FAN54053UCX [ONSEMI]

高能效,1.55 A,带功率路径的锂离子开关充电器,USB-OTG,方案占位小;
FAN54053UCX
型号: FAN54053UCX
厂家: ONSEMI    ONSEMI
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高能效,1.55 A,带功率路径的锂离子开关充电器,USB-OTG,方案占位小

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April 2015  
FAN54053  
High Efficiency, 1.55 A, Li-Ion Switching Charger with  
Power Path, USB-OTG, in a Small Solution Footprint  
Features  
Description  
.
Fully Integrated, High-Efficiency Switch-Mode Charger  
for Single-Cell Li-Ion and Li-Polymer Batteries  
The FAN54053 is a 1.55 A USB-compliant switch-mode  
charger featuring power path operation, USB OTG boost  
support, JEITA temperature control, and production test mode  
support, in a small 25 bump, 0.4 mm pitch WLCSP package.  
.
Power Path Circuit Ensures Fast System Startup with a  
Dead Battery when VBUS is Connected  
To facilitate fast system startup, the IC includes a power  
path circuit, which disconnects the battery from the system  
rail, ensuring that the system can power up quickly following  
a VBUS connection. The power path circuit ensures that the  
system rail stays up when the charger is plugged in, even if  
the battery is dead or shorted.  
.
.
1.55 A Maximum Charge Current  
Programmable High Accuracy Float Voltage:  
0.5% at 25°C  
1% from 0 to 125°C  
.
.
.
.
.
.
.
.
5% Input and Charge Current Regulation Accuracy  
Temperature-Sense Input for JEITA Compliance  
Thermal Regulation and Shutdown  
4.2 V at 2.3 A Production Test Support  
5 V, 500 mA Boost Mode for USB OTG  
28 V Absolute Maximum Input Voltage  
6 V Maximum Input Operating Voltage  
The charging parameters; float voltage, input voltage  
regulation, input current, charging current, and other  
operating modes are programmable through an I2C Interface  
that operates up to 3.4 Mbps. The charger and boost  
regulator circuits switch at 3 MHz to minimize the size of  
external passive components.  
The FAN54053 provides battery charging in three phases:  
conditioning, constant current and constant voltage. The IC  
automatically restarts the charge cycle when the battery falls  
below a voltage threshold. If the input source is removed, the  
IC enters a high-impedance mode blocking battery current  
from leaking to the input. Charge status is reported back to  
the host through the I2C port.  
Programmable through High-Speed I2C Interface  
(3.4 Mb/s) with Fast Mode Plus Compatibility  
Input Current  
Fast-Charge / Termination Current  
Float Voltage  
Dynamic input voltage control prevents a weak adapters  
voltage from collapsing, ensuring charging capability from  
such adapters.  
Termination Enable  
.
3 MHz Synchronous Buck PWM Controller with  
Wide Duty Cycle Range  
The FAN54053 is available in a space saving 2.4 mm x  
2.0 mm WLCSP package.  
.
.
.
.
Small Footprint 1 H External Inductor  
Safety Timer with Reset Control  
VBUS  
CBUS  
L1  
SW  
Dynamic Input Voltage Control  
SYS  
CSYS  
PGND  
Very Low Battery Current when Charger Inactive  
Q5  
PMID  
GATE  
SYSTEM  
LOAD  
Applications  
External  
PMOS  
CMID  
.
.
.
Cell Phones, Smart Phones, PDAs  
FAN54053  
VBAT  
POK_B  
SDA  
Tablet, Portable Media Players  
Gaming Device, Digital Cameras  
CBAT  
NTC  
REF  
RREF  
SCL  
DIS  
BATTERY  
CREF  
STAT  
AGND  
+
T
All trademarks are the property of their respective owners.  
Figure 1.  
Typical Application  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 • Rev. 1.4  
 
Ordering Information  
Temperature  
PN Bits:  
IC_INFO[5:3]  
Part Number  
Package  
Packing Method  
Range  
25-Bump, Wafer-Level Chip-Scale  
Package (WLCSP), 0.4 mm Pitch  
FAN54053UCX  
-40 to 85°C  
010  
Tape and Reel  
Table 1. Feature Summary  
Battery Absent  
Watchdog  
Timer Default  
Part Number  
Slave Address Automatic Charge  
E1 Pin  
Behavior  
FAN54053  
1101011  
No  
On  
POK_B  
Disabled  
Block Diagram  
VBUS  
PMID  
SW  
Q3  
CBUS  
Q1  
CMID  
Q1A  
Q1B  
PGND  
CHARGE  
PUMP  
L1  
IBUS &  
VBUS  
CONTROL  
30mA  
AGND  
CSYS  
PWM  
MODULATOR  
Q2  
SYS  
SYSTEM  
LOAD  
VBUS OVP  
POWER OK  
PGND  
Q5  
GATE  
External  
PMOS  
Q4  
CC and CV  
Battery  
Charger  
Q4A  
Q4B  
POK_B  
SDA  
I2C INTERFACE  
VBAT  
NTC  
SCL  
CBAT  
LOGIC AND CONTROL  
DIS  
TEMP  
SENSE  
RREF  
STAT  
REF  
CREF  
BATTERY  
+
T
PMID  
Greater than VBAT  
Less than VBAT  
Q1A  
ON  
Q1B  
OFF  
ON  
SYS  
Greater than VBAT  
Less than VBAT  
Q4A  
ON  
Q4B  
OFF  
ON  
OFF  
OFF  
Figure 2.  
IC and System Block Diagram  
Table 2. Recommended External Components  
Component  
Description  
Vendor  
Parameter  
Typ.  
Unit  
L
1.0  
48  
H  
Toko DFE201610E-1R0M  
L1  
1 H, 20%, 2.7 A, 2016  
or Equivalent  
DCR (Series R)  
m  
Murata: GRM188R60J106M  
TDK: C1608X5R0J106M  
CBAT, CSYS  
CMID  
C
10  
4.7  
1.0  
10 F, 20%, 6.3 V, X5R, 0603  
4.7 F, 10%, 10 V, X5R, 0603  
1.0 F, 10%, 25 V, X5R, 0603  
F  
F  
F  
Murata: GRM188R61A475K  
TDK: C1608X5R1A475K  
C(1)  
C
Murata GRM188R61E105K  
TDK:C1608X5R1E105M  
CBUS,  
Q5  
CREF  
Fairchild FDMA905P  
RDS(ON)  
C
16  
PMOS,12 V, 16 m, MLP2x2  
1 F, 10%, 6.3 V, X5R, 0402  
m  
F  
1.0  
Note:  
1. 10 V rating is sufficient for CMID since PMID is protected from over-voltage surges on VBUS by Q3.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
2
 
 
Pin Configuration  
SDA PGND SW  
PMID VBUS  
A5  
B5  
C5  
D5  
E5  
A4  
A3  
B3  
C3  
D3  
E3  
A2  
B2  
C2  
D2  
E2  
A1  
B1  
C1  
D1  
E1  
A1  
A2  
B2  
C2  
D2  
A3  
B3  
C3  
A4  
B4  
C4  
A5  
SCL  
B1  
B4  
B5  
DIS  
C1  
GATE  
C5  
C4  
D4  
STAT  
D1  
SYS VBAT NTC  
D3  
D4  
D5  
POK_B AGND  
REF  
E5  
E4  
E1  
E2  
E3  
E4  
Figure 3.  
Top View  
Figure 4.  
Bottom View  
Pin Definitions  
Pin #  
A1  
Name  
SDA  
Description  
I2C Interface Serial Data. This pin should not be left floating.  
I2C Interface Serial Clock. This pin should not be left floating.  
B1  
SCL  
Disable. If this pin is held HIGH, Q1 and Q3 are turned off, creating a HIGH Z condition at VBUS and  
the PWM converter is disabled.  
C1  
D1  
DIS  
Status. Open-drain output indicating charge status. The IC pulls this pin LOW when charge is in  
progress; can be used to signal the host processor when a fault condition occurs.  
STAT  
Power OK. Open-drain output that pulls LOW when VBUS is plugged in and the battery has risen  
E1  
POK_B above VLOWV. This signal is used to signal the host processor that it can begin to draw significant  
current.  
Power Ground. Power return for gate drive and power transistors. The connection from this pin to the  
bottom of CMID should be as short as possible.  
A2 D2  
PGND  
E2  
AGND  
SW  
Analog Ground. All IC signals are referenced to this node.  
Switching Node. Connect to output inductor.  
A3 C3  
System Supply. Output voltage of the switching charger and input to the power path controller. Bypass  
SYS to PGND with a 10 μF capacitor.  
D3 E3  
A4 C4  
SYS  
Power Input Voltage. Power input to the charger regulator, bypass point for the input current sense.  
Bypass with a minimum of a 4.7 F, 6.3 V capacitor to PGND.  
PMID  
Battery Voltage. Connect to the positive (+) terminal of the battery pack. Bypass with a 10 F capacitor  
to PGND. VBAT is a power path connection.  
D4 E4  
A5 B5  
VBAT  
VBUS  
Charger Input Voltage and USB-OTG output voltage. Bypass with a 1 F capacitor to PGND.  
External MOSFET Gate. This pin controls the gate of an external P-channel MOSFET transistor used  
to augment the internal ideal diode. The source of the P-channel MOSFET should be connected to SYS  
and the drain should be connected to VBAT.  
C5  
GATE  
Thermistor input. The IC compares this node with taps on a resistor divider from REF to inhibit auto-  
charging when the battery temperature is outside of permitted fast-charge limits.  
D5  
E5  
NTC  
REF  
Reference Voltage. REF is a 1.8 V regulated output.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
3
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable  
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition,  
extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute  
maximum ratings are stress ratings only.  
Symbol  
Parameter  
Min.  
Max.  
Unit  
Continuous  
-0.3  
-1.0  
0.3  
0.3  
0.3  
VBUS  
Voltage on VBUS Pin  
28.0  
V
Pulsed, 100 ms Maximum Non-Repetitive  
Voltage on PMID Voltage Pin  
7.0  
7.0  
6.5(2)  
VI  
V
V
Voltage on SW, SYS, VBAT, STAT, DIS Pins  
Voltage on Other Pins  
VO  
dVBUS  
dt  
Maximum VBUS Slope Above 5.5 V when Boost or Charger Active  
4
V/s  
Human Body Model per JESD22-A114  
Charged Device Model per JESD22-C101  
2000  
500  
15  
Electrostatic Discharge  
Protection Level  
V
ESD  
Air Gap  
Contact  
USB Connector  
Pins (VBUS to GND)  
IEC 61000-4-2 System ESD(3)  
kV  
8
TJ  
TSTG  
Junction Temperature  
Storage Temperature  
40  
65  
+150  
+150  
+260  
°C  
°C  
°C  
TL  
Lead Soldering Temperature, 10 Seconds  
Notes:  
2. Lesser of 6.5 V or VI + 0.3 V.  
3. Guaranteed if CBUS ≥1 µF and CMID ≥ 4.7 µF.  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating  
conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend  
exceeding them or designing to absolute maximum ratings.  
Symbol  
Parameter  
Min.  
Max.  
Unit  
V
VBUS  
Supply Voltage  
4
6
4.5  
4
VBAT(MAX) Maximum Battery Voltage when Boost enabled  
V
TA < 60°C  
TA > 60°C  
dVBUS  
dt  
Negative VBUS Slew Rate during VBUS Short Circuit,  
CMID < 4.7 F, see VBUS Short While Charging  
V/s  
2
TA  
TJ  
Ambient Temperature  
30  
30  
+85  
+120  
°C  
°C  
Junction Temperature (see Register Bit section)  
Thermal Properties  
Junction-to-ambient thermal resistance is a function of application and board layout. This data is measured with four-layer  
2s2p boards in accordance to JEDEC standard JESD51. Special attention must be paid not to exceed junction temperature  
TJ(max) at a given ambient temperature TA.  
