AFGHL25T120RLD [ONSEMI]
IGBT - Automotive Grade 1200 V 25 A;
| 型号： | AFGHL25T120RLD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - Automotive Grade 1200 V 25 A 双极性晶体管 |
| 文件： | 总12页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT for Automotive
Application
1200 V, 25 A
AFGHL25T120RLD
Description
www.onsemi.com
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction. Provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss, which is AEC Q101
qualified offer the optimum performance for both hard and soft
switching topology in automotive application.
V
I
C
V
CE(Sat)
CES
1200 V
25 A
1.73 V (Typ.)
C
Features
• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature: T = 175°C
J
G
• Short Circuit Withstand Time 9 ms
• 100% of the Parts Tested for I (Note 2)
LM
E
• Fast Switching
• Tighten Parameter Distribution
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
G
C
Typical Applications
E
TO−247−3L
CASE 340CX
• Automotive HEV−EV E−Compressor
• Automotive HEV−EV PTC Heater
• Automotive HEV−EV PTC Onboard Chargers
• Automotive HEV−EV DC−DC Converters
MARKING DIAGRAM
AFG25T
120RLD
$Y&Z&3&K
AFG25T120RLD
= Specific Device Code
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
$Y
&Z
&3
&K
= 2−Digit Lot Traceability Code
ORDERING INFORMATION
Shipping
Device
Package
AFGHL25T120RLD TO−247−3L 30 Units / Rail
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2021 − Rev. 0
AFGHL25T120RLD/D
AFGHL25T120RLD
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Value
1200
20
Units
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
V
V
Transient Gate to Emitter Voltage
30
Collector Current @ T = 25°C (Note 1)
I
C
48
A
C
Collector Current @ T = 100°C
25
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
100
100
48
A
A
A
LM
I
CM
Diode Forward Current @ T = 25°C (Note 1)
I
F
C
Diode Forward Current @ T = 100°C
25
C
Pulsed Diode Maximum Forward Current
I
100
400
200
9
A
FM
Maximum Power Dissipation @ T = 25°C
P
W
C
D
Maximum Power Dissipation @ T = 100°C
C
Short Circuit Withstand Time
SCWT
ms
V
GE
= 15 V, V = 600 V, T = 150°C
CE C
Operating Junction Temperature / Storage Temperature Range
T
T
−55 to +175
°C
°C
J, STG
Maximum Lead Temp. For Soldering Purposes, ⅛” from case for 5 seconds
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Value limited by bond wire.
2. V = 600 V, V = 15 V, I = 100 A, R = 15 W, Inductive Load, 100% Tested
CC
GE
C
G
3. Repetitive rating: pulse width limited by max. Junction temperature.
THERMAL CHARACTERISTICS
Rating
Symbol
Max.
0.37
0.63
40
Units
_C/W
_C/W
_C/W
Thermal Resistance, Junction to Case, for IGBT
Thermal Resistance, Junction to Case, Max for Diode
Thermal Resistance, Junction to Ambient, Max
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
GE
V
GE
V
GE
V
GE
= 0 V, I = 1mA
BVCES
1250
−
1.3
−
−
V
V/_C
mA
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1mA
DBV
/
−
−
−
−
C
CES
DT
J
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
= 0 V, V = V
ICES
IGES
40
400
CE
CES
Gate Leakage Current,
Collector−emitter Short−circuited
= V
, V = 0 V
CE
−
nA
GES
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 25 mA
VGE(th)
5.1
6.1
7.1
V
V
GE
CE
C
V
GE
V
GE
= 15 V, I = 25 A
VCE(sat)
