UAA2077BM [NXP]
2 GHz image rejecting front-end; 2 GHz的图像拒绝前端
| 型号： | UAA2077BM |
| 厂家： | 
NXP |
| 描述： | 2 GHz image rejecting front-end |
| 文件： | 总16页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
UAA2077BM
2 GHz image rejecting front-end
1995 Dec 13
Product specification
Supersedes data of July 1995
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in
I and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.
FEATURES
• Low-noise, wide dynamic range amplifier
• Very low noise figure
• Dual balanced mixer for over 25 dB on-chip image
rejection
For instance, signals presented at the RF input at the
LO + IF frequency are rejected through this signal
processing while signals at the LO − IF frequency can form
the IF signal. An internal switch enables the upper or lower
image frequency to be rejected.
• IF I/Q combiner at 188 MHz
• On-chip quadrature network
• Down-conversion mixer for closed-loop transmitters
• Independent TX/RX fast ON/OFF power-down modes
• Very small outline packaging
The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection. The IF driver has differential
open-collector type outputs.
• Very small application (no image filter).
APPLICATIONS
The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The centre frequency of the phase shifter is
adjustable for maximum image rejection in a given band.
The all-pass filters outputs are buffered before being fed to
the receive mixers.
• 1800 MHz front-end for DCS1800 hand-portable
equipment
• Compact digital mobile communication equipment
• TDMA receivers e.g. PCS and RF-LANS.
The transmit section consists of a low-noise amplifier and
a down-conversion mixer. In the transmit mode an internal
LO buffer is used to drive the transmit IF down-conversion
mixer.
GENERAL DESCRIPTION
UAA2077BM contains both a receiver front-end and a high
frequency transmit mixer intended to be used in mobile
telephones. Designed in an advanced BiCMOS process it
combines high performance with low power consumption
and a high degree of integration, thus reducing external
component costs and total front-end size.
All RF and IF inputs or outputs are balanced.
Pins RXON, TXON and SXON enable a selection to be
made of whether to reject the upper or lower image
frequency and control of the different power-down modes.
Special care has been taken for fast power-up switching.
The main advantage of the UAA2077BM is its ability to
provide over 25 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
MIN.
3.6
TYP.
MAX.
5.3
UNIT
supply voltage
4.0
V
ICC(RX)
ICC(TX)
ICC(PD)
Tamb
receive supply current
21.5
10.5
−
26.5
13.5
−
33.5
18
mA
mA
µA
°C
transmit supply current
supply current in power-down
operating ambient temperature
50
−30
+25
+85
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
UAA2077BM
1995 Dec 13
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
2
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
BLOCK DIAGRAM
n.c.
n.c.
TXON
11
RXON
12
SXON
9
4
7
o
+45
UAA2077BM
MIXER
3
V
CCLNA
17
IFA
5
6
RFINA
RFINB
IF
LNA
o
+135
COMBINER
18
IFB
low-noise
amplifier
8
LNAGND
RECEIVE SECTION
TRANSMIT SECTION
15
10
V
CCLO
QUADRATURE
PHASE
SHIFTER
V
QUADLO
MIXER
19
TXOA
16
TXOB
LOGND
20
LOCAL OSCILLATOR
SECTION
14
13
2
1
MGD154
LOINA LOINB
TXINB TXINA
Fig.1 Block diagram.
3
1995 Dec 13
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
PINNING
SYMBOL
PIN
DESCRIPTION
TXINA
TXINB
VCCLNA
1
2
3
transmit mixer input A (balanced)
transmit mixer input B (balanced)
supply voltage for LNA, IF parts
and TX mixer
n.c.
4
5
6
7
8
not connected
RFINA
RFINB
n.c.
RF input A (balanced)
RF input B (balanced)
not connected
handbook, halfpage
TXINA
TXINB
1
2
20 TXOB
19 TXOA
18 IFB
V
3
LNAGND
ground for LNA, IF parts and TX
mixer
CCLNA
n.c.
4
17 IFA
SXON
9
SX mode enable (see Table 1)
RFINA
RFINB
n.c.
5
16 LOGND
UAA2077BM
VQUADLO
10 input voltage for LO quadrature
trimming
6
15 V
CCLO
7
14 LOINA
13 LOINB
12 RXON
11 TXON
TXON
RXON
LOINB
LOINA
VCCLO
LOGND
IFA
11 TX mode enable (see Table 1)
12 RX mode enable (see Table 1)
13 LO input B (balanced)
14 LO input A (balanced)
15 supply voltage for LO parts
16 ground for LO parts
LNAGND
SXON
8
9
V
10
QUADLO
MGD155
17 IF output A (balanced)
18 IF output B (balanced)
IFB
TXOA
19 transmit mixer IF output A
(balanced)
TXOB
20 transmit mixer IF output B
(balanced)
Fig.2 Pin configuration.
