EFC2J013NUZTDG [ONSEMI]
双 N 沟道功率 MOSFET 12V，17A，5.8mΩ;
| 型号： | EFC2J013NUZTDG |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道功率 MOSFET 12V，17A，5.8mΩ |
| 文件： | 总6页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFC2J013NUZ
Power MOSFET
for 1‐Cell Lithium‐ion
Battery Protection
12 V, 5.8 mW, 17 A, Dual N-Channel
www.onsemi.com
This Power MOSFET features a low on-state resistance. This device
is suitable for applications such as power switches of portable
machines. Best suited for 1-cell lithium-ion battery applications.
V
SSS
R
MAX
I MAX
S
SS(ON)
12 V
5.8 mW @ 4.5 V
6.2 mW @ 3.8 V
7.5 mW @ 3.1 V
9.0 mW @ 2.5 V
17 A
Features
• 2.5 V Drive
• 2 kV ESD HBM
• Common-Drain Type
• ESD Diode-Protected Gate
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ELECTRICAL CONNECTION
Compliant
4, 6
Applications
• 1-Cell Lithium-ion Battery Charging and Discharging Switch
5
2
Specifications
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
A
1: Source1
2: Gate1
3: Source1
4: Source2
5: Gate2
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Symbol
Value
12
Unit
V
V
SSS
GSS
V
8
V
6: Source2
1, 3
I
S
17
A
N-Channel
Source Current (Pulse)
I
SP
68
A
PW ≤ 10 ms, duty cycle ≤ 1%
PIN ASSIGNMENT
3
1
2
Total Dissipation (Note 1)
Junction Temperature
P
1.8
W
T
S1
G1
S1
T
150
°C
j
WLCSP6
Storage Temperature
T
stg
−55 to +150
°C
(2.00 x 1.49 x 0.10)
CASE 567UF
S2
6
G2
5
S2
4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Bottom View
MARKING DIAGRAM
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
NT
AYWZZ
G
Junction to Ambient (Note 1)
R
69.4
°C/W
θ
JA
2
1. Surface mounted on ceramic substrate (5000 mm × 0.8 mm).
NT = Specific Device Code
A
Y
= Assembly Location
= Year
W
= Work Week
ZZ = Assembly Lot
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
November, 2018 − Rev. 1
EFC2J013NUZ/D
EFC2J013NUZ
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
V
Source to Source Breakdown Voltage I = 1 mA, V = 0 V, V Test Circuit
SSS
12
(BR)SSS
S
GS
I
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
V
= 10 V, V = 0 V
1
mA
mA
V
SSS
SS
GS
SS
GS
I
V
V
=
8 V, V = 0 V
1
GSS
SS
V
R
(th) Gate Threshold Voltage
= 6 V, I = 1 mA
0.4
3.0
3.2
3.4
3.8
1.3
5.8
6.2
7.5
9.0
GS
S
(on) Static Source to Source On-State
Resistance
I = 5 A, V = 4.5 V
S
4.35
4.6
5.0
5.6
11
mW
mW
mW
mW
ms
SS
GS
I = 5 A, V = 3.8 V
S
GS
I = 5 A, V = 3.1 V
S
GS
I = 5 A, V = 2.5 V
S
GS
t (on)
d
Turn-ON Delay Time
Rise Time
V
= 5 V, V = 3.8 V, I = 5 A
SS GS S
Rg = 10 kW Switching Test Circuit
t
r
26
ms
t (off)
Turn-OFF Delay Time
Fall Time
130
73
ms
d
t
f
ms
Qg
Total Gate Charge
Forward Source to Source Voltage
V
= 5 V, V = 4.5 V, I = 5 A
37
nC
V
SS
GS
S
V
I = 3 A, V = 0 V
S
0.76
1.2
F(S−S)
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
t (on), t t (off), t
d r, d
f
S2
S2
RL
G2
G1
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
1 mA, 5 ms
V
Rg
V
SS
S1
S1
Figure 1. Switching Test Circuit
Figure 2. VSSS Test Circuit
ORDERING INFORMATION
†
Device
EFC2J013NUZTDG
Marking
Package
Shipping (Qty / Packing)
NT
WLCSP6, 2.00 x 1.49 x 0.10
