TEA5762H [NXP]

Self Tuned Radio STR; 自调谐收音机STR
TEA5762H
型号: TEA5762H
厂家: NXP    NXP
描述:

Self Tuned Radio STR
自调谐收音机STR

消费电路 商用集成电路 接收器集成电路
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INTEGRATED CIRCUITS  
DATA SHEET  
TEA5762  
Self Tuned Radio (STR)  
Product specification  
1999 Aug 04  
Supersedes data of 1995 Jun 23  
File under Integrated Circuits, IC01  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
FEATURES  
High impedance MOSFET input on AM  
Wide supply voltage range of 2.5 to 12 V  
The tuning system has an optimized IC partitioning both  
from application (omitting interferences) and flexibility  
(removable front panel option) point of view: the tuning  
synthesizer is on-chip with the radio  
Low current consumption 18 mA at AM and FM  
(including tuning synthesizer for AM)  
Low noise figure  
The tuning quality is superior and requires no IF-counter  
for stop-detection; it is insensitive to ceramic filter  
tolerances  
Low output distortion  
Due to the new tuning concept, the tuning is  
independent of the channel spacing.  
In combination with the microcontroller, fast, low-power  
operation of preset mode, manual-search, auto-search  
and auto-store are possible  
GENERAL DESCRIPTION  
The local (internal) controller function facilitates reduced  
and simplified microcontroller software  
The TEA5762 is a 44-pin integrated AM-radio and FM-IF  
and demodulator part including a novel tuning concept.  
The radio part is based on the TEA5712.  
The high integration level means fewer external  
components with regard to the communication between  
the radio and the microcontroller and a simple and small  
Printed-Circuit Board (PCB)  
It is designed for the use with an external FM front-end.  
The new tuning concept combines the advantages of hand  
tuning with electronic facilities and features. User  
‘intelligence’ is incorporated into the tuning algorithm and  
an improvement of the analog signal processing is used for  
the AFC function.  
The inherent FUZZY LOGIC behaviour of the Self  
Tuned Radio (STR), which mimics hand tuning and  
yields a potentially fast yet reliable tuning operation  
The level of the incoming signal at which the radio must  
lock is software programmable  
Two programmable ports  
FM-on/off port to control the external FM front-end  
High selectivity with distributed IF gain  
Soft mute  
Signal dependent stereo-blend  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
TEA5762H  
QFP44  
plastic quad flat package; 44 leads (lead length 1.3 mm);  
SOT307-2  
body 10 × 10 × 1.75 mm  
1999 Aug 04  
2
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.5  
TYP.  
MAX.  
UNIT  
VCC1  
VCC2  
Vtune  
ICC1  
12  
12  
V
supply voltage for tuning  
tuning voltage  
V
0.7  
12  
13  
V
CC2 0.75  
V
supply current  
AM mode  
15  
16  
3.3  
2.7  
18  
19  
mA  
mA  
mA  
mA  
µA  
FM mode  
AM mode  
FM mode  
IDD  
supply current  
ICC2  
supply current for tuning in preset  
mode (band-end to band-end)  
800  
Tamb  
ambient temperature  
15  
+60  
°C  
AM performance; note 1  
V10  
Vi1  
AF output voltage  
Vi1 = 5 mV  
S/N = 26 dB  
Vi1 = 1 mV  
36  
40  
45  
55  
0.8  
70  
70  
2.0  
mV  
µV  
%
RF sensitivity input voltage  
total harmonic distortion  
THD  
FM performance; note 2  
V10  
Vi4  
AF output voltage  
Vi4 = 5 mV  
40  
48  
20  
57  
30  
mV  
IF sensitivity input voltage  
V10 = 3 dB; V10 = 0 dB  
µV  
at Vi4 = 10 mV  
THD  
total harmonic distortion  
IF filter  
0.3  
0.8  
%
SFE10.7MS3A20K-A  
MPX performance; note 3  
αcs  
channel separation  
Vi4 = 30 mV  
26  
30  
dB  
Notes  
1. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 1 MHz; m = 0.3; fmod = 1 kHz; measured in Fig.9 with S1 in position A; S2  
in position B; unless otherwise specified.  
2. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 10.7 MHz; fm = 22.5 kHz; fm = 1 kHz; measured in Fig.9 with S2 in  
position A; S3 in position A; unless otherwise specified.  
3. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; fi = 1 kHz; measured in Fig.9 with S2 in  
position B; S3 in position B; unless otherwise specified.  
