TEA5762H [NXP]
Self Tuned Radio STR; 自调谐收音机STR型号: | TEA5762H |
厂家: | NXP |
描述: | Self Tuned Radio STR |
文件: | 总32页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA5762
Self Tuned Radio (STR)
Product specification
1999 Aug 04
Supersedes data of 1995 Jun 23
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
FEATURES
• High impedance MOSFET input on AM
• Wide supply voltage range of 2.5 to 12 V
• The tuning system has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio
• Low current consumption 18 mA at AM and FM
(including tuning synthesizer for AM)
• Low noise figure
• The tuning quality is superior and requires no IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances
• Low output distortion
• Due to the new tuning concept, the tuning is
independent of the channel spacing.
• In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible
GENERAL DESCRIPTION
• The local (internal) controller function facilitates reduced
and simplified microcontroller software
The TEA5762 is a 44-pin integrated AM-radio and FM-IF
and demodulator part including a novel tuning concept.
The radio part is based on the TEA5712.
• The high integration level means fewer external
components with regard to the communication between
the radio and the microcontroller and a simple and small
Printed-Circuit Board (PCB)
It is designed for the use with an external FM front-end.
The new tuning concept combines the advantages of hand
tuning with electronic facilities and features. User
‘intelligence’ is incorporated into the tuning algorithm and
an improvement of the analog signal processing is used for
the AFC function.
• The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), which mimics hand tuning and
yields a potentially fast yet reliable tuning operation
• The level of the incoming signal at which the radio must
lock is software programmable
• Two programmable ports
• FM-on/off port to control the external FM front-end
• High selectivity with distributed IF gain
• Soft mute
• Signal dependent stereo-blend
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TEA5762H
QFP44
plastic quad flat package; 44 leads (lead length 1.3 mm);
SOT307-2
body 10 × 10 × 1.75 mm
1999 Aug 04
2
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
QUICK REFERENCE DATA
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
2.5
TYP.
MAX.
UNIT
VCC1
VCC2
Vtune
ICC1
−
12
12
V
supply voltage for tuning
tuning voltage
−
−
V
0.7
12
13
−
−
V
CC2 − 0.75
V
supply current
AM mode
15
16
3.3
2.7
−
18
19
−
mA
mA
mA
mA
µA
FM mode
AM mode
FM mode
IDD
supply current
−
−
ICC2
supply current for tuning in preset
mode (band-end to band-end)
−
800
Tamb
ambient temperature
−15
−
+60
°C
AM performance; note 1
V10
Vi1
AF output voltage
Vi1 = 5 mV
S/N = 26 dB
Vi1 = 1 mV
36
40
−
45
55
0.8
70
70
2.0
mV
µV
%
RF sensitivity input voltage
total harmonic distortion
THD
FM performance; note 2
V10
Vi4
AF output voltage
Vi4 = 5 mV
40
48
20
57
30
mV
IF sensitivity input voltage
V10 = −3 dB; V10 = 0 dB
−
µV
at Vi4 = 10 mV
THD
total harmonic distortion
IF filter
−
0.3
0.8
%
SFE10.7MS3A20K-A
MPX performance; note 3
αcs
channel separation
Vi4 = 30 mV
26
30
−
dB
Notes
1. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 1 MHz; m = 0.3; fmod = 1 kHz; measured in Fig.9 with S1 in position A; S2
in position B; unless otherwise specified.
2. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 10.7 MHz; ∆fm = 22.5 kHz; fm = 1 kHz; measured in Fig.9 with S2 in
position A; S3 in position A; unless otherwise specified.
3. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; fi = 1 kHz; measured in Fig.9 with S2 in
position B; S3 in position B; unless otherwise specified.
