CPH6636R [ONSEMI]
N-Channel Power MOSFET;
| 型号： | CPH6636R |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总5页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2224
CPH6636R
N-Channel Power MOSFET
http://onsemi.com
24V, 6A, 20m
Ω
, Dual CPH6 Common Drain
Features
• Low On-resistance
• Best suited for LiB charging and discharging switch
• With a built-in gate resistor
• 2.5V drive
• Common-drain type
• Halogen free compliance
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
DSS
24
V
GSS
12
V
I
I
6
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate(900mm2
36
0.9
A
DP
P
×
0.8mm) 1unit
0.8mm)
W
W
°C
°C
D
T
P
When mounted on ceramic substrate(900mm2
×
1.0
Channel Temperature
Storage Temperature
Tch
150
Tstg
- 55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Ratings
Parameter
Symbol
Conditions
Unit
min
24
typ
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V(
)
I
=1mA, V =0V
V
μA
μA
V
BR DSS
D
GS
I
I
V
V
V
V
=20V, V =0V
1
1
DSS
GSS
(off)
DS
GS
DS
DS
GS
=±8V, V =0V
DS
V
=10V, I =1mA
0.5
1.3
GS
D
Forward Transfer Admittance
| yfs |
=10V, I =3A
11
S
D
R
R
R
R
(on)1
(on)2
(on)3
(on)4
I
I
I
I
=3A, V =4.5V
GS
12.8
13.3
14.6
16.4
16
16.7
18.3
20.5
65
20
21.7
25.6
28.7
mΩ
mΩ
mΩ
mΩ
ns
DS
DS
DS
DS
D
D
D
D
=3A, V =4.0V
GS
Static Drain to Source On-State Resistance
=3A, V =3.1V
GS
=3A, V =2.5V
GS
Turn-ON Delay Time
Rise Time
t (on)
d
t
300
22000
98000
3
ns
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
ns
t
ns
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qg
nC
nC
nC
V
Qgs
Qgd
V
=10V, V =4.5V, I =6A
DS GS
1
D
0.5
V
SD
I =6A, V =0V
GS
0.78
1.2
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
October, 2013
O0913 TKIM TC-00003037 No. A2224-1/5
CPH6636R
No.A2224-2/5
CPH6636R
No.A2224-3/5
CPH6636R
Package Dimensions
CPH6636R-TL-W
CPH6
CASE 318BD
ISSUE O
Unit : mm
1: Source1
2: Drain
3: Source2
4: Gate2
5: Drain
6: Gate1
Land Pattern Example
0.6
0.95
0.95
Ordering & Package Information
Packing Type:TL
Marking
Shipping
note
Device
Package
Pb-Free
And
Halogen Free
CPH6, SC-74
SOT-26, SOT-457
3,000
pcs. / reel
CPH6636R-TL-W
TL
Electrical Connection
Switching Time Test Circuit
6
5
4
1
2
3
No.A2224-4/5
CPH6636R
Note on usage : Since the CPH6636R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.A2224-5/5
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