(Pb-Free / Halogen Free)
5,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
EFC2J013NUZ
TYPICAL CHARACTERISTICS
6.0
5.0
4.0
3.0
12
V
= 6 V
Ta = 25°C
Single pulse
SS
Single pulse
4.5 V
3.1 V
9
6
= 2.5 V
V
GS
3.8 V
2.0
1.0
0
3
0
1.2
– V
0.8
Gate to Source Voltage, V
0
0.6
1.0
1.4
0.035
0.02
Source to Source Voltage, V
0
0.005 0.01 0.015
0.025
0.03
– V
GS
SS
Figure 3. On-Region Characteristics
Figure 4. Transfer Characteristics
8.0
7.5
10
Single pulse
I
= 5 A
S
Single pulse
9
8
7
6
5
4
7.0
6.5
6.0
5.5
I = 5 A, V = 2.5 V
S GS
I
S
= 5 A, V = 3.1 V
GS
5.0
4.5
4.0
3.5
3.0
Ta = 75°C
I
S
= 5 A, V = 4.5 V
GS
25°C
I
S
= 5 A, V = 3.8 V
GS
−25°C
3
2
1
2
3
4
5
6
7
8
−60 −40 −20
0
20 40 60
80 100 120 140160
Ambient Temperature, Ta – °C
Gate to Source Voltage, V
– V
GS
Figure 5. On-Resistance vs. Gate-to-Source
Voltage
Figure 6. On-Resistance vs. Temperature
10.0
1000
100
10
V
= 0 V
GS
1.0
(off)
t
d
0.1
t
f
t
r
0.01
(on)
t
d
V
V
= 5 V
= 3.8 V
SS
GS
I
= 5 A
S
0.001
1
0.1
0
0.4
0.6
0.8
1.0
1.2
0.2
10
Forward Source to Source Voltage, V
– V
Gate Resistance, Rg – kΩ
F(S−S)
Figure 7. Forward Source-to-Source Voltage
vs. Current
Figure 8. Switching Time vs. Gate Resistance
www.onsemi.com
3
EFC2J013NUZ
TYPICAL CHARACTERISTICS
4.5
100
ABSOLUTE MAXIMUM RATINGS
V
= 5 V
= 5 A
SS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
100 ms
I
S
10 ms
1 ms
100 ms
10.0
Operation in this area
1.0
0.1
0.1
DC Operation
is limited by R (on).
SS
Ta = 25°C
Single pulse
Surface mounted on ceramic substrate
(5000 mm2 x 0.8 mm)
0.5
0
0
10
20
30
40
5
15
25
35
0.01
0.1
1.0
10.0
Total Gate Charge, Q – nC
Source to Source Voltage, V
– V
g
SS
Figure 9. Gate-to-Source Voltage vs. Total Charge
Figure 10. Safe Operating Area
2.0
Surface mounted on ceramic substrate
1.8
(5000 mm2 x 0.8 mm)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta – °C
Figure 11. Total Dissipation vs. Temperature
100
Duty Cycle = 50%
20%
10%
5%
10
2%
1%
1.0
0.1
Single Pulse
Surface mounted on ceramic substrate
(5000 mm2 x 0.8 mm)
1E−05
0.0001
0.001
0.01
Pulse Time, P – s
0.1
1.0
10
T
Figure 12. Thermal Response
Note on Usage: Since the EFC2J013NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Please contact sales for use except the designated application.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP6 2.00x1.49x0.10
CASE 567UF
ISSUE O
SCALE 4:1
DATE 21 APR 2017
E
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN 1
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM
A
b
D
E
e
MIN
0.08
0.27
1.95
1.44
NOM
0.10
0.30
2.00
1.49
MAX
0.12
0.33
2.05
1.54
0.65 BSC
TOP VIEW
GENERIC
MARKING DIAGRAM*
A
0.03
0.03
C
C
XXXXX
G
AYWZZ
SEATING
PLANE
C
SIDE VIEW
e
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
= Work Week
3
1
4
6
ZZ = Assembly Lot
G
e
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
6X
b
0.05
M
C A B
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
1
PACKAGE
OUTLINE
0.65
PITCH
6X
0.30
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30589G
WLCSP6 2.00x1.49x0.10
PAGE 1 OF 1
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