Symbol  
Parameter  
Junction-to-Ambient Thermal Resistance  
Junction-to-PCB Thermal Resistance  
Typical  
50  
Unit  
°C/W  
°C/W  
JA  
JB  
20  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
4
 
 
Electrical Specifications  
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;  
VBUS=5.0 V; HZ_MODE=0; OPA_MODE=0(Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min.  
and Max. values are not tested in production, but are determined by characterization.  
Symbol  
Parameter  
Conditions  
Min. Typ. Max. Unit  
Power Supplies  
PWM Switching  
25  
6
mA  
mA  
VBAT > VOREG  
IBUSLIM = 500 mA  
IVBUS  
VBUS Current  
0°C < TJ < 85°C, HZ_MODE = 1,  
VBAT > VLOWV  
190  
280  
10  
A  
A  
Battery Discharge Current in DIS pin HIGH, or HZ_MODE = 1,  
IBAT_HZ  
<1.25  
High-Impedance Mode  
VBAT=4.35 V  
Battery Leakage Current to  
VBUS in High-Impedance  
Mode  
DIS pin HIGH, or HZ_MODE = 1,  
VBUS Shorted to Ground, VBAT=4.35 V  
IBUS_HZ  
-5.0  
-0.2  
A  
Charger Voltage Regulation  
Charge Voltage Range  
3.51  
0.5  
1  
4.45  
+0.5  
+1  
V
%
%
VOREG  
TA = 25°C, VOREG = 4.35 V  
TJ=0 to 125°C  
Charge Voltage Accuracy  
Charging Current Regulation (Fast Charge)  
IO_LEVEL = 0”  
550  
165  
5  
1550  
230  
+5  
mA  
mA  
%
Output Charge Current  
Range  
VLOWV < VBAT  
VOREG  
<
IOCHRG  
IO_LEVEL = 1(default)  
200  
Charge Current Accuracy  
IO_LEVEL = 0”  
Weak Battery Detection  
Weak Battery Threshold  
Range  
3.35  
3.75  
+5  
V
VLOWV  
Weak Battery Threshold  
Accuracy  
5  
%
Weak Battery Deglitch Time Rising Voltage, 2 mV Overdrive  
PWM Charging Threshold  
Rising PWM Charging  
32  
ms  
VBATMIN  
3.1  
3.2  
3.0  
3.3  
V
V
Threshold  
Falling PWM Charging  
Threshold  
VBATFALL  
Logic Levels: DIS, SDA, SCL  
VIH  
VIL  
IIN  
High-Level Input Voltage  
1.05  
V
V
Low-Level Input Voltage  
Input Bias Current  
0.4  
Input Tied to GND or VBUS  
0.01  
1
1.00  
A  
M  
RPD  
DIS Pull-Down Resistance  
Charge Termination Detection  
Termination Current Range  
VBAT > VOREG VRCH, VBUS > VSLP  
ITERM Setting < 100 mA  
50  
15  
5  
400  
+15  
+5  
mA  
%
Termination Current  
Accuracy  
I(TERM)  
ITERM Setting > 200 mA  
Termination Current Deglitch  
Time(4)  
32  
ms  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
5
Electrical Specifications (Continued)  
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;  
VBUS=5.0 V; HZ_MODE=0; OPA_MODE=0(Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min.  
and Max. values are not tested in production, but are determined by characterization.  
Symbol  
Parameter  
Conditions  
Min. Typ. Max. Unit  
Power Path (Q4) Control (Precharge)  
IO_LEVEL = 1(default)  
165  
165  
375  
610  
6  
200  
200  
450  
730  
5  
235  
235  
520  
840  
3  
mA  
mA  
mA  
mA  
mV  
IO_LEVEL = “0”, IBUSLIM < 01”  
Power Path Maximum  
Charge Current  
IPP  
IO_LEVEL = “0”, IBUSLIM > 01”, IOCHARGE < “02”  
IO_LEVEL = “0”, IBUSLIM > 01”, IOCHARGE > “02”  
(SYS-VBAT) Falling  
VBAT to SYS Threshold  
VTHSYS  
for Q4 and Gate Transition  
While Charging  
(SYS-VBAT) Rising  
-1  
+1  
2
mV  
Production Test Mode  
Production Test Output  
Voltage  
(4)  
VBAT(PTM)  
1 mA < IBAT < 2 A, VBUS=5.5 V  
4.116 4.200 4.284  
2.3  
V
A
Production Test Output  
Current  
(4)  
IBAT(PTM)  
20% Duty with Max. Period 10 ms  
Battery Temperature Monitor (NTC)  
T1 (0°C) Temperature  
Threshold  
T1  
71.9  
62.6  
31.9  
21.3  
73.9  
64.6  
32.9  
23.3  
75.9  
66.6  
34.9  
25.3  
T2 (10°C) Temperature  
Threshold  
T2  
% of  
VREF  
T3 (45°C) Temperature  
Threshold  
T3  
T4 (60°C) Temperature  
Threshold  
T4  
Input Power Source Detection  
VIN(MIN)1  
VBUS Input Voltage Rising To Initiate and Pass VBUS Validation  
4.35  
4.45  
3.94  
V
V
Minimum VBUS during  
During Charging  
Charge  
VIN(MIN)2  
3.71  
30  
(4)  
tVBUS_VALID  
VBUS Validation Time  
ms  
VBUS Control Loop  
VBUS Loop Setpoint  
Accuracy  
Input Current Limit  
VBUSLIM  
3  
+3  
%
IBUSLIM = “00”  
IBUSLIM = “01”  
IBUSLIM = “10”  
450  
972  
475  
760  
500  
1188  
Charger Input Current  
Limit Threshold  
IBUSLIM  
mA  
1080  
VREF Bias Generator  
Bias Regulator Voltage  
Short-Circuit Current Limit  
Battery Recharge Threshold  
Recharge Threshold  
Deglitch Time  
STAT, POK_B Output  
VSTAT(OL) STAT Output Low  
VBUS > VIN(MIN)1  
1.8  
2.5  
V
VREF  
mA  
Below VOREG  
100  
120  
130  
150  
mV  
VRCH  
VBAT Falling Below VRCH Threshold  
ms  
ISTAT = 10 mA  
VSTAT = 5 V  
0.4  
1
V  
STAT High Leakage  
Current  
ISTAT(OH)  
A  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
6
Electrical Specifications (Continued)  
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;  
VBUS=5.0 V; HZ_MODE=0; OPA_MODE=0(Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min.  
and Max. values are not tested in production, but are determined by characterization.  
Symbol  
Parameter  
Conditions  
Min. Typ. Max. Unit  
Battery Detection  
Battery Detection Current before  
Charge Done (Sink Current)(5)  
IDETECT  
tDETECT  
1.9  
mA  
ms  
Begins after Termination Detected and  
VBAT < VOREG VRCH  
Battery Detection Time  
262  
Sleep Comparator  
Sleep-Mode Entry Threshold,  
VBUS VBAT  
Power Switches (see Figure 2)  
Q3 On Resistance (VBUS to PMID) IIN(LIMIT) = 500 mA  
VSLP  
2.3 V < VBAT < VOREG, VBUS Falling  
0
0.04  
0.10  
V
180  
130  
150  
70  
400  
225  
225  
100  
Q1 On Resistance (PMID to SW)  
Q2 On Resistance (SW to GND)  
Q4 On Resistance (SYS to VBAT)  
mΩ  
RDS(ON)  
VBAT=4.35 V  
mΩ  
Synchronous to Non-Synchronous  
Current Cut-Off Threshold(6)  
Low-Side MOSFET (Q2) Cycle-by-Cycle  
Current Limit  
ISYNC  
180  
mA  
Charger PWM Modulator  
fSW  
Oscillator Frequency  
2.7  
3.0  
0
3.3 MHz  
DMAX  
DMIN  
Maximum Duty Cycle  
Minimum Duty Cycle  
100  
%
%
Boost Mode Operation (OPA_MODE=1)  
2.5 V < VBAT < 4.5 V, ILOAD from 0 to  
200 mA  
4.80  
4.77  
5.07  
5.07  
5.20  
5.20  
VBOOST  
Boost Output Voltage at VBUS  
V
3.0 V < VBAT < 4.5 V, ILOAD from 0 to  
500 mA  
IBAT(BOOST) Boost Mode Quiescent Current  
PFM Mode, VBAT = 3.6 V, ILOAD = 0 A  
250  
1550  
2.32  
2.48  
350  
A  
ILIMPK(BST)  
Q2 Peak Current Limit  
1350  
1950  
mA  
While Boost Active  
Minimum Battery Voltage for Boost  
Operation  
UVLOBST  
V
To Start Boost Regulator  
2.70  
VBUS Load Resistance  
Normal Operation  
VBUS Validation  
500  
100  
k  
RVBUS  
VBUS to PGND Resistance  
Protection and Timers  
VBUS Over-Voltage Shutdown  
VBUS Rising  
VBUS Falling  
6.09  
1.95  
6.29  
100  
6.49  
2.07  
V
VBUSOVP  
ILIMPK(CHG)  
VSHORT  
ISHORT  
Hysteresis  
mV  
Q1 Cycle-by-Cycle Peak Current  
Limit  
Charge Mode  
VBAT Rising  
3
A  
Battery Short-Circuit Threshold  
Hysteresis  
2.00  
100  
V
mV  
Linear Charging Current  
VBAT < VSHORT  
30  
mA  
Thermal Shutdown Threshold(4)  
Hysteresis(4)  
TJ Rising  
145  
25  
TSHUTDWN  
°C  
TJ Falling  
TCF  
tINT  
Thermal Regulation Threshold(4)  
Charge Current Reduction Begins  
120  
2.1  
°C  
s
Detection Interval  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
7
Electrical Specifications (Continued)  
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;  
VBUS=5.0 V; HZ_MODE; OPA_MODE=0; (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min. and  
Max. values are not tested in production, but are determined by characterization.  
Symbol  
Parameter  
32-Second Timer(7)  
Conditions  
Charger Enabled  
Min. Typ. Max. Unit  
20.5  
18.0  
12.0  
23  
25.2  
25.2  
13.5  
28.0  
34.0  
t32S  
s
Charger Disabled  
15-Minute Mode  
Charger Inactive  
t15MIN  
15-Minute Timer  
15.0 min  
27  
tLF  
Low-Frequency Timer Accuracy  
%
Notes:  
4. Guaranteed by design; not tested in production.  
5. Negative current is current flowing from the battery to VBUS (discharging the battery).  
6. Q2 always turns on for 60 ns, then turns off if current is below ISYNC  
.
7. This tolerance (%) applies to all timers on the IC, including soft-start and deglitching timers.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
8
 
I2C Timing Specifications  
Guaranteed by design.  
Symbol  
Parameter  
Conditions  
Standard Mode  
Min.  
Typ. Max.  
