TZA1045TM [NXP]
IC SPECIALTY CONSUMER CIRCUIT, PDSO16, 6.60 X 5.20 MM, 1.10 MM HEIGHT, PLASTIC, SOT-814-1, HTSSON-16, Consumer IC:Other;
| 型号： | TZA1045TM |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY CONSUMER CIRCUIT, PDSO16, 6.60 X 5.20 MM, 1.10 MM HEIGHT, PLASTIC, SOT-814-1, HTSSON-16, Consumer IC:Other 光电二极管 商用集成电路 |
| 文件： | 总21页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA1045
Photodiode and amplifier IC for
CD and DVD applications
Preliminary specification
2003 Dec 01
Supersedes data of 2003 Jun 26
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
FEATURES
The device contains eight RF amplifiers for the central and
satellite diodes and one differential RF amplifier (RFP
and RFN) which handles the sum of the four A, B, C, and D
central diode signals.
• High frequency RF amplifiers
(typical bandwidth = 240 MHz)
• Suitable for all CD (785 nm) and DVD (655 nm)
Programming the gain is a very versatile way to optimize
interfacing between the TZA1045 and the pre-amplifier.
The gain can be programmed for CD or DVD media with
the gain switch CD/DVD.
read/write applications
• Four high bandwidth central outputs (A, B, C and D),
four satellite outputs (E, F, G, and H) and one high
bandwidth differential output (RFP, RFN)
The H/L switch can be used for CD-R or CD-RW discs.
• Internal current clamp and current fold back (power
reduction)
Gain switch R/W is used to reduce the gain during writing.
During writing, the high peak signals for the central and
satellite segments are clamped internally and the output
currents of the A, B, C, D, E, F, G and H segments are
reduced to almost zero (fold back) to minimize the power
consumption.
• Versatile programmable gain switches (CD/DVD, H/L
and R/W)
• Single 5 V supply
• Current outputs for optimum signal transport over flex
cable
All outputs are current outputs that can supply a maximum
of 8 mA. In CD-R writing mode, the clipping level of the
output currents is between 5 and 8 mA.
• Small outline packages, SSOP16T and HTSSON16T,
with good positional tolerance.
The SSOP16T package has a low spread on the
z tolerance. The z tolerance is measured between the
diodes (chip surface) and the bottom of the leads. The
diodes have an offset of 54 µm in the ‘y’ direction with
respect to the leadframe centre and a tolerance of ±50 µm
in both ‘x’ and ‘y’ directions.
APPLICATIONS
• CD and DVD read/write applications.
GENERAL DESCRIPTION
The TZA1045 is a single optical pick-up IC for read/write
systems and is suitable for CD and DVD applications.
The diodes are placed under an angle of 45° ±1° with
respect to the leadframe of the module.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TZA1045TS
TZA1045TM
SSOP16T
plastic shrink small outline package/transparent;
16 leads (straight); body width 4.4 mm
SOT734-1
HTSSON16T plastic thermal enhanced thin shrink small outline
package/transparent; no leads; 16 terminals;
body 6.6 × 5.2 × 1.1 mm
SOT814-1
2003 Dec 01
2
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
QUICK REFERENCE DATA
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VDD1
VDD2
IDD1
supply voltage front-end
supply voltage back-end
supply current front-end
4.5
5.0
5.0
5.5
5.5
V
V
4.5
dark conditions
writing DVD+R
writing CD-R
12.8
30.9
12.9
11.4
31.9
31.3
31.7
30.9
−
17.4
41.2
17.2
15.2
42.5
41.8
42.2
41.2
6.0
21.3
51.5
21.5
19.0
53.1
52.2
52.8
51.5
−
mA
mA
mA
mA
mA
mA
mA
mA
mA
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
dark conditions
IDD2
supply current back-end
Temperature range
Tamb
ambient temperature
0
−
70
°C
RF bandwidth
B−3dB(cen) RF bandwidth central channels Io = 1 mA