1999 Aug 04  
3
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FM-IFI2  
WRITE-  
ENABLE  
DATA  
BUS-  
CLOCK  
IFGND FMDEM FSI  
FM-IFI1  
37  
FM-IFO1  
35  
33  
29  
28  
27  
17  
18  
21  
16  
PILFIL  
MO/ST  
39  
TUNER  
SWITCH  
FM  
IF1  
FM  
IF2  
FM  
DETECTOR  
PILOT  
DETECTOR  
FM-ON/OFF  
24  
12  
19 kHz  
PLL  
38 kHz  
DECODER  
stereo  
LFI  
V
38  
34  
7
STAB(A)  
VCO  
V
AM/FM  
INDICATOR  
STAB(B)  
9
STATUS  
REGISTER  
V
CC1  
SHIFT REGISTER  
STABILIZER  
23  
1
V
DDD  
RIPPLE  
up  
IN-LOCK  
down DETECTOR  
level  
14  
AFLO  
AFRO  
LAST-STATION  
MEMORY  
5
4
MATRIX  
COUNTI  
PRESCALER  
15  
13  
stereo mono  
FM  
SEQUENTIAL  
CIRCUIT  
CHARGE  
PUMP  
SDS  
PROGRAMMABLE  
COUNTER  
AM  
CGND  
MULTIPLEXER  
MUTE  
MUTE  
hard mute  
AFC  
level  
25  
26  
XTAL  
CRYSTAL  
OSCILLATOR  
WINDOW  
DETECTOR  
TEA5762  
19  
20  
32  
DGND  
AFC  
(n)  
AFC  
(p)  
AFC  
AM  
FRONT  
END  
2
V/I  
CONVERTER  
AM  
AM  
MIXER  
AM  
IF  
AM  
DETECTOR  
AGC  
AM-RFI  
OSCILLATOR  
6
40 41  
36  
44  
31  
30  
8
22 10  
42  
11  
3
MBE815  
AMOSC  
AM-MIXER  
AM-IFI/O2  
AGC  
P1 P0  
TUNE  
AFO RFGND MPXI RFGND  
V
AM-IFI1  
CC2  
ahdnbok,uflapegwidt  
Fig.1 Block diagram.  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
RIPPLE  
AM-RFI  
RFGND  
CGND  
1
ripple capacitor input  
AMRF input  
2
3
RF ground and substrate  
counter ground  
4
COUNTI  
AMOSC  
VCC1  
5
counter input  
6
parallel tuned AM-oscillator circuit to ground  
supply voltage  
7
TUNE  
8
tuning output current  
VCO  
9
voltage controlled oscillator input  
AM/FM AF output (output impedance typical 5 k)  
stereo decoder input (input impedance typical 150 k)  
loop filter input  
AFO  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
MPXI  
LFI  
MUTE  
mute input  
AFLO  
left channel output (output impedance typical 4.3 k)  
right channel output (output impedance typical 4.3 k)  
pilot detector filter input  
AFRO  
PILFIL  
IFGND  
FMDEM  
AFC(n)  
AFC(p)  
FSI  
ground of IF, detector and MPX stage  
ceramic discriminator input  
AFC negative output  
AFC positive output  
field strength indicator  
VCC2  
supply voltage for tuning  
VDDD  
digital supply voltage  
MO/ST  
XTAL  
mono/stereo and tuning indication output  
crystal input  
DGND  
BUS-CLOCK  
DATA  
digital ground  
bus-clock input  
bus data input/output  
WRITE-ENABLE  
P0  
bus write-enable input  
programmable output port (P0)  
programmable output port (P1)  
450 kHz LC-input circuit for AM AFC  
FMIF input 2 (input impedance typical 330 )  
internal stabilized supply voltage (B)  
FMIF output 1 (input impedance typical 330 )  
input/output to IFT; output: current source  
FMIF input 1 (input impedance typical 330 )  
internal stabilized supply voltage (A)  
FM ON/OFF port  
P1  
AFC  
FM-IFI2  
VSTAB(B)  
FM-IFO1  
AM-IFI/O2  
FM-IFI1  
VSTAB(A)  
FM-ON/OFF  
AM-MIXER  
open-collector output to IFT  
1999 Aug 04  
5
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
SYMBOL  
PIN  
DESCRIPTION  
AM-IFI1  
RFGND  
n.c.  
41  
42  
43  
44  
IFT or ceramic filter input (input impedance typical 3 k)  
FMRF ground  
not connected  
AGC  
AGC capacitor input  
RIPPLE  
AM-RFI  
RFGND  
CGND  
1
2
3
4
5
6
7
8
9
33 FM-IFI2  
32  
31  
30  
AFC  
P1  
P0  
COUNTI  
AMOSC  
29 WRITE-ENABLE  
TEA5762H  
28  
27  
26  
DATA  
V
BUS-CLOCK  
CC1  
TUNE  
VCO  
DGND  
25 XTAL  
AFO 10  
MPXI 11  
24 MO/ST  
23 V  
DDD  
MBE820  
Fig.2 Pin configuration.  
6
1999 Aug 04  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
FUNCTIONAL DESCRIPTION  
PRESET OPERATION  
The TEA5762 is an integrated radio circuit with  
AM-receiver and FM-IF part with demodulator and stereo  
decoder. The circuit includes digital tuning and control  
functions.  
In preset mode, the microcontroller has to load information  
such as frequency band, frequency and mono/stereo. This  
information has to be sent via the bus to the STR.  
The internal algorithm controls the tuning sequence as  
follows:  
The radio  
1. The information is loaded into a shift register, a  
last-station memory and the counter.  
The AM circuit incorporates a double balanced mixer, a  
one-pin low-voltage oscillator (up to 30 MHz) and is  
designed for distributed selectivity.  
2. The Automatic Frequency Control (AFC) is switched  
off.  
3. The counter starts counting the VCO frequency and  
the tuning voltage is varied until the desired frequency  
roughly equals the real frequency.  
The AM input is designed to be connected to the top of a  
tuned circuit. AGC controls the IF amplification and for  
large signals it lowers the input impedance of the AM  
front-end.  
4. The AFC is then switched on and the counter is  
switched off.  