Unit  
100  
400  
1000  
3400  
1700  
4.7  
Fast Mode  
fSCL  
SCL Clock Frequency  
Fast Mode Plus  
kHz  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
BUS-free Time between STOP and  
START Conditions  
tBUF  
Fast Mode  
1.3  
s  
Fast Mode Plus  
0.5  
Standard Mode  
4
s  
ns  
ns  
ns  
s  
s  
s  
ns  
ns  
s  
ns  
ns  
ns  
ns  
s  
ns  
ns  
ns  
Fast Mode  
600  
260  
160  
4.7  
START or Repeated START Hold  
Time  
tHD;STA  
Fast Mode Plus  
High-Speed Mode  
Standard Mode  
Fast Mode  
1.3  
tLOW  
SCL LOW Period  
SCL HIGH Period  
Fast Mode Plus  
0.5  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
160  
320  
4
Fast Mode  
600  
260  
60  
tHIGH  
Fast Mode Plus  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
120  
4.7  
Fast Mode  
600  
260  
160  
250  
100  
50  
tSU;STA  
Repeated START Setup Time  
Data Setup Time  
Fast Mode Plus  
High-Speed Mode  
Standard Mode  
Fast Mode  
tSU;DAT  
ns  
Fast Mode Plus  
High-Speed Mode  
Standard Mode  
10  
0
0
0
0
0
3.45  
900  
450  
70  
s  
ns  
ns  
ns  
ns  
Fast Mode  
tHD;DAT  
Data Hold Time  
SCL Rise Time  
Fast Mode Plus  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
150  
20+0.1CB  
20+0.1CB  
20+0.1CB  
10  
20  
1000  
300  
120  
80  
Fast Mode  
tRCL  
Fast Mode Plus  
ns  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
160  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
9
I2C Timing Specifications (Continued)  
Guaranteed by design.  
Symbol  
Parameter  
Conditions  
Standard Mode  
Min.  
20+0.1CB  
20+0.1CB  
20+0.1CB  
10  
Typ. Max.  
Unit  
300  
300  
120  
40  
Fast Mode  
tFCL  
SCL Fall Time  
Fast Mode Plus  
ns  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
20  
10  
20  
80  
80  
Rise Time of SCL after a Repeated  
START Condition and after ACK Bit  
tRCL1  
ns  
ns  
160  
1000  
300  
120  
80  
20+0.1CB  
Fast Mode  
20+0.1CB  
20+0.1CB  
tRDA  
SDA Rise Time  
SDA Fall Time  
Fast Mode Plus  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
10  
20  
20+0.1CB  
160  
300  
300  
120  
80  
Fast Mode  
20+0.1CB  
20+0.1CB  
tFDA  
Fast Mode Plus  
ns  
High-Speed Mode, CB < 100 pF  
High-Speed Mode, CB < 400 pF  
Standard Mode  
10  
20  
4
160  
s  
ns  
ns  
ns  
pF  
Fast Mode  
600  
120  
160  
tSU;STO  
Stop Condition Setup Time  
Fast Mode Plus  
High-Speed Mode  
CB  
Capacitive Load for SDA and SCL  
400  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
10  
Timing Diagrams  
tF  
tSU;STA  
tBUF  
SDA  
tR  
TSU;DAT  
tHD;STO  
tHIGH  
tHD;DAT  
SCL  
tLOW  
tHD;STA  
tHD;STA  
REPEATED  
START  
START  
STOP  
START  
Figure 5.  
I2C Interface Timing for Fast and Slow Modes  
REPEATED  
START  
STOP  
tFDA  
tRDA  
tSU;DAT  
SDAH  
tSU;STA  
tRCL1  
tFCL  
tHIGH  
tHD;DAT  
note A  
tRCL  
tSU;STO  
SCLH  
tLOW  
tHD;STA  
REPEATED  
START  
= MCS Current Source Pull-up  
= RP Resistor Pull-up  
Note A: First rising edge of SCLH after Repeated Start and after each ACK bit.  
Figure 6.  
I2C Interface Timing for High-Speed Mode  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
11  
Charge Mode Typical Characteristics  
Unless otherwise specified, circuit of Figure 1, VOREG=4.35 V, IOCHARGE=950 mA, VBUS=5.0 V, and TA=25°C.  
800  
700  
600  
500  
400  
300  
200  
100  
1,700  
1,500  
1,300  
1,100  
900  
700  
4.7 VBUS  
5.0 VBUS  
5.5 VBUS  
4.7 VBUS  
5.0 VBUS  
5.5 VBUS  
500  
300  
2.7  
2.9  
3.1  
3.3  
3.5  
3.7  
3.9  
4.1  
4.3  
4.5  
2.7  
2.9  
3.1  
3.3  
3.5  
3.7  
3.9  
4.1  
4.3  
4.5  
Battery Voltage VBAT (V)  
Battery Voltage VBAT (V)  
Figure 7.  
Battery Charge Current vs. VBUS with  
IBUSLIM=500 mA  
Figure 8.  
Battery Charge Current vs. VBUS with  
IBUSLIM=1100 mA  
95  
94  
90  
85  
80  
75  
70  
65  
92  
90  
88  
86  
84  
82  
4.7VBUS, 3.9VBAT  
4.7 VBUS  
5.0 VBUS  
5.5 VBUS  
5.0VBUS, 3.9VBAT  
5.0VBUS, 4.3VBAT  
5.5VBUS, 4.3VBAT  
2.7  
2.9  
3.1  
3.3  
3.5  
3.7  
3.9  
4.1  
4.3  
4.5  
550  
750  
950  
1150  
1350  
1550  
Battery Voltage VBAT (V)  
Battery Charge Current IBAT (mA)  
Figure 10. Efficiency vs. Charging Current,  
IBUSLIM=No Limit  
Figure 9.  
Efficiency vs. VBUS, IBUSLIM=500 mA, ISYS=0  
1,000  
800  
2.00  
1.80  
1.60  
1.40  
1.20  
1.00  
600  
400  
-30C  
+25C  
+85C  
-30C  
+25C  
+85C  
200  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
0
1
2
3
4
5
VBUS Input Voltage (V)  
VREF Load Current (mA)  
Figure 11. HZ Mode VBUS Current vs. Temperature,  
3.7 VBAT  
Figure 12. VREF vs. Load Current, Over-Temperature  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
12  
Charge Mode Typical Characteristics  
Unless otherwise specified, circuit of Figure 1, VOREG=4.35 V, IOCHARGE=950 mA, VBUS=5.0 V, and TA=25°C.  
Figure 13. Charger Startup at VBUS Plug-In, 500 mA  
IBUSLIM, 3.1 VBAT, 50 Ω SYS Load, CE# = 0,  
IO_LVL=1  
Figure 14. Charger Startup at VBUS Plug-In, 1100 mA  
IBUSLIM, 3.6 VBAT, 700 mA SYS Load, CE# = 0,  
IO_LVL=0  
Figure 16. Charger Startup with HZ Bit Reset,  
500 mA IBUSLIM, 950 mA ICHARGE, 50 SYS Load,  
CE# = 0  
Figure 15. Charger Startup at VBUS Plug-In Using  
300 mA Current Limited Source, 500 mA IBUSLIM  
3.1 VBAT, 200 mA SYS Load, CE# = 0, IO_LVL=0  
,
© 2014 Fairchild Semiconductor Corporation  
FAN54053 Rev. 1.4  
www.fairchildsemi.com  
13  
Charge Mode Typical Characteristics  
Unless otherwise specified, circuit of Figure 1, VOREG=4.35 V, IOCHARGE=950 mA, VBUS=5.0 V, and TA=25°C.  
Figure 17. Battery Removal / Insertion while  
Charging, TE=0, 3.9 VBAT, ICHRG=950 mA, IBUSLIM=No  
Limit, 50 Ω SYS Load  
Figure 18. Battery Removal / Insertion when  
Charging, TE=1, 3.9 VBAT, IBUSLIM=No Limit, 50 Ω  
SYS Load  
Figure 19. Charger Enable (CE# = 1 -0) with VBUS  
Applied, IBUSLIM=500 mA, 200 mA SYS Load,  
IO_LVL=0  
Figure 20. No Battery at VBUS Power-Up, 100 Ω SYS  
Load, 1 kΩ VBAT Load  
© 2014 Fairchild Semiconductor Corporation  
FAN54053 Rev. 1.4  
www.fairchildsemi.com  
14  
GSM Typical Characteristics  
A 2.0 A GSM pulse applied at VBAT with 5 µs rise / fall time. Simultaneous to GSM pulse, 50 Ω additional load applied at SYS.  
Figure 21. 2.0 A GSM Pulse Response,  
IBUSLIM=500 mA Control, ICHRG=950 mA, 3.7 VBAT  
OREG=4.35 V  
Figure 22. 2.0 A GSM Pulse Response,  
IBUSLIM=500 mA, ICHRG=950 mA, 3.7 VBAT  
OREG=4.35 V, 200 mA Source Current Limit  
,
,
© 2014 Fairchild Semiconductor Corporation  
FAN54053 Rev. 1.4  
www.fairchildsemi.com  
15  
Boost Mode Typical Characteristics  
Unless otherwise specified, using circuit of Figure 1, VBAT=3.6 V, TA=25°C.  
100  
95  
90  
85  
80  
75  
100  
95  
90  
85  
80  
75  
-10C, 3.6VBAT  
+25C, 3.6VBAT  
+85C, 3.6VBAT  
2.7VBAT  
3.6VBAT  
4.2VBAT  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
VBUS Load Current (mA)  
VBUS Load Current (mA)  
Figure 23. Efficiency vs. IBUS Over VBAT  
Figure 24. Efficiency vs. IBUS Over-Temperature,  
3.6 VBAT  
5.15  
5.10  
5.05  
5.00  
4.95  
4.90  
4.85  
30  
25  
20  
15  
2.7VBAT  
3.6VBAT  
4.2VBAT  
10  
2.7VBAT  
5
3.6VBAT  
4.2VBAT  
0
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
VBUS Load Current (mA)  
VBUS Load Current (mA)  
Figure 25. Regulation vs. IBUS Over VBAT  
Figure 26. Output Ripple vs. IBUS Over VBAT  
350  
10  
-30C  
+25C  
+85C  
300  
250  
200  
150  
100  
8
6
4
2
0
-30C  
+25C  
+85C  
2
2.5  
3
3.5  
4
4.5  
5
2
2.5  
3
3.5  
4
4.5  
5
Battery Voltage, VBAT (V)  
Battery Voltage, VBAT (V)  
Figure 27. Quiescent Current (IQ) vs. VBAT Over-  
Temperature  
Figure 28. Battery Discharge Current vs. VBAT, HZ /  
Sleep Mode  
© 2014 Fairchild Semiconductor Corporation  
FAN54053 Rev. 1.4  
www.fairchildsemi.com  
16  
Boost Mode Typical Characteristics  
Unless otherwise specified, using circuit of Figure 1, VBAT=3.6 V, TA=25°C.  
Figure 29. OTG Startup, 50 Ω Load, 3.6 VBAT  
Figure 30. OTG VBUS Overload Response  
External / Additional 10 µf on VBUS  
Figure 31. Load Transient, 20-200-20 mA IBUS  
,
Figure 32. Line Transient, 50 Ω Load, 3.9-3.3-  
tRISE/FALL=100 ns  
3.9 VBAT, tRISE/FALL=10 µs  
© 2014 Fairchild Semiconductor Corporation  
FAN54053 Rev. 1.4  
www.fairchildsemi.com  
17  
 
Circuit Description / Overview  
When charging batteries with a current-limited input source,  
such as USB, a switching charger’s high efficiency over a  
wide range of output voltages minimizes charging time.  
PWM Controller in Charge Mode  
The IC uses a current-mode PWM controller to regulate the  
output voltage and battery charge currents. The synchronous  
rectifier (Q2) has a negative current limit that turns off Q2 at  
140 mA to prevent current flow from the battery.  
FAN54053 combines a highly integrated synchronous buck  
regulator for charging with a synchronous boost regulator,  
which can supply 5 V to USB On-The-Go (OTG) peripherals.  
The FAN54053 employs synchronous rectification for both  
the charger and boost regulators to maintain high efficiency  
over a wide range of battery voltages and charge states.  
