BUV22 [ONSEMI]
SITCHMODE Series NPN Silicon Power Transistor; SITCHMODE系列NPN硅功率晶体管
| 型号： | BUV22 |
| 厂家： | 
ONSEMI |
| 描述： | SITCHMODE Series NPN Silicon Power Transistor |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
40 AMPERES
NPN SILICON
POWER
. . . designed for high current, high speed, high power applications.
METAL TRANSISTOR
250 VOLTS
•
•
•
High DC current gain: HFE min. = 20 at I = 10 A
C
Low V
: V
max. = 1.0 V at I = 10 A
250 WATTS
CE(sat) CE(sat)
C
Very fast switching times:
T
max. = 0.35 µs at I = 20 A
F
C
CASE 197A–05
TO–204AE
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
250
300
7
CEO(sus)
V
CBO
V
EBO
Collector–Emitter Voltage (V
= –1.5 V)
V
300
290
BE
CEX
CER
Collector–Emitter Voltage (R
BE
= 100 Ω)
V
Collector–Current — Continuous
— Peak (pw
I
40
50
Adc
Apk
C
10 ms)
I
CM
Base–Current continuous
I
8
Adc
Watts
C
B
Total Power Dissipation @ T = 25 C
C
P
250
D
Operating and Storage Junction Temperature Range
T , T
–65 to 200
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
0.7
C/W
JC
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
200
T
, TEMPERATURE (°C)
C
Figure 1. Power Derating
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
1
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 200 mA, I = 0, L = 25 mH)
V
250
Vdc
CEO(sus)
C
B
Collector Cutoff Current at Reverse Bias
I
mAdc
CEX
(V
CE
(V
CE
= 300 V, V
= 300 V, V
= –1.5 V)
= –1.5 V, T = 125 C)
3.0
12.0
BE
BE
C
Collector–Emitter Cutoff Current
(V = 200 V)
I
3.0
mAdc
V
CEO
CE
Emitter–Base Reverse Voltage
V
7
EBO
(I = 50 mA)
E
Emitter–Cutoff Current
I
1.0
mAdc
EBO
(V
EB
= 5 V)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
I
Adc
S/b
(V
CE
(V
CE
= 20 V, t = 1 s)
= 140 V, t = 1 s)
12
0.15
1
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 10 A, V
= 4 V)
= 4 V)
20
10
60
C
CE
CE
(I = 20 A, V
C
Collector–Emitter Saturation Voltage
(I = 10 A, I = 1 A)
V
Vdc
Vdc
CE(sat)
1.0
1.5
C
B
(I = 20 A, I = 2.5 A)
C
B
Base–Emitter Saturation Voltage
(I = 40 A, I = 4 A)
V
1.5
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
f
T
8.0
MHz
(V
CE
= 15 V, I = 2 A, f = 4 MHz)
C
SWITCHING CHARACTERISTICS (Resistive Load)
Turn–on Time
t
0.8
2.0
µs
on
(I = 20 A, I = I = 2.5 A,
C
B1 B2
Storage Time
Fall Time
t
s
V
CC
= 100 V, R = 5 Ω)
C
t
f
0.35
1
Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
2
Motorola Bipolar Power Transistor Device Data
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
40
10
down. Safe operating area curves indicate I – V
limits of
C
CE
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1
The data of Figure 2 is based on T = 25 C; T
is
J(pk)
C
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
0.1
1
10
100
250
V
, COLLECTOR–EMITTER VOLTAGE (V)
CE
Figure 2. Active Region Safe Operating Area
2.0
1.6
1.2
0.8
0.4
50
45
I
/I = 8
C B
40
35
30
25
V
= 5 V
CE
V
BE
V
20
15
10
5
CE
0
0
1
10
0.1
1
10
I , COLLECTOR CURRENT (A)
C
100
I
, COLLECTOR CURRENT (A)
C
Figure 3. “On” Voltages
Figure 4. DC Current Gain
V
CC
3.0
2.0
4
10
µF
R
C
1.0
t
S
I
B2
V
R
= 100 V
= 5 Ω
= 2.7 Ω
CC
C
R
B
R
B
I
0.4
0.3
B1
t
on
I
= I
/I = 8
0.2
B1
B2
I
t
C B
F
R
– R : Non inductive resistances
B
C
4
8
12
16
20
24
I
, COLLECTOR CURRENT (A)
C
Figure 6. Switching Times Test Circuit
Figure 5. Resistive Switching Performance
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
C
NOTES:
SEATING
PLANE
–T–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
E
2. CONTROLLING DIMENSION: INCH.
K
D 2 PL
0.30 (0.012)
INCHES
MIN MAX
1.530 REF
MILLIMETERS
MIN
38.86 REF
25.15
6.35
1.45
1.53
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MAX
U
0.990
1.050
0.335
0.063
0.070
26.67
8.51
1.60
1.77
–Y–
L
V
H
0.250
0.057
0.060
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
B
G
N
Q
U
V
0.760
0.830
0.165
19.31
21.08
4.19
–Q–
0.151
0.131
3.84
3.33
M
M
0.25 (0.010)
T Y
1.187 BSC
30.15 BSC
0.188
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
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