The first AM selectivity can be an IF-Tank (IFT) as well as  
an IFT combined with a ceramic filter; the second one is an  
IFT.  
5. The real frequency is more precisely tuned to the  
desired frequency.  
For FM operation an external FM front-end is necessary.  
This is switched on and off by the FM-ON/OFF signal  
which is generated in the bus system.  
After the AFC has tuned the real frequency to the desired  
frequency an in-lock signal can be generated. In order to  
get a reliable in-lock signal, there are two parameters  
measured: the field strength and the S-curve. The field  
strength indicates the strength of the station and by  
looking at the S-curve the system can distinguish false  
in-locks from real in-locks (false in-locks occur on the  
wrong slope of the S-curve).  
The AFC circuit in the TEA5762 provides a tuning voltage  
to drive the VCO of the external FM front-end.  
The frequency of the external VCO is counted in the Self  
Tuned Radio (STR) tuning system.  
The FM-IF circuit is designed for distributed IF ceramic  
filters. The FM quadratic detector uses a ceramic  
resonator.  
In the FM mode the tuning voltage controls the VCO of the  
external FM front-end and the frequency of the VCO is  
counted in the TEA5762.  
The PLL stereo decoder incorporates a signal dependent  
stereo-blend circuit and a soft-mute circuit.  
In the event of fading or pulling the in-lock signal becomes  
logic 0 and the synthesizer will be switched-on again and  
the algorithm will be repeated.  
Tuning  
SEARCH OPERATION  
The tuning-concept of Self Tuned Radio (STR) is based on  
FUZZY LOGIC: it mimics hand tuning (hand tuning is a  
combination of coarse and fine tuning to the qualitatively  
best frequency position). As a consequence the tuning  
system is very fast.  
During a search operation, the only action the  
microcontroller has to take is: sending the desired band  
plus the direction and the search sensitivity level to the  
STR. The search operation is performed by the charge  
pump until an in-lock signal is generated (combination of  
measuring the field strength and the S-curve). The AFC  
then fine tunes to the station. The frequency belonging to  
the found station will be counted by the counter and written  
into the last-station memory and the shift register of the  
counter. At this time the frequency is available in the shift  
register and can be read by the microcontroller. The  
microcontroller decides whether the frequency is within the  
desired frequency band. If so, this frequency can be stored  
under a preset and if not, a new search action should be  
started.  
The tuning algorithm, which is controlled by the sequential  
circuit (see Fig.1), is completely integrated; so there are  
only a few external components needed.  
The bus and the microcontroller can be kept very simple.  
The bus only consists of three wires (BUS-CLOCK, DATA  
and WRITE-ENABLE). The microcontroller must basically  
give two instructions:  
Preset operation  
Search operation.  
1999 Aug 04  
7
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
To ensure that the search function operates correctly  
under all conditions the following search sequence must  
be applied:  
These three signals, together with the mono/stereo pin  
(MO/ST; pin 24), communicate with the microcontroller.  
The mono/stereo indicator has two functions, which are  
controlled by the BUS-CLOCK, as shown in Table 2.  
Store the current frequency in the memory  
Issue the search command  
Table 2 Bus-clock functions  
Wait for data valid and read the new frequency  
BUS-CLOCK  
MO/ST (PIN 24)  
RESULT  
stereo  
If the new frequency is the same as the stored  
frequency, issue a pre-set step (e.g. 50 kHz) and start  
the search sequence again.  
LOW  
LOW  
HIGH  
HIGH  
LOW  
HIGH  
LOW  
HIGH  
mono  
tuned  
Description of the bus  
not tuned  
The TEA5762 radio has a bus which consists of three  
wires, as shown in Table 1.  
The TEA5762 has a 25-bit shift register; see Table 3 for an  
explanation of the shift register bits.  
Table 1 Bus signals  
If in search mode no transmitter can be found, all  
frequency bits of the shift register are set to logic 0.  
SIGNAL  
DESCRIPTION  
PIN  
BUS-CLOCK  
DATA  
software driven clock input  
data input/output  
27  
28  
29  
The bus protocol is depicted in Figs 3 and 4.  
WRITE-ENABLE write/read-input  
Table 3 Explanation of the shift register bits  
LOGIC  
STATE  
BIT  
DESCRIPTION  
RESULT  
S.24 (MSB)  
search start/end  
0
1
0
1
0
1
after a search when a station is found or after a preset  
during the search action  
D.23  
M.22  
search up/down  
mono/stereo  
indicates if the radio has to search down  
indicates if the radio has to search up  
stereo is allowed  
mono is required (radio switched to forced mono)  
selects FM/MW/LW/SW band  
B0.21  
B1.20  
P0.19  
band  
band  
port  
see Table 4  
see Table 4  
note 1  
selects FM/MW/LW/SW band  
user programmable bits which e.g. can be used as band  
switch driver  
P1.18  
S0.17  
S1.16  
port  
note 1  
user programmable bits which e.g. can be used as band  
switch driver  
search-level of station  
search-level of station  
see Table 5  
see Table 5  
determines the locking field strength during an  
automatic search, automatic store or manual search  
determines the locking field strength during an  
automatic search, automatic store or manual search  
15  
dummy  
buffer  
F.14 to F.0 (LSB)  
frequency  
determine the tuning frequency of the radio; see Table 6  
for the bit values  
1999 Aug 04  
8
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
Note  
Table 6 Values for bits 14 to 0  
1. The output pins 30 and 31 can drive currents up to  
5 mA; bits 19 (P0) and 18 (P1) control the output  
voltage of the control pins P0 (pin 30) and P1 (pin 31):  
FM  
VALUE(1)  
(kHz)  
AM  
VALUE(2)  
(kHz)  
BIT  
BIT VALUE  
a) Bit 19 (P0) LOW sets P0 (pin 30) to LOW.  
b) Bit 19 (P0) HIGH sets P0 (pin 30) to HIGH.  
c) Bit 18 (P1) LOW sets P1 (pin 31) to LOW.  
d) Bit 18 (P1) HIGH sets P1 (pin 31) to HIGH.  