Battery Charging Curve  
If the battery voltage is below VSHORT, a linear current source  
pre-charges the battery until VBAT reaches VSHORT. The PWM  
charging circuit is then started and the battery is charged  
with a constant current if sufficient input power is available.  
The current slew rate is limited to prevent overshoot.  
The FAN54053 has four operating modes:  
1. Charge Mode:  
Charges a single-cell Li-ion or Li-polymer battery.  
During the current regulation phase of charging, IBUSLIM or  
the programmed charging current limits the amount of  
current available to charge the battery and power the  
system.  
2. Boost Mode:  
Provides 5 V power to USB-OTG with an integrated  
synchronous rectification boost regulator, using the  
battery as input.  
During the voltage regulation phase of charging, assuming  
that VOREG is programmed to the cell’s fully charged “float”  
voltage, the current that the battery accepts with the PWM  
regulator limiting its output (sensed at VBAT) to VOREG  
declines.  
3. High-Impedance Mode:  
Both the boost and charging circuits are OFF in this  
mode. Current flow from VBUS to the battery or from the  
battery to VBUS is blocked in this mode. This mode  
consumes very little current from VBUS or the battery.  
VBAT  
VFLOAT  
4. Production Test Mode:  
IBAT  
This mode provides 4.35 V output on VBAT and  
supplies a load current of up to 2.3 A.  
ICHARGE  
IO_LEVEL  
VBATMIN  
Charge Mode and Registers  
ITERM  
Charge Mode  
In Charge Mode, FAN54053 employs six regulation loops:  
VSHORT  
ISHORT  
1. Input Current: Limits the amount of current drawn from  
VBUS. This current is sensed internally and can be  
programmed through the I2C interface.  
ISHORT  
CHARGE  
CONSTANT  
VOLTAGE (CV)  
PRE-  
CONSTANT  
CHARGE CURRENT (CC)  
RE-  
CHARGE  
ICHARGE Current Charging  
2. Charging Current: Limits the maximum charging current.  
This current is sensed using an internal sense  
MOSFET.  
Figure 33. Charge Curve, ICHARGE Not Limited by  
IBUSLIM  
3. VBUS Voltage: This loop is designed to prevent the  
input supply from being dragged below VBUSLIM (typically  
4.5 V) when the input power source is current limited.  
An example of this would be a travel charger. This loop  
cuts back the current when VBUS approaches VBUSLIM,  
allowing the input source to run in current limit.  
The FAN54053 is designed to work with a current-limited  
input source at VBUS as shown below:  
VBAT  
VFLOAT  
ICHARGE  
4. Charge Voltage: The regulator is restricted from  
exceeding this voltage. As the internal battery voltage  
rises, the battery’s internal impedance works in  
conjunction with the charge voltage regulation to  
decrease the amount of current flowing to the battery.  
Battery charging is completed when the current through  
Q4 drops below the ITERM threshold.  
IBA  
T
IO_LEVEL  
VBATMIN  
ITERM  
VSHORT  
ISHORT  
5. Pre-charge: When VBAT is below VBATMIN, Q4 operates  
as a linear current source and modulates its current to  
ensure that the voltage on SYS stays above 3.4 V.  
ISHORT  
CHARGE  
CONSTANT  
VOLTAGE (CV)  
PRE-  
CONSTANT  
CHARGE CURRENT (CC)  
RE-  
CHARGE  
Input Current Limited Charging  
6. Temperature: If the IC’s junction temperature reaches  
120°C, charge current is reduced until the IC’s  
temperature is below 120°C.  
Figure 34. Charge Curve, IBUSLIM Limits ICHARGE  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
18  
The following charging parameters can be programmed by  
the host through I2C:  
PWM charging stops and the PC_ON bit changes back to  
“0”. If the charging current goes above ITERM without first falling  
to PC_IT, the PC_ON bit can be reset by using any of these  
methods: VBAT moving below and above VBATMIN, a VBUS POR,  
or the CE# or HZ_MODE bit cycled. If VBAT falls to VRCH below  
VOREG, the Fast Charge cycle starts again.  
Table 3. Programmable Charging Parameters  
Parameter  
Name  
Register  
Output Voltage Regulation  
Battery Charging Current Limit  
Input Current Limit  
VOREG  
REG2[7:2]  
See ITERM Register Bit Definitions  
IOCHARGE REG4[6:3]  
Weak Battery Voltage (VLOWV  
)
IBUSLIM  
ITERM  
VLOWV  
VBUSLIM  
REG1[7:6]  
REG4[2:0]  
REG1[5:4]  
REG5[2:0]  
The FAN54053 monitors the level of the battery with respect  
to a programmable VLOWV (REG01h<5:4>) threshold (default  
3.7 V). The VLOWV threshold defines the voltage level of the  
battery at which the system is guaranteed to be fully  
operational when only powered by the battery.  
Charge Termination Limit  
Weak Battery Voltage  
VBUS Control  
The POK_B pin pulls LOW once VBAT reaches VLOWV, and  
remains LOW as long as the IC is in Fast Charge. The IC will  
remain in Fast Charge as long as VBAT > 3.0 V.  
Output Voltage Regulation (VOREG  
)
The charger output or “float” voltage can be programmed by  
the OREG (REG02[7:2]) bits from 3.51 V to 4.45 V in 20 mV  
increments. The defauilt setting is 3.55 V.  
See VLOWV Register Bit Definitions  
VBUS Control loop (VBUSLIM  
)
See OREG Register Bit Definitions  
The IC includes a control loop that limits input current in  
case a current-limited source is supplying VBUS  
.
Battery Charging Current Limit (IOCHARGE  
)
The control increases the charging current until either:  
When the IO_LEVEL bit is set (default), the IOCHARGE bits are  
ignored and charge current is set to 200 mA.  
.
.
IBUSLIM or IOCHARGE is reached OR  
VBUS = VBUSLIM  
.
See IOCHARGE Register Bit Definitions  
If VBUS collapses to VBUSLIM, the VBUS loop reduces its  
current to keep VBUS = VBUSLIM. When the VBUS control loop  
is limiting the charge current, the VLIM bit (REG05h[3]) is  
set.  
Input Current Limiting (IBUSLIM  
To minimize charging time without overloading VBUS current  
limitations, the IC’s input current limit can be programmed by  
the IBUSLIM (REG1[7:6]) bits.  
)
See VBUSLIM Register Bit Definitions  
For the FAN54053, no charging occurs automatically at VBUS  
POR, so the input current limit is established by the IBUSLIM  
bits.  
See IBUSLIM Register Bit Definitions  
Charger Operation  
Termination Limit (ITERM  
)
VBUS Plug In and Safety Timer  
Charge current termination can be enabled or disabled using  
the TE (REG01h[3]) bit. By default TE = “0”, therefore,  
termination is disabled and charging does not terminate at  
the programmed ITERM level.  
At VBUS plug in, the TMR_RST (Reg00h[7]) bit must be set  
within 2 seconds of VBUS rising above V(INMIN)1 or all registers,  
except for SAFETY (REG06h), are set to their default  
values. This functionality occurs regardless of the state of  
the CE# and WD_DIS bit. If plug in occurs with the device in  
a HZ or Charge Done state and the TMR_RST bit is not set  
within 2 seconds of VBUS rising above V(INMIN)1, all register,  
except for SAFETY, will reset when the device enters PWM  
Charging or Recharge.  
When TE = “1”, and VBAT reaches VOREG, the charging  
current is reduced, limited by the battery’s ESR and its  
internal cell voltage. When the charge current falls below  
ITERM; PWM charging stops; but the STAT pin remains LOW.  
The STAT pin then goes HIGH and the STAT bits change to  
CHARGE DONE (10), provided the battery and charger are  
still connected. If VBAT falls to VRCH below VOREG, the Fast  
Charge cycle starts again.  
By default, the safety timers do not run in the FAN54053. A  
Watchdog (t32s) timer can be enabled by setting the WD_DIS  
register bit, (REG13h[1]) to “0”. When WD_DIS = “0”,  
charging is controlled by the host with the t32S timer running  
to ensure that the host is alive. Setting the TMR_RST bit  
resets the t32S timer. If the t32S timer times out; all registers,  
except SAFETY, are set to their default values (including  
WD_DIS and CE#), the FAULT bits are set to “110”, and  
STAT is pulsed.  
Post-charging can be enabled to “top-off” the battery to a  
lower termination current threshold than ITERM. The PC_EN  
bit (REG07h[3]) must be set to “1” before the battery  
charging current reaches ITERM. The lower termination  
current is set by the PC_IT (REG07h[2:0] bits. Post-charging  
begins after normal charging is ended (as described above)  
with the PC_ON (REG11h[2]) monitor bit set to “1”.  
During post-charging, the STAT pin is HIGH, indicating that  
the charge current is below the ITERM level. Once the current  
reaches the threshold for post-charging completion (PC_IT),  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
19  
VBUS POR / Non-Compliant Charger Rejection  
Power Path Operation  
256 ms after VBUS is connected, the IC pulses the STAT pin  
and sets the VBUS_CON bit. Before starting to supply  
current, the IC applies a 110 load from VBUS to GND.  
VBUS must remain above VIN(MIN)1 and below VBUSOVP for  
tVBUS_VALID (32 ms) before the IC initiates charging or  
supplies power to SYS.  
As long as VBAT < VBATMIN, Q4 operates as a linear current  
source, (Precharge) with its current (IPP) limited to 200 mA  
when IO_LEVEL (REG05h[5]) is set to its default value of  
1. If IO_LEVEL is set to 0” and IINLIM > “01”, charge current  
is limited to 450 mA when IOCHARGE 750 mA, and 730 mA  
when IOCHARGE > 750 mA. Providing the input current is not  
limited by the IBUSLIM setting or the current available from the  
source, during precharge, the IC regulates SYS to 3.55 V  
and provides the IO_LEVEL limited current to the battery.  
The VBUS validation sequence always occurs before  
significant current is available to be drawn from VBUS (for  
example, after a VBUS OVP fault or a VRCH (recharge  
initiation). tVBUS_VALID ensures that unfiltered 50/60 Hz  
chargers and other non-compliant chargers are rejected.  
System power always has the highest priority when power  
from the buck is limited ensuring SYS does not fall below  
3.4 V. This is managed by folding back the current to charge  
the battery until charge current is reduced to 0 A.  
USB-Friendly Boot Sequence  
The FAN54053 does not automatically initiate charging at  
VBUSPOR. Instead, prior to receiving host commands, the  
buck is enabled to provide power to SYS while Q4 and Q5  
remain off until register bit CE# (REG01[2]) is set to 0”  
through the I2C interface, allowing charging through Q4.  
After VBAT reaches VBATMIN, Q4 closes and is used as a  
current-sense element to limit current (IOCHRG) per the I2C  
register settings. This is accomplished by limiting the PWM  
modulator’s current (Fast Charge). If SYS drops more than  
5 mV (VTHSYS) below VBAT and CE# = 0, Q4 and Q5 are  
turned on (GATE is pulled LOW). If CE# = 1, only Q5 is  
turned on. Once SYS voltage becomes higher than VBAT, Q5  
is turned off and Q4 again serves as the current-sense  
Startup with No Battery  
The FAN54053 has Battery Absent Behavior enabled. At  
VBUS POR with the battery absent, the PWM will run,  
providing 3.55 V to the system from the input source with  
current limited by the default IBUSLIM setting.  
element to limit IOCHRG  
.
