FAN54053UCX [ONSEMI]
高能效,1.55 A,带功率路径的锂离子开关充电器,USB-OTG,方案占位小;型号: | FAN54053UCX |
厂家: | ONSEMI |
描述: | 高能效,1.55 A,带功率路径的锂离子开关充电器,USB-OTG,方案占位小 开关 |
文件: | 总42页 (文件大小:1818K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 2015
FAN54053
High Efficiency, 1.55 A, Li-Ion Switching Charger with
Power Path, USB-OTG, in a Small Solution Footprint
Features
Description
.
Fully Integrated, High-Efficiency Switch-Mode Charger
for Single-Cell Li-Ion and Li-Polymer Batteries
The FAN54053 is a 1.55 A USB-compliant switch-mode
charger featuring power path operation, USB OTG boost
support, JEITA temperature control, and production test mode
support, in a small 25 bump, 0.4 mm pitch WLCSP package.
.
Power Path Circuit Ensures Fast System Startup with a
Dead Battery when VBUS is Connected
To facilitate fast system startup, the IC includes a power
path circuit, which disconnects the battery from the system
rail, ensuring that the system can power up quickly following
a VBUS connection. The power path circuit ensures that the
system rail stays up when the charger is plugged in, even if
the battery is dead or shorted.
.
.
1.55 A Maximum Charge Current
Programmable High Accuracy Float Voltage:
0.5% at 25°C
1% from 0 to 125°C
.
.
.
.
.
.
.
.
5% Input and Charge Current Regulation Accuracy
Temperature-Sense Input for JEITA Compliance
Thermal Regulation and Shutdown
4.2 V at 2.3 A Production Test Support
5 V, 500 mA Boost Mode for USB OTG
28 V Absolute Maximum Input Voltage
6 V Maximum Input Operating Voltage
The charging parameters; float voltage, input voltage
regulation, input current, charging current, and other
operating modes are programmable through an I2C Interface
that operates up to 3.4 Mbps. The charger and boost
regulator circuits switch at 3 MHz to minimize the size of
external passive components.
The FAN54053 provides battery charging in three phases:
conditioning, constant current and constant voltage. The IC
automatically restarts the charge cycle when the battery falls
below a voltage threshold. If the input source is removed, the
IC enters a high-impedance mode blocking battery current
from leaking to the input. Charge status is reported back to
the host through the I2C port.
Programmable through High-Speed I2C Interface
(3.4 Mb/s) with Fast Mode Plus Compatibility
Input Current
Fast-Charge / Termination Current
Float Voltage
Dynamic input voltage control prevents a weak adapter’s
voltage from collapsing, ensuring charging capability from
such adapters.
Termination Enable
.
3 MHz Synchronous Buck PWM Controller with
Wide Duty Cycle Range
The FAN54053 is available in a space saving 2.4 mm x
2.0 mm WLCSP package.
.
.
.
.
Small Footprint 1 H External Inductor
Safety Timer with Reset Control
VBUS
CBUS
L1
SW
Dynamic Input Voltage Control
SYS
CSYS
PGND
Very Low Battery Current when Charger Inactive
Q5
PMID
GATE
SYSTEM
LOAD
Applications
External
PMOS
CMID
.
.
.
Cell Phones, Smart Phones, PDAs
FAN54053
VBAT
POK_B
SDA
Tablet, Portable Media Players
Gaming Device, Digital Cameras
CBAT
NTC
REF
RREF
SCL
DIS
BATTERY
CREF
STAT
AGND
+
T
All trademarks are the property of their respective owners.
Figure 1.
