BC848AWT1G [ONSEMI]
General Purpose Transistor NPN;
| 型号： | BC848AWT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistor NPN 放大器 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
www.onsemi.com
COLLECTOR
3
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
V
3
SC−70/SOT−323
BC846
BC847
BC848
65
45
30
CASE 419
STYLE 3
1
2
Collector-Base Voltage
Emitter-Base Voltage
V
V
BC846
BC847
BC848
80
50
30
MARKING DIAGRAM
BC846
BC847
BC848
6.0
6.0
5.0
XX MG
G
Collector Current − Continuous
I
C
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
XX
M
G
= Specific Device Code
= Month Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(Note: Microdot may be in either location)
Total Device Dissipation FR−5 Board,
(Note 1) T = 25°C
P
D
200
mW
A
Thermal Resistance,
Junction−to−Ambient
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
R
620
°C/W
°C
q
JA
Junction and Storage Temperature
T , T
J
−55 to
+150
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 12
BC846AWT1/D
BC846, BC847, BC848
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 10 mA)
C
BC846 Series
BC847 Series
BC848 Series
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
Collector−Emitter Breakdown Voltage
BC846 Series
BC847 Series
BC848 Series
V
80
50
30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = 10 mA)
C
BC846 Series
BC847 Series
BC848 Series
V
V
80
50
30
−
−
−
−
−
−
Emitter−Base Breakdown Voltage
(I = 1.0 mA)
E
BC846 Series
BC847 Series
BC848 Series
6.0
6.0
5.0
−
−
−
−
−
−
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
−
−
−
90
150
270
−
−
−
−
(I = 10 mA, V = 5.0 V)
C
CE
(I = 2.0 mA, V = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
110
200
420
180
290
520
220
450
800
C
CE
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Base−Emitter Voltage (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
100
−
−
MHz
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
−
−
−
−
4.5
10
pF
dB
CB
obo
Noise Figure (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
C
CE
S
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2
BC846, BC847, BC848
BC846A, BC847A, BC848A
300
200
300
150°C
V = 5 V
CE
V
CE
= 1 V
150°C
200
25°C
25°C
−55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
0.18
I /I = 20
C
B
150°C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
25°C
−55°C
0.02
0
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
−55°C
25°C
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
I /I = 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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3
BC846, BC847, BC848
BC846A, BC847A, BC848A
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 6. Collector Saturation Region
Figure 7. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 8. Capacitances
Figure 9. Current−Gain − Bandwidth Product
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4
BC846, BC847, BC848
BC846B
600
500
400
600
V
CE
= 1 V
V
CE
= 5 V
150°C
25°C
150°C
500
400
25°C
300
200
300
−55°C
200
−55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
0.30
I /I = 20
C
B
150°C
0.25
0.20
0.15
25°C
0.10
0.05
0
−55°C
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
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5
BC846, BC847, BC848
BC846B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
A
1.4
100 mA
200 mA
20 mA
50 mA
1.8
q
for V
BE
VB
-55°C to 125°C
I =
10 mA
C
2.2
2.6
3.0
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 15. Collector Saturation Region
Figure 16. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
500
T = 25°C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 17. Capacitance
Figure 18. Current−Gain − Bandwidth Product
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6
BC846, BC847, BC848
BC847B, BC848B
600
500
400
300
200
600
V
CE
= 1 V
V
CE
= 5 V
150°C
25°C
150°C
500
400
300
25°C
−55°C
200 −55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 19. DC Current Gain vs. Collector
Current
Figure 20. DC Current Gain vs. Collector
Current
0.30
I /I = 20
C
B
0.25
0.20
0.15
0.10
150°C
25°C
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
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7
BC846, BC847, BC848
BC847B, BC848B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 24. Collector Saturation Region
Figure 25. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 26. Capacitances
Figure 27. Current−Gain − Bandwidth Product
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8
BC846, BC847, BC848
BC847C, BC848C
1000
900
1000
150°C
V
CE
= 1 V
900
800
700
600
500
400
300
200
V
CE
= 5 V
150°C
800
700
600
500
400
300
200
25°C
25°C
−55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 28. DC Current Gain vs. Collector
Current
Figure 29. DC Current Gain vs. Collector
Current
0.30
I /I = 20
C
B
0.25
0.20
0.15
0.10
150°C
25°C
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
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9
BC846, BC847, BC848
BC847C, BC848C
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 33. Collector Saturation Region
Figure 34. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 35. Capacitances
Figure 36. Current−Gain − Bandwidth Product
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BC846, BC847, BC848
1
1
100 mS 10 mS
1 S
100 mS 10 mS
1 S
1 mS
1 mS
0.1
0.1
Thermal Limit
Thermal Limit
0.01
0.01
0.001
0.001
1
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1
1
10
100
V
CE
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for
BC846A, BC846B
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C
1
100 mS 10 mS
1 mS
0.1
1 S
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C
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11
BC846, BC847, BC848
DEVICE ORDERING AND SPECIFIC MARKING INFORMATION
†
Device
BC846BWT1G
Specific Marking Code
Package
Shipping
1B
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
SBC846BWT1G*
BC847AWT1G
1E
1F
1G
1G
SBC847AWT1G*
BC847BWT1G
SBC847BWT1G*
BC847CWT1G
SBC847CWT1G*
BC847CWT3G
SBC847CWT3G*
BC848BWT1G
NSVBC848BWT1G*
BC848CWT1G
SC−70 (SOT−323)
(Pb−Free)
1K
1L
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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12
BC846, BC847, BC848
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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BC846AWT1/D
相关型号：
BC848B
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
INFINEON
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