If CE# = 1and DIS pin is high or CE# = “1” and HZ_MODE  
= “1” while VBAT > VLOWV, so as to prevent the system from  
crashing, Q4 and Q5 are enabled. Q4 and Q5 are also both  
turned on when the IC enters SLEEP Mode (VBUS < VBAT).  
Startup with a Dead Battery  
At VBUS POR, if VBAT < VSHORT, all registers, including the  
SAFETY register, are reset to their default values and the  
DBAT_B (REG02h[1]) bit is reset. CE# = “1”, so charging is  
disabled.  
POK_B (see Table 4)  
The POK_B pin and POK_B (REG11h[5]) bit are intended to  
provide feedback to the baseband processor that the battery  
is strong enough to allow the device to fully function.  
Whenever the IC is operating in precharge, POK_B is HIGH.  
If the battery’s protection switch is open, the PWM will run,  
providing 3.55 V to the system from the input source with  
current limited by the default IBUSLIM setting. This allows the  
host processor to awaken and establish host control. Once  
this occurs, the host’s low level software can program the  
CE# bit to 0” and a linear current source closes the battery  
protection switch. When VBAT voltage rises above VSHORT and  
sufficient power is available, PWM charging begins and the  
battery is charged through the BATFET, Q4. The IO_LEVEL  
(REG05h[5]) bit is set to “1” by default which limits charge  
current to 200 mA.  
On exiting Precharge, POK_B remains HIGH until VBAT  
>
VLOWV. REG01h[5:4] sets the VLOWV threshold.POK_B pulls  
LOW once VBAT reaches VLOWV, and remains LOW as long  
as the IC is in Fast Charge and the IC will remain in Fast  
Charge as long as VBAT > 3.0 V. If the battery voltage falls  
below 3.0 V the IC enters Precharge. If WD_DIS = 0and  
the T32S expires during charging, the POK_B pin will go high.  
If the battery was above VLOWV and has fallen below the  
level, the POK_B bit can be set to change the state of the  
pin to be high. This setting of the bit and pin can be used to  
With CE# = “1” once VBAT rises above VSHORT, DBAT_B is  
set. With CE# = “0” once VBAT rises above VBATMIN, DBAT_B  
is set.  
signal the system into  
a low-power state, preventing  
excessive loading from the system while attempting to  
recharge a depleted battery.  
The STAT pin pulses any time the POK_B pin changes.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
20  
Table 4. Q4, Q5, POK_B vs. Operating Mode  
Operating Mode  
VBUS  
VBAT  
CE# PWM VSYS  
BUS Disconnected  
Q4  
Q5  
GATE  
POK_B  
< VBAT OR  
< VIN(MIN)2  
OFF  
> VSHORT  
X
OFF < VBAT  
ON  
ON  
LOW  
HIGH  
VBUS Plug in with Battery Protection Switch Open  
1
HIGH  
PWM  
Valid  
Valid  
OPEN  
ON  
ON  
VOREG OFF  
OFF  
OFF  
HIGH  
HIGH  
0
Indeterminate(8)  
30 mA Linear Charging (9)  
< VSHORT  
0
3.55  
OFF  
HIGH  
Charge Mode  
> VSHORT and  
< VBATMIN  
Precharge  
Precharge:  
Valid  
Valid  
0
ON  
3.55 Linear  
< 3.55 Linear  
OFF  
OFF  
HIGH  
HIGH  
HIGH  
HIGH  
ISYS + Ipp > IPWM  
,
< VBATMIN  
0
ON  
IBAT < IPP  
> VBATMIN and  
< VLOWV  
HIGH  
LOW  
Fast Charge  
Precharge  
Valid  
Valid  
Valid  
0
ON  
> VBAT  
ON  
ON  
OFF  
OFF  
HIGH  
HIGH  
> VLOWV  
Battery Voltage Falling from Fast Charge  
VBATFALL ON 3.55  
Battery Supplementing SYS  
0
HIGH  
> VSHORT  
1
ON  
< VBAT  
X
X
ON  
ON  
LOW  
LOW  
X
X
Supplemental Mode :  
ISYS > IPWM  
> VBATMIN and  
> VSYS + VTHSYS  
0
ON  
< VBAT  
Note:  
8. When VBAT is open it can float to VSYS, and POK_B = HIGH when VBAT < VLOWV and POK_B = LOW when VBAT > VLOWV.  
9. 30 mA Linear Charging operating mode assumes the host has programmed CE# = “0” during PWM Operating Mode.  
The state of the MONITOR register bits listed in High-  
Impedance Mode is valid only when VBUS is valid.  
Charger Status / Fault Status  
The STAT pin indicates the operating condition of the IC and  
provides a fault indicator for interrupt driven systems.  
Charge Mode Control Bits  
The CE# (REG01h[2]) bit is set to “1’ by default, therefore,  
charging is disabled.  
Table 5. STAT Pin Function  
EN_STAT  
Charge State  
STAT Pin  
Setting the RESET (REG04h[7]) bit clears all registers  
(except SAFETY). The CE# bit will only be cleared if RESET  
occurs with a valid VBUS and VBAT < VLOWV. If HZ_MODE or  
the WD_DIS bit was set when the RESET bit is set, this bit is  
also cleared. Refer to the Register Bit Definitions section for  
more details.  
0
X
1
X
OPEN  
OPEN  
LOW  
Normal Conditions  
Charging  
128 s Pulse,  
then OPEN  
X
Fault (Charging or Boost)  
The HZ_MODE (REG01h[1]) and DIS pin will put the device  
in High-Impedance Mode. If HZ_MODE = 1” or DIS pin is  
HIGH, so as to prevent the system from crashing, Q4 and  
Q5 are enabled.  
The FAULT bits (REG00h[2:0]) indicate the type of fault in  
Charge Mode.  
Monitor Registers (REG10h, REG11h)  
The functionality of the HZ_MODE (REG01h[1]) bit and DIS  
pin has a dependence upon VBAT voltage level and the  
WD_DIS (REG13h[1]) bit state. Refer to Table 5 for details.  
Additional status monitoring bits enable the host processor  
to have more visibility into the status of the IC. The monitor  
bits are real-time status indicators and are not internally  
debounced or otherwise time qualified.  
© 2014 Fairchild Semiconductor Corporation  
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FAN54053 Rev. 1.4  
21  
 
 
Table 6. DIS Pin, HZ_MODE and WD_DIS bits Operation  
Conditions  
Functionality  
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will disable  
the charger and put the IC into High-Impedance Mode.  
Resetting the HZ_MODE bit or the DIS pin to LOW will allow charging to resume.  
WD_DIS = 1 and VBAT > VLOWV  
While in High-Impedance mode, if VBAT drops below VLOWV, all registers (except  
SAFETY), including HZ_MODE and CE# are reset. Note that charge parameters  
will need to be reprogrammed in order to completely charge the battery.  
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will reset all  
registers (except SAFETY), including HZ_MODE and CE#.  
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will stop the  
t32S timer from advancing (does not reset it), disable the charger, and put the IC  
into High-Impedance Mode.  
WD_DIS = 1 and VBAT < VLOWV  
WD_DIS = 0 and VBAT > VLOWV  
Resetting the HZ_MODE bit or the DIS pin to LOW will allow charging to resume.  
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will disable  
the charger and put the IC into High-Impedance Mode. The T32S timer will  
continue to run. If the T32S timer is allowed to overflow, all registers (except  
SAFETY) are reset, including WD_DIS, HZ_MODE and CE#.  
WD_DIS = 0 and VBAT < VLOWV  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
22  
Flow Charts  
VBUS POR  
CHARGE STATE  
Linear Charging,  
Reset SAFETY reg  
YES  
VBAT < VSHORT  
NO  
YES  
VBAT < VSHORT  
Enable PWM  
NO  
Write TMR_RST  
within 2sec ?  
Reset all registers,  
except SAFETY  
NO  
FIRST TIME?  
YES  
NO  
Enable PWM  
YES  
CE# = 1  
NO  
Enable Linear  
Charge and Q5  
YES  
Disable Q5 &  
Linear Charge  
IDLE State  
NO  
CE# = 1  
NO  
VBAT < VBATMIN  
YES  
Enable Fast  
charge  
IDLE State  
YES  
Protection  
switch closed?  
YES  
Enable Precharge  
charging  
NO  
Battery  
Present ?  
IOUT < ITERM  
and TE = 1  
YES  
NO  
Indicate Charge  
Complete  
NO  
YES  
Set NOBAT bit  
PWM ON  
Q4 and Q5 OFF  
Reset charge  
parameters &  
SAFETY reg  
VBAT  
<
NO  
VOREG VRCH  
?
VBUS OK ?  
NO  
YES  
Disable PWM for  
2 seconds  
EOC = 1  
NO  
YES  
YES  
Note: Reset Charge Parameters is a condition  
that results in the SAFETY, OREG, IOCHARGE,  
IBUSLIM, ITERM, and VLOWV register bits  
resetting. It does not reset the IO_Level, EOC,  
and TE register bits.  
Indicate  
VBUS Fault  
Figure 35. Charge State Flow Chart  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
23  
Standby  
State  
PWM = OFF  
Q4, Q5 = ON  
A Register  
Written?  
NO  
YES  
HZ or  
DISABLE Pin  
set?  
Charge State  
NO  
YES  
HZ STATE  
Figure 36. Standby State  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
24  
10. If IOCHARGE is programmed to less than 650 mA, the  
charge current is limited to 340 mA.  
Non-Charging States  
Sleep Mode  
When VBUS falls below VBAT + VSLP and VBUS is above  
VIN(MIN)2, the IC enters Sleep Mode to prevent the battery  
from draining into VBUS. During Sleep Mode, reverse  
current is disabled by body switching Q1.  
Thermistors with other values can be used, with some shift  
in the corresponding temperature threshold, as shown in  
Table 9.  
Table 9. Thermistor Temperature Thresholds  
RREF = RTHRM at 25°C.  
Idle State  
Parameter  
Various Thermistors  
The Idle State is related to the condition of the battery.  
During Idle mode the Switch Mode Power Supply (SMPS) is  
operating, but the battery is not being charged for one or  
more of the following conditions exists: the Safety Timer  
expires, charging is complete, or the BATFET is disabled by  
the Charge Enable bit, CE# = 1.  
RTHRM(25°C)  
10 kΩ  
3380  
0°C  
10 kΩ  
3940  
3°C  
47 kΩ  
4050  
6
100 kΩ  
4250  
8
T1  
T2  
T3  
T4  
10°C  
45°C  
60°C  
12°C  
42°C  
55°C  
13  
14  
The PWM Buck continues to supply power to the system, but  
the Battery is no longer being charged and the BATFET is  
disabled.  
41  
40  
53  
51  
Standby State  
The host processor can disable temperature-driven control  
of charging parameters by writing “1” to the TEMP_DIS bit.  
Since TEMP_DIS is reset whenever the IC resets its  
registers, the temperature controls are enforced whenever  
the IC is auto-charging, since auto-charge is always  
preceeded by a reset of registers.  
The Standby State is an intermediate state where the switch  
mode supply is off due to either bad input power, the device  
has been put in High-Impedance Mode, or the die  
temperature is too hot.  
To disable the thermistor circuit, tie the NTC pin to GND.  
Before enabling the charger, the IC tests to see if NTC is  
shorted to GND. If NTC is shorted to GND, no thermistor  
readings occur and the NTC_OK and NTC1-NTC4 is reset.  
Charger Protection  
Battery Temperature (NTC) Monitor  
The FAN54053 reduces the maximum charge current and  
termination voltage if an NTC measuring battery temperature  
(TBAT) indicates that it is outside the fast-charging limits (T2  
to T3), as described in the JEITA specification1. There are  
four temperature thresholds that change battery charger  
operation: T1, T2, T3, and T4, shown in Table 7.  