1999 Aug 04
3
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FM-IFI2
WRITE-
ENABLE
DATA
BUS-
CLOCK
IFGND FMDEM FSI
FM-IFI1
37
FM-IFO1
35
33
29
28
27
17
18
21
16
PILFIL
MO/ST
39
TUNER
SWITCH
FM
IF1
FM
IF2
FM
DETECTOR
PILOT
DETECTOR
FM-ON/OFF
24
12
19 kHz
PLL
38 kHz
DECODER
stereo
LFI
V
38
34
7
STAB(A)
VCO
V
AM/FM
INDICATOR
STAB(B)
9
STATUS
REGISTER
V
CC1
SHIFT REGISTER
STABILIZER
23
1
V
DDD
RIPPLE
up
IN-LOCK
down DETECTOR
level
14
AFLO
AFRO
LAST-STATION
MEMORY
5
4
MATRIX
COUNTI
PRESCALER
15
13
stereo mono
FM
SEQUENTIAL
CIRCUIT
CHARGE
PUMP
SDS
PROGRAMMABLE
COUNTER
AM
CGND
MULTIPLEXER
MUTE
MUTE
hard mute
AFC
level
25
26
XTAL
CRYSTAL
OSCILLATOR
WINDOW
DETECTOR
TEA5762
19
20
32
DGND
AFC
(n)
AFC
(p)
AFC
AM
FRONT
END
2
V/I
CONVERTER
AM
AM
MIXER
AM
IF
AM
DETECTOR
AGC
AM-RFI
OSCILLATOR
6
40 41
36
44
31
30
8
22 10
42
11
3
MBE815
AMOSC
AM-MIXER
AM-IFI/O2
AGC
P1 P0
TUNE
AFO RFGND MPXI RFGND
V
AM-IFI1
CC2
ahdnbok,uflapegwidt
Fig.1 Block diagram.
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
PINNING
SYMBOL
PIN
DESCRIPTION
RIPPLE
AM-RFI
RFGND
CGND
1
ripple capacitor input
AMRF input
2
3
RF ground and substrate
counter ground
4
COUNTI
AMOSC
VCC1
5
counter input
6
parallel tuned AM-oscillator circuit to ground
supply voltage
7
TUNE
8
tuning output current
VCO
9
voltage controlled oscillator input
AM/FM AF output (output impedance typical 5 kΩ)
stereo decoder input (input impedance typical 150 kΩ)
loop filter input
AFO
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
MPXI
LFI
MUTE
mute input
AFLO
left channel output (output impedance typical 4.3 kΩ)
right channel output (output impedance typical 4.3 kΩ)
pilot detector filter input
AFRO
PILFIL
IFGND
FMDEM
AFC(n)
AFC(p)
FSI
ground of IF, detector and MPX stage
ceramic discriminator input
AFC negative output
AFC positive output
field strength indicator
VCC2
supply voltage for tuning
VDDD
digital supply voltage
MO/ST
XTAL
mono/stereo and tuning indication output
crystal input
DGND
BUS-CLOCK
DATA
digital ground
bus-clock input
bus data input/output
WRITE-ENABLE
P0
bus write-enable input
programmable output port (P0)
programmable output port (P1)
450 kHz LC-input circuit for AM AFC
FMIF input 2 (input impedance typical 330 Ω)
internal stabilized supply voltage (B)
FMIF output 1 (input impedance typical 330 Ω)
input/output to IFT; output: current source
FMIF input 1 (input impedance typical 330 Ω)
internal stabilized supply voltage (A)
FM ON/OFF port
P1
AFC
FM-IFI2
VSTAB(B)
FM-IFO1
AM-IFI/O2
FM-IFI1
VSTAB(A)
FM-ON/OFF
AM-MIXER
open-collector output to IFT
1999 Aug 04
5
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
SYMBOL
PIN
DESCRIPTION
AM-IFI1
RFGND
n.c.
41
42
43
44
IFT or ceramic filter input (input impedance typical 3 kΩ)
FMRF ground
not connected
AGC
AGC capacitor input
RIPPLE
AM-RFI
RFGND
CGND
1
2
3
4
5
6
7
8
9
33 FM-IFI2
32
31
30
AFC
P1
P0
COUNTI
AMOSC
29 WRITE-ENABLE
TEA5762H
28
27
26
DATA
V
BUS-CLOCK
CC1
TUNE
VCO
DGND
25 XTAL
AFO 10
MPXI 11
24 MO/ST
23 V
DDD
MBE820
Fig.2 Pin configuration.
6
1999 Aug 04
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
FUNCTIONAL DESCRIPTION
PRESET OPERATION
The TEA5762 is an integrated radio circuit with
AM-receiver and FM-IF part with demodulator and stereo
decoder. The circuit includes digital tuning and control
functions.
In preset mode, the microcontroller has to load information
such as frequency band, frequency and mono/stereo. This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:
The radio
1. The information is loaded into a shift register, a
last-station memory and the counter.
