UAA3545 [NXP]
Fully integrated DECT transceiver; 完全集成DECT收发器
| 型号： | UAA3545 |
| 厂家： | 
NXP |
| 描述： | Fully integrated DECT transceiver |
| 文件： | 总28页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
UAA3545
Fully integrated DECT transceiver
Product specification
2001 Sep 06
File under Integrated Circuits, IC17
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
FEATURES
The synthesizer’s main divider is driven by the prescaler
output in the range of 1880 to 1930 MHz and is
programmed via a 3-wire serial bus. The reference divider
ratio is programmable to 4, 8, 12 or 16. Outputs of the
main and reference dividers drive a phase comparator
where a charge pump produces phase error current pulses
for integration in an external loop filter (only a passive loop
filter is necessary). The charge-pump current is set to
4 mA for fast switching.
• Economical solution for a radio in DECT cordless
telephones
• Integrated low phase noise VCO with no production
tuning required
• Fully integrated receiver with high sensitivity
• Dedicated DECT PLL synthesizer
• 3 dBm output preamplifier with an integrated switch
• 3-line serial interface bus
The VCO is powered from an internally regulated voltage
source and includes integrated variable capacitance
diodes and integrated coils. Its tuning range is guaranteed.
The VCO and the synthesizer are switched-on one slot
before the active slot to lock the VCO to the required
channel frequency. Immediately before the active slot, the
synthesizer is switched-off to allow open loop modulation
of the VCO during transmission. When opening the loop,
frequency pulling (due to switching-off the synthesizer)
can be maintained within the DECT specification.
• Low current consumption from a 3.2 V supply
• Compatible with Philips Semiconductors baseband
chips (PCD509xx and PCD80xxx)
• Reduced number of control signals.
APPLICATIONS
• DECT cordless telephones: 1880 to 1930 MHz.
The device is designed to operate from a 3.2 V nominal
supply. Separate power and ground pins are provided for
the different sections of the circuit. Ground leads should be
short-circuited externally to prevent large currents flowing
across the die and causing damage. All VCC supplies
(VCC(REG), VCC(SYN), VCC(RX) and VCC(TX)) must be at the
same potential (VCC).
GENERAL DESCRIPTION
The UAA3545 BiCMOS device is a low power, highly
integrated circuit, for Digital Enhanced Cordless
Telecommunication (DECT) applications.
It features a fully integrated receiver, from antenna filter
output to the demodulated data output, a fully integrated
VCO, a synthesizer to implement a phase-locked loop for
DECT channel frequencies and a TX preamplifier to drive
the external transmit power amplifier (CGY20xx series or
UAA359x series of Philips integrated circuits).
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
UAA3545HL
LQFP32
plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm
SOT401-1
2001 Sep 06
2
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
QUICK REFERENCE DATA
VCC = 3.2 V; Tamb = 25 °C; characteristics with a typical value only are not tested; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
VCC(syn) supply voltage 3.2 3.6 V
UNIT
,
All VCC supplies 3.0
must be at the
VCC(reg)
VCC(RX)
VCC(TX)
,
,
same potential
(VCC
)
ICC(SYN)
synthesizer supply current
synthesizer ON
VCO ON
−
−
5
7
mA
mA
ICC(REG)
VCO, buffer and prescaler regulator
supply current
14
17
ICC(RX)
ICC(TX)
ICC(pd)
fo(RF)
receiver supply current
−
36
12
10
−
44
mA
transmit preamplifier supply current
total supply current in Power-down mode
RF output frequency
−
15
mA
−
100
1930
−
µA
1880
MHz
MHz
f(i)XTAL
crystal reference input frequency
−
3.456,
6.912,
10.368or
13.824
fPC
phase comparator frequency
ambient temperature
−
864
−
kHz
Tamb
−10
−
+60
°C
2001 Sep 06
3
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
BLOCK DIAGRAM
V
V
RSSI
12
CC(RX)
CC(TX)
22
RXGND TXGND
13 19
16
SLIC = 1
0
15
SLIC = 1
1 kΩ
RFA
RFB
7
LNA
LIMITER
DEMODULATOR
14
×
RDATAP
0
SLIC = 1
9
DATAM
0
UAA3545
(1)
11
SLICER
SLCCTR
20
21
TXA
TXB
PRESCALER
AMP
26
10
VREGI
1
VCO_ON
R_ON
SYNGND
31
30
27
17
CONTROL
LOGIC
VREGO
VCO
REGULATOR
SYNTHESIZER
REGGND
VCOGND
8
6
4
28 29
TEST2
18 23
DIVGND
24
5
3
32
25
2
MGW108
V
V
V
S_CLK
S_DATA
XTAL
CC(SYN)
MOD
CC(REG)
CP/VCO
S_EN
TEST1
TEST3 VREGDIV
tune
(1) SLCCTR ‘switches’ shown in position SLCCTR = LOW.