14  
13  
12  
11  
10  
9
214  
213  
212  
211  
210  
29  
28  
27  
26  
25  
102400  
51200  
25600  
12800  
6400  
3200  
1600  
800  
16384  
8192  
4096  
2048  
1024  
512  
256  
128  
64  
Table 4 Truth table for bits 21 and 20  
B0  
0
B1  
0
BAND SELECT  
8
FM(1)  
MW  
LW  
7
0
1
6
1
0
5
400  
32  
1
1
SW  
4
24  
200  
16  
3
23  
22  
21  
100  
8
Note  
2
50  
4
1. When FM is selected, the control output FM-ON/OFF  
is set LOW to switch on the external FM front-end.  
1
25  
2
0
20  
12.5  
1
Table 5 Truth table for bits 16 and 17  
Notes  
SIGNAL RECEPTION(1)  
1. FM value of the affected oscillators:  
FM VALUE = FMRF + FMIF.  
S1  
S0  
FM IF INPUT  
AM RF INPUT  
(µV)  
(µV)  
2. AM value of the affected oscillators:  
AM VALUE = AMRF + AMIF.  
0
0
1
1
0
1
0
1
>50  
>100  
>300  
>1500  
>28  
>40  
>63  
>1000  
Note  
1. The given values for signal reception are  
corresponding to a 3 dB point of 20 µV for FM.  
1999 Aug 04  
9
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
READING DATA  
WRITING DATA  
While WRITE-ENABLE is LOW data can be read by the  
microcontroller. At a rising edge of the BUS-CLOCK, data  
is shifted out of the register. This data is available from the  
point where the BUS-CLOCK is HIGH until the next rising  
edge of the BUS-CLOCK occurs (see Fig.3).  
While WRITE-ENABLE is HIGH the microcontroller can  
transmit data to the TEA5762 (hard mute is active). At a  
rising edge of the BUS-CLOCK, the register shifts and  
accepts one bit into LSB. At clock LOW the microcontroller  
writes data (see Fig.4).  
To read the entire shift register 24 clock pulses are  
necessary.  
To write the entire shift register 25 clock pulses are  
necessary.  
WRITE-ENABLE  
data read  
BUS-CLOCK  
DATA  
data available  
MBE817  
data available after search ready  
MSB is LOW  
data shift  
Fig.3 Read data.  
WRITE-ENABLE  
BUS-CLOCK  
DATA  
MBE818  
data shift  
data change  
Fig.4 Write data.  
10  
1999 Aug 04  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
BUS TIMING  
WRITE-ENABLE  
V
IH  
BUS-CLOCK  
V
IL  
t
t
HIGH LOW  
DATA  
MBE819  
t
da  
Fig.5 Bus timing.  
Table 7 Digital inputs  
SYMBOL  
PARAMETER  
MIN.  
MAX.  
UNIT  
Digital inputs  
VIH  
VIL  
HIGH-level input voltage  
LOW-level input voltage  
1.4  
V
V
0.6  
Timing  
fclk  
clock input  
300  
kHz  
µs  
tHIGH  
tLOW  
tda  
clock HIGH time  
clock LOW time  
1.67  
1.67  
µs  
shift register available after ‘search ready’  
14  
µs  
1999 Aug 04  
11  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VCC1  
Ptot  
Tstg  
Tamb  
Tj  
supply voltage  
0
13.2  
250  
V
total power dissipation  
Tamb = 70 °C  
mW  
°C  
°C  
°C  
V
storage temperature  
65  
15  
15  
+150  
+60  
operating ambient temperature  
operating junction temperature  
electrostatic handling for all pins  
+150  
±200  
Ves  
note 1  
Note  
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 series resistor.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient in free air  
65  
K/W  
1999 Aug 04  
12  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
CHARACTERISTICS  
VCC1 = 3 V; Tamb = 25 °C; unless otherwise specified.  
SYMBOL  
VCC1  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.5  
TYP.  
MAX.  