The AM circuit incorporates a double balanced mixer, a
one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.
2. The Automatic Frequency Control (AFC) is switched
off.
3. The counter starts counting the VCO frequency and
the tuning voltage is varied until the desired frequency
roughly equals the real frequency.
The AM input is designed to be connected to the top of a
tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the AM
front-end.
4. The AFC is then switched on and the counter is
switched off.
The first AM selectivity can be an IF-Tank (IFT) as well as
an IFT combined with a ceramic filter; the second one is an
IFT.
5. The real frequency is more precisely tuned to the
desired frequency.
For FM operation an external FM front-end is necessary.
This is switched on and off by the FM-ON/OFF signal
which is generated in the bus system.
After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).
The AFC circuit in the TEA5762 provides a tuning voltage
to drive the VCO of the external FM front-end.
The frequency of the external VCO is counted in the Self
Tuned Radio (STR) tuning system.
The FM-IF circuit is designed for distributed IF ceramic
filters. The FM quadratic detector uses a ceramic
resonator.
In the FM mode the tuning voltage controls the VCO of the
external FM front-end and the frequency of the VCO is
counted in the TEA5762.
The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.
In the event of fading or pulling the in-lock signal becomes
logic 0 and the synthesizer will be switched-on again and
the algorithm will be repeated.
Tuning
SEARCH OPERATION
The tuning-concept of Self Tuned Radio (STR) is based on
FUZZY LOGIC: it mimics hand tuning (hand tuning is a
combination of coarse and fine tuning to the qualitatively
best frequency position). As a consequence the tuning
system is very fast.
During a search operation, the only action the
microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
the found station will be counted by the counter and written
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller. The
microcontroller decides whether the frequency is within the
desired frequency band. If so, this frequency can be stored
under a preset and if not, a new search action should be
started.
The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.
The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:
• Preset operation
• Search operation.
1999 Aug 04
7
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:
These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.
• Store the current frequency in the memory
• Issue the search command
Table 2 Bus-clock functions
• Wait for data valid and read the new frequency
BUS-CLOCK
MO/ST (PIN 24)
RESULT
stereo
• If the new frequency is the same as the stored
frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.
LOW
LOW
HIGH
HIGH
LOW
HIGH
LOW
HIGH
mono
tuned
Description of the bus
not tuned
The TEA5762 radio has a bus which consists of three
wires, as shown in Table 1.
The TEA5762 has a 25-bit shift register; see Table 3 for an
explanation of the shift register bits.
Table 1 Bus signals
If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.
SIGNAL
DESCRIPTION
PIN
BUS-CLOCK
DATA
software driven clock input
data input/output
27
28
29
The bus protocol is depicted in Figs 3 and 4.
WRITE-ENABLE write/read-input
Table 3 Explanation of the shift register bits
LOGIC
STATE
BIT
DESCRIPTION
RESULT
S.24 (MSB)
search start/end
0
1
0
1
0
1
after a search when a station is found or after a preset
during the search action
D.23
M.22
search up/down
mono/stereo
indicates if the radio has to search down
indicates if the radio has to search up
stereo is allowed
mono is required (radio switched to forced mono)
selects FM/MW/LW/SW band
B0.21
B1.20
P0.19
band
band
port
see Table 4
see Table 4
note 1
selects FM/MW/LW/SW band
user programmable bits which e.g. can be used as band
switch driver
P1.18
S0.17
S1.16
port
note 1
user programmable bits which e.g. can be used as band
switch driver
search-level of station
search-level of station
see Table 5
see Table 5
determines the locking field strength during an
automatic search, automatic store or manual search
determines the locking field strength during an
automatic search, automatic store or manual search
15
dummy
−
−
buffer
F.14 to F.0 (LSB)
frequency
determine the tuning frequency of the radio; see Table 6
for the bit values
1999 Aug 04
8
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
Note
Table 6 Values for bits 14 to 0
1. The output pins 30 and 31 can drive currents up to
5 mA; bits 19 (P0) and 18 (P1) control the output
voltage of the control pins P0 (pin 30) and P1 (pin 31):
FM
VALUE(1)
(kHz)
AM
VALUE(2)
(kHz)
BIT
BIT VALUE
a) Bit 19 (P0) LOW sets P0 (pin 30) to LOW.
b) Bit 19 (P0) HIGH sets P0 (pin 30) to HIGH.
c) Bit 18 (P1) LOW sets P1 (pin 31) to LOW.
d) Bit 18 (P1) HIGH sets P1 (pin 31) to HIGH.
