FAN25800AUCF27X [ONSEMI]

Low-Noise, LDO Regulator;
FAN25800AUCF27X
型号: FAN25800AUCF27X
厂家: ONSEMI    ONSEMI
描述:

Low-Noise, LDO Regulator

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April 2015  
FAN25800  
500 mA, Low-IQ, Low-Noise, LDO Regulator  
Features  
Description  
.
.
.
.
VIN: 2.3 V to 5.5 V  
The FAN25800 is a linear low-dropout regulator with a  
high PSRR (85 dB at 100 Hz) and low output noise  
(typically 8 µVRMS over a 10 Hz to 100 kHz bandwidth).  
The LDO can provide up to 500 mA of output current.  
VOUT = 2.7 V, 3.3 V (IOUT Max. = 500 mA)  
VOUT = 2.8 V (IOUT Max. = 250 mA)  
Output Noise Density at 250 mA and  
10 kHz = 19 nV/Hz (Integrated 8 µVrms)  
The enable control pin can be used to shut down the  
device and disconnect the output load from the input.  
During shutdown, the supply current drops below 1 µA.  
.
Low IQ of 17 µA in Regulation and Low-IQ Dropout  
Mode with Optimized Dropout Transitions  
The FAN25800 is designed to be stable with space-  
saving ceramic capacitors as small as 0201 case size.  
The FAN25800 is available in a 4-bump, 0.35 mm pitch,  
WLCSP package.  
.
.
.
.
.
.
<70 mV Dropout Voltage at 250 mA Load  
Controlled Soft-Start to Reduce Inrush Current  
Thermal Shutdown Protection (TSD)  
Input Under-Voltage Lockout (UVLO)  
Short-Circuit Protection (SCP)  
VIN  
1.5µF  
FAN25800  
VOUT  
Stable with Two 1.5 µF, 0201 Ceramic Capacitors  
at VOUT  
1.5µF 1.5µF  
.
4-Ball WLCSP, 0.65 mm x 0.65 mm, 0.35 mm  
Pitch, Plated Solder, 330 µm Maximum Thickness  
EN  
Applications  
Figure 1. Typical Application  
.
.
.
WiFi Modules  
PDA Handsets  
Smart Phones, Tablets, Portable Devices  
Ordering Information  
Operating  
Temperature  
Packing  
Method  
Part Number(1)  
VOUT  
IOUT_MAX  
Package  
FAN25800AUC33X  
FAN25800AUC28X  
FAN25800AUCF27X  
Note:  
3.3 V  
2.8 V  
2.7 V  
500 mA  
250 mA  
500 mA  
4-Bump, WLCSP, 0.65 x  
0.65 mm, 0.35 mm Pitch  
-40°C to 85°C  
Tape & Reel  
1. For other trim options, please contact a Fairchild representative.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
 
 
Block Diagram  
VIN  
VOUT  
CIN  
COUT  
FILTER  
VREF  
EN  
GND  
Figure 2. IC and System Block Diagram  
Table 1. Recommended External Components  
Component  
Description  
Vendor  
Parameter Typ. Unit  
CIN  
1.5 µF, 6.3 V, X5R, 0201  
2x1.5 µF, 6.3 V, X5R, 0201  
1.0 µF, 6.3 V, X5R, 0201  
Murata GRM033R60J155M  
Murata GRM033R60J155M  
Murata GRM033R60J105M  
1.5(2) µF  
1.5(2) µF  
1.0(2) µF  
COUT  
C
(3)  
CAlternative  
Notes:  
2. Capacitance value does not reflect effects of bias, tolerance, and temperature. See Recommended Operating  
Conditions and Operation Description sections for more information.  
3. CAlternative can be used for both CIN and COUT. FAN25800 is stable with one 1 µF at CIN and one 1 µF at COUT  
.
Pin Configuration  
A1 A2 VOUT  
VOUT A2 A1  
VIN  
EN  
VIN  
EN  
B1  
B1 B2  
B2  
GND  
GND  
Figure 3. Top-Through View  
Figure 4. Bottom View  
Pin Definitions  
Pin #  
Name  
Description  
Input Voltage. Connect to input power source and CIN.  
Output Voltage. Connect to COUT and load.  
A1  
A2  
VIN  
VOUT  
Enable. The device is in Shutdown Mode when this pin is LOW. No internal pull-down.  
B1  
B2  
EN  
Do not leave this pin floating. Recommended to not tie EN pin directly to VIN.(4)  
Ground. Power and IC ground. All signals are referenced to this pin.  
GND  
Note:  
4. Recommended to use logic voltage of 1.8 V to drive the EN pin.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
2
 