The IC first measures the NTC immediately prior to entering  
any PWM charging state, then measures the NTC once per  
second, updating the result in NTC1-NTC4 bits (REG  
12h[3:0]).  
Table 10. NTC1-NTC4 Decoding  
TBAT (°C)  
Above T4  
NTC4 NTC3 NTC2 NTC1  
Table 7. Battery Temperature Thresholds  
1
0
0
0
0
1
1
0
0
0
1
1
1
0
0
1
1
1
1
0
For use with 10 kΩ NTC, = 3380, and RREF = 10 kΩ.  
Between T3 and T4  
Between T2 and T3  
Between T1 and T2  
Below T1  
Threshold  
Temperature  
0°C  
% of VREF  
73.9  
T1  
T2  
T3  
T4  
10°C  
64.6  
45°C  
32.9  
60°C  
23.3  
Safety Register Settings  
The IC contains a SAFETY register (REG06h) that prevents  
the values in OREG (REG02h[7:2]) and IOCHARGE  
(REG04h[7:4]) from exceeding the values of VSAFE  
(REG06h[3:0]) and ISAFE (REG06h[7:4]) in the SAFETY  
register.  
Table 8. Charge Parameters vs. TBAT  
TBAT (°C)  
Below T1  
ICHARGE  
VFLOAT  
Charging to VBAT Disabled  
Between T1 and T2  
Between T2 and T3  
Between T3 and T4  
Above T4  
IOCHARGE / 2(10)  
4.0 V  
VOREG  
4.0 V  
After VBAT rises above VSHORT, the SAFETY register is  
loaded with its default value and may be written to only  
before writing to any other register. The same 8-bit value  
should be written to the SAFETY register twice to set the  
register value. After writing to any other register, the  
IOCHARGE  
IOCHARGE / 2(10)  
Charging to VBAT Disabled  
Note:  
SAFETY register is locked until VBAT falls below VSHORT  
.
If the host attempts to write a value higher than VSAFE or  
ISAFE to OREG or IOCHARGE, respectively; the VSAFE,  
ISAFE value appears as the OREG, IOCHARGE register value,  
respectively.  
1
Japan Electronics and Information Technology Industries  
Association (JEITA) and Battery Association of Japan. A Guide to  
the Safe Use of Secondary Lithium Ion Batteries in Notebook-type  
Personal Computers,” April 28, 2007.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
25  
 
 
 
 
The Safety register is reset when the battery is below 3.0 V  
and power is removed from the VBUS if CE# = 1. The  
Safety register can be re-written to if it is the first I2C write  
anytime after the VBUS removal.  
Charge Mode Battery Detection & Protection  
VBAT Over-Voltage Protection  
The OREG voltage regulation loop prevents VBAT from  
overshooting VOREG by more than 50 mV when the battery is  
removed. When the PWM charger runs with no battery, the  
TE bit is not set and a battery is inserted that is charged to a  
voltage higher than VOREG; PWM pulses stop. If no further  
pulses occur for 30 ms, the IC sets the FAULT bits to 100,  
sets the STAT bits to 11, and pulses the STAT pin  
See VSAFE and ISAFE Register Bit Definitions  
Thermal Regulation and Shutdown  
When the IC’s junction temperature reaches TCF (about  
120°C), the charger reduces its output current to 550 mA to  
prevent overheating. If the temperature increases beyond  
TSHUTDOWN; charging is suspended, the FAULT bits are set to  
101, and STAT is pulsed high. In Suspend Mode, all timers  
stop and the state of the IC’s logic is preserved. Charging  
resumes at programmed current after the die cools to about  
120°C.  
Battery Detection during Charging  
The IC can detect the presence, absence, or removal of a  
battery if the termination bit (TE) is set to “1” and CE# = 0.  
During normal charging, once VBAT is close to VOREG and the  
charge current falls below ITERM; the PWM charger continues  
to provide power to SYS and Q4 is turned off. It then turns  
on a discharge current, IDETECT, for tDETECT. If VBAT is still above  
VOREG VRCH, the battery is present and the IC sets the STAT  
bits to 10(Charge Done). If VBAT is below VOREG VRCH, the  
battery is absent and the IC:  
Note that as power dissipation increases, the effective JA  
decreases due to the larger difference between the die  
temperature and ambient.  
Charge Mode Input Supply Protection  
Input Supply Low-Voltage Detection  
1. Sets the charging parameters to their default values.  
The IC continuously monitors VBUS during charging. If VBUS  
falls below VIN(MIN)2, the IC:  
2. Sets the FAULT bits to 111(Battery Absent) and sets  
the NOBAT bit.  
1. Terminates charging  
3. If EOC = 0, the IC turns off the PWM for tINT, then  
resumes charging and retries Battery Detection. If the  
battery is still absent, the process repeats with the “No  
Battery” fault re-enunciated.  
2. Pulses the STAT pin, sets the STAT bits to 11, and  
sets the FAULT bits to 011.  
If VBUS recovers above the VIN(MIN)1 rising threshold after time  
tINT (about two seconds), the charging process is repeated.  
This function prevents the USB power bus from collapsing or  
oscillating when the IC is connected to a suspended USB  
port or a low-current-capable OTG device.  
4. If EOC = 1, the PWM remains on to provide power to  
SYS, but charge termination and the battery absent test  
are performed every tINT  
.
Linear Charging  
Input Over-Voltage Detection  
If the battery voltage is below the short-circuit threshold  
(VSHORT); a linear current source, ISHORT, charges VBAT until  
When the VBUS exceeds VBUSOVP, the IC:  
VBAT > VSHORT  
.
1. Turns off Q3  
2. Suspends charging  
3. Sets the FAULT bits to 001, sets the STAT bits to  
11, and pulses the STAT pin.  
Production Test Mode (PTM)  
PTM provides 4.20 V at up to 2.3 A to VBAT when VBUS  
5.5 V ±5%.  
=
When VBUS falls about 100 mV below VBUSOVP, the fault  
is cleared and charging resumes after VBUS is revalidated.  
The IC enters PTM when the PROD (REG05h[6]) bit is set  
after the NOBAT (REG11h[3]) bit has been set. The NOBAT  
bit indicates that the IC has detected battery absence. A  
battery absence detection test is performed automatically at  
current termination. The steps for entering PTM should  
include: set the TE (REG01h[3]) bit high, set the CE#  
(REG01h[2]) bit low, wait for the NOBAT bit to set HIGH,  
then set the PROD bit to 1to enter PTM. Battery absence  
detection is completed within 500 ms from the time that CE#  
is set.  
SYS Short During Discharge / Supplemental Mode  
Caution should be taken to ensure the SYS pin is not  
shorted when connected to a battery. This condition can  
induce high current flow through the BATFET (Q4) and the  
external FET (Q5) until the battery’s own safety circuit trips.  
The resulting high current can damage the IC.  
VBUS Short While Charging  
If VBUS is shorted with a very low impedance while the IC is  
charging with IBUSLIM = 100 mA, the IC may not meet  
datasheet specifications until power is removed. To trigger  
this condition, VBUS must be driven from 5 V to GND with a  
high slew rate. Achieving this slew rate requires a 0 short  
to the USB cable less than 10 cm from the connector.  
In PTM, the GATE bit (REG11h[7]) is LOW, Q5 is on, and all  
auxiliary control loops are disabled. Only the OREG loop is  
active, which controls VBAT to 4.20 V, regardless of the  
OREG register setting. Thermal shutdown remains active.  
During PTM, high current pulses (load currents greater than  
1.5 A) must be limited to 20% duty cycle with a minimum  
period of 10 ms.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
26  
PFM Mode  
Boost Mode  
If VBUS > VREFBOOST (nominally 5.07 V) when the minimum  
off-time ends, the regulator enters PFM Mode. Boost pulses  
are inhibited until VBUS < VREFBOOST. The minimum on-time  
is increased to enable the output to pump up sufficiently with  
each PFM boost pulse. Therefore, the regulator behaves like  
a constant on-time regulator, with the bottom of its output  
voltage ripple at 5.07 V in PFM Mode.  
Boost Mode can be enabled if the IC is in 32-Second Mode  
by setting the OPA_MODE REG01h[0]) bit HIGH and  
clearing the HZ_MODE bit.  
Table 11. Enabling Boost  
HZ_MODE  
OPA_MODE  
BOOST  
Enabled  
Disabled  
Disabled  
0
1
X
1
X
0
Table 12. Boost PWM Operating States  
Mode  
Description  
Invoked When  
LIN  
SS  
Linear Startup  
VBAT > VBUS  
VBUS < VBST  
To remain in Boost Mode, the TMR_RST must be set by the  
host before the t32S timer times out. If t32S times out in Boost  
Mode; the IC resets all registers, pulses the STAT pin, sets  
the FAULT bits to 110, and resets the BOOST bit. VBUS  
POR or reading R0 clears the fault condition.  
Boost Soft-Start  
VBAT > UVLOBST and  
SS Completed  
BST  
Boost Operating Mode  
Startup  
Boost PWM Control  
When the boost regulator is shut down, current flow is  
prevented from VBAT to VBUS, as well as reverse flow from  
VBUS to VBAT.  
The IC uses a minimum on-time and computed minimum off-  
time to regulate VBUS. The regulator achieves excellent  
transient response by employing current-mode modulation.  
This technique causes the regulator to exhibit a load line.  
During fast charging, the output voltage drops slightly as the  
input current rises. With a constant VBAT, this appears as a  
constant output resistance.  
LIN State  
When EN rises, if VBAT > UVLOBST; the regulator first  
attempts to bring PMID within 400 mV of VBAT using an  
internal 450 mA current limited source from VBAT (LIN State).  
If PMID has not achieved VBAT 400 mV after 560 s, a fault  
state is initiated.  
The “droop” caused by the output resistance when a load is  
applied allows the regulator to respond smoothly to load  
transients with no undershoot from the load line. This can be  
seen in Figure 31 and Figure 37.  
SS State  
When PMID > VBAT 400 mV, the boost regulator begins  
switching with a reduced peak current limit of about 50% of  
its normal current limit. The output slews up until VBUS is  
within 5% of its setpoint; at which time, the regulation loop is  
closed and the current limit is set to 100%.  
400  
360  
320  
280  
240  
200  
If the output fails to achieve 95% of its setpoint (VBST) within  
128 s, the current limit is increased to 100%. If the output  
fails to achieve 95% of its setpoint after this second 384 s  
period, a fault state is initiated.  
BST State  
This is the normal operating mode of the regulator. The  
regulator uses a minimum tOFF-minimum tON modulation  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
V
IN  
scheme. The minimum tOFF is proportional to  
, which  
Battery Voltage, VBAT (V)  
V
OUT  
Figure 37. Output Resistance (ROUT  
)
keeps the regulator’s switching frequency reasonably  
constant in CCM. tON(MIN) is proportional to VBAT and is a  
higher value if the inductor current reached 0 before tOFF(MIN)  
in the prior cycle.  
VBUS as a function of ILOAD can be computed when the  
regulator is in PWM Mode (continuous conduction) as:  
VOUT 5.07 ROUT ILOAD  
EQ. 1  
To ensure VBUS does not overshoot the regulation point, the  
boost switch remains off as long as VFB > VREF(BST)  
.
At VBAT=3.0 V and ILOAD=300 mA, VBUS drops to:  
Boost Faults  
VOUT 5.07 0.300.3 4.98V  
EQ. 2  
EQ. 3  
If a BOOST fault occurs:  
1. The STAT pin pulses.  
2. OPA_MODE bit is reset.  
At VBAT=3.6 V and ILOAD=500 mA, VBUS drops to:  
VOUT 5.07 0.240.5 4.95V  
3. The power stage is in High-Impedance Mode.  
4. The FAULT bits (REG0[2:0]) are set per Table 13.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
27  
 
 
Restart After Boost Faults  
Data change allowed  
OPA_MODE is reset on boost faults. Boost Mode can only  
be re-enabled by setting the OPA_MODE bit.  