14
13
12
11
10
9
214
213
212
211
210
29
28
27
26
25
−
102400
51200
25600
12800
6400
3200
1600
800
16384
8192
4096
2048
1024
512
256
128
64
Table 4 Truth table for bits 21 and 20
B0
0
B1
0
BAND SELECT
8
FM(1)
MW
LW
7
0
1
6
1
0
5
400
32
1
1
SW
4
24
200
16
3
23
22
21
100
8
Note
2
50
4
1. When FM is selected, the control output FM-ON/OFF
is set LOW to switch on the external FM front-end.
1
25
2
0
20
12.5
1
Table 5 Truth table for bits 16 and 17
Notes
SIGNAL RECEPTION(1)
1. FM value of the affected oscillators:
FM VALUE = FMRF + FMIF.
S1
S0
FM IF INPUT
AM RF INPUT
(µV)
(µV)
2. AM value of the affected oscillators:
AM VALUE = AMRF + AMIF.
0
0
1
1
0
1
0
1
>50
>100
>300
>1500
>28
>40
>63
>1000
Note
1. The given values for signal reception are
corresponding to a −3 dB point of 20 µV for FM.
1999 Aug 04
9
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
READING DATA
WRITING DATA
While WRITE-ENABLE is LOW data can be read by the
microcontroller. At a rising edge of the BUS-CLOCK, data
is shifted out of the register. This data is available from the
point where the BUS-CLOCK is HIGH until the next rising
edge of the BUS-CLOCK occurs (see Fig.3).
While WRITE-ENABLE is HIGH the microcontroller can
transmit data to the TEA5762 (hard mute is active). At a
rising edge of the BUS-CLOCK, the register shifts and
accepts one bit into LSB. At clock LOW the microcontroller
writes data (see Fig.4).
To read the entire shift register 24 clock pulses are
necessary.
To write the entire shift register 25 clock pulses are
necessary.
WRITE-ENABLE
data read
BUS-CLOCK
DATA
data available
MBE817
data available after search ready
MSB is LOW
data shift
Fig.3 Read data.
WRITE-ENABLE
BUS-CLOCK
DATA
MBE818
data shift
data change
Fig.4 Write data.
10
1999 Aug 04
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
BUS TIMING
WRITE-ENABLE
V
IH
BUS-CLOCK
V
IL
t
t
HIGH LOW
DATA
MBE819
t
da
Fig.5 Bus timing.
Table 7 Digital inputs
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Digital inputs
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
1.4
−
V
V
−
0.6
Timing
fclk
clock input
−
300
−
kHz
µs
tHIGH
tLOW
tda
clock HIGH time
clock LOW time
1.67
1.67
−
−
µs
shift register available after ‘search ready’
14
µs
1999 Aug 04
11
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC1
Ptot
Tstg
Tamb
Tj
supply voltage
0
13.2
250
V
total power dissipation
Tamb = 70 °C
−
mW
°C
°C
°C
V
storage temperature
−65
−15
−15
−
+150
+60
operating ambient temperature
operating junction temperature
electrostatic handling for all pins
+150
±200
Ves
note 1
Note
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
65
K/W
1999 Aug 04
12
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
CHARACTERISTICS
VCC1 = 3 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
VCC1
PARAMETER
supply voltage
CONDITIONS
MIN.
2.5
TYP.
MAX.
