions of the half-bridge switches:
2.4V
Rdt
IIFS
=
-----------
C f × ∆VCf
tdt
=
--------------------------
IIFS
tIFS = tdt
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
6 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
8.4 Minimum frequency resistor
The Rf(min) resistor is connected between the VREF pin (3 V reference voltage) and the IRS
current input (held at a temperature independent voltage level of 0.6 V). The charge
current of the capacitor Cf is twice the current flowing into the IRS pin.
The Rf(min) resistor has a voltage drop of 2.4 V and its resistance defines the minimum
charge current (rising slope) of the Cf capacitor if the control current is zero. The minimum
frequency is defined by this minimum charge current (IIRS1) and the discharge current:
2.4V
Rf (min)
IIRS1
=
-----------------
C f × ∆VCf
tIRS1
=
--------------------------
2 × IIRS1
1
f osc(min)
=
-----------------------
tdt + tIRS1
f osc(min)
f bridge(min)
=
---------------------
2
8.5 Maximum frequency resistor
The output voltage is regulated by changing the frequency of the half-bridge converter.
The maximum frequency is determined by the R∆f resistor which is connected between
the error amplifier output VCO and the oscillator current input pin IRS. The current that
flows through the R∆f resistor (IIRS2) is added to the current flowing through the Rf(min)
resistor. As a result, the charge current ICF increases and the oscillation frequency
increases. As the falling slope of the oscillator is constant, the relationship between the
output frequency and the charge current is not a linear function (see Figure 7 and
Figure 9):
VVCO – 0.6
IIRS2
=
=
--------------------------
R∆f
C f × ∆VCf
--------------------------------------------
2 × (IIRS1 + IIRS2
tIRS2
)
The maximum output voltage of the error amplifier and the value of R∆f determine the
maximum frequency:
VVCO(max) – 0.6
IIRS2(max)
=
---------------------------------------
R∆f
C f × ∆VCf
tIRS(min)
=
---------------------------------------------------------
2 × (IIRS2 + IIRS2(max)
)
1
f osc(max)
=
------------
TOSC
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
7 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
f osc(max)
f bridge(max)
=
----------------------
2
TOSC = tIRS(min) + tIFS
Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies
both the dead time and the oscillator frequency show a decay.
The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak
voltage swing VCf and the charge and discharge currents. However, at higher frequencies
the accuracy decreases due to delays in the circuit.
f
osc
f
osc(max)
f
osc(start)
f
osc(min)
0
I
IRS
mgw001
Fig 7. Frequency range
8.6 Error amplifier
The error amplifier is a transconductance amplifier. Thus the output current at pin VCO is
determined by the amplifier transconductance and the differential voltage on input
pins I+ and I-. The output current IVCO is fed to the IRS input of the current-controlled
oscillator.
The source capability of the error amplifier increases current in the IRS pin when the
differential input voltage is positive. Therefore the minimum current is determined by
resistor Rf(min) and the minimum frequency setting is independent of the characteristics of
the error amplifier.
The error amplifier has a maximum output current of 0.5 mA for an output voltage up to
2.5 V. If the source current decreases, the oscillator frequency also decreases resulting in
a higher regulated output voltage.
During start-up, the output voltage of the amplifier is held at a constant value of 2.5 V. This
voltage level defines, together with resistor R∆f, the initial switching frequency of the
TEA1610 after start-up.
8.7 Shut-down
The shut-down input (SD) has an accurate threshold level of 2.33 V. When the voltage on
input SD reaches 2.33 V, both power switches immediately switch off and the TEA1610
enters shut-down mode.
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
8 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
During shut-down mode, pin VDD is clamped by an internal Zener diode at 12.0 V with
1 mA input current. This clamp prevents VDD rising above the rating of 14 V due to low
supply current to the TEA1610 in shut-down mode.