A, B, C and D
writing DVD+R
135
225
240
115
135
100
135
80
170
280
300
145
170
125
170
105
205
340
360
175
205
155
205
130
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
writing CD-R
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
Io = 1 mA
B−3dB(dif)
RF bandwidth differential
channels RFP and RFN
writing DVD+R
writing CD-R
135
235
290
120
135
95
170
290
360
150
170
120
175
105
205
350
435
180
210
145
210
130
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
140
80
2003 Dec 01
3
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
B−3dB(sat)
RF bandwidth satellite channels Io = 1 mA
E, F, G and H
writing DVD+R
65
85
105
110
140
90
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
writing CD-R
70
90
60
85
60
80
40
90
writing DVD+RW
writing CD-RW
115
75
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
110
75
135
90
100
50
120
60
Settling time; note 1
tst(max)
settling time
CD-R write mode (central and
satellite channels); Iset > 300 µA;
accuracy set level within ±5%; ratio
write to read peak level factor <50
−
−
< 22
< 22
−
−
ns
ns
CD-R write mode (differential
channels RFP and RFN);
I
set > 70 µA; accuracy set level within
±5%; ratio write to read peak level
factor <50
CD-RW and DVD+RW write modes
(all channels); no clip; Iset > 70 µA;
accuracy set level within ±5%; ratio
write to read peak level factor 2;
Io < Io(max)
−
−
< 10
< 15
−
−
ns
ns
DVD+R write mode (all channels);
no clip; Iset > 100 µA; accuracy set
level within ±5%; ratio write to read
peak level factor 20; Io < Io(max)
Phase and group delay variation
∆td(p)(dif)
phase delay variation differential Io = 1 mA; fi = 13 to 130 MHz
channels RFP and RFN
reading DVD-ROM
−
−
−
−
0.15
1
−
−
−
−
ns
ns
ns
ns
reading CD-ROM
reading DVD+RW
0.25
1.3
reading CD-RW
∆td(g)(dif)
group delay variation differential Io = 1.5 mA; fi = 2.6 to 130 MHz
channels RFP and RFN
reading DVD-ROM
−
−
−
−
0.4
0.8
0.6
1.2
−
−
−
−
ns
ns
ns
ns
reading CD-ROM
reading DVD+RW
reading CD-RW
2003 Dec 01
4
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Sensitivity
sDVD+R
output current sensitivity for
DVD+R
writing; λ = 655 nm
Io(cen)
−
1.44
4.76
0.54
−
−
−
A/W
A/W
A/W
Io(sat)
−
−
Io(RFP), Io(RFN)
writing; λ = 785 nm
Io(cen)
sCD-R
output current sensitivity for
CD-R
−
−
−
43.2
173
−
−
−
A/W
A/W
A/W
Io(sat)
Io(RFP), Io(RFN)
1.08
sDVD+RW
output current sensitivity for
DVD+RW
writing; λ = 655 nm
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
2.88
11.5
1.08
−
−
−
A/W
A/W
A/W
I
reading; λ = 655 nm
Io(cen)
−
−
−
43.2
173
−
−
−
A/W
A/W
A/W
Io(sat)
Io(RFP), Io(RFN)
writing; λ = 785 nm
Io(cen)
16.2
sCD-RW
output current sensitivity for
CD-RW
−
−
−
5.67
23.0
2.16
−
−
−
A/W
A/W
A/W
Io(sat)
Io(RFP), Io(RFN)
reading; λ = 785 nm
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
173
691
64.8
−
−
−
A/W
A/W
A/W
I
sDVD-ROM output current sensitivity for
DVD-ROM
reading; λ = 655 nm
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
21.6
86.4
8.1
−
−
−
A/W
A/W
A/W
I
sCD-ROM
output current sensitivity for
CD-ROM
reading; λ = 785 nm
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
86.4
346
−
−
−
A/W
A/W
A/W
I
32.4
Note
1. The settling time includes the recovery time.
2003 Dec 01
5
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
BLOCK DIAGRAM
V
V
V
V
V
V
V
V
6
DD2
DD2
DD2
DD2
DD2
DD2
DD2
DD2
GND
V
DD1
3
1
7
V
DD2
A
A
B
C
D
E
F
14
V
DD1
V
DD1
B
C
D
E
V
DD1
8
V
DD1
2
V
DD1
16
10
15
9
V
V
V
DD1
DD1
F
G
H
DD1
G
H
V
DD1
V
DD2
4
5
RFP
12
H/L
13
11
(1)
CODER
CD/DVD
R/W
RFN
TZA1045
V
DD2
MGU615
(1) The coder translates the three digital inputs into the appropriate gain level of each amplifier.