UNIT
−
−
−
−
−
12
12
12
V
VCC2
VDDD
Vtune
ICC2
supply voltage for tuning
supply voltage for digital part
tuning voltage
−
V
V
2.5
0.7
−
V
CC2 − 0.75 V
supply current for tuning in preset
mode (band-end to band-end)
800
µA
fBUS-CLOCK(max) maximum BUS-CLOCK frequency
ICC1 current consumption during acquisition AM mode
−
−
300
18
18.5
−
kHz
mA
mA
mA
mA
mA
mA
mA
mA
s
12
12.5
−
15
of VCC1
FM mode
15.5
4.8
5.5
15
IDD
current consumption during acquisition AM mode
of IDD
FM mode
−
−
ICC1
current consumption after acquisition
of VCC1
AM mode
FM mode
AM mode
FM mode
12
13
−
18
19
−
16
IDD
current consumption after acquisition
of IDD
3.2
2.7
−
−
−
tsearch
tacq
synthesizer auto-search time for empty FM mode
band
−
10
synthesizer preset acquisition time
between two band limits
FM
−
100
100
200
500(1)
−
−
ms
MW
−
−
ms
LW
−
−
ms
SW
−
−
ms
fband
frequency band range of the
synthesizer
AM mode
0.144
30
MHz
∆fFM
AFC inaccuracy of FM
with Mitsumi
front-end
−
−
1
kHz
∆fAM
AFC inaccuracy of AM
−
−
100
Hz
IP0/P1(sink)
sink current of software programmable VCC1 = 5 V
output P0/P1
4
6
−
mA
IP0/P1(source)
source current of software
programmable output P0/P1
VCC1 = 5 V
5
9
−
mA
Note
1. Depending on band.
1999 Aug 04
13
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
AM CHARACTERISTICS
Input frequency = 1 MHz; m = 0.3; fmod = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL
V10
PARAMETER
AF output voltage
CONDITIONS
Vi1 = 5 mV
MIN.
36
TYP.
45
MAX.
70
UNIT
mV
Vi1
Vil
RF sensitivity
S/N = 26 dB
40
55
70
µV
large signal voltage handling
capacity
m = 0.8; THD ≤ 8%
150
300
−
mV
PSRR
power supply ripple rejection
V10
∆V7 = 100 mV (RMS);
100 Hz; V7 = 3.0 V
−
−47
−
dB
----------
∆V7
Ii
input current (pin 2)
V44 = 0.2 V
V44 = 0.2 V
V44 = 0.2 V
−
0
−
µA
pF
dB
dB
dB
%
Ci
Gc
input capacitance (pin 2)
front-end conversion gain
−
−
4
5
10
−14
50
0.8
56
14
0
V44 = 0.9 V
−26
−
S/N
signal-to-noise ratio
total harmonic distortion
IF suppression
−
THD
α450
Vi1 = 1 mV
−
2.0
−
V10 = 30 mV
−
dB
FM-IF CHARACTERISTICS
Input frequency = 10.7 MHz; ∆f = 22.5 kHz; fmod = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL
V10
PARAMETER
AF output voltage
CONDITIONS
Vi4 = 10 mV
MIN.
40
TYP.
48
MAX.
57
UNIT
mV
Vi4
IF limiting sensitivity
V10 = −3 dB; V10 = 0 dB at
−
50
80
µV
Vi4 = 10 mV
PSRR
power supply ripple rejection
V10
∆V7 = 100 mV (RMS);
100 Hz; V7 = 3.0 V
−44
−
−
dB
----------
∆V7
S/N
signal-to-noise ratio
Vi4 = 10 mV
62
−
−
dB
%
THD
total harmonic distortion
IF filter SFE10.7MS3A20K-A −
0.3
0.8
1999 Aug 04
14
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
STEREO DECODER CHARACTERISTICS
Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF-signal of 100 mV to front-end to set radio to
maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.
SYMBOL
PARAMETER
AF output voltage
CONDITIONS
MIN.
TYP.