 
 
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Input Voltage with Respect to GND  
Min.  
Max.  
Unit  
VIN  
VCC  
TJ  
-0.3  
-0.3  
-40  
-65  
6.0  
VIN+0.3(5)  
+150  
V
Voltage on Any Other Pin (with Respect to GND)  
Junction Temperature  
V
°C  
°C  
°C  
TSTG  
TL  
Storage Temperature  
+150  
Lead Soldering Temperature, 10 Seconds  
+260  
Human Body Model,  
ANSI/ESDA/JEDEC JS-001-2012  
4000  
1500  
Electrostatic Discharge  
Protection Level  
ESD  
V
Charged Device Model per JESD22-C101  
LU  
Latch Up  
JESD 78D  
Note:  
5. Lesser of 6.0 V or VIN + 0.3 V.  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not  
recommend exceeding them or designing to absolute maximum ratings.  
Symbol  
Parameter  
Min. Typ. Max. Unit  
VIN  
Supply Voltage  
Output Current (VOUT = 2.7 V, 3.3 V)  
2.3  
5.5(6)  
500  
500  
250  
V
(7)  
IOUT_MAX  
mA  
mA  
mA  
µF  
µF  
°C  
IOUT_Recommend Output Current (VOUT = 3.3 V)  
Output Current (VOUT = 2.7 V, 2.8 V)  
CIN  
COUT  
TA  
Input Capacitor (Effective Capacitance)(8)  
Output Capacitor (Effective Capacitance)(8)  
Ambient Temperature  
0.4  
0.4  
0.8  
0.8  
15.0  
+85  
40  
40  
TJ  
Junction Temperature  
+125  
°C  
Note:  
6. For VIN 3.4 V, thermal properties of the device must be taken into account at maximum load of 500 mA; refer to  
JA thermal properties.  
7. IOUT_MAX is for VIN = VOUT + 0.3 V.  
8. Effective capacitance, including the effects of bias, tolerance, and temperature. See the Operation Description  
section for more information.  
Thermal Properties  
Junction-to-ambient thermal resistance is a function of application and board layout. This data is measured with  
four-layer 2s2p boards in accordance to JEDEC standard JESD51. Special attention must be paid not to exceed  
junction temperature, TJ(max), at a given ambient temperature, TA.  
Symbol  
Parameter  
Junction-to-Ambient Thermal Resistance  
Typ.  
Unit  
180  
°C/W  
JA  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
3
 
 
 