UNIT  
12  
12  
12  
V
VCC2  
VDDD  
Vtune  
ICC2  
supply voltage for tuning  
supply voltage for digital part  
tuning voltage  
V
V
2.5  
0.7  
V
CC2 0.75 V  
supply current for tuning in preset  
mode (band-end to band-end)  
800  
µA  
fBUS-CLOCK(max) maximum BUS-CLOCK frequency  
ICC1 current consumption during acquisition AM mode  
300  
18  
18.5  
kHz  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
s
12  
12.5  
15  
of VCC1  
FM mode  
15.5  
4.8  
5.5  
15  
IDD  
current consumption during acquisition AM mode  
of IDD  
FM mode  
ICC1  
current consumption after acquisition  
of VCC1  
AM mode  
FM mode  
AM mode  
FM mode  
12  
13  
18  
19  
16  
IDD  
current consumption after acquisition  
of IDD  
3.2  
2.7  
tsearch  
tacq  
synthesizer auto-search time for empty FM mode  
band  
10  
synthesizer preset acquisition time  
between two band limits  
FM  
100  
100  
200  
500(1)  
ms  
MW  
ms  
LW  
ms  
SW  
ms  
fband  
frequency band range of the  
synthesizer  
AM mode  
0.144  
30  
MHz  
fFM  
AFC inaccuracy of FM  
with Mitsumi  
front-end  
1
kHz  
fAM  
AFC inaccuracy of AM  
100  
Hz  
IP0/P1(sink)  
sink current of software programmable VCC1 = 5 V  
output P0/P1  
4
6
mA  
IP0/P1(source)  
source current of software  
programmable output P0/P1  
VCC1 = 5 V  
5
9
mA  
Note  
1. Depending on band.  
1999 Aug 04  
13  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
AM CHARACTERISTICS  
Input frequency = 1 MHz; m = 0.3; fmod = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;  
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input  
level; refer to test circuit (see Fig.9); unless otherwise specified.  
SYMBOL  
V10  
PARAMETER  
AF output voltage  
CONDITIONS  
Vi1 = 5 mV  
MIN.  
36  
TYP.  
45  
MAX.  
70  
UNIT  
mV  
Vi1  
Vil  
RF sensitivity  
S/N = 26 dB  
40  
55  
70  
µV  
large signal voltage handling  
capacity  
m = 0.8; THD 8%  
150  
300  
mV  
PSRR  
power supply ripple rejection  
V10  
V7 = 100 mV (RMS);  
100 Hz; V7 = 3.0 V  
47  
dB  
----------  
V7  
Ii  
input current (pin 2)  
V44 = 0.2 V  
V44 = 0.2 V  
V44 = 0.2 V  
0
µA  
pF  
dB  
dB  
dB  
%
Ci  
Gc  
input capacitance (pin 2)  
front-end conversion gain  
4
5
10  
14  
50  
0.8  
56  
14  
0
V44 = 0.9 V  
26  
S/N  
signal-to-noise ratio  
total harmonic distortion  
IF suppression  
THD  
α450  
Vi1 = 1 mV  
2.0  
V10 = 30 mV  
dB  
FM-IF CHARACTERISTICS  
Input frequency = 10.7 MHz; f = 22.5 kHz; fmod = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;  
refer to test circuit (see Fig.9); unless otherwise specified.  
SYMBOL  
V10  
PARAMETER  
AF output voltage  
CONDITIONS  
Vi4 = 10 mV  
MIN.  
40  
TYP.  
48  
MAX.  
57  
UNIT  
mV  
Vi4  
IF limiting sensitivity  
V10 = 3 dB; V10 = 0 dB at  
50  
80  
µV  
Vi4 = 10 mV  
PSRR  
power supply ripple rejection  
V10  
V7 = 100 mV (RMS);  
100 Hz; V7 = 3.0 V  
44  
dB  
----------  
V7  
S/N  
signal-to-noise ratio  
Vi4 = 10 mV  
62  
dB  
%
THD  
total harmonic distortion  
IF filter SFE10.7MS3A20K-A −  
0.3  
0.8  
1999 Aug 04  
14  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
STEREO DECODER CHARACTERISTICS  
Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF-signal of 100 mV to front-end to set radio to  
maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.  
SYMBOL  
PARAMETER  
AF output voltage  
CONDITIONS  
MIN.  
TYP.  
160  
MAX. UNIT  
V14/15  
mV  
mV  
mV  
dB  
dB  
%
Vpilot(s)  
Vpilot(m)  
switch to stereo  
switch to mono  
8
12  
2
5
VAF-L/Vi3 MPX voltage gain  
1.5  
+1.5  
S/N  
THD  
αcs  
α19  
α38  
α
signal-to-noise ratio  
V
pilot = 15.5 mV (stereo)  
74  
0.5  
30  
32  
21  
30  
1
total harmonic distortion  
channel separation  
1.0  
26  
27  
16  
22  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
carrier and harmonic suppression  
19 kHz (200 mV) = 0 dB  
38 kHz  
stereo-blend  
Vi4 = 5 mV  
Vi4 = 200 µV  
2
mute(s)  
soft mute depth  
Vi4 = 30 µV; V14 = V15  
Vi4 = 10 µV; V14 = V15  
1  
0
6  
10  
TUNING CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
VFM  
FM voltage levels  
α
α
α
3 dB-point at Vi4 = 20 µV  
S0 = 1; S1 = 1  
high (auto-store/search)  
medium (auto-store/search)  
low (auto-store/search)  
600  
100  
40  
1500  
300  
100  
50  
5000  
550  
200  
90  
µV  
µV  
µV  
µV  
S0 = 0; S1 = 1  
S0 = 1; S1 = 0  
nominal (preset mode/tuning indication)  
AM voltage levels  
S0 = 0; S1 = 0  
30  
VAM  
3 dB-point at Vi4 = 20 µV  
S0 = 1; S1 = 1  
high (auto-store/search)  
medium (auto-store/search)  
low (auto-store/search)  
400  
50  
1000  
63  
2500  
80  
µV  
µV  
µV  
µV  
S0 = 0; S1 = 1  
S0 = 1; S1 = 0  
32  
40  
50  
nominal (preset mode/tuning indication)  
AFC voltage off mode  
S0 = 0; S1 = 0  
25  
28  
40  
VAFC(off)  
mute(h)  
3 dB-point at Vi4 = 20 µV  
FM mode  
3
µV  
µV  
dB  
AM mode  
25  
60  
hard mute  
WRITE-ENABLE = HIGH  
1999 Aug 04  
15  
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(dBµV)  
20  
0
20  
40  
60  
80  
100  
120  
10  
9
THD  
(dB)  
0
(%)  
8
7
6
5
4
3
2
1
0
(1)  
10  
20  
30  
40  
50  
60  
70  
80  
(2)  
(3)  
7  
6  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
10  
10  
1
V
(V)  
i1  
MBE853  
(1) Audio signal.  