Fig.1 Block diagram.
2001 Sep 06
4
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
PINNING
SYMBOL
VCO_ON
PIN
DESCRIPTION
1
VCO section power-on control; note 1
regulator positive supply voltage
synthesizer positive supply voltage
3-wire bus data signal input
VCC(REG)
VCC(SYN)
S_DATA
XTAL
2
3
4
5
reference frequency input; note 2
3-wire bus enable signal input
demodulator output voltage
S_EN
6
RDATAP
S_CLK
DATAM
SYNGND
SLCCTR
RSSI
7
8
3-wire bus clock signal input
switched demodulator output voltage
synthesizer ground
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
DATAM switch control signal (see Fig.1)
received signal strength intensity voltage output
receiver ground
RXGND
RFB
received signal input B
RFA
received signal input A
VCC(RX)
R_ON
receiver positive supply voltage
receiver power-on control; note 3
TEST input 3 (must be connected to GND)
transmitter ground
TEST3
TXGND
TXA
transmit amplifier output A
TXB
transmit amplifier output B
VCC(TX)
DIVGND
VREGDIV
VMOD
transmitter positive supply voltage
divider ground
divider regulated supply voltage
VCO analog modulation voltage input
VCO regulated voltage input
VCO ground
VREGI
VCOGND
TEST1
TEST2
REGGND
VREGO
CP/VCOtune
TEST input 1 (must not be connected)
TEST input 2 (must not be connected)
regulator ground
VCO section regulated voltage output
charge-pump output/VCO tuning input
Notes
1. Corresponds to the S_PWR of the baseband chip (see Section “Operating modes” for more details).
2. Corresponds to the REF_CLK of the baseband chip.
3. See Section “Operating modes” for more details.
2001 Sep 06
5
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
VCO_ON
CC(REG)
1
2
3
4
5
6
7
8
24 VREGDIV
23 DIVGND
V
V
22 V
CC(TX)
CC(SYN)
S_DATA
21 TXB
UAA3545HL
XTAL
S_EN
20 TXA
19 TXGND
18 TEST3
17 R_ON
RDATAP
S_CLK
FCA242
Fig.2 Pin configuration.
2001 Sep 06
6
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
FUNCTIONAL DESCRIPTION
Transmit chain
PHASE COMPARATOR
The phase comparator is driven by the output of the main
and reference dividers. It produces current pulses at
pin CP/VCOtune, the pulse duration being the difference in
arrival time of current pulse edges from the two dividers.
If the main divider edge arrives first, pin CP sinks current.
If the reference divider edge arrives first, pin CP sources
current. The DC value of the charge-pump current is
defined by an internal resistor. Additional circuitry is
included to ensure the gain of the phase detector remains
linear even for small phase errors.
VCO AND PRESCALER
The fully integrated VCO operates at a multiple of the
DECT frequency. It is supplied by an on-chip voltage
regulator to minimize frequency disturbances due to
supply voltage variations. The VCO signal is fed into a
prescaler. A large difference between transmitted and
VCO frequencies reduces transmitter-oscillator coupling
problems.