The limiter is switched on only for CD-R writing for the segment outputs.
Fig.1 Block diagram.
2003 Dec 01
6
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
PINNING
SYMBOL
PIN
DESCRIPTION
A
1
2
central segment output A
central segment output D
supply voltage back-end
positive RF output
D
handbook, halfpage
VDD2
RFP
RFN
GND
B
3
A
D
1
2
3
4
5
6
7
8
16
15
14
E
G
V
4
5
negative RF output
V
DD2
RFP
DD1
6
ground
13 CD/DVD
12 H/L
7
central segment output B
central segment output C
satellite segment output H
satellite segment output F
TZA1045TS
RFN
GND
B
C
8
H
9
11 R/W
F
10
11
10
9
F
R/W
gain select switch for reading or
writing
C
H
MGU614
H/L
12
gain select switch for high or low
reflective media
CD/DVD
13
14
15
16
gain select switch for CD or DVD
supply voltage front-end
VDD1
G
satellite segment output G
satellite segment output E
Fig.2 Pin configuration SSOP16T.
E
MODE SELECTION
Table 1 Coder switching
PIN LEVEL
MODE
R/W
H/L
CD/DVD
handbook, halfpage
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
HIGH
LOW
LOW
HIGH
HIGH
LOW
LOW
HIGH
HIGH
LOW
writing DVD+R
C
8
9
H
F
HIGH writing CD-R
LOW writing DVD+RW
HIGH writing CD-RW
LOW reading DVD-ROM
HIGH reading CD-ROM
LOW reading DVD+RW
HIGH reading CD-RW
B
7
6
5
4
3
2
1
10
GND
RFN
RFP
11 R/W
12 H/L
TZA1045TM
13 CD/DVD
V
14
15
V
DD1
DD2
D
G
E
A
16
MGX469
terminal 1
index area
Bottom view.
Fig.3 Pin configuration HTSSON16T.
2003 Dec 01
7
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
MECHANICAL DATA
115
50
50
115
E
F
A
D
B
C
G
H
145
100
MGU616
150
150
Dimensions in µm.
Space between central segments: <1 µm.
Space between satellite segments: <1 µm.
Fig.4 Photodiode configuration.
16
15
14
E
13
12
11
10
9
y
+
54 µm offset
x
45° ± 1°
package
centre
see detail X
1
2
3
4
5
6
7
8
DETAIL X
MGU617
45° angle is with respect to the leadframe.
Drawing is not to scale.
Package window is not shown.
Fig.5 Diagram showing position of the photodiode array with respect to the SSOP16T package (top view).
2003 Dec 01
8
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
4.55
0.1 C
C
1.50 min
0.3
1.00
min
°
0
°
± 1
rotation
tolerance
F
3.0 ± 0.12
pin 1
mark
0.33
0.23
(16×)
2.275 ± 0.12
0.30 ± 0.025
0.1
001aaa035
Fig.6 Diagram showing position of the photodiode array with respect to the HTSSON16T package (top view).
2003 Dec 01
9
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
−0.3
−0.3
MAX.
+5.5
+5.5
UNIT
VDD1
VDD2
∆VDD1
∆VDD2
Vn
supply voltage front-end
supply voltage back-end
V
V
supply voltage difference with respect to VDD2
supply voltage difference with respect to VDD1
voltage at pins
V
V
DD2 − 0.3 VDD2 + 0.3 V
DD1 − 0.3 VDD1 + 0.3 V
A, B, C, D, E, F, G, H, RFP and RFN
CD/DVD, H/L and R/W
−0.3
−0.3
VDD2 + 0.3 V
DD1 + 0.3 V
V
CHARACTERISTICS
DD1 = VDD2 = 5 V; pin R/W = LOW; pin H/L = LOW; pin CD/DVD = HIGH; VA to VH = 2.5 V; VRFP = VRFN = 2.5 V;
measured in dark conditions; Tamb = 25 °C; unless otherwise specified.