Typical Application
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
Ordering Information
Temperature
PN Bits:
IC_INFO[5:3]
Part Number
Package
Packing Method
Range
25-Bump, Wafer-Level Chip-Scale
Package (WLCSP), 0.4 mm Pitch
FAN54053UCX
-40 to 85°C
010
Tape and Reel
Table 1. Feature Summary
Battery Absent
Watchdog
Timer Default
Part Number
Slave Address Automatic Charge
E1 Pin
Behavior
FAN54053
1101011
No
On
POK_B
Disabled
Block Diagram
VBUS
PMID
SW
Q3
CBUS
Q1
CMID
Q1A
Q1B
PGND
CHARGE
PUMP
L1
IBUS &
VBUS
CONTROL
30mA
AGND
CSYS
PWM
MODULATOR
Q2
SYS
SYSTEM
LOAD
VBUS OVP
POWER OK
PGND
Q5
GATE
External
PMOS
Q4
CC and CV
Battery
Charger
Q4A
Q4B
POK_B
SDA
I2C INTERFACE
VBAT
NTC
SCL
CBAT
LOGIC AND CONTROL
DIS
TEMP
SENSE
RREF
STAT
REF
CREF
BATTERY
+
T
PMID
Greater than VBAT
Less than VBAT
Q1A
ON
Q1B
OFF
ON
SYS
Greater than VBAT
Less than VBAT
Q4A
ON
Q4B
OFF
ON
OFF
OFF
Figure 2.
IC and System Block Diagram
Table 2. Recommended External Components
Component
Description
Vendor
Parameter
Typ.
Unit
L
1.0
48
H
Toko DFE201610E-1R0M
L1
1 H, 20%, 2.7 A, 2016
or Equivalent
DCR (Series R)
m
Murata: GRM188R60J106M
TDK: C1608X5R0J106M
CBAT, CSYS
CMID
C
10
4.7
1.0
10 F, 20%, 6.3 V, X5R, 0603
4.7 F, 10%, 10 V, X5R, 0603
1.0 F, 10%, 25 V, X5R, 0603
F
F
F
Murata: GRM188R61A475K
TDK: C1608X5R1A475K
C(1)
C
Murata GRM188R61E105K
TDK:C1608X5R1E105M
CBUS,
Q5
CREF
Fairchild FDMA905P
RDS(ON)
C
16
PMOS,12 V, 16 m, MLP2x2
1 F, 10%, 6.3 V, X5R, 0402
m
F
1.0
Note:
1. 10 V rating is sufficient for CMID since PMID is protected from over-voltage surges on VBUS by Q3.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
2
Pin Configuration
SDA PGND SW
PMID VBUS
A5
B5
C5
D5
E5
A4
A3
B3
C3
D3
E3
A2
B2
C2
D2
E2
A1
B1
C1
D1
E1
A1
A2
B2
C2
D2
A3
B3
C3
A4
B4
C4
A5
SCL
B1
B4
B5
DIS
C1
GATE
C5
C4
D4
STAT
D1
SYS VBAT NTC
D3
D4
D5
POK_B AGND
REF
E5
E4
E1
E2
E3
E4
Figure 3.
Top View
Figure 4.
Bottom View
Pin Definitions
Pin #
A1
Name
SDA
Description
I2C Interface Serial Data. This pin should not be left floating.
I2C Interface Serial Clock. This pin should not be left floating.
B1
SCL
Disable. If this pin is held HIGH, Q1 and Q3 are turned off, creating a HIGH Z condition at VBUS and
the PWM converter is disabled.
C1
D1
DIS
Status. Open-drain output indicating charge status. The IC pulls this pin LOW when charge is in
progress; can be used to signal the host processor when a fault condition occurs.
STAT
Power OK. Open-drain output that pulls LOW when VBUS is plugged in and the battery has risen
E1
POK_B above VLOWV. This signal is used to signal the host processor that it can begin to draw significant
current.
Power Ground. Power return for gate drive and power transistors. The connection from this pin to the
bottom of CMID should be as short as possible.
A2 – D2
PGND
E2
AGND
SW
Analog Ground. All IC signals are referenced to this node.
Switching Node. Connect to output inductor.
A3 – C3
System Supply. Output voltage of the switching charger and input to the power path controller. Bypass
SYS to PGND with a 10 μF capacitor.
D3 – E3
A4 – C4
SYS
Power Input Voltage. Power input to the charger regulator, bypass point for the input current sense.
Bypass with a minimum of a 4.7 F, 6.3 V capacitor to PGND.
PMID
Battery Voltage. Connect to the positive (+) terminal of the battery pack. Bypass with a 10 F capacitor
to PGND. VBAT is a power path connection.
D4 – E4
A5 – B5
VBAT
VBUS
Charger Input Voltage and USB-OTG output voltage. Bypass with a 1 F capacitor to PGND.