 
Electrical Specifications  
Minimum and maximum values are at VIN = VOUT + 0.3 V; TA = -40°C to +85°C; and test circuit shown in Figure 1.  
Typical values are at VIN = VOUT + 0.3 V, TA = 25°C, ILOAD = 10 mA, and VEN = 1.8 V, unless otherwise noted.  
Symbol  
LDO  
Parameter  
Conditions  
Min. Typ. Max. Unit  
VIN = VOUT + 0.3 V to 4.2 V, ILOAD = 0 mA  
Dropout(10), ILOAD = 0 mA  
f = 50 Hz  
17.0 25.0  
µA  
IIN  
PSRR  
en  
VIN Supply Current  
18.5 30.0  
84  
85  
84  
f = 100 Hz  
f = 1 kHz  
IOUT = 10 mA, VIN = 3.6 V,  
VOUT = 3.3 V  
f = 10 kHz  
f = 50 Hz  
79  
dB  
68  
Power Supply Rejection  
Ratio(9)  
f = 100 Hz  
f = 1 kHz  
73  
75  
76  
IOUT = 250 mA, VIN = 3.6 V,  
VOUT = 3.3 V  
f = 10 kHz  
IOUT = 10 mA  
IOUT = 250 mA  
IOUT = 10 mA  
IOUT = 250 mA  
20  
19  
8
40  
39  
Output Noise Voltage  
Density(9)  
f = 10 kHz, VOUT = 3.3 V  
nV/√Hz  
25  
Output Noise Voltage  
(Integrated)(9)  
f = 10 Hz 100 kHz,  
VOUT = 3.3 V  
en_bw  
VDO  
µVRMS  
mV  
8
25  
VOUT Dropout Voltage(10) VOUT = VOUT_TARGET 100 mV, IOUT = 250 mA  
70  
130  
5 mA ≤ IOUT IOUT_Recommend  
VIN = VOUT + 0.3 V to 4.2 V  
,
ΔVOUT  
VOUT Voltage Accuracy  
-1.9  
+1.9  
%
ΔVOUT_LOAD Load Regulation  
IOUT = 5 mA to IOUT_MAX  
12  
35 µV/mA  
IOUT = 0 mA → Current Limit, VOUT = 3.3 V,  
2.7V, VOUT Drops by 2%  
550  
275  
650  
800  
mA  
400  
ILIM  
VOUT Current Limit  
IOUT = 0 mA → Current Limit, VOUT = 2.8 V,  
VOUT Drops by 2%  
323  
Shutdown Supply  
Current  
ISD  
VEN = 0 V, VIN = VOUT + 0.3 V to 4.2 V  
Rising VIN  
0.125 1.000  
µA  
V
Under-Voltage Lockout  
Threshold  
VUVLO  
2.1  
2.3  
Under-Voltage Lockout  
Hysteresis  
VUVHYS  
tSTART  
150  
mV  
µs  
Startup Time  
Rising EN to 95% VOUT, IOUT = 10 mA  
Rising Temperature  
250  
150  
20  
500  
TSD  
Thermal Shutdown  
°C  
Hysteresis  
Logic Levels: EN  
Enable High-Level Input  
Voltage  
VIH  
VIL  
1.05  
V
Enable Low-Level Input  
Voltage  
0.4  
V
IEN  
Input Bias Current  
VEN = 1.8 V  
0.04 1.00  
µA  
Notes:  
9. Guaranteed by design; not tested in production.  
10. Dropout voltage = VIN - VOUTx when VOUT drops more than 100 mV below the nominal regulated VOUT level.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
4
 