When the TEA1610 is in the shut-down mode, it can be activated again only by lowering
VDD below the VDD(reset) level (typically 5.3 V). The shut-down latch is then reset and a
new start-up cycle can commence (see Figure 8).
oscillation
shut-
down
supply
off
start-up
oscillation
V
V
DD(start)
DD(sdc)
V
DD
V
V
DD(reset)
SD(th)
SD
GH-SH
0
GL
0
t
mgw002
Fig 8. Shut-down
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
9 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
9. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Voltages
VHS
Parameter
Conditions
Min
Max
Unit
high side driver voltage
supply voltage
0
0
0
600
15
5
V
V
V
[1]
VDD
VI+
amplifier non-inverting input
voltage
VI-
amplifier inverting input voltage
shut-down input voltage
0
0
5
5
V
V
VSD
Currents
IIFS
oscillator falling slope input
current
-
-
-
1
mA
mA
mA
IIRS
oscillator rising slope input
current
1
IREF
VREF source current
−2
Power and temperature
Ptot
total power dissipation
Tamb < 70 °C
-
0.8
W
Tamb
ambient temperature
storage temperature
operating
−25
−25
+70
+150
°C
°C
Tstg
Handling
VESD
[2]
[3]
electrostatic discharge voltage
-
-
2000
200
V
V
[1] It is recommended that a 100 nF capacitor be placed as close as possible to the VDD pin (as indicated in
Figure 10, and in the application note).
[2] Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
[3] Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and 10 Ω
resistor.
10. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
100
K/W
Rth(j-pin)
thermal resistance from junction
to pin
50
K/W
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
10 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
11. Characteristics
Table 6.
Characteristics
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V
and Tamb = 25 °C; tested using the circuit shown in Figure 10, unless otherwise specified.
Symbol
High voltage pins VDD(F), GH and SH
IL leakage current
Supply pin VDD
Parameter
Conditions
Min
Typ
Max
30
5
Unit
µA
V
VDD(F), VGH and VSH = 600 V
low side on; high side off
-
-
-
VDD(initial)
supply voltage for
4
defined driver output
start oscillator voltage
stop oscillator voltage
VDD(start)
VDD(stop)
VDD(hys)
12.9
9.0
13.4
9.4
13.9
9.8
V
V
V
start-stop hysteresis
voltage
3.8
4.0
4.2
VDD(sdc)
shut-down clamp
voltage
low side off; high side off;
11.0
4.5
12.0
5.3
13.0
6.0
V
V
IDD = 1 mA
VDD(reset)
IDD
reset voltage
[1]
supply current:
low side on; high side off
Cf = 100 pF; IIFS = 0.5 mA;
I
IRS = 50 µA; Co = 200 pF
low side off; high side off;
DD = 9 V
V
start-up
130
180
2.4
220
-
µA
mA
µA
operating
shut-down
-
-
130
180
Reference voltage on pin VREF
VREF
reference voltage
current capability
output impedance
IREF = 0 mA
2.9
3.0
-
3.1
V
IREF
source only
−1.0
-
-
-
mA
Ω
Zo(VREF)
IREF = −1 mA
-
-
5.0
−0.3
temperature
coefficient
IREF = 0 mA; Tj = 25 to 150 °C
mV/K
∆VREF
-----------------
∆T
Current controlled oscillator pins IRS, IFS, CF
ICF(ch)(min)
minimum CF charge IIRS = 15 µA; VCF = 2 V
current
28
30
32
µA
µA
ICF(ch)(max) maximum CF charge IIRS = 200 µA; VCF = 2 V
340
380
420
current
VIRS
ICF(dis)(min) minimum CF
discharge current
voltage on pin IRS
IIRS = 200 µA
570
47
600
50
630
53
mV
IIRS = 50 µA; VCF = 2 V
µA
ICF(dis)(max) maximum CF
discharge current
IIFS = 1 mA; VCF = 2 V
0.93
0.98
1.03
mA
VIFS
voltage on pin IFS
IIFS = 1 mA
570
188
600
200
630
212
mV
fbridge(min)
minimum bridge
frequency (for stable
operation)
CF = 100 pF; IIFS = 0.5 mA;
kHz
f OSC
IIRS = 50 µA; fbridge =
------------
2
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
11 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
Table 6.