The output of the prescaler drives the synthesizer main
divider. The divider output can also be switched to either
the TX preamplifier or the RX LO output buffer. The high
isolation obtained from the prescaler ensures very small
frequency changes when turning-on the TX preamplifier or
the RX section. In TX mode, the oscillator can be
Serial programming bus
A simple 3-line unidirectional serial bus is used to
program the circuit. The three lines are data (S_DATA),
serial clock (S_CLK) and serial bus enable (S_EN). Data
sent to the device are loaded in bursts framed by S_EN.
Programming clock edges and their appropriate data bits
are ignored until S_EN goes active (LOW). The
modulated directly with GFSK-filtered data at pin VMOD
.
TX PREAMPLIFIER
programmed information is read directly by the main
divider when S_EN returns to HIGH. S_DATA and S_EN
change value on the falling edge of S_CLK.
The TX preamplifier amplifies the RF signal to a level of
3 dBm (typical) which is suitable for use with Philips
Semiconductors DECT power amplifiers.
During synthesizer operation, S_EN should be held
HIGH. Only the last 24 bits clocked into the device are
retained within the serial register. Additional leading bits
are ignored and no check is made on the number of clock
pulses. The data format is shown in Table 1. The first bit
entered is b23, the last bit is b0. For the main divider ratio,
the first bit (b5) is the Most Significant Bit (MSB).
Synthesizer
MAIN DIVIDER
The main divider is clocked by the RF signal from the
prescaler at frequencies from 1880 to 1930 MHz. Any
main divider ratio from 2176 to 2303 inclusive can be
programmed.
The serial bus enable (S_EN) must be LOW to capture
new programming data and must be HIGH to switch on the
synthesizer.
REFERENCE DIVIDER
The reference divider is clocked by the signal at pin XTAL.
The circuit operates with levels from 1.2 to 1.8 V (p-p) at a
frequency of 3.456 MHz. By programming the ‘REFD’ bits
of the serial input register (see Table 1) the reference
frequency can be set for 6.912, 10.368 or 13.864 MHz.
2001 Sep 06
7
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
Receiver
REDUCED SIGNAL MODE (MODE 2)
The receiver is a fully integrated RF + IF strip and
demodulator for DECT. It provides all the required channel
filtering over the DECT band and generates analog RSSI
and a switched output for Philips Semiconductors
baseband chip. Very few off-chip components are required
and all of these can be placed without trimming. The chip
is designed to operate with a power supply voltage that
can fall to 3.0 V. The input is the RF antenna signal
derived from the band filter or the antenna switch. The
outputs are the RSSI voltage, representing the
instantaneous signal strength and two HIGH-level
demodulator output signals RDATAP and DATAM, the
latter being switched by SLCCTR to generate the external
slicer threshold. During the blind slot, while the PLL is
settling, an internal voltage source is activated to
precharge the external capacitor (connected to
pin DATAM) to a voltage close to the required slicer
threshold.
In the reduced signal mode, the parallel control signals are
replaced by serial bus programming. To select this mode,
the bit ‘NEW’ of the internal register must be set to ‘1’ and
the bit ‘SPWR’ must be reset to ‘0’, timing is then
controlled by the S_EN signal.
After the register programming, the S_EN rising edge
programs the PLL, closes the loop, powers-on the VCO
and, if the ‘TRX’ bit = 0, turns ON the TX preamplifier.
On the falling edge of the first S_EN pulse, the loop is
opened (unless the bit ‘PLL’ is set to 1) and the receiver
switches ON if the ‘TRX’ bit = 1. A second pulse on S_EN
is required at the end of the wanted slot to power-down the
application.
The R_ON pin becomes an output in this mode, drives the
RX PIN diode and corresponds to the internal power-on
signal of the receiver.
ADVANCED SIGNAL MODE (MODE 3)
Operating modes
In the advanced signal mode, the parallel control signals
are partly replaced by serial bus programming. To select
this mode, the bit ‘NEW’ and the bit ‘SPWR’ of the internal
register must be set to ‘1’. The S_EN signal will then
control the UAA3545 timing (except for timing of a general
power-down as this is controlled by the VCO_ON input).
The operating modes available are:
• Normal mode (see Fig.3)
• Reduced signal mode (see Fig.4)
• Advanced signal mode (see Fig.5).
