ESD7321_16 [ONSEMI]
ESD Protection Diodes;
| 型号： | ESD7321_16 |
| 厂家： | 
ONSEMI |
| 描述： | ESD Protection Diodes |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD7321
ESD Protection Diodes
Low Capacitance ESD Protection Diode
for High Speed Data Lines
The ESD7321 ESD protection diodes are designed to protect high
speed data lines from ESD. Low capacitance and low ESD clamping
voltage make this device an ideal solution for protecting voltage
sensitive high speed data lines.
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MARKING
DIAGRAM
Features
PIN 1
M
• Low Capacitance (0.5 pF Max, I/O to GND)
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
X3DFN2
CASE 152AF
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
T
= Specific Device Code
(Rotated 90° clockwise)
M = Date Code
Typical Applications
• USB 3.x
PIN CONFIGURATION
AND SCHEMATIC
• MHL 2.0
• SATA/SAS
• PCI Express
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
ORDERING INFORMATION
Rating
Symbol
Value
−55 to +125
−55 to +150
260
Unit
°C
†
Device
ESD7321MUT5G
Package
Shipping
Operating Junction Temperature Range
Storage Temperature Range
T
J
X3DFN2
(Pb−Free)
10000 / Tape &
Reel
T
stg
°C
Lead Solder Temperature −
Maximum (10 Second Duration)
T
L
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
ESD
15
15
kV
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2016 − Rev. 2
ESD7321/D
ESD7321
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
I
T
I
V
R
BR RWM
V
Clamping Voltage @ I
V
C
V
C
PP
V
I
V
V
V
R
T
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
PP
I
T
Bi−Directional ESD
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Condition
Min
Typ
Max
Unit
V
V
RWM
7.0
V
BR
I = 1 mA (Note 1)
T
8.0
V
Reverse Leakage Current
Clamping Voltage
I
V
= 7.0 V, I/O to GND
200
nA
V
R
RWM
V
I
PP
= 8 A − (IEC61000−4−2 Level 2 Equivalent
( 4 kV Contact, 8 kV Air))
18
C
ESD Clamping Voltage
Junction Capacitance
Dynamic Resistance
V
Per IEC 61000−4−2
= 0 V, f = 1 MHz
See Figures 1 and 2
0.5
C
C
V
R
pF
J
R
TLP Pulse
1
W
DYN
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
ESD7321
TYPICAL CHARACTERISTICS
Figure 3. IV Characteristics
Figure 4. CV Characteristics
20
18
16
14
12
10
8
0
−2
−4
−6
−8
−10
−12
−14
−16
6
4
2
0
−18
−20
0
5
10
15
20
25
30
−30
−25
−20
−15
−10
−5
0
VOLTAGE (V)
VOLTAGE (V)
Figure 5. Positive TLP I−V Curve
Figure 6. Negative TLP I−V Curve
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3
ESD7321
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 7. IEC61000−4−2 Spec
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 8. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 9 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 8. Simplified Schematic of a Typical TLP
System
Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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4
ESD7321
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
D
2. CONTROLLING DIMENSION: MILLIMETERS.
PIN 1
INDICATOR
(OPTIONAL)
MILLIMETERS
DIM MIN
MAX
0.33
0.05
0.28
0.66
0.36
A
A1
b
D
E
0.25
−−−
E
TOP VIEW
0.22
0.58
0.28
e
0.355 BSC
0.23
L2 0.17
0.05
0.05
C
C
A
2X
RECOMMENDED
MOUNTING FOOTPRINT*
A1
SIDE VIEW
SEATING
PLANE
C
2X
0.30
0.74
e
1
2X b
1
2
2X
0.31
M
0.05
C A B
DIMENSIONS: MILLIMETERS
2X L2
M
0.05
C A B
BOTTOM VIEW
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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Sales Representative
ESD7321/D
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