External MOSFET Gate. This pin controls the gate of an external P-channel MOSFET transistor used
to augment the internal ideal diode. The source of the P-channel MOSFET should be connected to SYS
and the drain should be connected to VBAT.
C5
GATE
Thermistor input. The IC compares this node with taps on a resistor divider from REF to inhibit auto-
charging when the battery temperature is outside of permitted fast-charge limits.
D5
E5
NTC
REF
Reference Voltage. REF is a 1.8 V regulated output.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition,
extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
Continuous
-0.3
-1.0
–0.3
–0.3
–0.3
VBUS
Voltage on VBUS Pin
28.0
V
Pulsed, 100 ms Maximum Non-Repetitive
Voltage on PMID Voltage Pin
7.0
7.0
6.5(2)
VI
V
V
Voltage on SW, SYS, VBAT, STAT, DIS Pins
Voltage on Other Pins
VO
dVBUS
dt
Maximum VBUS Slope Above 5.5 V when Boost or Charger Active
4
V/s
Human Body Model per JESD22-A114
Charged Device Model per JESD22-C101
2000
500
15
Electrostatic Discharge
Protection Level
V
ESD
Air Gap
Contact
USB Connector
Pins (VBUS to GND)
IEC 61000-4-2 System ESD(3)
kV
8
TJ
TSTG
Junction Temperature
Storage Temperature
–40
–65
+150
+150
+260
°C
°C
°C
TL
Lead Soldering Temperature, 10 Seconds
Notes:
2. Lesser of 6.5 V or VI + 0.3 V.
3. Guaranteed if CBUS ≥1 µF and CMID ≥ 4.7 µF.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating
conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend
exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Min.
Max.
Unit
V
VBUS
Supply Voltage
4
6
4.5
4
VBAT(MAX) Maximum Battery Voltage when Boost enabled
V
TA < 60°C
TA > 60°C
dVBUS
dt
Negative VBUS Slew Rate during VBUS Short Circuit,
CMID < 4.7 F, see VBUS Short While Charging
V/s
2
TA
TJ
Ambient Temperature
–30
–30
+85
+120
°C
°C
Junction Temperature (see Register Bit section)
Thermal Properties
Junction-to-ambient thermal resistance is a function of application and board layout. This data is measured with four-layer
2s2p boards in accordance to JEDEC standard JESD51. Special attention must be paid not to exceed junction temperature
TJ(max) at a given ambient temperature TA.
Symbol
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-PCB Thermal Resistance
Typical
50
Unit
°C/W
°C/W
JA
JB
20
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
4
Electrical Specifications
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;
VBUS=5.0 V; HZ_MODE=“0”; OPA_MODE=“0” (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min.
and Max. values are not tested in production, but are determined by characterization.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Power Supplies
PWM Switching
25
6
mA
mA
VBAT > VOREG
IBUSLIM = 500 mA
IVBUS
VBUS Current
0°C < TJ < 85°C, HZ_MODE = “1”,
VBAT > VLOWV
190
280
10
A
A
Battery Discharge Current in DIS pin HIGH, or HZ_MODE = “1”,
IBAT_HZ
<1.25
High-Impedance Mode
VBAT=4.35 V
Battery Leakage Current to
VBUS in High-Impedance
Mode
DIS pin HIGH, or HZ_MODE = “1”,
VBUS Shorted to Ground, VBAT=4.35 V
IBUS_HZ
-5.0
-0.2
A
Charger Voltage Regulation
Charge Voltage Range
3.51
–0.5
–1
4.45
+0.5
+1
V
%
%
VOREG
TA = 25°C, VOREG = 4.35 V
TJ=0 to 125°C
Charge Voltage Accuracy
Charging Current Regulation (Fast Charge)
IO_LEVEL = “0”
550
165
–5
1550
230
+5
mA
mA
%
Output Charge Current
Range
VLOWV < VBAT
VOREG
<
IOCHRG
IO_LEVEL = “1” (default)
200
Charge Current Accuracy
IO_LEVEL = “0”
Weak Battery Detection
Weak Battery Threshold
Range
3.35
3.75
+5
V
VLOWV
Weak Battery Threshold
Accuracy
–5
%
Weak Battery Deglitch Time Rising Voltage, 2 mV Overdrive
PWM Charging Threshold
Rising PWM Charging
32
ms
VBATMIN
3.1
3.2
3.0
3.3
V
V
Threshold
Falling PWM Charging
Threshold
VBATFALL
Logic Levels: DIS, SDA, SCL
VIH
VIL
IIN
High-Level Input Voltage
1.05
V
V
Low-Level Input Voltage
Input Bias Current
0.4
Input Tied to GND or VBUS
0.01
1
1.00
A
M
RPD
DIS Pull-Down Resistance
Charge Termination Detection
Termination Current Range
VBAT > VOREG – VRCH, VBUS > VSLP
ITERM Setting < 100 mA
50
–15
–5
400
+15
+5
mA
%
Termination Current
Accuracy
I(TERM)
ITERM Setting > 200 mA
Termination Current Deglitch
Time(4)
32
ms
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
5
Electrical Specifications (Continued)
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;
VBUS=5.0 V; HZ_MODE=“0”; OPA_MODE=“0” (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min.