160
MAX. UNIT
V14/15
−
−
mV
mV
mV
dB
dB
%
Vpilot(s)
Vpilot(m)
switch to stereo
switch to mono
−
8
12
−
2
5
VAF-L/Vi3 MPX voltage gain
−1.5
−
−
+1.5
−
S/N
THD
αcs
α19
α38
α
signal-to-noise ratio
V
pilot = 15.5 mV (stereo)
74
0.5
30
32
21
30
1
total harmonic distortion
channel separation
−
1.0
−
26
27
16
22
−
dB
dB
dB
dB
dB
dB
dB
carrier and harmonic suppression
19 kHz (200 mV) = 0 dB
38 kHz
−
−
stereo-blend
Vi4 = 5 mV
−
Vi4 = 200 µV
2
mute(s)
soft mute depth
Vi4 = 30 µV; V14 = V15
Vi4 = 10 µV; V14 = V15
−1
−
0
−
−6
−10
TUNING CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VFM
FM voltage levels
α
α
α
−3 dB-point at Vi4 = 20 µV
S0 = 1; S1 = 1
high (auto-store/search)
medium (auto-store/search)
low (auto-store/search)
600
100
40
1500
300
100
50
5000
550
200
90
µV
µV
µV
µV
S0 = 0; S1 = 1
S0 = 1; S1 = 0
nominal (preset mode/tuning indication)
AM voltage levels
S0 = 0; S1 = 0
30
VAM
−3 dB-point at Vi4 = 20 µV
S0 = 1; S1 = 1
high (auto-store/search)
medium (auto-store/search)
low (auto-store/search)
400
50
1000
63
2500
80
µV
µV
µV
µV
S0 = 0; S1 = 1
S0 = 1; S1 = 0
32
40
50
nominal (preset mode/tuning indication)
AFC voltage off mode
S0 = 0; S1 = 0
25
28
40
VAFC(off)
mute(h)
−3 dB-point at Vi4 = 20 µV
FM mode
−
−
−
3
−
−
−
µV
µV
dB
AM mode
25
60
hard mute
WRITE-ENABLE = HIGH
1999 Aug 04
15
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(dBµV)
−20
0
20
40
60
80
100
120
10
9
THD
(dB)
0
(%)
8
7
6
5
4
3
2
1
0
(1)
−10
−20
−30
−40
−50
−60
−70
−80
(2)
(3)
−7
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
10
1
V
(V)
i1
MBE853
(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.
Fig.6 AM mode.
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0
(dBµV)
20
40
60
80
100
120
10
(dB)
0
9
THD
(1)
(%)
8
7
6
5
4
3
2
1
0
(3)
(4)
−10
−20
−30
−40
−50
−60
−70
−80
(2)
(5)
(6)
(7)
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
V
(V)
i1
MBE854
(1) Mono signal.
(2) Noise in mono mode.
(3) Left channel with modulation left.
(4) Right channel with modulation left.
(5) Noise in stereo mode.
(6) Harmonic distortion ∆f = 75 kHz.
(7) Total harmonic distortion ∆f = 22.5 kHz.
Fig.7 FM mode.
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
INTERNAL CIRCUITRY
Table 8 Equivalent pin circuits and pin voltages
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
1
RIPPLE
2.1
2.1
7
1
1 kΩ
3 kΩ
70 pF
MBE821
17
2
AM-RFI
0
0
4
2
MBE822
3
4
5
RFGND
CGND
−
0
0
−
0
0
COUNTI
5
4
MBE823
6
AMOSC
0
0
6
4
MBE824
7
VCC1
3.0
3.0
1999 Aug 04
18
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
8
TUNE
−
−
22
8
MBE825
26
9
VCO
1.3
0.95
1 kΩ
9
10 kΩ