SDA  
SCL  
Table 13. Fault Bits During Boost Mode  
Fault Bit  
tH  
Fault (REG00h[2:0]) Description  
B2 B1 B0  
tSU  
0
0
0
0
0
1
Normal (no fault)  
VBUS > VBUSOVP  
Figure 38. Data Transfer Timing  
VBUS fails to achieve the voltage required to  
advance to the next state during soft-start  
or sustained (>50 s) current limit during the  
BST state.  
Each bus transaction begins and ends with SDA and SCL  
HIGH. A transaction begins with a START condition, which is  
defined as SDA transitioning from 1 to 0 with SCL HIGH, as  
shown in Figure 39.  
0
1
0
0
1
1
1
1
1
0
0
1
1
1
0
1
0
1
VBAT < UVLOBST  
tHD;STA  
Slave Address  
MS Bit  
NA: This code does not appear.  
Thermal shutdown  
SDA  
SCL  
Timer fault; all registers reset.  
NA: This code does not appear.  
Figure 39. Start Bit  
Transactions end with a STOP condition, which is SDA  
I2C Interface  
transitioning from 0 to 1 with SCL HIGH, as shown in Figure  
40.  
The FAN54053’s serial interface is compatible with  
Standard, Fast, Fast Plus, and High-Speed Mode I2C bus  
specifications. The FAN54053 SCL line is an input and the  
SDA line is a bi-directional open-drain output; it can only pull  
down the bus when active. The SDA line only pulls LOW  
during data reads and when signaling ACK. All data is  
shifted in MSB (bit 7) first.  
Slave Releases  
Master Drives  
tHD;STO  
ACK(0) or  
NACK(1)  
SDA  
SCL  
Slave Address  
Table 14. I2C Slave Address Byte  
Figure 40. Stop Bit  
During a read from the FAN54053 Figure 43 the master  
issues a Repeated Start after sending the register address  
and before resending the slave address. The Repeated Start  
is a 1-to-0 transition on SDA while SCL is HIGH, as shown in  
Figure 41.  
7
6
5
4
3
2
1
0
1
1
0
1
0
1
1
R/W  
In hex notation, the slave address assumes a 0 LSB. The  
hex slave address is D6h for all parts in the family. Other  
slave addresses can be accommodated upon request.  
Contact a Fairchild Semiconductor representative.  
Bus Timing  
Shown in Figure 38, data is normally transferred when SCL  
is LOW. Data is clocked in on the rising edge of SCL.  
Typically, data transitions shortly at or after the falling edge  
of SCL to allow ample time for the data to set up before the  
next SCL rising edge.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
28  
 
 
 
 
High-Speed (HS) Mode  
Read and Write Transactions  
The protocols for High-Speed (HS), Low-Speed (LS), and  
Fast-Speed (FS) Modes are identical except the bus speed  
for HS Mode is 3.4 MHz. HS Mode is entered when the bus  
master sends the HS master code 00001XXX after a start  
condition. The master code is sent in Fast or Fast Plus Mode  
(less than 1 MHz clock); slaves do not ACK the  
transmission.  
The figures below outline the sequences for data read and  
write. Bus control is signified by the shading of the packet,  
Master Drives Bus  
All addresses and data are MSB first.  
Table 15. Bit Definitions for Figure 42- Figure 45  
Slave Drives Bus  
defined as  
and  
.
Symbol  
Definition  
START, see Figure 39  
The master then generates a repeated start condition that  
causes all slaves on the bus to switch to HS Mode. The  
master then sends I2C packets, as described above, using  
the HS Mode clock rate and timing.  
S
ACK. The slave drives SDA to 0 to acknowledge  
the preceding packet.  
A
A
The bus remains in HS Mode until a stop bit is sent by the  
master. While in HS Mode, packets are separated by  
repeated start conditions Figure 41.  
NACK. The slave sends a 1 to NACK the  
preceding packet.  
R
P
Repeated START, see Figure 41  
STOP, see Figure 40  
Slave Releases  
tSU;STA  
tHD;STA  
ACK(0) or  
NACK(1)  
SLADDR  
MS Bit  
SDA  
SCL  
Multi-Byte (Sequential) Read and Write  
Transactions  
Sequential Write  
Figure 41. Repeated Start Timing  
The Slave Address, Reg Addr address, and the first data  
byte are transmitted to the FAN54053 in the same way as in  
a byte write Figure 42. However, instead of generating a  
Stop condition, the master transmits additional bytes that are  
written to consecutive sequential registers after the falling  
edge of the eighth bit. After the last byte written and its ACK  
bit received, the master issues a STOP bit. The IC contains  
an 8-bit counter that increments the address pointer after  
each byte is written.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
29  
 
condition. This directs the slave’s I2C logic to transmit the  
next sequentially addressed 8-bit word. The FAN54053  
contains an 8-bit counter that increments the address pointer  
after each byte is read, which allows the entire memory  
contents to be read during one I2C transaction.  
Sequential Read  
Sequential reads are initiated in the same way as a single-  
byte read , except that once the slave transmits the first data  
byte, the master issues an acknowledge instead of a STOP  
Figure 42. Single-Byte Write Transaction  
Figure 43. Single-Byte Read Transaction  
Figure 44. Multi-Byte (Sequential) Write Transaction  
Figure 45.  
Multi-Byte (Sequential) Read Transaction  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
30  
Register Descriptions  
The Twelve user-accessible IC registers are defined in Table 17.  
Table 16. I2C Register Map  
Register  
BIT NAME  
Name  
REG#  
7
6
5
4
3
2
1
0
CONTROL0  
CONTROL1  
OREG  
0H  
1H  
2H  
3H  
4H  
TMR_RST  
EN_STAT  
STAT  
BOOST  
TE  
FAULT  
HZ_MODE  
DBAT_B  
IBUSLIM  
VLOWV  
CE#  
OPA_MODE  
EOC  
OREG  
IC_INFO  
IBAT  
Vendor Code  
RESET  
PN  
IOCHARGE  
REVISION  
ITERM  
VBUS_  
CONTROL  
5H  
6H  
Reserved  
PROD  
IO_LEVEL VBUS_CON  
SP  
VBUSLIM  
SAFETY  
ISAFE  
Reserved  
VSAFE  
POST_  
CHARGING  
7H  
Reserved  
VBUS_LOAD  
PC_EN  
PC_IT  
MONITOR0  
MONITOR1  
NTC  
10H ITERM_CMP VBAT_CMP  
LINCHG  
POK_B  
T_120  
DIS_LEVEL  
NTC_OK  
Reserved  
ICHG  
NOBAT  
NTC4  
IBUS  
PC_ON  
NTC3  
VBUS_VALID  
Reserved  
NTC2  
CV  
11H  
12H  
GATE  
Reserved  
VBAT  
Reserved  
NTC1  
TEMP_DIS  
Reserved  
WD_CONTROL 13H  
RESTART FA  
Reserved  
Reserved  
Reserved EN_REG  
WD_DIS  
Reserved  
RESTART  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
31  
Table 17. Register Bit Definitions  
This table defines the operation of each register bit. Default values are in bold text.  
Bit  
Name  
Value Type  
Description  
Register Address: 00h(0) Default Value=0100 0000 (40h)  
CONTROL0  
Writing a 1 resets the t32S timer; writing a 0 has no effect.  
Reading this bit always returns 0  
0
7
6
TMR_RST  
W
Prevents STAT pin from going LOW during charging; STAT pin still pulses to  
enunciate faults  
0
R/W  
EN_STAT  
1
Enables STAT pin to be LOW when IC is charging  
Bit  
STAT Description  
5
0
0
1
1
4
0
1
0
1
Standby  
00  
5:4  
3
STAT  
R
R
PWM enabled. Charging is occurring if CE# = 0  
Charge Done  
Fault  
0
IC is not in Boost Mode  
IC is in Boost Mode  
Fault Bit  
BOOST  
1
Type  
FAULT Description  
2
1
0
0
0
0
R
R
Normal (No Fault)  
VBUS OVP  
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
RC Sleep Mode  
See  
table  
to the  
right.  
R
R
R
Poor Input Source  
000  
2:0  
FAULT  
Battery OVP  
Thermal Shutdown  
RC Timer Fault  
RC No Battery  
For Boost Mode faults, see Table 13.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
32  
Bit  
Name  
Value Type  
Description  
Default Value=0011 0100 (34h)  
CONTROL1  
Register Address: 01h(1)  
Input current limit  
Bit  
IBUSLIM (mA)  
7
0
0
1
1
6
0
1
0
1
00  
11  
7:6  
5:4  
IBUSLIM  
R/W  
R/W  
475  
760  
1080  
No Limit  
Weak battery voltage threshold  
Bit  
VLOWV (V)  
5
0
0
1
1
4
0
1
0
1
VLOWV  
3.4  
3.5  
3.6  
3.7  
0
1
3
2
TE  
R/W Setting the TE bit to a 1 will enable Charge Termination.  
This is an active low bit and by setting the bit to a “0” will enable Charging. When  
CE#  
R/W  
the bit is reset, it will return to the “1” state and charging will be disabled.  
Setting this bit to a “1” puts the device in  
High Impendance mode.  
0
0
1
0
HZ_MODE  
R/W  
See Table 11  
The device is in Charge Mode when the  
R/W OPA_MODE bit = 0 and in Boost Operation  
when the bit = 1.  
OPA_MODE  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
33  
Bit  
Name  
Value Type  
Description  
Default Value=0000 1000 (08h)  
OREG  
Register Address: 02h(2)  
Charger output “float” voltage; programmable from 3.51 to 4.45 V in 20 mV  
increments.  
Dec  
0
1
2
3
4
5
6
7
Hex  
00  
01  
02  
03  
04  
05  
06  
07  
08  
09  
0A  
0B  
0C  
0D  
0E  
0F  
VOREG  
3.51  
3.53  
3.55  
3.57  
3.59  
3.61  
3.63  
3.65  
3.67  
3.69  
3.71  
3.73  
3.75  
3.77  
3.79  
3.81  
Dec  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
Hex  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
1A  
1B  
1C  
1D  
1E  
1F  
VOREG  
3.83  
3.85  
3.87  
3.89  
3.91  
3.93  
3.95  
3.97  
3.99  
4.01  
4.03  
4.05  
4.07  
4.09  
4.11  
4.13  
Dec  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
Hex  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
2A  
2B  
2C  
2D  
2E  
VOREG  
4.15  
4.17  
4.19  
4.21  
4.23  
4.25  
4.27  
4.29  
4.31  
4.33  
4.35  
4.37  
4.39  
4.41  
4.43  
000010  
7:2  
OREG  
R/W  
8
9
10  
11  
12  
13  
14  
15  
47-63 2F-3F 4.45  
Indicates that the IC detected a dead battery after VBUS_POR. Writing a 0 to this  
bit is ignored.  
0
R/W  
R/W  
The IC sets this bit to 1 if a dead battery (VBAT < VSHORT) was not detected at  
VBUS_POR.  
1
DBAT_B  
1
If the host sets this bit while the IC is charging the battery and DBAT_B is LOW,  
normal Precharge or Fast charging proceeds.  
