CPH5901G [ONSEMI]
TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,10MA I(DSS),SOT-25;
| 型号： | CPH5901G |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,10MA I(DSS),SOT-25 |
| 文件： | 总6页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8278A
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
High-Frequency Amplifier. AM Amplifier.
Low-Frequency Amplifier Applications
CPH5901
Features
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly.
•
•
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one
package.
Common drain and emitter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
V
15
--15
10
V
V
DSX
V
GDS
I
G
mA
mA
mW
Drain Current
I
50
D
Allowable Power Dissipation
[TR]
P
Mounted on a ceramic board (600mm2✕0.8mm)
350
D
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
V
55
50
V
V
CBO
CEO
EBO
6
V
I
150
300
30
mA
mA
mA
mW
C
Collector Current (Pulse)
Base Current
I
CP
I
B
Collector Dissipation
[Common Ratings]
Total Dissipation
P
Mounted on a ceramic board (600mm2✕0.8mm)
Mounted on a ceramic board (600mm2✕0.8mm)
350
C
P
500
150
mW
°C
T
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
°C
Marking : 1A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
No.8278-1/6
62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705
CPH5901
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
V
I
=--10µA, V =0V
--15
V
nA
V
(BR)GDS
G DS
I
V
V
V
V
V
V
V
=--10V, V =0V
DS
--1.0
GSS
(off)
GS
DS
DS
DS
DS
DS
DS
Cutoff Voltage
V
=5V, I =100µA
--0.2
6.0*
25
--0.6
--1.4
GS
D
Drain Current
I
=5V, V =0V
GS
20.0*
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
=5V, V =0V, f=1kHz
GS
50
10
Ciss
Crss
NF
=5V, V =0V, f=1MHz
GS
Reverse Transfer Capacitance
Noise Figure
=5V, V =0V, f=1MHz
GS
3.0
1.5
=5V, Rg=1kΩ, I =1mA, f=1kHz
D
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
V
V
=35V, I =0A
0.1
0.1
µA
µA
CBO
CB
E
I
=4V, I =0A
C
EBO
EB
CE
CE
CB
h
FE
=6V, I =1mA
135
400
C
Gain-Bandwidth Product
Output Capacitance
f
=6V, I =10mA
C
200
1.7
MHz
pF
V
T
Cob
=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
(sat)
I
C
I
C
I
C
I
C
=50mA, I =5mA
0.08
0.8
0.4
1.0
CE
B
(sat)
=50mA, I =5mA
V
BE
B
V
V
V
=10µA, I =0A
55
50
6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=1mA, R =∞
BE
V
I =10µA, I =0A
E
V
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
0.15
0.75
0.20
µs
µs
µs
on
Storage Time
t
stg
Fall Time
t
f
* : The CPH5901 is classified by I
DSS
as follows : (unit : mA)
Rank
F
G
I
6.0 to 12.0
10.0 to 20.0
DSS
Package Dimensions
Electrical Connection
unit : mm
7017-007
5
4
3
1 : Collector
2 : Gate
3 : Source
4 : Emitter / Drain
5 : Base
0.4
0.15
0.05
5
4
3
2
1
2
Top view
1
0.95
2.9
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Switching Time Test Circuit
I
I
B1
B2
PW=20µs
D.C.≤1%
OUTPUT
INPUT
R
B
R
L
V
R
50Ω
+
+
220µF
470µF
V
= --5V
V
=20V
CC
BE
10I = --10I = I =10mA
B1 B2
C
No.8278-2/6
CPH5901
I
-- V
[FET]
I
-- V
[FET]
D
DS
D
DS
16
14
12
10
20
16
12
8
6
4
8
--0.2V
--0.3V
--0.3V
4
0
2
0
--0.4V
--0.6V --0.5V
--0.4V
--0.6V --0.5V
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V
-- V ITR10329
[FET]
ITR10330
DS
DS
I
-- V
V
(off) -- I
[FET]
D
GS
GS
DSS
2
40
30
20
V
=5V
V
=5V
DS
DS
I =100µA
D
--1.0
7
5
3
2
10
0
--0.1
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
3
3
5
5
7
2
3
5
10
Gate-to-Source Voltage, V
-- V
Drain Current, I -- mA
ITR10331
ITR10332
GS
DSS
yfs -- I
D
[FET]
[FET]
yfs -- I
DSS
100
100
V
V
=5V
V
=5V
DS
DS
=0V
7
5
f=1kHz
GS
7
f=1kHz
5
3
2
3
2
10
7
5
3
10
2
3
5
7
2
3
5
5
7
2
3
5
1.0
10
10
Drain Current, I
-- mA
Drain Current, I -- mA
ITR10333
ITR10334
DSS
D
Ciss -- V
[FET]
=0V
Crss -- V
[FET]
=0V
DS
DS
3
2
10
V
V
GS
GS
f=1MHz
f=1MHz
7
5
10
3
2
7
5
3
2
1.0
7
5
1.0
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
1.0
10
Drain-to-Source Voltage, V
-- V
ITR10335
Drain-to-Source Voltage, V
-- V ITR10336
DS
DS
No.8278-3/6
CPH5901
NF -- f
NF -- f
[FET]
[FET]
=5V
Rg=1kΩ
14
12
10
8
14
12
10
8
V
=5V
V
DS
I =10mA
DS
D
6
6
4
4
2
0
2
0
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
Frequency, f -- Hz
ITR10337
Frequency, f -- Hz
ITR10338
P
-- Ta
[FET]
D
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT09862
I
-- V
[TR]
I
-- V
C CE
[TR]
C
CE
50
40
30
20
12
10
8
45µA
40µA
35µA
30µA
6
25µA
20µA
15µA
µA
100
4
50µA
10
0
10µA
5µA
2
0
I =0µA
I =0µA
B
0.8
B
0
0.2
0.4
0.6
1.0
0
10
20
30
40
50
Collector-to-Emitter Voltage, V
-- V ITR10340
[TR]
Collector-to-Emitter Voltage, V
-- V ITR10341
CE
CE
I
-- V
h
FE
-- I
C
[TR]
=6V
C
BE
2
160
140
120
100
80
V
V
=6V
CE
CE
1000
7
5
Ta=75
°C
3
2
--25°
C
60
40
100
7
20
0
5
3
2
3
5
2
3
5
2
3
5
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10
100
ITR10343
Base-to-Emitter Voltage, V
BE
-- V ITR10342
Collector Current, I -- mA
C
No.8278-4/6
CPH5901
f
-- I
[TR]
=6V
C
ib
-- V
[TR]
T
C
EB
7
5
5
V
f=1MHz
CE
3
2
3
2
10
7
5
100
7
5
3
2
3
2
1.0
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
1.0
10
100
1.0
10
Emitter-to-Base Voltage, V
-- V
Collector Current, I -- mA
ITR10344
ITR10345
EB
Cob -- V C
CB
[TR]
V
(sat) -- I
[TR]
CE
C
3
2
3
2
f=1MHz
I
/ I =10
B
C
1.0
10
7
5
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
Collector-to-Base Voltage, V
-- V
ITR10346
Collector Current, I -- mA
ITR10347
CB
C
P
-- Ta
V
(sat) -- I
[TR]
[TR]
C
BE
C
400
10
I
/ I =10
B
C
7
5
350
300
250
200
150
100
3
2
1.0
7
5
50
0
3
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
Collector Current, I -- mA
ITR10348
Ambient Temperature, Ta -- °C
IT09863
C
No.8278-5/6
CPH5901
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.8278-6/6
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