CSPEMI204FCTAG [ONSEMI]

带 ESD 保护的 EMI 滤波器;
CSPEMI204FCTAG
型号: CSPEMI204FCTAG
厂家: ONSEMI    ONSEMI
描述:

带 ESD 保护的 EMI 滤波器

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中文:  中文翻译
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CSPEMI204  
EMI Filter with ESD  
Protection  
Product Description  
The CSPEMI204 is an L−R−C EMI filter array with ESD protection  
that integrates two Pi−filters (C−L−R−C) to suppress EMI/RFI Noise.  
CSPEMI204 includes ESD protection diodes on all input/output pins,  
and provides a very high level of protection for sensitive electronic  
components against possible electrostatic discharge (ESD). The ESD  
diodes connected to the filter ports safely dissipate ESD strikes of  
30 kV, which is beyond the maximum requirement of the  
IEC61000−4−2 international standard.  
www.onsemi.com  
WLCSP5  
FC SUFFIX  
CASE 567MA  
Features  
Two Channels of EMI Filtering  
BLOCK DIAGRAM  
30 kV ESD Protection (IEC 61000−4−2, Contact Discharge)  
30 kV ESD Protection (IEC 61000−4−2, Air Discharge)  
Filter#2  
Filter#1  
A3  
A1  
C3  
C1  
Greater than 45 dB of Attenuation at 900 MHz  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
GND B1  
GND B1  
Mobile Phones  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
Unit  
ATM  
ESD Discharge IEC61000−4−2  
Contact Discharge  
Air Discharge  
V
pp  
kV  
30  
30  
AT = Specific Device Code  
M
= Date Code  
RMS Current per Line  
I
350  
mA  
°C  
°C  
°C  
Line  
Operating Temperature Range  
Storage Temperature Range  
T
J
−40 to +125  
−55 to +150  
260  
ORDERING INFORMATION  
T
stg  
Device  
Package  
Shipping  
Lead Solder Temperature  
(10 second duration)  
T
L
CSPEMI204FCTAG  
WLCSP5  
(Pb−Free)  
5000 / Tape &  
Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
August, 2015 − Rev. 0  
CSPEMI204/D  
CSPEMI204  
PACKAGE/PINOUT DIAGRAMS  
Table 1. PIN DESCRIPTIONS  
Pin  
A1  
C1  
A3  
C3  
B2  
Name  
Filter #1  
Filter #1  
Filter #2  
Filter #2  
GND  
Description  
Filter #1 Input/Output  
Top View  
(Bumps Down View)  
Bottom View  
(Bumps Up View)  
Orientation  
Marking  
Filter #1 Input/Output  
Filter #2 Input/Output  
Filter #2 Input/Output  
Device Ground  
B
A
C
+
+
1
A1  
A3  
C1  
C3  
B2  
AT  
2
3
WLCSP5 Package  
Table 2. ELECTRICAL OPERATING CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
V
RWM  
Working Voltage  
3.0  
V
BR  
Breakdown Voltage  
I = 1 mA; (Note 4)  
T
6.0  
V
I
Channel Leakage Current  
V
IN  
= 3.0 V, GND = 0 V  
400  
3.0  
nA  
W
LEAK  
R
Channel Resistance  
CH  
(Pins A1 – A3, C1 – C3)  
C
Line Capacitance  
V
= 0 V, f = 1 MHz  
185  
250  
2.0  
315  
pF  
t
R
f
Cut­ off Frequency  
450 W Source and  
MHz  
3dB  
10 kW Load Termination  
f
Cut­ off Frequency  
50 W Termination  
25  
MHz  
dB  
3dB  
F
atten  
Stop Band Attenuation  
@ 700 MHz  
@ 900 MHz  
40  
47  
V
ESD  
In­ system ESD Withstand Voltage  
a) Contact discharge per IEC 61000­ 4­ 2 standard, Level 4  
(External Pins)  
(Notes 1 and 2)  
kV  
30  
30  
b) Contact discharge per IEC 61000­ 4­ 2 standard, Level 1  
(Internal Pins)  
V
CL  
TLP Clamping Voltage  
Forward I = 8 A  
9.8  
11.5  
−9.7  
−11.7  
V
PP  
Forward I = 16 A  
PP  
Forward I  
=
8 A  
PP  
Forward I  
=
16 A  
PP  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Standard IEC61000−4−2 with C  
= 150 pF, R  
= 330, GND grounded.  
Discharge  
Discharge  
2. These measurements performed with no external capacitor.  
3. TVS devices are normally selected according to the working peak reverse voltage (V  
or continuous peak operating voltage level.  
), which should be equal to or greater than the DC  
RWM  
4. V is measured at pulse test current I .  
BR  
T
www.onsemi.com  
2
 