−
−
1.73
2.09
2.0
−
C
= 15 V, I = 25 A, T = 175_C
C
C
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2
AFGHL25T120RLD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DYNAMIC CHARACTERISTICS
Input Capacitance
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
V
CE
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
6174
212
114
−
−
−
pF
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T
= 25_C
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
25.6
9.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
CC
d(on)
V
= 600 V, I = 12.5 A
C
t
r
Rg = 5 W
= 15 V
V
GE
Turn−off Delay Time
Fall Time
t
126.0
86.0
0.90
0.31
1.22
27.2
16.0
116.0
89.0
1.94
0.73
2.67
24.0
12.0
144.0
242.0
1.42
0.84
2.26
28.0
16.0
131.0
213.0
2.87
1.7
d(off)
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T
= 25_C
t
t
C
d(on)
V
= 600 V, I = 25 A
C
CC
t
r
Rg = 5 W
= 15 V
V
GE
Turn−off Delay Time
Fall Time
d(off)
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T
= 175_C
t
t
C
d(on)
V
= 600 V, I = 12.5 A
C
CC
t
r
Rg = 5 W
= 15 V
V
GE
Turn−off Delay Time
Fall Time
d(off)
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T
= 175_C
t
t
C
d(on)
V
= 600 V, I = 25 A
C
CC
t
r
Rg = 5 W
= 15 V
V
GE
Turn−off Delay Time
Fall Time
d(off)
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to collector Charge
DIODE CHARACTERISTICS
Forward Voltage
E
on
E
off
mJ
nC
E
ts
4.54
277
V
= 600 V, I = 25 A, V = 15 V
Q
g
CE
C
GE
Q
53
ge
gc
Q
146
I = 25 A, T = 25_C
V
F
−
−
1.43
1.44
2.0
−
V
F
C
C
I = 25 A, T = 175_C
F
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
T
= 25_C
E
−
−
−
0.46
112
−
−
−
mJ
ns
C
rec
V
= 600 V, I = 12.5 A,
F
R
F
T
rr
dI /dt = 1000 A/ms
Q
1538
nC
rr
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3
AFGHL25T120RLD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DIODE CHARACTERISTICS
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
T
= 25_C
E
rec
−
−
−
−
−
−
−
−
−
0.75
159
−
−
−
−
−
−
−
−
−
mJ
ns
C
R
F
V
= 600 V, I = 25 A,
F
dI /dt = 1000 A/ms
T
rr
Q
2429
1.13
185
nC
mJ
ns
rr
T
= 175_C
E
rec
C
V
= 600 V, I = 12.5 A,
F
R
F
T
rr
dI /dt = 1000 A/ms
Q
3241
1.48
214
nC
mJ
ns
rr
T
= 175_C
E
rec
C
V
= 600 V, I = 25 A,
F
R
F
T
rr
dI /dt = 1000 A/ms
Q
4233
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
AFGHL25T120RLD
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
100
V
GE
= 20 V
15 V
12 V
10 V
8 V
V
GE
= 20 V
15 V
12 V
10 V
8 V
90
80
70
60
50
40
30
20
10
0
7 V
7 V
0
1
2
3
4
5
0
2
4
6
8
V
CE
, Drain−Source Voltage (V)
V
CE
, Drain−Source Voltage (V)
Figure 2. Typical Output Characteristics (1755C)
Figure 1. Typical Output Characteristics (255C)
100
80
60
40
20
0
3,5
3
Common Emitter
12.5 A
25 A
V
= 15 V
GE
T = 25°C
50 A
J
T = 175°C
J
2,5
2
1,5
1
−100
−50
0
50
100
150
200
0
1
2
3
4
5
T , Case Temperature (°C)
J
V
CE
, Collector−Emitter Voltage (V)
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 3. Typical Saturation Voltage
Characteristics
20
18
20
18
16
14
12
10
8
12.5 A
25 A
50 A
12.5 A
25 A
16
50 A
14
12
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
0
5
10
15
20
V
GE
, Gate−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 6. Saturation Voltage vs. VGE (1755C)
Figure 5. Saturation Voltage vs. VGE (255C)
