CPH5901G-TL-E [SANYO]
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications; 高频放大器。 AM放大器。低频放大器的应用
| 型号： | CPH5901G-TL-E |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications |
| 文件： | 总8页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8278B
SANYO Sem iconductors
DATA S HEET
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
CPH5901
High-Frequency Amplifier. AM Amplifier.
Low-Frequency Amplifier Applications
Features
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly
•
•
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package
Common drain and emitter
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
V
15
--15
10
V
V
DSX
V
GDS
I
G
mA
mA
mW
Drain Current
I
D
50
Allowable Power Dissipation
[TR]
P
Mounted on a ceramic board (600mm2 0.8mm)
350
×
D
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
55
50
V
V
CBO
V
CEO
V
EBO
6
V
I
C
150
300
30
mA
mA
mA
mW
Collector Current (Pulse)
Base Current
I
CP
I
B
Collector Dissipation
[TR]
P
Mounted on a ceramic board (600mm2 0.8mm)
350
×
C
Total Power Dissipation
Junction Temperature
Storage Temperature
P
Mounted on a ceramic board (600mm2 0.8mm)
500
150
mW
×
T
Tj
C
C
°
°
Tstg
--55 to +150
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH5
7017A-007
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
CPH5901F-TL-E
CPH5901G-TL-E
0.15
2.9
Packing Type : TL
Marking
5
4
3
2
0.05
TL
1
1 : Collector
2 : Gate
0.95
0.4
Electrical Connection
3 : Source
4 : Emitter/Drain
5 : Base
5
4
3
SANYO : CPH5
1
2
http://semicon.sanyo.com/en/network
60612 TKIM/62005AC MSIM TB-00001557/32505AC TSIM TA-3705
No.8278-1/8
CPH5901
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
V
I
=--10 A, V =0V
--15
V
nA
V
μ
(BR)GDS
G
GS
I
V
=--10V, V =0V
--1.0
GSS
(off)
GS
DS
=5V, I =100
V
V
A
μ
--0.2
6.0*
25
--0.6
--1.4
GS
DS
D
Drain Current
I
V
=5V, V =0V
DS GS
20.0*
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
V
=5V, V =0V, f=1kHz
GS
50
10
|
|
DS
Ciss
Crss
NF
V
=5V, V =0V, f=1kHz
GS
DS
V
=5V, V =0V, f=1kHzz
GS
3.0
1.5
DS
V
=5V, Rg=1k , I =1mA, f=1kHz
Ω
D
DS
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=35V, I =0A
0.1
0.1
A
A
μ
CBO
CB
V =4V, I =0A
EB
E
I
μ
EBO
C
h
V
CE
=6V, I =1mA
135
400
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=6V, I =10mA
200
1.7
MHz
pF
mV
V
T
CE C
Cob
V
CB
=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=50mA, I =5mA
0.08
0.8
0.4
CE
B
V
I
C
=50mA, I =5mA
1.0
BE
B
V
I
C
=10 A, I =0A
55
50
6
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
0.15
0.75
0.20
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
: The CPH5901 is classified by I
as follows : (unit : mA)
*
DSS
Rank
F
G
I
6.0 to 12.0
10.0 to 20.0
DSS
Switching Time Test Circuit
I
I
B1
PW=20μs
D.C.≤1%
B2
OUTPUT
INPUT
R
B
R
L
V
R
50Ω
+
+
220μF
470μF
V
= --5V
V
=20V
CC
BE
10I = --10I = I =10mA
B1 B2
C
Ordering Information
Device
CPH5901F-TL-E
CPH5901G-TL-E
Package
CPH5
Shipping
memo
3,000pcs./reel
3,000pcs./reel
Pb Free
CPH5
No.8278-2/8
CPH5901
I
D
-- V
[FET]
I
D
-- V
[FET]
DS