Characteristics …continued
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V
and Tamb = 25 °C; tested using the circuit shown in Figure 10, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[2]
fbridge(max)
maximum bridge
frequency
CF = 100 pF; IIFS = 1 mA;
450
500
550
kHz
f OSC
IIRS = 200 µA; fbridge
=
------------
2
VCF(L)
VCF(H)
VCf(p-p)
CF trip level LOW
CF trip level HIGH
DC level
DC level
-
1.27
3.0
-
V
V
V
-
-
Cf voltage
1.63
1.73
1.83
(peak-to-peak value)
tdt
dead time
Cf = 100 pF; IIFS = 0.5 mA;
IRS = 50 µA
0.37
0.40
0.43
µs
I
Output drivers
IGH(source)
IGH(sink)
IGL(source)
IGL(sink)
VGH(H)
high side output
source current
VDD(F) = 13 V; VSH = 0 V;
GH = 0 V
−135
−180
300
−180
300
12
−225
mA
mA
mA
mA
V
V
high side output sink VDD(F) = 13 V; VSH = 0 V;
current
-
-
VGH = 13 V
low side output
source current
VGL = 0 V
−135
−225
-
low side output sink
current
VGL = 14 V
-
high side output
voltage HIGH
VDD(F) = 13 V; VSH = 0 V;
10.8
-
-
I
GH = 10 mA
VDD(F) = 13 V; VSH = 0 V;
GH = 10 mA
VGH(L)
high side output
voltage LOW
0.2
0.5
-
V
I
VGL(H)
low side output
voltage HIGH
IGL = 10 mA
IGL = 10 mA
I = 5 mA
10.8
-
12
V
VGL(L)
low side output
voltage LOW
0.2
0.5
2.1
V
Vd(boot)
bootstrap diode
voltage drop
1.5
1.8
V
Shut-down input pin SD
ISD
input current
VSD = 2.33 V
0
0.2
0.5
µA
VSD(th)
threshold level
2.26
2.33
2.40
V
Error amplifier pins I+, I-, VCO
II(CM)
common mode input VI(CM) = 1 V
current
-
-
−0.1
−0.5
µA
VI(CM)
common mode input
voltage
-
2.5
V
VI(offset)
gm
input offset voltage
transconductance
open loop gain
VI(CM) = 1 V; IVCO = −10 mA
−2
-
0
+2
mV
VI(CM) = 1 V; source only
VI(CM) = 1 V
330
70
5
-
-
-
µA/mV
dB
[3]
[3]
Ao
-
GB
gain bandwidth
product
VI(CM) = 1 V
-
MHz
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
12 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
Table 6.
Characteristics …continued
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V
and Tamb = 25 °C; tested using the circuit shown in Figure 10, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[3]
VVCO(max)
maximum VCO
voltage
operating
3.2
3.6
4.0
V
IVCO(max)
maximum output
current
operating; VVCO = 1 V
IVCO = 0.3 mA
−0.4
−0.5
−0.6
mA
V
VVCO(start)
start VCO voltage
2.3
2.5
2.7
[1] The supply current IDD increases with increasing bridge frequency to drive the capacitive load of two MOSFETs. Typical MOSFETs for
the TEA1610 application are 8N50 (NXP type PHX80N50E, Qg(tot) = 55 nC typ.) and these will increase the supply current at 150 kHz
according to the following formula:
∆IDD = 2 × Qg(tot) × f bridge = 2 × 55nC × 150kHz = 16.5mA
[2] The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF, and the charge/discharge
currents ICF(ch) and ICF(dis)
.
[3] This parameter is tested with a resistor of 10 kΩ connected from pin VCO to GND.
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
13 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
12. Application information
An application example of a zero-voltage switching resonant converter application using
TEA1610 is shown in Figure 10. In the off-mode the VDD voltage is pulled below the stop
level of 9.4 V by the 7.5 V Zener diode and the half-bridge is not driven. In the on-mode
the TEA1610 starts-up with a high-ohmic bleeder resistor. After passing the level for start
of oscillation, the TEA1610 is in normal operating mode and consumes the normal supply
current delivered by the 12 V supply. The dead time is set by Rdt and Cf. The minimum
frequency is adjusted by Rf(min) and the frequency range is set by R∆f. The output voltage
is adjusted with a potentiometer connected to the inverting input of the error amplifier and
is regulated via a feedback circuit. The shut-down input is used for overvoltage protection.
To prevent interference, filter capacitors can be added on pins IFS, IRS and VREF. The
maximum value of each filter capacitor is 100 pF.