Selection of an operating mode is achieved via the serial
interface register (see Table 3).
The VCO_ON signal should rise at the beginning of the
previous slot. After the serial bus has been programmed,
the S_EN rising edge programs the PLL, closes the loop
and, if the ‘TRX’ bit = 0, turns ON the TX preamplifier.
On the falling edge of the first S_EN pulse, the loop is
opened (unless the ‘PLL’ bit is set to 1) and the RX section
switches ON if bit ‘TRX’ = 1. At the end of the wanted slot,
the VCO_ON goes LOW to power-down the whole IC.
In fact, the second pulse of the S_EN signal in mode 2 is
now replaced by the signal VCO_ON.
NORMAL MODE (MODE 1)
In the normal mode, the synthesizer is ON when
S_EN = HIGH and VCO_ON = HIGH, and OFF when
S_EN = LOW. When turned ON, the dividers and phase
detector are synchronized to avoid a random initial phase
error. When turned OFF, the phase detector is
synchronized with the dividers to avoid interrupting a
charge-pump pulse. This feature requires a signal to be
present for a few microseconds on the XTAL pin after
S_EN goes LOW.
The R_ON pin becomes an output in this mode, drives the
RX PIN diode and corresponds to the internal power-on
signal of the receiver.
The VCO is ON when the input signal VCO_ON is HIGH.
The polarity of VCO_ON is chosen for compatibility with
output S_PWR of the baseband chip. When the VCO is
turned ON, it takes 50 µs (typical) to reach its steady state.
The TX preamplifier is ON when bit ‘TRX’ is programmed
to ‘0’ and VCO_ON is HIGH. When the TX preamplifier is
turned ON, it takes typically 10 µs to be ready. The
receiver is turned ON when R_ON = HIGH and
VCO_ON = HIGH.
2001 Sep 06
8
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
Programming
Table 1 Serial interface register
REGISTER BIT ALLOCATION
first in
last in
b5 to b0(1)
MAIN DIVIDER(7)
b23 to b20
TEST(2)
b19
SLIC(3)
b18, b17 b16 to b10
REFD(4) TEST(2)
b9
SPWR(5)
b8
PLL(6)
b7
NEW(5)
b6
TRX
Notes
1. Bit b5 is the MSB of the main divider coefficient; this comprises bits b5, b4, b3, b2, b1, b0 and b6 (TRX).
2. Test bits b23, b22, b21, b20, b16, b15, b14, b13, b12, b11, b10 must always be programmed to 0.
3. Bit ‘SLIC’ = 1 forces the internal slicer on. In this mode, pin DATAM is connected to an external capacitor. Together
with an internal 1 kΩ resistor, it defines the low pass time constant for the slicer threshold voltage. When the
bit ‘SLIC’ = 0, the pin RDATAP is connected directly to the demodulator output and delivers an analog signal.
Pin DATAM also reflects the demodulator voltage without the internal 1 kΩ resistor when the SLCCTR pin is HIGH.
4. REFD sets the reference divider ratio to 4, 8, 12 or 16 (corresponding respectively to a reference input frequency of
3.456, 6.912, 10.368 or 13.824 MHz) (see Table 4).
5. Bits ‘NEW’, and ‘SPWR’ select the operating mode (see Table 3).
6. Bit ‘PLL’ = 1 forces the PLL to remain on when the VCO is on.
7. The main divider ratio is equal to 2176 + the programmed value (see Table 2).
Table 2 Main divider programming
BIT
MAIN DIVIDER
RATIO
SYNTHESIZED
FREQUENCY (MHz)
b5
b4
b3
b2
b1
b0
b6 (TRX)
Binary equivalent of n
2176 + n
2176
0.864 × (2176 + n)
1880.064
0
0
0
1
0
0
0
1
0
1
0
1
0
1
2223
1920.672
Table 3 Operating mode selection
BIT
OPERATING MODE
b9 (SPWR)
b7 (NEW)
0
0
1
1
0
1
0
1
normal mode (mode 1)
reduced signal mode (mode 2)
do not use
advanced signal mode (mode 3)
Table 4 Reference divider ratio programming
BIT
REFERENCE DIVIDER RATIO
REFERENCE INPUT FREQUENCY
b18
b17
0
0
1
1
0
1
0
1
4
16
8
3.456 MHz
13.824 MHz
6.912 MHz
10.368 MHz
12
2001 Sep 06
9
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCC(syn)
VCC(reg)
VCC(RX)
VCC(TX)
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.3
MAX.