V
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD1
VDD2
IDD1
supply voltage front-end note 1
supply voltage back-end note 1
4.5
5.0
5.0
5.5
V
4.5
5.5
V
supply current front-end dark conditions; note 2
writing DVD+R
12.8
30.9
12.9
11.4
31.9
31.3
31.7
30.9
4.5
17.4
41.2
17.2
15.2
42.5
41.8
42.2
41.2
6.0
21.3
51.5
21.5
19.0
53.1
52.2
52.8
51.5
7.5
mA
mA
mA
mA
mA
mA
mA
mA
mA
writing CD-R
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
IDD2
supply current back-end dark conditions;
Tamb = 0 to 70 °C; note 2
Temperature range
Tamb
ambient temperature
0
−
70
°C
Central segment outputs; pins A, B, C, and D
B−3dB
channel A, B, C, and D
RF bandwidth
Io = 1 mA
writing DVD+R
writing CD-R
135
225
240
115
135
100
135
80
170
280
300
145
170
125
170
105
205
340
360
175
205
155
205
130
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
2003 Dec 01
10
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
+5
UNIT
Msens
channel A, B, C and D
matching sensitivity
note 3
0
−
%
Vo
output voltage range
output current
1
−
3
−
V
DD2 − 1
V
Io
excluding writing CD-R
dark conditions;
0
6.5
mA
µA
Io(offset)
output offset current
−7
+15
T
amb = 0 to 70 °C
Io(clip)
In(o)
output current clipping
level
CD-R writing; note 4
5
−
8
mA
spot noise output current Io = 2.0 mA; fo = 50 MHz
reading DVD-ROM
−
−
−
−
480
−
−
−
−
pA/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
reading CD-ROM
1660
685
reading DVD+RW
reading CD-RW
1900
Differential RF outputs; pins RFP and RFN
B−3dB
channel RFP and RFN
RF bandwidth
Io = 1 mA
writing DVD+R
135
235
290
120
135
95
170
290
360
150
170
120
175
105
205
350
435
180
210
145
210
130
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
writing CD-R
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
Io = 1 mA; fi = 13 to 130 MHz
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
140
80
∆td(p)
phase delay variation
group delay variation
−
−
−
−
0.15
1
−
−
−
−
ns
ns
ns
ns
0.25
1.3
∆td(g)
Io = 1.5 mA;
fi = 2.6 to 130 MHz
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
−
−
−
−
1
0
0.4
0.8
0.6
1.2
−
−
−
−
−
ns
ns
ns
ns
V
Vo
output voltage range
output current
V
DD2 − 1
Io
2
8
mA
Io(offset)
output offset current
dark conditions;
Tamb = 0 to 70 °C
pin RFP
pin RFN
13
−
−
0
0
µA
µA
−14
2003 Dec 01
11
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
In(o)
spot noise differential
output current
Io = 2 mA; fo = 50 MHz
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
−
−
−
−
360
−
−
−
−
pA/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
1250
515
1400
Satellite segment outputs; pins E, F, G and H
B−3dB
channel E, F, G and H
RF bandwidth
Io = 1 mA
writing DVD+R
writing CD-R
65
70
90
60
85
60
80
40
0
85
105
110
140
90
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
%
90
writing DVD+RW
writing CD-RW
reading DVD-ROM
reading CD-ROM
reading DVD+RW
reading CD-RW
note 5
115
75
110
75
135
90
100
50
120
60
Msens
channel E, F, G and H
matching sensitivity
−
+5
Vo
output voltage range
output current
1
0
−
V
DD2 − 1
V
Io
excluding writing CD-R
0.75
−
6.5
+31
mA
µA
Io(offset)
output offset current
dark conditions;
−25
Tamb = 0 to 70 °C
Io(clip)
current clipping level
CD-R writing; note 4
5
−
8
mA
ns
Settling time; note 6
tst(max)
settling time
CD-R write mode (central and
satellite channels);
Iset > 300 µA; accuracy set
level within ±5%; ratio write to
read peak level factor <50
−
−
−
−
< 22
−
CD-R write mode (differential
channels RFP and RFN);
Iset > 70 µA; accuracy set level
within ±5%; ratio write to read