and Max. values are not tested in production, but are determined by characterization.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Power Path (Q4) Control (Precharge)
IO_LEVEL = “1” (default)
165
165
375
610
–6
200
200
450
730
–5
235
235
520
840
–3
mA
mA
mA
mA
mV
IO_LEVEL = “0”, IBUSLIM < “01”
Power Path Maximum
Charge Current
IPP
IO_LEVEL = “0”, IBUSLIM > “01”, IOCHARGE < “02”
IO_LEVEL = “0”, IBUSLIM > “01”, IOCHARGE > “02”
(SYS-VBAT) Falling
VBAT to SYS Threshold
VTHSYS
for Q4 and Gate Transition
While Charging
(SYS-VBAT) Rising
-1
+1
2
mV
Production Test Mode
Production Test Output
Voltage
(4)
VBAT(PTM)
1 mA < IBAT < 2 A, VBUS=5.5 V
4.116 4.200 4.284
2.3
V
A
Production Test Output
Current
(4)
IBAT(PTM)
20% Duty with Max. Period 10 ms
Battery Temperature Monitor (NTC)
T1 (0°C) Temperature
Threshold
T1
71.9
62.6
31.9
21.3
73.9
64.6
32.9
23.3
75.9
66.6
34.9
25.3
T2 (10°C) Temperature
Threshold
T2
% of
VREF
T3 (45°C) Temperature
Threshold
T3
T4 (60°C) Temperature
Threshold
T4
Input Power Source Detection
VIN(MIN)1
VBUS Input Voltage Rising To Initiate and Pass VBUS Validation
4.35
4.45
3.94
V
V
Minimum VBUS during
During Charging
Charge
VIN(MIN)2
3.71
30
(4)
tVBUS_VALID
VBUS Validation Time
ms
VBUS Control Loop
VBUS Loop Setpoint
Accuracy
Input Current Limit
VBUSLIM
–3
+3
%
IBUSLIM = “00”
IBUSLIM = “01”
IBUSLIM = “10”
450
972
475
760
500
1188
Charger Input Current
Limit Threshold
IBUSLIM
mA
1080
VREF Bias Generator
Bias Regulator Voltage
Short-Circuit Current Limit
Battery Recharge Threshold
Recharge Threshold
Deglitch Time
STAT, POK_B Output
VSTAT(OL) STAT Output Low
VBUS > VIN(MIN)1
1.8
2.5
V
VREF
mA
Below VOREG
100
120
130
150
mV
VRCH
VBAT Falling Below VRCH Threshold
ms
ISTAT = 10 mA
VSTAT = 5 V
0.4
1
V
STAT High Leakage
Current
ISTAT(OH)
A
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
6
Electrical Specifications (Continued)
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;
VBUS=5.0 V; HZ_MODE=”0”; OPA_MODE=”0” (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min.