(2) Noise.  
(3) Harmonic distortion.  
Fig.6 AM mode.  
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0
(dBµV)  
20  
40  
60  
80  
100  
120  
10  
(dB)  
0
9
THD  
(1)  
(%)  
8
7
6
5
4
3
2
1
0
(3)  
(4)  
10  
20  
30  
40  
50  
60  
70  
80  
(2)  
(5)  
(6)  
(7)  
6  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
10  
1
V
(V)  
i1  
MBE854  
(1) Mono signal.  
(2) Noise in mono mode.  
(3) Left channel with modulation left.  
(4) Right channel with modulation left.  
(5) Noise in stereo mode.  
(6) Harmonic distortion f = 75 kHz.  
(7) Total harmonic distortion f = 22.5 kHz.  
Fig.7 FM mode.  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
INTERNAL CIRCUITRY  
Table 8 Equivalent pin circuits and pin voltages  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
1
RIPPLE  
2.1  
2.1  
7
1
1 k  
3 kΩ  
70 pF  
MBE821  
17  
2
AM-RFI  
0
0
4
2
MBE822  
3
4
5
RFGND  
CGND  
0
0
0
0
COUNTI  
5
4
MBE823  
6
AMOSC  
0
0
6
4
MBE824  
7
VCC1  
3.0  
3.0  
1999 Aug 04  
18  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
8
TUNE  
22  
8
MBE825  
26  
9
VCO  
1.3  
0.95  
1 k  
9
10 kΩ  
MBE826  
17  
10  
AFO  
0.6  
0.7  
10  
5 k  
MBE827  
17  
11  
MPXI  
1.23  
1.23  
150 k  
150 kΩ  
11  
17  
9.5 kΩ  
MBE828  
1999 Aug 04  
19  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
12  
LFI  
0.1  
0.8  
4 k  
13 kΩ  
12  
17  
MBE829  
13  
14  
15  
MUTE  
AFLO  
AFRO  
0.7  
0.7  
7 k50 kΩ  
13  
17  
MBE830  
0.65  
0.65  
14  
5 k  
MBE831  
17  
0.65  
0.65  
15  
17  
5 k  
MBE832  
1999 Aug 04  
20  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
16  
PILFIL  
0.95  
0.95  
16  
17  
10 k  
10 kΩ  
MBE833  
17  
18  
IFGND  
0
0
FMDEM  
1.0  
180  
18  
17  
910 Ω  
MBE834  
19  
20  
AFC(n)  
AFC(p)  
10 kΩ  
10 kΩ  
19/20  
MBE835  
21  
FSI  
1.4 V  
40 kΩ  
21  
26  
12 to 34 kΩ  
(dependent on  
bits 16 and 17)  
MBE836  
22  
23  
VCC2  
VDDD  
3.0  
3.0  
1999 Aug 04  
21  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
24  
MO/ST  
100  
24  
MBE837  
26  
25  
XTAL  
50 k  
50 kΩ  
50 kΩ  
25  
26  
MBE838  
26  
27  
DGND  
0
0
BUS-CLOCK  
27  
26  
MBE839  
28  
29  
DATA  
100  
28  
WRITE-  
ENABLE  
100 kΩ  
50 kΩ  
29  
26  
MBE840  
1999 Aug 04  
22  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
30  
P0  
23  
120 Ω  
100 kΩ  
30  
26  
20 kΩ  
MHA108  
31  
P1  
23  
120 Ω  
100 kΩ  
31  
26  
20 kΩ  
MHA109  
32  
AFC  
34  
32  
20 k  
MBE842  
33  
FM-IF12  
0.73  
34  
140  
33  
6 pF  
2.2 kΩ  
MBE843  
17  
1999 Aug 04  
23  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
34  
VSTAB(B)  
1.4  
1.4  
7
1
1 k  
MBE844  
34  
35  
FM-IFO1  
0.69  
34  
35  
560 Ω  
MBE845  
36  
AM-IFI/O2  
1.4  
1.4  
34  
36  
3.6 k  
3.6 kΩ  
MBE846  
17  
37  
FM-IFI1  
0.73  
38  
140 Ω  
37  
6 pF  
1.9 kΩ  
MBE847  
17  
38  
VSTAB(A)  
1.4  
1.4  
7
1
1 kΩ  
MBE848  
38  
1999 Aug 04  
24  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
DC VOLTAGE  
(V)  
PIN  
SYMBOL  
EQUIVALENT CIRCUIT  
AM  
FM  
39  
FM-ON/OFF  
500 Ω  
39  
26  
MBE849  
40  
41  
AM-MIXER  
1.4  
1.4  
1.4  
1.4  
40  
38  
MBE850  
AM-IF1I  
38  
41  
3 kΩ  
7.5 kΩ  
7.5 kΩ  
MBE851  
17  
42  
43  
44  
RFGND2  
n.c.  