+3.6
UNIT
,
,
,
All VCC supplies must be at
the same potential (VCC)
V
V
Vn
voltage on any pin
−0.3
VCC
15
Pi(RFA)(max)
,
maximum input power at
pins RFA and RFB
−
dBm
Pi(RFB)(max)
∆GND
difference in ground supply voltage
applied between all ground pins
note 1
−
0.01
V
Ptot
Tstg
Tamb
Tj
total power dissipation
storage temperature
ambient temperature
junction temperature
−
300
+125
+60
150
mW
°C
−55
−10
−
°C
°C
Note
1. Ground pins must be short-circuited externally (this is in addition to being short-circuited internally.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
All pins are compatible with “EIA/JESD22-A114-A Class1 (October 1997)”.
LATCH-UP
Pins S_DATA, TXA and TXB are susceptible to latch-up if a negative current greater than 20 mA is drawn from the
respective pin (occurs when the pin voltage is negative with respect to GND).
To avoid latch-up, pins TXA and TXB pins must be connected to VCC through coils, and the S_DATA control signal input
from the baseband IC must be kept positive with respect to GND.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
100
K/W
2001 Sep 06
10
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
CHARACTERISTICS
VCC = 3.2 V; Tamb = 25 °C; fdev = 288 kHz; f(i)XTAL = 13.824 MHz; characteristics with a typical value only are not tested;
unless otherwise specified.
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC(syn)
VCC(reg)
VCC(RX)
VCC(TX)
,
,
,
supply voltage
All VCC supplies must be at the
same potential (VCC)
3.0
3.2
3.6
V
ICC(SYN)
synthesizer supply
current
S_EN = HIGH
VCO ON
−
−
5
7
mA
mA
ICC(REG)
VCO, buffer and
prescaler regulator
supply current
14
17
ICC(RX)
ICC(TX)
receiver supply current
RX mode
TX mode
−
−
36
12
44
15
mA
mA
transmit preamplifier
supply current
ICC(pd)
total supply current in
Power-down mode
−
10
100
µA
Synthesizer
MAIN DIVIDER
fo(RF)
RF output frequency
main divider ratio
1880
2176
−
−
1930
2234
MHz
MHz
Rm
REFERENCE DIVIDER
f(i)XTAL
crystal reference input
frequency
programmed values; see Table 4
−
3.456,
6.912,
10.368
or
−
13.824
V(i)XTAL(p-p) crystal reference input
voltage (peak-to-peak
value)
square wave input;
all f(i)XTAL values
1.2
−
1.8
V
RRD
reference divider ratio
programmed values; see Table 4
f(i)XTAL = 3.456 MHz
−
−
4, 8, 12
or 16
−
−
Ri(XTAL)
input resistance (real
part of the parallel input
impedance)
17
kΩ
Ci(XTAL)
input capacitance
(imaginary part of the
parallel input
f(i)XTAL = 3.456 MHz
−
1.5
−
pF
impedance)
PHASE COMPARATOR
fPC
phase comparator
frequency
−
864
−
kHz
2001 Sep 06
11
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
CHARGE-PUMP OUTPUT
Io(CP)
charge-pump output
VCP = 1⁄2VCC
−
3.5
−
mA
current
VCO
fVCO
oscillator frequency
defined at transmit output,
Tamb = −10 to +60 °C; note 1
1880
0.3
−
−
1930
MHz
VCP/VCOtune charge pump input
voltage and VCO tuning