1995 Dec 13
4
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
The IF output is differential and of the open-collector type.
Typical application will load the output with a differential
1 kΩ load; for example, a 1 kΩ resistor load at each IF
output, plus a differential 2 kΩ load consisting of the input
impedance of the IF filter or the input impedance of the
matching network for the IF filter. The power gain refers to
the available power on this 2 kΩ load. The path to VCC for
the DC current should be achieved via tuning inductors.
The output voltage is limited to VCC + 3Vbe or 3 diode
forward voltage drops.
FUNCTIONAL DESCRIPTION
Receive section
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.
The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.
Fast switching, ON/OFF, of the receive section is
controlled by the hardware input RXON.
Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.
IF
o
+45
amplifier
MIXER
MIXER
V
CCLNA
IFA
RFINA
RFINB
IF
COMBINER
IFB
LNA
LNAGND
IF
o
amplifier
+135
MGD157
RXON
LOIN
Fig.3 Block diagram, receive section.
1995 Dec 13
5
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
Local oscillator section
Transmit mixer
The local oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.
This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF which is
down-converted to a modulated transmit IF frequency,
phase-locked with the baseband modulation.
The centre frequency of the receive band is adjustable by
the voltage on pin VQUADLO. This should be achieved by
connecting a resistor between VQUADLO and VCC. Over
25 dB of image rejection can be obtained by an optimum
resistor value.
The IF outputs are high-impedance (open-collector type).
Typical application will load the output with a differential
500 Ω load; for example, a 500 Ω resistor load, connected
to VCC for DC path, at each TX output, plus a differential
1 kΩ consisting of the input impedance of the matching
network for the following TX part. The mixer can also be
used for frequency up-conversion.
A synthesizer-ON mode (SX mode) is used to power-up all
LO input buffers, thus minimizing the pulling effect on the
external VCO when entering the receive or transmit mode.
This mode is active when SXON = 1.
Fast switching ON/OFF, of the transmit section is
controlled by the hardware input TXON.
to RX
handbook, halfpage
V
handbook, halfpage
TX MIXER
CCLO
TXOA
TXOB
LOIN
QUAD
V
QUADLO
LOGND
MGD153
to TX
TXON
TXINB TXINA
MGD156
LOINA LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
Table 1 Control of power status
EXTERNAL PIN LEVEL
CIRCUIT MODE OF OPERATION
TXON
RXON
SXON
LOW
LOW
HIGH
LOW
LOW
HIGH
HIGH
HIGH
LOW
HIGH
LOW
LOW
HIGH
LOW
HIGH
HIGH
LOW
LOW
LOW
HIGH
HIGH
HIGH
LOW
HIGH
power-down mode
RX mode, fLO < fRF: receive section and LO buffers to RX on
TX mode: transmit section and LO buffers to TX on
SX mode: complete LO section on
SRX mode, fLO < fRF: receive section on and SX mode active
STX mode: transmit section on and SX mode active
RX mode, fLO > fRF: receive section and LO buffers to RX on
SRX mode, fLO > fRF: receive section on and SX mode active
1995 Dec 13
6
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
MIN.
MAX.
9.0
UNIT
supply voltage
−
V
V
∆GND
Pi(max)
Tj(max)
Pdis(max)
Tstg
difference in ground supply voltage applied between LOGND and LNAGND −
0.6
maximum power input
−
−
−
+20
+150
250
dBm
°C
maximum operating junction temperature
maximum power dissipation in quiet air
storage temperature
mW
°C
−65
+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
120
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
K/W
HANDLING
All pins withstand the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5), except pins LOINA and
LOINB which withstand 1500 V (class 1).
1995 Dec 13
7
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
DC CHARACTERISTICS
V
CC = 4 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
Pins: VCCLNA and VCCLO
CONDITIONS
MIN.