and Max. values are not tested in production, but are determined by characterization.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Battery Detection
Battery Detection Current before
Charge Done (Sink Current)(5)
IDETECT
tDETECT
–1.9
mA
ms
Begins after Termination Detected and
VBAT < VOREG – VRCH
Battery Detection Time
262
Sleep Comparator
Sleep-Mode Entry Threshold,
VBUS – VBAT
Power Switches (see Figure 2)
Q3 On Resistance (VBUS to PMID) IIN(LIMIT) = 500 mA
VSLP
2.3 V < VBAT < VOREG, VBUS Falling
0
0.04
0.10
V
180
130
150
70
400
225
225
100
Q1 On Resistance (PMID to SW)
Q2 On Resistance (SW to GND)
Q4 On Resistance (SYS to VBAT)
mΩ
RDS(ON)
VBAT=4.35 V
mΩ
Synchronous to Non-Synchronous
Current Cut-Off Threshold(6)
Low-Side MOSFET (Q2) Cycle-by-Cycle
Current Limit
ISYNC
180
mA
Charger PWM Modulator
fSW
Oscillator Frequency
2.7
3.0
0
3.3 MHz
DMAX
DMIN
Maximum Duty Cycle
Minimum Duty Cycle
100
%
%
Boost Mode Operation (OPA_MODE=1)
2.5 V < VBAT < 4.5 V, ILOAD from 0 to
200 mA
4.80
4.77
5.07
5.07
5.20
5.20
VBOOST
Boost Output Voltage at VBUS
V
3.0 V < VBAT < 4.5 V, ILOAD from 0 to
500 mA
IBAT(BOOST) Boost Mode Quiescent Current
PFM Mode, VBAT = 3.6 V, ILOAD = 0 A
250
1550
2.32
2.48
350
A
ILIMPK(BST)
Q2 Peak Current Limit
1350
1950
mA
While Boost Active
Minimum Battery Voltage for Boost
Operation
UVLOBST
V
To Start Boost Regulator
2.70
VBUS Load Resistance
Normal Operation
VBUS Validation
500
100
k
RVBUS
VBUS to PGND Resistance
Protection and Timers
VBUS Over-Voltage Shutdown
VBUS Rising
VBUS Falling
6.09
1.95
6.29
100
6.49
2.07
V
VBUSOVP
ILIMPK(CHG)
VSHORT
ISHORT
Hysteresis
mV
Q1 Cycle-by-Cycle Peak Current
Limit
Charge Mode
VBAT Rising
3
A
Battery Short-Circuit Threshold
Hysteresis
2.00
100
V
mV
Linear Charging Current
VBAT < VSHORT
30
mA
Thermal Shutdown Threshold(4)
Hysteresis(4)
TJ Rising
145
25
TSHUTDWN
°C
TJ Falling
TCF
tINT
Thermal Regulation Threshold(4)
Charge Current Reduction Begins
120
2.1
°C
s
Detection Interval
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
7
Electrical Specifications (Continued)
Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA;
VBUS=5.0 V; HZ_MODE; OPA_MODE=0; (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Min. and
Max. values are not tested in production, but are determined by characterization.
Symbol
Parameter
32-Second Timer(7)
Conditions
Charger Enabled
Min. Typ. Max. Unit
20.5
18.0
12.0
–23
25.2
25.2
13.5
28.0
34.0
t32S
s
Charger Disabled
15-Minute Mode
Charger Inactive
t15MIN
15-Minute Timer
15.0 min
27
∆tLF
Low-Frequency Timer Accuracy
%
Notes:
4. Guaranteed by design; not tested in production.
5. Negative current is current flowing from the battery to VBUS (discharging the battery).
6. Q2 always turns on for 60 ns, then turns off if current is below ISYNC
.
7. This tolerance (%) applies to all timers on the IC, including soft-start and deglitching timers.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
8
I2C Timing Specifications
Guaranteed by design.
Symbol
Parameter
Conditions
Standard Mode
Min.
Typ. Max.