 
Typical Characteristics  
Unless otherwise specified; VIN = 3.6 V, VOUT = 3.3 V, TA = +25°C, and test circuit per Figure 1.  
Figure 5. Output Regulation vs. Load Current and  
Input Voltage  
Figure 6 Output Regulation vs. Load Current  
and Temperature  
Figure 7. Quiescent Current vs. Input Voltage  
and Temperature  
Figure 8. Shutdown Current vs. Input Voltage  
and Temperature  
Figure 9. PSRR vs. Frequency, 10 mA Load  
Figure 10. Output Noise Voltage vs. Frequency,  
10 mA Load  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
5
Typical Characteristics  
Unless otherwise specified; VIN = 3.6 V, VOUT = 3.3 V, TA = +25°C, and test circuit per Figure 1.  
Figure 11. Load Transient, IOUT = 10 250 10 mA,  
Figure 12. Line Transient, VIN = 4.0 3.6 4.0 V,  
10 µs Transitions, 10 mA Load  
VIN=3.6 V, 400 ns Edge  
Figure 13. Line Transient, VIN = 4.0 3.6 4.0 V,  
Figure 14. Startup, 10 mA Load  
10 µs Transitions, 250 mA Load  
Figure 15. Startup, 250 mA Load  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
6
Circuit Description  
The FAN25800 is a linear low-dropout (LDO) regulator  
that has high PSRR and low output noise. The enable  
control pin can be used to shut down the device and  
disconnect the output load from the input. During  
shutdown, the supply current drops below 1 µA. The  
LDO is designed to be stable with space-saving ceramic  
capacitors as small as 0201 case size.  
characteristics of the capacitors must be considered  
when selecting the voltage rating and the case size of  
the capacitor. Figure 16 is a typical derating curve for a  
0201 case size, 1.5 µF, 6.3 V, X5R capacitor.  
Enable and Soft-Start  
When EN is LOW, all circuits are off and the IC draws  
<550 nA of current. The EN pin does not have an  
internal pull-down resistor and must not be left floating.  
When EN is HIGH and VIN is above the UVLO  
threshold, the regulator begins a soft-start cycle for the  
output. The soft-start cycle controls inrush current,  
limiting it to the ILIM peak current limit.  
Short-Circuit and Thermal Protection  
The output current is short-circuit protected. When an  
output fault occurs, the output current is automatically  
limited to ILIM and VOUT drops. The resultant VOUT is  
equal to ILIM multiplied by the fault impedance.  
Figure 16. Capacitor DC Bias Characteristics  
Typical Application for Post Regulation  
Due to its high PSRR and low output noise, the  
FAN25800 can be used as a post-DC-DC regulator to  
reduce output ripple and output noise at high efficiency  
for noise-sensitive applications. Figure 17 shows a post-  
DC-DC regulation of the LDO with a buck converter.  
The capacitor on the output of the buck converter can  
be shared by the LDO as its input capacitor.  
Short-circuit fault or output overload may cause the die  
temperature to increase and exceed the maximum  
rating due to power dissipation. In such cases  
(depending upon the ambient temperature; the VIN, load  
current, and thermal resistance (θJB) of the mounted  
die), the device may enter thermal shutdown.  
If the die temperature exceeds the thermal shutdown  
temperature threshold, the onboard thermal protection  
disables the output until the temperature drops below its  
hysteresis value. At that point, the output is re-enabled  
and a new soft-start sequence occurs.  
L
VIN  
EN  
SW  
VIN  
EN  
VOUT  
3.3 V  
5.0 V  
3.6 V  
DC-DC  
Converter  
FAN25800  
C1  
C2  
C3  
GND  
GND  
Thermal Considerations  
Figure 17. LDO as Post DC-DC Regulator  
For best performance, the die temperature and the  
power dissipated should be kept at moderate values.  
The maximum power dissipated can be evaluated  
based on the following relationship:  
PCB Layout Recommendations  
Capacitors should be placed as close to the IC as  
possible. All power and ground pins should be routed to  
their capacitors using top copper. The copper area  
connecting to the IC should be maximized to improve  
thermal performance.  
T
J(max) T  
A   
PD(max)  
(1)  
JA  
where TJ(max) is the maximum allowable junction  
temperature of the die; TA is the ambient operating  
temperature; and θJA is dependent on the  
surrounding PCB layout and can be improved by  
providing a heat sink of surrounding copper ground.  
The addition of backside copper with through-holes,  
stiffeners, and other enhancements can help reduce θJA.  
The heat contributed by the dissipation of devices  
nearby must be included in design considerations.  
Capacitor Selection  
An output capacitor with an effective capacitance  
between 400 nF and 15 µF is required for loop stability.  
The ESR value should be within 3 to 100 m. DC bias  
Figure 18. Recommended Layout  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
7
 
 
Product-Specific Dimensions  
D
E
X
Y
0.65 ±0.025 mm  
0.65 ±0.025 mm  
0.15 mm  
0.15 mm  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN25800 • Rev. 1.5  
8
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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