TYP. MAX. UNIT
VCC
supply voltage
over full temperature range
3.6
4.0
26.5
13.5
−
5.3
33.5
18
50
10
−
V
ICC(RX)
ICC(TX)
ICC(PD)
ICC(SX)
ICC(SRX)
ICC(STX)
supply current in RX mode
supply current in TX mode
supply current in power-down mode
supply current in SX mode
supply current in SRX mode
supply current in STX mode
21.5
10.5
−
mA
mA
µA
mA
mA
mA
5.5
−
7.5
29
−
18
−
Pins: RXON, TXON and SXON
Vth
VIH
VIL
IIH
CMOS threshold voltage
HIGH level input voltage
LOW level input voltage
note 1
−
1.25
−
V
0.7VCC
−0.3
−1
−
−
−
−
VCC
0.8
+1
+1
V
V
HIGH level static input current
LOW level static input current
pins at VCC − 0.4 V
µA
µA
IIL
pins at 0.4 V
−1
Pins: RFINA and RFINB
VI
DC input voltage level
receive section on
−
−
−
−
−
2.0
2.5
2.0
0.9
3.3
−
−
−
−
−
V
Pins: IFA and IFB
IO
DC output current
receive section on
mA
V
Pins: TXINA and TXINB
VI
DC input voltage level
transmit section on
Pins: TXOA and TXOB
IO
DC output current
transmit section on
mA
V
Pins: LOINA and LOINB
VLOIN
DC input voltage level
RXON, TXON or SXON HIGH
Note
1. The referenced inputs should be connected to a valid CMOS input level.
1995 Dec 13
8
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
AC CHARACTERISTICS
V
CC = 4 V; Tamb = −30 to +85 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS
Receive section (receive section enabled)
MIN. TYP. MAX.
UNIT
RiRX
RF input resistance (real part of balanced; at 1850 MHz
the parallel input impedance)
−
−
60
1
−
−
Ω
CiRX
RF input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1850 MHz
pF
fiRX
RF input frequency
1800
11
−
2000 MHz
RLiRX
GCPRX
return loss on matched RF input balanced; note 1
15
20
−
dB
dB
conversion power gain
differential RF inputs to differential 17
23
IF outputs loaded to 1 kΩ
differential
Grip
gain ripple as a function of RF
frequency
between 1805 and 1880 MHz;
note 2
−
0.2
−
dB
∆G/T
gain variation with temperature Tamb = −30 to +25 °C; note 2
Tamb = +25 to +85 °C; note 2
−20
−40
0
+10
−20
−
mdB/°C
mdB/°C
dBm
−30
−23
CP1RX
DES3
1 dB compression point
differential RF inputs to differential −26
IF outputs; note 1
3 dB desensitisation point
interferer frequency offset: 3 MHz;
differential RF inputs to differential
IF outputs; note 1
−
−
−30
−27
−
−
dBm
dBm
interferer frequency offset: 20 MHz;
differential RF inputs to differential
IF outputs; note 1
IP2DRX
IP3RX
NFRX
ZLRX
2nd-order intercept point
3rd-order intercept point
overall noise figure
differential RF inputs to differential +15
IF outputs; note 2
+22
−17
4.3
1
−
dBm
dBm
dB
differential RF inputs to differential −23
IF outputs; note 2
−
differential RF inputs to differential
IF outputs; notes 2 and 3
−
−
5.0
−
typical application IF output load balanced
impedance
kΩ
RLiRX
foRX
return loss on matched IF input balanced; note 1
IF frequency range
11
15
188
−
−
dB
170
20
210
−
MHz
dB
IRRX
rejection of image frequency
VQUADLO tuned
fLO < fRF; fIF = 188 MHz; note 4
25
32
−
dB
Local oscillator section (receive section enabled)
fiLO
LO input frequency
1600
−
2200 MHz
RiLO
LO input resistance (real part of balanced
the parallel input impedance)
−
45
−
Ω
CiLO
LO input capacitance
(imaginary part of the parallel
input impedance)
balanced
−
2
−
pF
1995 Dec 13
9
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
dB
RLiLO
return loss on matched input
(including standby mode)
note 1
9
12
−
∆RLiLO
return loss variation between
SX, SRX and STX modes
linear S11 variation; note 1
−
5
−
mU
PiLO
RILO
LO input power level
reverse isolation
−6
−3
+3
dBm
dB
LOIN to RFIN at LO frequency;
note 1
40
−
−
Rtune
image rejection tuning resistor
connected between VQUADLO and
VCC
0
4.7
−
kΩ
Transmit section (transmit section enabled)
ZLTX
TX IF typical load impedance
balanced
note 1
−
500
15
−
−
Ω
RLoTX
return loss on matched TX IF
output
11
dB
RiTX
TX RF input resistance
(real part of the parallel input
impedance)
balanced; at 1750 MHz
balanced; at 1750 MHz
−
−
65
1
−
−
Ω
CiTX
TX RF input capacitance
(imaginary part of the parallel
input impedance)