DS
16
14
12
10
20
16
12
8
6
4
8
--0.2V
--0.3V
--0.3V
4
0
2
0
--0.4V
--0.6V --0.5V
--0.4V
--0.6V --0.5V
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V
DS
-- V ITR10329
[FET]
ITR10330
DS
I
D
-- V
V
(off) -- I
[FET]
GS
GS
DSS
2
40
30
20
V
=5V
V
=5V
DS
DS
I =100μA
D
--1.0
7
5
3
2
10
0
--0.1
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
3
3
5
5
7
2
3
5
10
Gate-to-Source Voltage, V
-- V
Drain Current, I -- mA
ITR10331
ITR10332
GS
DSS
| yfs | -- I
[FET]
[FET]
| yfs | -- I
D
DSS
100
100
V
V
=5V
=0V
V
=5V
DS
GS
DS
7
5
f=1kHz
7
f=1kHz
5
3
2
3
2
10
7
5
3
10
2
3
5
7
2
3
5
5
7
2
3
5
1.0
10
10
Drain Current, I
-- mA
Drain Current, I -- mA
ITR10333
ITR10334
DSS
D
Ciss -- V
[FET]
=0V
Crss -- V
DS
[FET]
=0V
DS
10
3
2
V
V
GS
GS
f=1MHz
f=1MHz
7
5
10
3
2
7
5
3
2
1.0
7
5
1.0
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
1.0
10
Drain-to-Source Voltage, V
-- V
ITR10335
Drain-to-Source Voltage, V -- V ITR10336
DS
DS
No.8278-3/8
CPH5901
NF -- f
NF -- f
[FET]
=5V
I =10mA
[FET]
=5V
Rg=1kΩ
14
12
10
8
14
12
10
8
V
V
DS
DS
D
6
6
4
4
2
0
2
0
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
Frequency, f -- Hz
ITR10337
Frequency, f -- Hz
ITR10338
P
-- Ta
[FET]
D
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT09862
I
C
-- V
[TR]
I -- V
C CE
[TR]
CE
50
40
30
20
12
10
8
45μA
40μA
35μA
30μA
6
25μA
20μA
15μA
μA
100
4
50μA
10
0
10μA
5μA
2
0
I =0μA
I =0μA
B
0.8
B
0
0.2
0.4
0.6
1.0
0
10
20
30
40
50
Collector-to-Emitter Voltage, V
-- V ITR10340
[TR]
Collector-to-Emitter Voltage, V
-- V ITR10341
CE
CE
I
C
-- V
BE
h
-- I
C
[TR]
=6V
FE
2
160
140
120
100
80
V
V
=6V
CE
CE
1000
7
5
Ta=75°C
3
2
--25°
C
60
40
100
7
20
0
5
3
2
3
5
2
3
5
2
3
5
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10
100
ITR10343
Base-to-Emitter Voltage, V
BE
-- V ITR10342
Collector Current, I -- mA
C
No.8278-4/8
CPH5901
f
-- I
[TR]
=6V
C
-- V
[TR]
T
C
ib
EB
7
5
5
V
f=1MHz
CE
3
2
3
2
10
7
5
100
7
5
3
2
3
2
1.0
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
1.0
10
100
1.0
10
Emitter-to-Base Voltage, V
EB
-- V
Collector Current, I -- mA
ITR10344
ITR10345
C
Cob -- V
[TR]
V
(sat) -- I
[TR]
CB
CE
C
3
2
3
2
f=1MHz
I
/ I =10
B
C
1.0
10
7
5
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
Collector-to-Base Voltage, V
-- V
ITR10346
Collector Current, I -- mA
ITR10347
CB
C
P
-- Ta
V
(sat) -- I
[TR]
[TR]
C
BE
C
400
10
I
/ I =10
B
C
7
5
350
300
250
200
150
100
3
2
1.0
7
5
50
0
3
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
Collector Current, I -- mA
ITR10348
Ambient Temperature, Ta -- °C
IT09863
C
No.8278-5/8
CPH5901
Embossed Taping Specification
CPH5901F-TL-E, CPH5901G-TL-E
No.8278-6/8
CPH5901
Outline Drawing
Land Pattern Example
CPH5901F-TL-E, CPH5901G-TL-E
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.6
0.95
0.95
No.8278-7/8
CPH5901
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
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mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No.8278-8/8
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