0
0
AGC  
0.1  
0.7  
1 k  
1 kΩ  
1 kΩ  
44  
17  
MBE852  
1999 Aug 04  
25  
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V
STAB(A)  
FM front-end  
Mitsumi FE415-G11  
(6)  
K1  
OSC-OUT  
150  
150 Ω  
220 Ω  
IF-OUT  
V
STAB(B)  
V
CC  
(7)  
V
TUNE  
K2  
DATA  
220 kΩ  
(8)  
GND  
AGC  
n.c.  
K3  
BUS-  
WRITE-  
CLOCK  
ENABLE  
100 nF  
470  
pF  
150 kΩ  
10 kΩ  
37  
35  
33  
29  
28  
27  
ANT  
17  
18  
21  
V
CC1  
2.2 µF  
39  
16  
24  
10 kΩ  
68 kΩ  
MO/ST  
V
V
38  
34  
470 nF  
2.2 kΩ  
STAB(A)  
STAB(B)  
V
12  
9
CC1  
7
23  
1
10 Ω  
470 nF  
100 nF  
68 kΩ  
100  
µF  
50 kΩ  
220 nF  
12 nF  
(11)  
TEA5762  
5
100 nF  
14  
15  
AFLO  
AFRO  
120 Ω  
4
100 nF  
12 nF  
(11)  
25  
13  
19  
(10)  
75 kHz  
26  
2
4.7 µF  
GND  
470 nF  
TUNE  
20  
32  
47 kΩ  
(9)  
BB112  
V
22 nF  
STAB(B)  
(1)  
18 pF  
10  
220 nF  
10 nF  
6
40  
41  
36  
10 µF  
44  
31  
30  
8
22  
11  
3
(5)  
L1  
L5  
(2)  
L2  
18 pF  
(3)  
L3  
470 nF  
(4)  
18 pF  
330 pF  
(9)  
MBE816  
L4  
BB112  
470 pF  
V
TUNE  
P1  
P0  
CC2  
V
V
STAB(B)  
47 kΩ  
STAB(A)  
TUNE  
See Table 9 for figure notes.  
Fig.8 Application diagram.  
ahdnbok,uflapegwidt  
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DATA  
V
V
STAB(B)  
50  
330 Ω  
50 Ω  
BUS-  
CLOCK  
WRITE-  
ENABLE  
i4  
(8)  
K2  
V
CC1  
(7)  
10.7 MHz  
100 nF  
K1  
1 nF  
37  
35  
33  
29  
28  
27  
17  
18  
21  
10 kΩ  
2.2 µF  
16  
39  
TUNER  
SWITCH  
FM  
IF1  
FM  
IF2  
FM  
DETECTOR  
PILOT  
DETECTOR  
FM-ON/OFF  
MO/ST  
24  
12  
470 nF  
2.2 kΩ  
19 kHz  
PLL  
38 kHz  
DECODER  
stereo  
V
38  
34  
7
470 nF  
STAB(A)  
V
AM/FM  
INDICATOR  
9
STAB(B)  
68 kΩ  
V
STATUS  
REGISTER  
50 kΩ  
CC1  
SHIFT REGISTER  
STABILIZER  
10 Ω  
23  
1
(11)  
100 nF  
100  
µF  
12 nF  
up  
IN-LOCK  
down DETECTOR  
level  
100 nF  
100 nF  
14  
220 nF  
AFLO  
AFRO  
LAST-STATION  
MEMORY  
5
4
MATRIX  
PRESCALER  
15  
13  
(11)  
stereo mono  
18 kΩ  
12 nF  
10  
pF  
FM  
SEQUENTIAL  
CIRCUIT  
CHARGE  
PUMP  
SDS  
PROGRAMMABLE  
COUNTER  
(6)  
L6  
AM  
TUNE  
MULTIPLEXER  
MUTE  
BB804  
4.7 µF  
S4  
A
hard mute  
AFC  
level  
B
75 kHz  
(9)  
25  
26  
CRYSTAL  
OSCILLATOR  
WINDOW  
DETECTOR  
8.2 kΩ  
DGND  
TEA5762  
470 nF  
19  
20  
32  
V
(1)  
STAB(B)  
L1  
V
AM  
FRONT  
END  
50 Ω  
43 Ω  
i1  
2
AM  
AM  
MIXER  
AM  
IF  
AM  
DETECTOR  
V/I  
(5)  
AGC  
L5  
OSCILLATOR  
CONVERTER  
1 MHz  
680 pF  
6.8 Ω  
6
40 41  
36  
44  
31  
30  
8
22 10  
11  
3
B
(2)  
L2  
S1  
A
10 µF  
S2  
A
18 pF  
B
470 nF 10 nF  
(4)  
L4  
330 pF  
S3  
A
B
18 pF  
L3  
3 kΩ  
220 nF  
(10)  
V
50 Ω  
220 µF  
50 Ω  
i3  
(3)  
BB112  
5 kΩ  
V
i2  
50 Ω  
MPXI  
470 pF  
450 kHz  
V
47 kΩ  
STAB(A)  
V
V
STAB(B) P1 P0  
TUNE  
CC2  
MBE814  
See Table 9 for figure notes.  