pF
fiTX
TX input frequency
1600
10
−
2000
−
MHz
dB
RLiTX
GCPTX
return loss on matched TX input note 1
15
9
conversion power gain
differential transmitter inputs to
6
12
dB
differential transmitter IF outputs
loaded with 500 Ω differential
foTX
TX output frequency
1 dB input compression point
2nd-order intercept point
3rd-order intercept point
noise figure
50
−25
−
−
400
−
MHz
dBm
dBm
dBm
dB
CP1TX
IP2TX
IP3TX
NFTX
ITX
note 2
−22
+22
−16
5
note 2
−
note 2
−20
−
−
double sideband; notes 2 and 3
LOIN to TXIN; note 1
TXIN to LOIN; note 1
9
isolation
40
40
−
−
dB
RITX
reverse isolation
−
−
dB
Timing
tstu
start-up time of each block
1
5
20
µs
Notes
1. Measured and guaranteed only on UAA2077BM demonstration board at Tamb = +25 °C.
2. Measured and guaranteed only on UAA2077BM demonstration board.
3. This value includes printed-circuit board and balun losses.
4. Measured and guaranteed only on UAA2077BM demonstration board at Tamb = +25 °C, with a 4.7 kΩ resistor
connected between VQUADLO and VCC
.
1995 Dec 13
10
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
APPLICATION INFORMATION
BM0G14
a n d b l l p a g e w i d t h
1995 Dec 13
11
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.65
1.0
0.2
0.25
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
90-04-05
95-02-25
SOT266-1
1995 Dec 13
12
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1995 Dec 13
13
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Dec 13
14
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
NOTES
1995 Dec 13
15
Philips Semiconductors – a worldwide company
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Chile: Av. Santa Maria 0760, SANTIAGO,
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Tel. (03)301 6312, Fax. (03)301 42 43
Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,
Tel. (0)8-632 2000, Fax. (0)8-632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. (02)773 816, Fax. (02)777 6730
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. (852)2319 7888, Fax. (852)2319 7700
Tel. (01)488 2211, Fax. (01)481 77 30
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West
Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444
Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,
77621 BOGOTA, Tel. (571)249 7624/(571)217 4609,
Fax. (571)217 4549
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. (66) 2 745-4090, Fax. (66) 2 398-0793
Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0212)279 27 70, Fax. (0212)282 67 07
Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,
Denmark: Prags Boulevard 80, PB 1919, DK-2300
COPENHAGEN S, Tel. (45)32 88 26 36, Fax. (45)31 57 19 49
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. (358)0-615 800, Fax. (358)0-61580 920
France: 4 Rue du Port-aux-Vins, BP317,
92156 SURESNES Cedex,
Tel. (01)4099 6161, Fax. (01)4099 6427
Germany: P.O. Box 10 51 40, 20035 HAMBURG,
252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991
United Kingdom: Philips Semiconductors LTD.,
276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. (0181)730-5000, Fax. (0181)754-8421
United States:811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (040)23 53 60, Fax. (040)23 53 63 00
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. (01)4894 339/4894 911, Fax. (01)4814 240
India: Philips INDIA Ltd, Shivsagar Estate, A Block,
Dr. Annie Besant Rd. Worli, Bombay 400 018
Tel. (022)4938 541, Fax. (022)4938 722
Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,
P.O. Box 4252, JAKARTA 12950,
Tel. (02)70-4044, Fax. (02)92 0601
Tel. (021)5201 122, Fax. (021)5205 189
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. (01)7640 000, Fax. (01)7640 200
Italy: PHILIPS SEMICONDUCTORS S.r.l.,
Piazza IV Novembre 3, 20124 MILANO,
Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557
Japan: Philips Bldg 13-37, Kohnan2-chome, Minato-ku, TOKYO 108,
Tel. (03)3740 5130, Fax. (03)3740 5077
Korea: Philips House, 260-199 Itaewon-dong,
Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. +31-40-2724825
Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,
Tel. 9-5(800)234-7381, Fax. (708)296-8556
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. (040)2783749, Fax. (040)2788399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
SCDS47
© Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Printed in The Netherlands
Tel. (022)74 8000, Fax. (022)74 8341
Pakistan: Philips Electrical Industries of Pakistan Ltd.,
Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. (021)587 4641-49,
Fax. (021)577035/5874546
413061/1100/03/pp16
Date of release: 1995 Dec 13
9397 750 00526
Document order number:
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