MBE826
17
10
AFO
0.6
0.7
10
5 kΩ
MBE827
17
11
MPXI
1.23
1.23
150 kΩ
150 kΩ
11
17
9.5 kΩ
MBE828
1999 Aug 04
19
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
12
LFI
0.1
0.8
4 kΩ
13 kΩ
12
17
MBE829
13
14
15
MUTE
AFLO
AFRO
0.7
0.7
7 kΩ 50 kΩ
13
17
MBE830
0.65
0.65
14
5 kΩ
MBE831
17
0.65
0.65
15
17
5 kΩ
MBE832
1999 Aug 04
20
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
16
PILFIL
0.95
0.95
16
17
10 kΩ
10 kΩ
MBE833
17
18
IFGND
0
0
FMDEM
−
1.0
180 Ω
18
17
910 Ω
MBE834
19
20
AFC(n)
AFC(p)
−
−
−
−
10 kΩ
10 kΩ
19/20
MBE835
21
FSI
−
−
1.4 V
40 kΩ
21
26
12 to 34 kΩ
(dependent on
bits 16 and 17)
MBE836
22
23
VCC2
VDDD
−
−
3.0
3.0
1999 Aug 04
21
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
24
MO/ST
−
−
100 Ω
24
MBE837
26
25
XTAL
−
−
50 kΩ
50 kΩ
50 kΩ
25
26
MBE838
26
27
DGND
0
0
BUS-CLOCK
−
−
27
26
MBE839
28
29
DATA
−
−
−
−
100 Ω
28
WRITE-
ENABLE
100 kΩ
50 kΩ
29
26
MBE840
1999 Aug 04
22
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
30
P0
−
−
23
120 Ω
100 kΩ
30
26
20 kΩ
MHA108
31
P1
−
−
23
120 Ω
100 kΩ
31
26
20 kΩ
MHA109
32
AFC
−
−
34
32
20 kΩ
MBE842
33
FM-IF12
−
0.73
34
140 Ω
33
6 pF
2.2 kΩ
MBE843
17
1999 Aug 04
23
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
34
VSTAB(B)
1.4
1.4
7
1
1 kΩ
MBE844
34
35
FM-IFO1
−
0.69
34
35
560 Ω
MBE845
36
AM-IFI/O2
1.4
1.4
34
36
3.6 kΩ
3.6 kΩ
MBE846
17
37
FM-IFI1
−
0.73
38
140 Ω
37
6 pF
1.9 kΩ
MBE847
17
38
VSTAB(A)
1.4
1.4
7
1
1 kΩ
MBE848
38
1999 Aug 04
24
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
DC VOLTAGE
(V)
PIN
SYMBOL
EQUIVALENT CIRCUIT
AM
FM
39
FM-ON/OFF
−
−
500 Ω
39
26
MBE849
40
41
AM-MIXER
1.4
1.4
1.4
1.4
40
38
MBE850
AM-IF1I
38
41
3 kΩ
7.5 kΩ
7.5 kΩ
MBE851
17
42
43
44
RFGND2
n.c.
0
−
0
−
AGC
0.1
0.7
1 kΩ
1 kΩ
1 kΩ
44
17
MBE852
1999 Aug 04
25
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V
STAB(A)
FM front-end
Mitsumi FE415-G11
(6)
K1
OSC-OUT
150 Ω
150 Ω
220 Ω
IF-OUT
V
STAB(B)
V
CC
(7)
V
TUNE
K2
DATA
220 kΩ
(8)
GND
AGC
n.c.
K3
BUS-
WRITE-
CLOCK
ENABLE
100 nF
470
pF
150 kΩ
10 kΩ
37
35
33
29
28
27
ANT
17
18
21
V
CC1
2.2 µF
39
16
24
10 kΩ
68 kΩ
MO/ST
V
V
38
34
470 nF
2.2 kΩ
STAB(A)
STAB(B)
V
12
9
CC1
7
23
1
10 Ω
470 nF
100 nF
68 kΩ
100
µF
50 kΩ
220 nF
12 nF
(11)
TEA5762
5
100 nF
14
15
AFLO
AFRO
120 Ω
4
100 nF
12 nF
(11)
25
13
19
(10)
75 kHz
26
2
4.7 µF
GND
470 nF
TUNE
20
32
47 kΩ
(9)
BB112
V
22 nF
STAB(B)
(1)
18 pF
10
220 nF
10 nF
6
40
41
36
10 µF
44
31
30
8
22
11
3
(5)
L1
L5
(2)
L2
18 pF
(3)
L3
470 nF
(4)
18 pF
330 pF
(9)
MBE816
L4
BB112
470 pF
V
TUNE
P1
P0
CC2
V
V
STAB(B)
47 kΩ
STAB(A)
TUNE
See Table 9 for figure notes.
Fig.8 Application diagram.