output voltage
VCC − 0.3 V
GVCO
VCO tuning input gain
(mean value)
defined at transmit output; note 2
defined at transmit output; note 3
−
−
70
−
−
MHz/V
MHz/V
GMOD
VCO modulation input
gain
2.4
Transmit preamplifier
Po(TXA)
Po(TXB)
,
transmit output power
Tamb = −10 to +60 °C; fVCO = 1880
to 1930 MHz; note 1
0
3
−
−
dBm
Ro(TXA)
Ro(TXB)
,
,
transmit output
balanced; expressed at high signal
level
−
200
Ω
resistance (real part of
the parallel output
impedance)
Co(TXA)
Co(TXB)
transmit output
capacitance (imaginary level
part of the parallel
balanced; expressed at high signal
−
−
0.3
−
pF
output impedance)
fVCO(feedthru) VCO frequency
feedthrough at
referred to Po(TXA), Po(TXB)
;
−20
−15
dBc
fVCO = 1900 MHz; note 1
transmit output
CNR25
carrier-to-noise ratio at
transmit output
carrier offset in closed loop;
∆f = 25 kHz
−
−
−
−65
−56
dBc/Hz
dBc/Hz
kHz
CNR4686
∆fo(push)
carrier-to-noise ratio at
transmit output
carrier offset; ∆f = 4686 kHz
−135
+10
−129
±20
frequency shift due to
supply voltage drop
measured dynamically;
VCC drop = 100 mV;
VCP/VCOtune = 1.2 V; VMOD = 0;
TX load = 50 Ω; note 1
∆fo(pull)
frequency shift due to
disabling the synthesizer after synthesizer disabled;
VCP/VCOtune set by the PLL on
frequency pulling measured 20 µs
−
−
+5
−6
±10
±12
kHz
kHz
fVCO = 1880.064 MHz; VMOD = 0;
TX load = 50 Ω; note 1
∆fo(drift)
transmit output
frequency drift during a
slot
notes 1 and 4
2001 Sep 06
12
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Receiver section
VRSSI(max)
maximum RSSI output
voltage
under high RX input signal level
−
1.9
−
V
VRSSI
RSSI output voltage
monotonicity over range
−96 to −36 dBm
P
i(RFA/B) = −33 dBm
Pi(RFA/B) = −36 dBm
i(RFA/B) = −96 dBm
−
−
−
−
1.7
1.64
0.3
25
2.0
−
V
V
P
−
V
ton
wake-up time from the
power-on signal to
correct RSSI output
40
µs
sB
input sensitivity
BER ≤ 10−3; note 1
BER ≤ 10−5; note 1
BER < 10−3; wanted signal at
−83 dBm; level of interference in
channels n + 2 and n + 4; note 1
−
−96
−92
42
−93
−76
−
dBm
dBm
dBc
−
IM
intermodulation
rejection
33
Rco
co-channel rejection
BER < 10−3; wanted channel at
−76 dBm; note 1
BER < 10−3; wanted channel at
−76 dBm; adjacent level referred to
wanted channel level; note 1
−10
−7.5
−
−
dBc
dBc
Ri(n−1)
adjacent channel
rejection
14
20
Ri(n−2)
bi-adjacent channel
rejection
BER < 10−3; wanted channel at
−76 dBm; bi-adjacent level referred
to wanted channel level; note 1
35
40
42
45
−
−
dBc
dBc
Ri(n−≥3)
rejection with
BER < 10−3; wanted channel at
≥3 channels separation −76 dBm; n ≥ 3 adjacent level
referred to wanted channel level;
note 1
RBl
rejection of a blocking
signal
BER < 10−3; wanted signal at
−83 dBm at channel 5:
f − fc > 6 MHz; note 2
38
48
55
58
−
−
dBc
dBc
(fRFmax + 5 MHz) < f < 2 GHz;
1780 MHz < f < (fRFmin − 5 MHz)
; note 1
2 GHz < f < 4.32 GHz;
notes 1 and 5