CSPEMI204  
PERFORMANCE INFORMATION  
Typical Filter Performance  
0
0
−10  
−20  
−30  
−40  
−10  
−20  
−30  
−40  
−50  
−60  
−70  
−80  
−50  
−60  
−90  
−100  
1.E+05  
1.E+06  
1.E+07  
1.E+08  
1.E+09  
1.E+10  
1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 1. Typical Insertion Loss (50 W  
Figure 3. Typical Insertion Loss (450 W Source  
and 10 kW Load Termination)  
Termination)  
−80  
−85  
−90  
−95  
−100  
−105  
−110  
−115  
−120  
20  
200  
2000  
20000  
FREQUENCY (Hz)  
Figure 2. Typical THD+N at 1.8 Vpp  
www.onsemi.com  
3
CSPEMI204  
IEC61000−4−2 Waveform  
IEC 61000−4−2 Spec.  
I
peak  
First Peak  
Current  
(A)  
100%  
90%  
Test Volt-  
age (kV)  
Current at  
30 ns (A)  
Current at  
60 ns (A)  
Level  
1
2
3
4
2
4
6
8
7.5  
15  
4
8
2
4
6
8
I @ 30 ns  
22.5  
30  
12  
16  
I @ 60 ns  
10%  
t
P
= 0.7 ns to 1 ns  
Figure 4. IEC61000−4−2 Spec  
Oscilloscope  
ESD Gun  
TVS  
50 W  
Cable  
50 W  
Figure 5. Diagram of ESD Clamping Voltage Test Setup  
The following is taken from Application Note  
AND8308/D − Interpretation of Datasheet Parameters  
for ESD Devices.  
systems such as cell phones or laptop computers it is not  
clearly defined in the spec how to specify a clamping voltage  
at the device level. ON Semiconductor has developed a way  
to examine the entire voltage waveform across the ESD  
protection diode over the time domain of an ESD pulse in the  
form of an oscilloscope screenshot, which can be found on  
the datasheets for all ESD protection diodes. For more  
information on how ON Semiconductor creates these  
screenshots and how to interpret them please refer to  
AND8307/D.  
ESD Voltage Clamping  
For sensitive circuit elements it is important to limit the  
voltage that an IC will be exposed to during an ESD event  
to as low a voltage as possible. The ESD clamping voltage  
is the voltage drop across the ESD protection diode during  
an ESD event per the IEC61000−4−2 waveform. Since the  
IEC61000−4−2 was written as a pass/fail spec for larger  
www.onsemi.com  
4
CSPEMI204  
−25  
25  
20  
15  
10  
5
−20  
−15  
−10  
−5  
0
0
0
2
4
6
8
10  
12  
14  
0
−2  
−4  
−6  
−8  
−10  
−12  
−14  
V , VOLTAGE (V)  
C
V , VOLTAGE (V)  
C
Figure 6. Positive TLP I−V Curve (Preliminary)  
Figure 7. Negative TLP I−V Curve (Preliminary)  
NOTE: TLP parameter: Z = 50 W, t = 100 ns, t = 300 ps, averaging window: t = 30 ns to t = 60 ns. V is the equivalent voltage  
IEC  
0
p
r
1
2
stress level calculated at the secondary peak of the IEC 61000−4−2 waveform at t = 30 ns with 2 A/kV. See TLP description  
below for more information.  
50 W Coax  
Cable  
Transmission Line Pulse (TLP) Measurement  
L
Attenuator  
S
Transmission Line Pulse (TLP) provides current versus  
voltage (I−V) curves in which each data point is obtained  
from a 100 ns long rectangular pulse from a charged  
transmission line. A simplified schematic of a typical TLP  
system is shown in Figure 8. TLP I−V curves of ESD  
protection devices accurately demonstrate the product’s  
ESD capability because the 10s of amps current levels and  
under 100 ns time scale match those of an ESD event. This  
is illustrated in Figure 9 where an 8 kV IEC 61000−4−2  
current waveform is compared with TLP current pulses at  
8 A and 16 A. A TLP I−V curve shows the voltage at which  
the device turns on as well as how well the device clamps  
voltage over a range of current levels.  
÷
50 W Coax  
Cable  
I
M
V
M
10 MW  
DUT  
V
C
Oscilloscope  
Figure 8. Simplified Schematic of a Typical TLP  
System  
Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms  
www.onsemi.com  
5
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WLCSP5, 1.26x0.89  
CASE 567MA  
ISSUE O  
SCALE 4:1  
DATE 07 JUL 2015  
NOTES:  
E
A
B
D
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
PIN A1  
REFERENCE  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. COPLANARITY APPLIES TO SPHERICAL  
CROWNS OF SOLDER BALLS.  
4. DIMENSION b IS MEASURED AT THE MAXIMUM  
BALL DIAMETER PARALLEL TO DATUM C.  
2X  
0.10  
0.10  
C
MILLIMETERS  
DIM  
A
A1  
A2  
b
D
E
MIN  
−−−  
0.18  
MAX  
0.50  
0.22  
2X  
C
TOP VIEW  
SIDE VIEW  
0.255 REF  
0.235  
0.295  
1.26 BSC  
A2  
0.89 BSC  
0.50 BSC  
0.435 BSC  
0.10  
C
e
e1  
A
GENERIC  
MARKING DIAGRAM*  
0.05  
C
SEATING  
PLANE  
NOTE 3  
C
A1  
XXM  
e/2  
XX = Specific Device Code  
e
5X  
b
M
= Date Code  
e1  
0.10  
0.05  
C
C
A B  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present.  
C
B
A
RECOMMENDED  
1
2 3  
SOLDERING FOOTPRINT*  
BOTTOM VIEW  
PACKAGE  
OUTLINE  
A1  
5X  
0.27  
0.87  
PITCH  
0.50  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON00069G  
WLCSP5, 1.26X0.89  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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