ahdnbok,uflapegwidt
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DATA
V
V
STAB(B)
50 Ω
330 Ω
50 Ω
BUS-
CLOCK
WRITE-
ENABLE
i4
(8)
K2
V
CC1
(7)
10.7 MHz
100 nF
K1
1 nF
37
35
33
29
28
27
17
18
21
10 kΩ
2.2 µF
16
39
TUNER
SWITCH
FM
IF1
FM
IF2
FM
DETECTOR
PILOT
DETECTOR
FM-ON/OFF
MO/ST
24
12
470 nF
2.2 kΩ
19 kHz
PLL
38 kHz
DECODER
stereo
V
38
34
7
470 nF
STAB(A)
V
AM/FM
INDICATOR
9
STAB(B)
68 kΩ
V
STATUS
REGISTER
50 kΩ
CC1
SHIFT REGISTER
STABILIZER
10 Ω
23
1
(11)
100 nF
100
µF
12 nF
up
IN-LOCK
down DETECTOR
level
100 nF
100 nF
14
220 nF
AFLO
AFRO
LAST-STATION
MEMORY
5
4
MATRIX
PRESCALER
15
13
(11)
stereo mono
18 kΩ
12 nF
10
pF
FM
SEQUENTIAL
CIRCUIT
CHARGE
PUMP
SDS
PROGRAMMABLE
COUNTER
(6)
L6
AM
TUNE
MULTIPLEXER
MUTE
BB804
4.7 µF
S4
A
hard mute
AFC
level
B
75 kHz
(9)
25
26
CRYSTAL
OSCILLATOR
WINDOW
DETECTOR
8.2 kΩ
DGND
TEA5762
470 nF
19
20
32
V
(1)
STAB(B)
L1
V
AM
FRONT
END
50 Ω
43 Ω
i1
2
AM
AM
MIXER
AM
IF
AM
DETECTOR
V/I
(5)
AGC
L5
OSCILLATOR
CONVERTER
1 MHz
680 pF
6.8 Ω
6
40 41
36
44
31
30
8
22 10
11
3
B
(2)
L2
S1
A
10 µF
S2
A
18 pF
B
470 nF 10 nF
(4)
L4
330 pF
S3
A
B
18 pF
L3
3 kΩ
220 nF
(10)
V
50 Ω
220 µF
50 Ω
i3
(3)
BB112
5 kΩ
V
i2
50 Ω
MPXI
470 pF
450 kHz
V
47 kΩ
STAB(A)
V
V
STAB(B) P1 P0
TUNE
CC2
MBE814
See Table 9 for figure notes.
TUNE
ahdnbok,uflapegwidt
Fig.9 Test circuit.
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
Table 9 Test and application components
FIGURE NOTE
DESCRIPTION
Application diagram; see Fig.8
1
2
L1 = 250 mH ferroceptor
L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
L3 = 7PA7MCS-11844N, C = 180 pF, Q = 90 TOKO
L4 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
L5 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
K1 = SFE10.7MS3 MURATA
3
4
5
6
7
K2 = SFE10.7MS3 MURATA
8
K3 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
alternatively BB512 (Siemens) or KV1561A TOKO
standard application: ±30 ppm at Tamb = 25 °C
short wave application: ±20 ppm at Tamb = 25 °C
de-emphasis time constant is 50 µs: Cdeem = 12 nF
de-emphasis time constant is 75 µs: Cdeem = 18 nF
9
10
11
Test circuit; see Fig.9
1
2
3
4
5
6
7
8
9
K1 = SFE10.7MS3 MURATA
K2 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
L1 = 22281-30091
L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
L3 = 7PA7MCS-11844N, C = 180 pF, Q = 90 TOKO
L4 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
L5 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
L6 = S18 301SS-0200
standard application: ±30 ppm at Tamb = 25 °C
short wave application: ±20 ppm at Tamb = 25 °C
alternatively BB512 (Siemens) or KV1561A TOKO
de-emphasis time constant is 50 µs: Cdeem = 12 nF
de-emphasis time constant is 75 µs: Cdeem = 18 nF
10
11
1999 Aug 04
28
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
PACKAGE OUTLINE
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
y
X
A
33
23
34
22
Z
E
e
H
E
E
A
2
A
(A )
3
A
1
w M
θ
b
p
L
p
pin 1 index
L
12
44
detail X
1
11
w M
Z
v
M
A
D
b
p
e
D
B
H
v
M
B
D
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
θ
1
2
3
p
E
p
D
E
max.
10o
0o
0.25 1.85
0.05 1.65
0.40 0.25 10.1 10.1
0.20 0.14 9.9 9.9
12.9 12.9
12.3 12.3
0.95
0.55
1.2
0.8
1.2
0.8
mm
2.10
0.25
0.8
1.3
0.15 0.15 0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-08-01
SOT307-2
1999 Aug 04
29
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
SOLDERING
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
1999 Aug 04
30
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
REFLOW(1)
BGA, SQFP
not suitable
suitable
suitable
suitable
suitable
suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2)
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
not recommended(4)(5)
not recommended(6)
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a s
3. older joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may
stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 04
31
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/02/pp32
Date of release: 1999 Aug 04
Document order number: 9397 750 06057
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