Practical values of the application example are given in Figure 9, in which the measured
oscillator frequency with capacitor Cf = 220 pF is shown as a function of the charge
current IIRS. Note that the slope of the measured frequency differs from the theoretical
frequency (frequency set) calculated as described in Section 8.5 “Maximum frequency
resistor”.
The measured dead time is directly related to the charge current (total current flowing into
pin IRS) and therefore to the oscillator frequency.
The measured frequency graph can be used to determine the required R∆f resistor for a
certain maximum frequency in an application with the same value of capacitor Cf.
More application information can be found in application note AN99011.
mgw003
1200
800
dead time (low to high)
f
t
dt
osc
(kHz)
(ns)
dead time (high to low)
600
900
400
200
0
600
300
0
frequency set
frequency measured
0
40
80
120
160
200
I
(µA)
IRS
(1) fOSC at IIFS = 500 mA.
(2) fOSC = 2 x fbridge
.
Fig 9. Oscillator frequency and measured dead time as functions of charge current IIRS
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
14 of 21
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xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
bridge voltage supply (high side)
12 V
R
VDD
output voltage
C
VDD
7.5 V
V
DD
11
V
DD(F)
8
7
on/off
bootstrap diode
GH
SH
LEVEL
SHIFTER
HIGH SIDE
DRIVER
L
p
TEA1610
L
r(ext)
C
boot
6
10
GL
LOW SIDE
DRIVER
C
p
C
r
4
PGND
SD
LOGIC
SUPPLY
15
power ground
overvoltage protection
signal
ground
SGND
9
2.33 V
÷2
regulator
feedback
mgu339
I+
SGND
2
1
gm
I−
OSCILLATOR
3 V
ERROR
0.6 V
12
AMPLIFIER
13
16
14
IRS
3
VCO
V
IFS
CF
REF
C
f
R
∆f
R
f(min)
R
dt
C
SS
Fig 10. Application diagram
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
13. Test information
13.1 Quality information
The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
16 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
14. Package outline
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
c
D
E
e
e
L
M
M
H
1
1
E
max.
max.
min.
max.
1.40
1.14
0.53
0.38
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.1
7.62
0.3
0.254
0.01
2.2
0.021
0.015
0.013
0.009
0.86
0.84
0.32
0.31
0.055
0.045
0.26
0.24
0.15
0.13
0.37
0.33
inches
0.19
0.02
0.15
0.087
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-13
SOT38-1
050G09
MO-001
SC-503-16
Fig 11. Package outline SOT38-1 (DIP16)
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
17 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height
SOT109-2
D
E
A
X
v
c
y
H
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
mm
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
0.20
0.05
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
1.65
1.27
0.05
1.05
0.041
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.008 0.057
0.002 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches
0.01 0.004
0.065
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-19
SOT109-2
076E07
MS-012
Fig 12. Package outline SOT109-2 (SO16)
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
18 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
15. Revision history
Table 7.
Revision history
Document ID
TEA1610T_P_3
Modifications:
TEA1610T_P_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20070326
Product data sheet
-
TEA1610T_P_2
• In Table 4 “Limiting values”, maximum value for VDD changed from 14 V to 15 V.
20070206 Product data sheet TEA1610T_P_1
-
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Equations modified in Section 8.4 “Minimum frequency resistor” and Section 8.5 “Maximum
frequency resistor”.
TEA1610T_P_1
20010425
Product specification
-
-
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
19 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
16.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
17. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
20 of 21
TEA1610P; TEA1610T
NXP Semiconductors
Zero-voltage-switching resonant converter controller
18. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
Functional description . . . . . . . . . . . . . . . . . . . 5
Start-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Dead time resistor. . . . . . . . . . . . . . . . . . . . . . . 6
Minimum frequency resistor . . . . . . . . . . . . . . . 7
Maximum frequency resistor. . . . . . . . . . . . . . . 7
Error amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Shut-down. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal characteristics. . . . . . . . . . . . . . . . . . 10
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 11
Application information. . . . . . . . . . . . . . . . . . 14
Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
Quality information . . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19
10
11
12
13
13.1
14
15
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 March 2007
Document identifier: TEA1610T_P_3
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