If TE = ”1”, and no battery is detected at ITERM, the IC turns off the PWM for TINT  
,
then resumes charging and retries Battery Detection. If the battery is still absent,  
the process repeats with the “No Battery” fault re-enunciated, and sets the charging  
parameters to the default values (see Charge State Flow Chart)  
0
0
EOC  
If no battery is detected when a full battery (end of charge) is reached, the PWM  
charger stays on, allowing the host processor to continue to run with no battery.  
1
IC_INFO  
Register Address: 03h(3)  
Default Value=1001 0XXX (9Xh)  
10  
7:6  
5:3  
2:0  
Vendor Code  
PN  
R
R
R
Identifies Fairchild Semiconductor as the IC supplier  
Part number bits, see the Ordering Information  
010  
REV  
IC Revision, revision 1.X, where X is the decimal of these three bits  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
34  
Bit  
Name  
Value Type  
Description  
Default Value=1000 0001 (81h)  
IBAT  
Register Address: 04h(4)  
Conditions  
Functionality  
Setting the RESET bit clears all registers (except  
Valid VBUS, VBAT > VLOWV SAFETY and CE#) including WD_DIS and  
HZ_MODE.  
Setting the RESET bit clears all registers (except  
SAFETY) including WD_DIS, HZ_MODE and CE#.  
7
RESET  
1
W
Valid VBUS, VBAT < VLOWV  
Setting the RESET bit clears all registers (except  
Absent VBUS  
SAFETY and CE#) including WD_DIS and  
HZ_MODE.  
Writing a 0 has no effect; read returns 1  
Programs the maximum charge current (550 mA default)  
Bit  
IOCHARGE (mA)  
6
0
0
0
0
0
0
0
0
1
1
5
0
0
0
0
1
1
1
1
0
0
4
0
0
1
1
0
0
1
1
0
0
3
0
1
0
1
0
1
0
1
0
1
550  
650  
750  
850  
950  
1,050  
1,150  
1,250  
1,350  
1,450  
1,550  
0000  
6:3  
IOCHARGE  
R/W  
1010-1111  
Sets the current used for charging termination  
Bit  
ITERM (mA)  
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
50  
100  
150  
200  
250  
300  
350  
400  
001  
2:0  
ITERM  
R/W  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
35  
Bit  
Name  
Value Type  
Description  
Default Value=001X X100  
VBUS_CONTROL  
Register Address: 05h(5)  
0
0
1
7
6
Reserved  
PROD  
R
This bit always returns 0  
R/W Charger operates in Normal Mode.  
Charger operates in Production Test Mode.  
Battery current is controlled by IOCHARGE and IBUSLIM bits while Fast Charging. During  
Precharge Mode, battery current is limited to 450 mA when IOCHARGE < 750 mA and  
730 mA when IOCHARGE > 750 mA. IBUSLIM bits must be set to “10” or “11” or  
IO_LEVEL current will remain at 200 mA.  
0
R/W  
5
IO_LEVEL  
1
Battery current control is set to 200 mA for Fast Charge and Precharge Mode.  
1 Indicates that VBUS is above 4.4 V (rising) or 3.8 V (falling). When VBUS_CON  
changes from 0 to 1, a STAT pulse occurs.  
4
3
VBUS_CON  
VLIM  
R
R
0
1
VBUS control loop is not active (VBUS is able to stay above VBUSLIM  
)
VBUS control loop is active and VBUS is being regulated to VBUSLIM  
VBUS control voltage reference  
Bit  
VBUSLIM (V)  
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
4.213  
4.293  
4.373  
4.453  
4.533  
4.613  
4.693  
4.773  
100  
2:0  
VBUSLIM  
R/W  
SAFETY  
Register Address: 06h(6)  
Default Value=0100 0000 (4Ah)  
Sets the maximum IOCHARGE value used by the control circuit  
Bit  
IOCHARGE(MAX) (mA)  
7
0
0
0
0
0
0
0
0
1
1
6
0
0
0
0
1
1
1
1
0
0
5
0
0
1
1
0
0
1
1
0
0
4
0
1
0
1
0
1
0
1
0
1
550  
650  
750  
850  
950  
1,050  
1,050  
1,250  
1,350  
1,450  
1,550  
0110  
7:4  
ISAFE  
R/W  
1010-1111  
Sets the maximum VOREG used by the control circuit  
Bit  
VOREG(MAX) (V)  
3
0
0
0
0
0
0
0
0
1
1
1
1
2
0
0
0
0
1
1
1
1
0
0
0
0
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
4.21  
4.23  
4.25  
4.27  
4.29  
4.31  
4.33  
4.35  
4.37  
4.39  
4.41  
4.43  
4.45  
1010  
3:0  
VSAFE  
R/W  
1100-1111  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
36  
Bit  
POST_CHARGING  
7:6 Reserved  
Name  
Value Type  
Description  
Default Value=0000 0001 (01h)  
Register Address: 07h(7)  
00  
R
These bits always return 0  
After charger termination, in the charge done state, these bits control VBUS loading  
to improve detection of AC power removal from the AC adapter.  
[5:4]  
00  
VBUS Loading in Charge Done State:  
00  
5:4 VBUS_LOAD  
R/W  
None  
Load VBUS for 4 ms every two seconds  
Load VBUS for 131 ms every two seconds  
Load VBUS for 135 ms every two seconds  
01  
10  
11  
0
R/W Post charging or background charging feature is disabled  
Post charging or background charging feature is enabled  
Sets the termination current for post charging  
3
PC_EN  
PC_IT  
1
Bit  
PC_IT (mA)  
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
50  
100  
150  
200  
250  
300  
350  
400  
001  
2:0  
R/W  
MONITOR0  
Register Address: 10h (16)  
Default Value=XXX0 XXXX (XXh)  
7
6
5
ITERM_CMP  
R
R
R
ITERM comparator output, 1 when ICHARGE > ITERM reference  
Output of VBAT comparator, 1 when VBAT < VBUS  
VBAT_CMP  
LINCHG  
1 when 30 mA linear charger ON (VBAT < VSHORT  
)
Thermal regulation comparator, 1 when the die temperature is greater than 120°C.  
If battery is being charged in Precharge mode, the charge current is limited to  
200 mA and in Fast Charge, 550 mA.  
4
T_120  
R
3
2
1
ICHG  
IBUS  
R
R
R
0 indicates the ICHARGE loop is controlling the battery charge current.  
0 indicates the IBUS (input current) loop is controlling the battery charge current.  
1 indicates VBUS has passed validation and is capable of charging.  
VBUS_VALID  
1 indicates the constant-voltage loop (OREG) is controlling the charger and all  
current limiting loops have released.  
0
CV  
R
MONITOR1  
Register Address: 11h (17)  
Default Value=XX1X XXX0  
The GATE bit indicates the state of the GATE pin. If the bit is “0”, the pin is low,  
driving the PFET, Q5 on. A “1” will disable Q5, but current can still flow from battery  
to the system through Q5’s body diode.  
7
GATE  
R
R
A “1” indicates VBAT > VBATMIN in PP charging or VBAT > VLOWV in PWM charging. A  
“0” indicates VBAT < VBATMIN in PP charging or VBAT < VLOWV in PWM charging.  
6
5
VBAT  
POK_B indicates the state of the POK_B pin (see section on POK_B). This bit can  
R/W be set to a 1 if VBAT has fallen below VLOWV, in turn the open drain POK_B pin will  
be Hi-Z.  
1
POK_B  
This pin indicates the state of the DIS pin. A “1” indicates the DIS pin is high and the  
device is in a Hi-Z state on the input and the PWM controller is not running.  
4
3
DIS_LEVEL  
NOBAT  
R
A “1” on this bit indicates that the device has determined there is no battery  
connected.  
R
2
PC_ON  
R
R
A “1” on this bit indicates that Post charging (background charging) is in progress.  
1:0  
Reserved  
0
These bits always return 0.  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
37  
Bit  
NTC  
7:6  
Name  
Value Type  
Description  
Default Value=000X XXXX  
Register Address: 12H (18)  
Reserved  
00  
R
These bits always return 0.  
0
R/W  
NTC Temperature measurement results affect charge parameters.  
5
TEMP_DIS  
NTC Temperature measurement results do not affect charge. Temperature  
measurements continue to be updated every second in the NTC1-4 monitor bits.  
1
4
3
2
1
0
NTC_OK  
NTC4  
R
R
R
R
R
0 if NTC is either shorted to GND, open, or shorted to REF.  
1 indicates that NTC is above the T4 threshold.  
See Battery Temperature (NTC)  
Monitor  
NTC3  
1 indicates that NTC is above the T3 threshold.  
NTC2  
1 indicates that NTC is above the T2 threshold.  
NTC1  
1 indicates that NTC is above the T1 threshold.  
WD_CONTROL  
Register Address: 13h (19)  
This bit always returns 0  
This bit always returns 1  
This bit always returns 1  
This bit always returns 0  
This bit always returns 1  
Default Value = 0110 1110 (6Eh)  
0
1
1
0
1
7
6
5
4
3
Reserved  
R
R
R
R
R
Reserved  
Reserved  
Reserved  
Reserved  
The EN_VREG defaults to a “1” enabling the regulator. To disable the regulator, set  
the bit to a “0”.  
1
R/W  
2
EN_VREG  
A “1” disables the Watchdog (t32s) and t15MIN timers. Setting the bit to a “0” will  
enable the timers (See Safety Timer Section for further information).  
1
R/W  
1
0
WD_DIS  
Reserved  
0
R
This bit always returns 0  
RESTART  
Register Address: FAh (250)  
Default Value = 1111 1111 (FFh)  
Writing B5h restarts charging when the IC is in the charge done state. This register  
reads back FF.  
7:0 RESTART  
W
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
38  
PCB Layout Recommendation  
Bypass capacitors should be placed as close to the IC as  
possible. In particular, the total loop length for CMID should  
be minimized to reduce overshoot and ringing on the SW,  
PMID, and VBUS pins. Power and ground pins should be  
routed directly to their bypass capacitors using the top  
copper layer. The copper area connecting to the IC should  
be maximized to improve thermal performance.  
Figure 46. PCB Layout Recommendation  
Product-Specific Dimensions  
Product  
D
E
X
Y
FAN54053UCX  
2.40 ±0.030  
2.00 ±0.030  
0.180  
0.380  
© 2014 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN54053 Rev. 1.4  
39  
0.03 C  
F
E
A
2X  
1.60  
0.40  
B
(Ø0.200)  
Cu Pad  
A1  
BALL A1  
INDEX AREA  
(Ø0.300)  
Solder Mask  
1.60  
D
0.40  
0.03 C  
RECOMMENDED LAND PATTERN  
(NSMD PAD TYPE)  
2X  
TOP VIEW  
0.06 C  
0.625  
0.378±0.018  
0.208±0.021  
0.547  
0.05 C  
E
SIDE VIEWS  
C
SEATING PLANE  
D
NOTES:  
A. NO JEDEC REGISTRATION APPLIES.  
B. DIMENSIONS ARE IN MILLIMETERS.  
C. DIMENSIONS AND TOLERANCE  
PER ASMEY14.5M, 1994.  
1.60  
0.40  
0.005  
C A B  
Ø0.260±0.02  
25X  
D. DATUM C IS DEFINED BY THE SPHERICAL  
CROWNS OF THE BALLS.  
E
D
C
B
E. PACKAGE NOMINAL HEIGHT IS 586 MICRONS  
±39 MICRONS (547-625 MICRONS).  
1.60  
0.40  
(Y) ±0.018  
F. FOR DIMENSIONS D, E, X, AND Y SEE  
PRODUCT DATASHEET.  
A
F
2
3
5
4
1
G. DRAWING FILENAME: MKT-UC025AArev3.  
(X) ±0.018  
BOTTOM VIEW  
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