peak level factor <50
< 22
< 10
< 15
−
−
−
ns
ns
ns
CD-RW and DVD+RW write
modes (all channels); no clip;
Iset > 70 µA; accuracy set level
within ±5%; ratio write to read
peak level factor 2; Io < Io(max)
DVD+R write mode (all
channels); no clip;
Iset > 100 µA; accuracy set
level within ±5%; ratio write to
read peak level factor 20;
Io < Io(max)
2003 Dec 01
12
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SYMBOL
Common mode ripple, all channels
CMR common mode ripple
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Io = 2 mA (peak); fo up to
65 MHz; note 7
−20
−
−
dB
Control inputs; pins R/W, H/L and CD/DVD
Zi(pd)
pull-down input
impedance
−
230
−
kΩ
VIL
LOW-level input voltage
HIGH-level input voltage
gain transition time
−0.2
2.1
−
−
−
2
+1
V
VIH
tt(G)
VDD1 + 0.2 V
−
µs
Sensitivity; note 8
sDVD+R output current sensitivity writing; λ = 655 nm; note 9
for DVD+R
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
1.44
4.76
0.54
−
−
−
A/W
A/W
A/W
I
sCD-R
output current sensitivity writing; λ = 785 nm; note 10
for CD-R
Io(cen)
−
−
−
43.2
173
−
−
−
A/W
A/W
A/W
Io(sat)
Io(RFP), Io(RFN)
1.08
sDVD+RW
output current sensitivity writing; λ = 655 nm; note 9
for DVD+RW
Io(cen)
−
−
−
2.88
11.5
1.08
−
−
−
A/W
A/W
A/W
Io(sat)
I
o(RFP), Io(RFN)
reading; λ = 655 nm; note 11
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
43.2
173
−
−
−
A/W
A/W
A/W
I
16.2
sCD-RW
output current sensitivity writing; λ = 785 nm; note 9
for CD-RW
Io(cen)
−
−
−
5.67
23.0
2.16
−
−
−
A/W
A/W
A/W
Io(sat)
I
o(RFP), Io(RFN)
reading; λ = 785 nm; note 11
Io(cen)
Io(sat)
o(RFP), Io(RFN)
−
−
−
173
691
64.8
−
−
−
A/W
A/W
A/W
I
sDVD-ROM output current sensitivity reading; λ = 655 nm; note 11
for DVD-ROM
Io(cen)
−
−
−
21.6
86.4
8.1
−
−
−
A/W
A/W
A/W
Io(sat)
Io(RFP), Io(RFN)
2003 Dec 01
13
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
sCD-ROM
output current sensitivity reading; λ = 785 nm; note 11
for CD-ROM
Io(cen)
−
−
−
86.4
−
−
−
A/W
Io(sat)
346
A/W
A/W
I
o(RFP), Io(RFN)
32.4
Notes
1. The supplies are connected internally by diodes. Differences between the supply voltages should not exceed 0.3 V.
2. Estimated average power consumption (typical value):
P = VDD × (1.4 × Io(av) × 9 + IDD1 + IDD2) where Io(av) is the average output current.
Conditions: VDD = VDD1 = VDD2 and Io < 8 mA.
I
o(max) – Io(min)
3. Outputs A, B, C and D: Io = 1 mA output current. Definition of matching:
– V ref × I(o)av where
-----------------------------------------------------
1
(IA + IB + IC + I ) ×
--
D
4
Vref = Vref1 = Vref2 (see Fig.7) and I(o)av is the average output current.
4. The clipping function is active in the CD-R write mode for the segment outputs (not for outputs RFP and RFN) and
in the read mode for all outputs. In the read mode, the clipping level is increased to 8 mA.
I
o(max) – Io(min)
5. Outputs E, F, G and H: I = 1.5 mA output current. Definition of matching:
– V ref × I(o)av where
-----------------------------------------------------
o
1
(IE + IF + IG + I ) ×
--
H
4
V
ref = Vref1 = Vref2 (see Fig.7) and I(o)av is the average output current.
sens = ±7% for reading CD-RW, CD-ROM, DVD+RW and writing CD-R mode.
6. The settling time includes the recovery time.
RFP + IRFN
M
I
7. Definition: 20log ×
-----------------------------
RFP – IRFN
I
8. The sensitivity of the TZA1045 is specified in A/W because it has current outputs. In the application diagram
(see Fig.7) the resistors of 150 Ω convert the currents into voltages (V/W). The maximum absolute spread is ±10%.