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5
AFGHL25T120RLD
TYPICAL CHARACTERISTICS (continued)
16,00
C
ies
5000
500
50
V
= 400 V
CC
f = 1 MHz
GS
13,00
10,00
7,00
V
= 0 V
500 V
600 V
C
oes
Common Emitter
= 0 V, f = 1 MHz
J
4,00
C
V
res
GE
T = 25°C
1,00
0,1
10
, Drain to Source Voltage (V)
100
0
50
100
Q
150
200
250
300
Gate Charge (nC)
V
DS
g,
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
10000
1000
t
25°C
t 25°C
d(on),
f,
t
t
t , 25°C
, 25°C
r
d(off)
d(off)
f,
t
, 175°C
, 175°C
d(on)
t 175°C
r,
t 175°C
100
10
3
13
23
33
43
53
1
11
21
31
41
51
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−on Characteristics vs. Gate
Figure 10. Turn−off Characteristics vs. Gate
Resistance
Resistance
100
10
1
200
t 25°C
r,
t 25°C
f,
t , 175°C
r
t , 175°C
f
t
t
t
t
, 25°C
d(on)
d(on),
, 25°C
d(off)
d(off),
175°C
175°C
20
5
15
25
35
45
2
22
42
62
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 11. Turn−on Characteristics vs. Collector
Figure 12. Turn−off Characteristics vs. Collector
Current
Current
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6
AFGHL25T120RLD
TYPICAL CHARACTERISTICS (continued)
6
5
4
3
2
1
0
5
E
E
E
E
, 25°C
on
on
E
E
E
E
, 25°C
175°C
on
, 175°C
on,
off,
off,
4
3
2
1
0
25°C
175°C
off,
off,
25°C
175°C
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 14. Switching Loss vs. Collector Current
Figure 13. Switching Loss vs. Gate Resistance
1000
100
100
10
1
10 ms
100 ms
10
1 ms
1
DC
10 ms
0,1
0,01
0,001
0,0001
0,00001
0,000001
0,0000001
*Note:
25°C
175°C
75°C
1. T = 25°C
C
0
2. T = 175°C
J
3. Single Pulse
0
0
0,5
1
1,5
2
2,5
3
1
10
100
1000
10000
V , Forward Voltage (V)
F
V
CE
, Collector−Emitter Voltage (V)
Figure 16. Forward Characteristics
Figure 15. SOA Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
di/dt = 500 A/ms_25°C
di/dt = 500 A/ms_25°C
di/dt = 1000 A/ms_25°C
di/dt = 500 A/ms_175°C
di/dt = 1000 A/ms_175°C
610
di/dt = 1000 A/ms_25°C
di/dt = 500 A/ms_175°C
di/dt = 1000 A/ms_175°C
560
510
460
410
360
310
260
210
160
110
60
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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AFGHL25T120RLD
TYPICAL CHARACTERISTICS (continued)
1
0.5
0.2
0,1
P
DM
t
1
0.1
t
2
Duty Factor, D = t /t
1
2
0.05
Peak T = Pdm x Zqjc + T
j
C
0.02
0.01
R
R
2
1
0,01
Single
i:
ri[K/W]: 0.005006 0.08503
τ[s]: 1.774E-5 1.574E-4 3.816E-3 1.834E-2
1
2
3
4
0.126
0.06879
0,001
1
0,00001
0,0001
0,001
0,01
0,1
t, Rectangular Pulse Duration
Figure 19. Transient Thermal Impedance of IGBT
1
0,1
P
DM
t
1
t
2
Duty Factor, D = t /t
1
2
Peak T = Pdm x Zqjc + T
j
C
R
R
1
2
0,01
0,001
i:
ri[K/W]: 0.01514
τ[s]: 1.423E-5 1.386E-4 3.266E-3 2.9827E-2
1
2
3
4
0.09299 0.2178 0.1337
0,00001
0,0001
0,001
0,01
0,1
1
t, Rectangular Pulse Duration
Figure 20. Transient Thermal Impedance of Diode
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8
AFGHL25T120RLD
Figure 21. Test Circuit for Switching Characteristics
Figure 22. Definition of Turn On Waveform
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9
AFGHL25T120RLD
Figure 23. Definition of Turn Off Waveform
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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