38
60
−
−
dBc
Ro(RF)
RF input resistance (real balanced; at 1890 MHz
part of the parallel input
−
100
Ω
impedance)
Co(RF)
RF input capacitance
(imaginary part of the
parallel input
balanced; at 1890 MHz
−
0.8
−
pF
impedance)
2001 Sep 06
13
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
1930
UNIT
fi(RF)(max)
maximum RF input
frequency
−
−
−
MHz
fi(RF)(min)
RLRF
minimum RF input
frequency
1880
11
−
−
MHz
dB
return loss on matched balanced; note 1
RF input
15
GDEM
VDEM
demodulator gain
mean value of fdev = ±288 kHz
−
−
1.6
1.3
−
−
V/MHz
V
DC level at demodulator fLO = fRF + 864 kHz
outputs RDATAP and
DATAM
Interface logic input and output pins S_DATA, S_CLK, S_EN, R_ON, VCO_ON, SLCCTR and RDATAP
VIH
VIL
HIGH-level input voltage note 6
LOW-level input voltage)
1.4
−0.3
−5
−
−
−
VCC
+0.4
+5
V
V
Ibias
input bias current
HIGH or LOW input levels
µA
V
VOH(RDATAP) HIGH-level output
voltage (pin RDATAP)
bit ‘SLIC’ = 1; IOH = 500 µA
bit ‘SLIC’ = 1; IOL = −500 µA
mode 2 or 3; VRON = HIGH level;
VCC − 0.4 VCC
−
VOL(RDATAP) LOW-level output
voltage (pin RDATAP)
−
0
0.4
−
V
IO(RON)
output drive current
(pin R_ON)
2.5
−
5
mA
kΩ
MHz
µs
VCC − VRON = 0.5 V
ZO(RON)
fSCLK(max)
tSEN(min)
output impedance
(pin R_ON)
mode 2 or 3; VRON = LOW level
6
−
maximum frequency
(pin S_CLK)
−
10
1
−
minimum pulse duration
(pin S_EN)
−
−
Notes
1. Measured and guaranteed only on the Philips evaluation board, including Printed-Circuit Board (PCB) and balun filter
with internal slicer.
2. Mean of the values of transmit frequency at VCP/VCOtune = 0.3 and 2.7 V.
3. Measured with VCP/VCOtune = 1.5 V, mean of the values of transmit frequency at VMOD = 0 and 0.5 V.
4. Frequency difference measured during 420 µs with VMOD = 0 (no modulation applied), at least 20 µs after disabling
the synthesizer.
5. Except for three occurrences, as defined in the DECT specification.
6. VIH should never exceed 3.6 V.
2001 Sep 06
14
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
MODE 1 TIMING
RECEIVE MODE
S_DATA
S_CLK
S_EN
EXTERNAL VCO_ON
EXTERNAL R_ON
EXTERNAL XTAL
TRANSMIT MODE
S_DATA
S_CLK
S_EN
EXTERNAL VCO_ON
EXTERNAL R_ON
EXTERNAL XTAL
TRANSMIT
PREAMPLIFIER
STATUS
SIGNAL ON OUTPUTS
TXA, TXB
FCA243
Fig.3 Normal mode timing diagram.
2001 Sep 06
15
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
MODE 2 TIMING
RECEIVE MODE
S_DATA
S_CLK
S_EN
INTERNAL VCO_ON
R_ON OUTPUT
EXTERNAL XTAL
TRANSMIT MODE
S_DATA
S_CLK
S_EN
INTERNAL VCO_ON
EXTERNAL XTAL
SIGNAL ON OUTPUTS
TXA, TXB
FCA244
Fig.4 Reduced signal mode timing diagram.
2001 Sep 06
16
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
MODE 3 TIMING
RECEIVE MODE
S_DATA
S_CLK
S_EN
EXTERNAL VCO_ON
R_ON OUTPUT
EXTERNAL XTAL
TRANSMIT MODE
S_DATA
S_CLK
S_EN
EXTERNAL VCO_ON
EXTERNAL XTAL
SIGNAL ON OUTPUTS
TXA, TXB
FCA245
Fig.5 Advanced signal mode timing diagram.