TUNE  
ahdnbok,uflapegwidt  
Fig.9 Test circuit.  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
Table 9 Test and application components  
FIGURE NOTE  
DESCRIPTION  
Application diagram; see Fig.8  
1
2
L1 = 250 mH ferroceptor  
L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO  
L3 = 7PA7MCS-11844N, C = 180 pF, Q = 90 TOKO  
L4 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO  
L5 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO  
K1 = SFE10.7MS3 MURATA  
3
4
5
6
7
K2 = SFE10.7MS3 MURATA  
8
K3 = CDA10.7-MG40-A discriminator f = 20 kHz MURATA  
alternatively BB512 (Siemens) or KV1561A TOKO  
standard application: ±30 ppm at Tamb = 25 °C  
short wave application: ±20 ppm at Tamb = 25 °C  
de-emphasis time constant is 50 µs: Cdeem = 12 nF  
de-emphasis time constant is 75 µs: Cdeem = 18 nF  
9
10  
11  
Test circuit; see Fig.9  
1
2
3
4
5
6
7
8
9
K1 = SFE10.7MS3 MURATA  
K2 = CDA10.7-MG40-A discriminator f = 20 kHz MURATA  
L1 = 22281-30091  
L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO  
L3 = 7PA7MCS-11844N, C = 180 pF, Q = 90 TOKO  
L4 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO  
L5 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO  
L6 = S18 301SS-0200  
standard application: ±30 ppm at Tamb = 25 °C  
short wave application: ±20 ppm at Tamb = 25 °C  
alternatively BB512 (Siemens) or KV1561A TOKO  
de-emphasis time constant is 50 µs: Cdeem = 12 nF  
de-emphasis time constant is 75 µs: Cdeem = 18 nF  
10  
11  
1999 Aug 04  
28  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
PACKAGE OUTLINE  
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm  
SOT307-2  
y
X
A
33  
23  
34  
22  
Z
E
e
H
E
E
A
2
A
(A )  
3
A
1
w M  
θ
b
p
L
p
pin 1 index  
L
12  
44  
detail X  
1
11  
w M  
Z
v
M
A
D
b
p
e
D
B
H
v
M
B
D
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
θ
1
2
3
p
E
p
D
E
max.  
10o  
0o  
0.25 1.85  
0.05 1.65  
0.40 0.25 10.1 10.1  
0.20 0.14 9.9 9.9  
12.9 12.9  
12.3 12.3  
0.95  
0.55  
1.2  
0.8  
1.2  
0.8  
mm  
2.10  
0.25  
0.8  
1.3  
0.15 0.15 0.1  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
95-02-04  
97-08-01  
SOT307-2  
1999 Aug 04  
29  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
SOLDERING  
Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by a  
smooth laminar wave.  
Introduction to soldering surface mount packages  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “Data Handbook IC26; Integrated Circuit Packages”  
(document order number 9398 652 90011).  
For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering is not always suitable  
for surface mount ICs, or for printed-circuit boards with  
high population densities. In these situations reflow  
soldering is often used.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
The footprint must incorporate solder thieves at the  
downstream end.  
Reflow soldering  
For packages with leads on four sides, the footprint must  
be placed at a 45° angle to the transport direction of the  
printed-circuit board. The footprint must incorporate  
solder thieves downstream and at the side corners.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Several methods exist for reflowing; for example,  
infrared/convection heating in a conveyor type oven.  
Throughput times (preheating, soldering and cooling) vary  
between 100 and 200 seconds depending on heating  
method.  
Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Typical reflow peak temperatures range from  
215 to 250 °C. The top-surface temperature of the  
packages should preferable be kept below 230 °C.  
Manual soldering  
Wave soldering  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit boards  
with a high component density, as solder bridging and  
non-wetting can present major problems.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
If wave soldering is used the following conditions must be  
observed for optimal results:  
1999 Aug 04  
30  
Philips Semiconductors  
Product specification  
Self Tuned Radio (STR)  
TEA5762  
Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE  
WAVE  
REFLOW(1)  
BGA, SQFP  
not suitable  
suitable  
suitable  
suitable  
suitable  
suitable  
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2)  
PLCC(4), SO, SOJ  
LQFP, QFP, TQFP  
SSOP, TSSOP, VSO  
suitable  
not recommended(4)(5)  
not recommended(6)  
Notes  
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
2. These packages are not suitable for wave soldering as a s  
3. older joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may  
stick to the heatsink (on top version).  
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
5. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;  
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is  
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Aug 04  
31  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,  
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
Pakistan: see Singapore  
Belgium: see The Netherlands  
Brazil: see South America  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 68 9211, Fax. +359 2 68 9102  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Colombia: see South America  
Czech Republic: see Austria  
Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
Tel. +27 11 471 5401, Fax. +27 11 471 5398  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615 800, Fax. +358 9 6158 0920  
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),  
Tel. +39 039 203 6838, Fax +39 039 203 6800  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1999  
SCA67  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
545002/02/pp32  
Date of release: 1999 Aug 04  
Document order number: 9397 750 06057  

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