9. Writing without clipping.
10. Writing with clipping in CD-R mode for all segment outputs (not outputs RFP and RFN).
11. Reading with clipping active and switched to a level of typical 8 mA.
2003 Dec 01
14
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
APPLICATION INFORMATION
An application example for the TZA1045 is shown in Fig.7. The satellite segment pins are cross-coupled to be suitable
for rewritable applications.
V
DD
150 150
150 150
Ω
Ω
Ω
Ω
CD/DVD H/L R/W
E
H
F
G
15
2
14
3
12
11
6
9
8
16
1
13
10
7
TZA1045
4
5
B
C
D
A
150 150
75
Ω
75
Ω
150 150
Ω
Ω
Ω
Ω
V
V
ref1
ref2
MGU618
RFP
RFN
Fig.7 Application example.
2003 Dec 01
15
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
PACKAGE OUTLINES
SSOP16T: plastic shrink small outline package/transparent; 16 leads (straight); body width 4.4 mm
SOT734-1
D
E
A
D
X
w
y
c
H
v
M
A
pin 1 index
E
Z
9
16
A
6
A
7
A
2
pin 1 index
L
detail X
1
8
b
w
M
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(2)
(1)
(1)
UNIT
A
A
A
b
c
D
D
E
e
H
E
L
v
w
y
Z
2
6
7
p
w
1.3 0.37 0.25 0.32 0.25
1.1 0.17 0.15 0.20 0.13
5.3
5.1
2.1
1.9
4.5
4.3
6.7
6.5
0.48
0.18
mm
1.1
0.65
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
2. Sensor area
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
01-11-09
SOT734-1
2003 Dec 01
16
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
HTSSON16T: plastic thermal enhanced thin shrink small outline package/transparent; no leads;
16 terminals; body 6.6 x 5.2 x 1.1 mm
SOT814-1
X
D
B
D
1
2
A
D
A
E
E
E
1
2
c
detail X
terminal 1
index area
C
e
1
y
y
v
M
M
C
C
A
B
C
1
e
b
w
1
8
L
terminal 1
index area
E
h
16
9
0
2.5
5 mm
D
h
scale
DIMENSIONS (mm are the original dimensions)
A
max.
D
min.
E
min.
2
2
UNIT
b
c
D
D
D
E
E
E
h
e
e
L
v
w
y
y
1
h
1
1
1
0.33
0.23
0.5
0.3
5.3
5.1
4.5
4.0
5.15
4.95
6.7
6.5
4.2
3.7
5.4
5.2
mm
1.1
1.50
1.00
0.65 4.55
0.3
0.1
0.05 0.05
0.1
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
- - -
JEITA
03-10-10
03-11-19
SOT814-1
- - -
- - -
2003 Dec 01
17
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
SOLDERING
To overcome these problems the double-wave soldering
method was specifically developed.
Introduction to soldering surface mount packages
If wave soldering is used the following conditions must be
observed for optimal results:
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Driven by legislation and environmental forces the
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
worldwide use of lead-free solder pastes is increasing.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 270 °C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
• below 225 °C (SnPb process) or below 245 °C (Pb-free
process)
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
– for all BGA, HTSSON-T and SSOP-T packages
Manual soldering
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
volume ≥ 350 mm3 so called thick/large packages.
• below 240 °C (SnPb process) or below 260 °C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm3 so called small/thin packages.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
2003 Dec 01
18
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
not suitable
REFLOW(2)
BGA, HTSSON..T(3), LBGA, LFBGA, SQFP, SSOP..T(3), TFBGA,
USON, VFBGA
suitable
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON,
HTQFP, HTSSOP, HVQFN, HVSON, SMS
PLCC(5), SO, SOJ
not suitable(4)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(5)(6) suitable
SSOP, TSSOP, VSO, VSSOP
CWQCCN..L(8), PMFP(9), WQCCN..L(8)
not recommended(7)
suitable
not suitable
not suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
9. Hot bar or manual soldering is suitable for PMFP packages.
2003 Dec 01
19
Philips Semiconductors
Preliminary specification
Photodiode and amplifier IC for
CD and DVD applications
TZA1045
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Dec 01
20
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R04/04/pp21
Date of release: 2003 Dec 01
Document order number: 9397 750 12185
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