2001 Sep 06
17
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T_GFSK
C13
C66
100 nF
560 pF
NPO
C65
6.8 pF
C18
C67
6.8 pF
R11
2.2 kΩ
8.2 nF
NPO
V
32 31 30 29 28 27 26 25
CC
V
1
2
3
4
5
6
7
8
CC
VCO_ON
24
23
22
21
20
19
18
17
C68
8.2 pF
C62
1.8 pF
C23
100 nF
C69
8.2 pF
C70
8.2 pF
C58
10 µF
C57
C22
82 pF
L6
2.7 nH
L5
2.7 nH
100 nF
(2)
TXB
TXA
(1)
S_DATA
C31
1 nF
UAA3545
C28
8.2 pF
XTAL
C32
8.2 pF
S_EN
R_DATAP
S_CLK
C27
0.82 pF
L7
12 nH
C33
0.82 pF
L4
12 nH
9
10 11 12 13 14 15 16
RFB RFA
TX output
V
C40
4.7 nF
CC
L8
6.8 nH
C46
8.2 pF
ADDITIONAL
IMPLEMENTATION
SLCCTR
RSSI
R
470 Ω
PA
C41
8.2 pF
C40
8.2 pF
T_PWR
C44
27 pF
C
8.2 pF
C43
1.5 pF
C42
1.5 pF
L9
6.8 nH
L10
6.8 nH
C
8.2pF
R
470 Ω
RF input
FCA246
(1) S_DATA input (pin 4) is subject to latch-up if a negative voltage is applied. The application circuit should be designed to prevent this occurring.
(2) TXA and TXB outputs (pins 20 and 21) are subject to latch-up if a negative output voltage occurs. To prevent this happening, the application circuit should use a DC biasing arrangement
with L5 and L6 connected to VCC as shown.
Fig.6 Evaluation board schematic (mode 3 operation).
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
Internal pin configuration
PIN
SYMBOL
VCO_ON
INTERNAL CIRCUIT
1
4
S_DATA
S_EN
6
1, 4, 6, 8, 11
8
S_CLK
SLCCTR
MGW234
11
7
9
RDATAP
DATAM
7, 9
MGW235
12
RSSI
12
MGW237
14
15
RFB
RFA
14
15
MGW238
17
R_ON
17
MGW239
2001 Sep 06
19
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
PIN
SYMBOL
TXA
INTERNAL CIRCUIT
20
21
TXB
20
21
MGW240
25
31
VMOD
25
MGW241
VREGO
31
MGW242
32
CP/VCOtune
32
MGW243
2001 Sep 06
20
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
RECEIVED SIGNAL STRENGTH INTENSITY
MGW233
2
V
RSSI
(V)
1.6
1.2
0.8
0.4
0
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
P
(dBm)
i(RFA/B)
Fig.7 RSSI output as a function of input power at pins RFA and RFB.
2001 Sep 06
21
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
PACKAGE OUTLINE
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
c
y
X
A
E
17
24
Z
16
25
E
e
A
H
2
E
A
(A )
3
A
1
w M
p
θ
pin 1 index
b
L
p
32
9
L
1
8
detail X
Z
v M
D
A
e
w M
b
p
D
B
H
v
M
B
D
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
E
θ
1
2
3
p
E
p
D
max.
7o
0o
0.15 1.5
0.05 1.3
0.27 0.18 5.1
0.17 0.12 4.9
5.1
4.9
7.15 7.15
6.85 6.85
0.75
0.45
0.95 0.95
0.55 0.55
mm
1.60
0.25
0.5
1.0
0.2 0.12 0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
99-12-27
00-01-19
SOT401-1
136E01
MS-026
2001 Sep 06
22
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2001 Sep 06
23
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
not suitable
REFLOW(1)
BGA, HBGA, LFBGA, SQFP, TFBGA
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS
PLCC(3), SO, SOJ
suitable
not suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2001 Sep 06
24
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective specification
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary specification Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product specification
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Sep 06
25
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
NOTES
2001 Sep 06
26
Philips Semiconductors
Product specification
Fully integrated DECT transceiver
UAA3545
NOTES
2001 Sep 06
27
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/01/pp28
Date of release: 2001 Sep 06
Document order number: 9397 750 08151
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