Unit
100
400
1000
3400
1700
4.7
Fast Mode
fSCL
SCL Clock Frequency
Fast Mode Plus
kHz
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
BUS-free Time between STOP and
START Conditions
tBUF
Fast Mode
1.3
s
Fast Mode Plus
0.5
Standard Mode
4
s
ns
ns
ns
s
s
s
ns
ns
s
ns
ns
ns
ns
s
ns
ns
ns
Fast Mode
600
260
160
4.7
START or Repeated START Hold
Time
tHD;STA
Fast Mode Plus
High-Speed Mode
Standard Mode
Fast Mode
1.3
tLOW
SCL LOW Period
SCL HIGH Period
Fast Mode Plus
0.5
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
160
320
4
Fast Mode
600
260
60
tHIGH
Fast Mode Plus
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
120
4.7
Fast Mode
600
260
160
250
100
50
tSU;STA
Repeated START Setup Time
Data Setup Time
Fast Mode Plus
High-Speed Mode
Standard Mode
Fast Mode
tSU;DAT
ns
Fast Mode Plus
High-Speed Mode
Standard Mode
10
0
0
0
0
0
3.45
900
450
70
s
ns
ns
ns
ns
Fast Mode
tHD;DAT
Data Hold Time
SCL Rise Time
Fast Mode Plus
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
150
20+0.1CB
20+0.1CB
20+0.1CB
10
20
1000
300
120
80
Fast Mode
tRCL
Fast Mode Plus
ns
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
160
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
9
I2C Timing Specifications (Continued)
Guaranteed by design.
Symbol
Parameter
Conditions
Standard Mode
Min.
20+0.1CB
20+0.1CB
20+0.1CB
10
Typ. Max.
Unit
300
300
120
40
Fast Mode
tFCL
SCL Fall Time
Fast Mode Plus
ns
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
20
10
20
80
80
Rise Time of SCL after a Repeated
START Condition and after ACK Bit
tRCL1
ns
ns
160
1000
300
120
80
20+0.1CB
Fast Mode
20+0.1CB
20+0.1CB
tRDA
SDA Rise Time
SDA Fall Time
Fast Mode Plus
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
10
20
20+0.1CB
160
300
300
120
80
Fast Mode
20+0.1CB
20+0.1CB
tFDA
Fast Mode Plus
ns
High-Speed Mode, CB < 100 pF
High-Speed Mode, CB < 400 pF
Standard Mode
10
20
4
160
s
ns
ns
ns
pF
Fast Mode
600
120
160
tSU;STO
Stop Condition Setup Time
Fast Mode Plus
High-Speed Mode
CB
Capacitive Load for SDA and SCL
400
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
10
Timing Diagrams
tF
tSU;STA
tBUF
SDA
tR
TSU;DAT
tHD;STO
tHIGH
tHD;DAT
SCL
tLOW
tHD;STA
tHD;STA
REPEATED
START
START
STOP
START
Figure 5.
I2C Interface Timing for Fast and Slow Modes
REPEATED
START
STOP
tFDA
tRDA
tSU;DAT
SDAH
tSU;STA
tRCL1
tFCL
tHIGH
tHD;DAT
note A
tRCL
tSU;STO
SCLH
tLOW
tHD;STA
REPEATED
START
= MCS Current Source Pull-up
= RP Resistor Pull-up
Note A: First rising edge of SCLH after Repeated Start and after each ACK bit.
Figure 6.
I2C Interface Timing for High-Speed Mode
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
11
Charge Mode Typical Characteristics
Unless otherwise specified, circuit of Figure 1, VOREG=4.35 V, IOCHARGE=950 mA, VBUS=5.0 V, and TA=25°C.
800
700
600
500
400
300
200
100
1,700
1,500
1,300
1,100
900
700
4.7 VBUS
5.0 VBUS
5.5 VBUS
4.7 VBUS
5.0 VBUS
5.5 VBUS
500
300
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
Battery Voltage VBAT (V)
Battery Voltage VBAT (V)
Figure 7.
Battery Charge Current vs. VBUS with
IBUSLIM=500 mA
Figure 8.
Battery Charge Current vs. VBUS with
IBUSLIM=1100 mA
95
94
90
85
80
75
70
65
92
90
88
86
84
82
4.7VBUS, 3.9VBAT
4.7 VBUS
5.0 VBUS
5.5 VBUS
5.0VBUS, 3.9VBAT
5.0VBUS, 4.3VBAT
5.5VBUS, 4.3VBAT
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
550
750
950
1150
1350
1550
Battery Voltage VBAT (V)
Battery Charge Current IBAT (mA)
Figure 10. Efficiency vs. Charging Current,
IBUSLIM=No Limit
Figure 9.
Efficiency vs. VBUS, IBUSLIM=500 mA, ISYS=0
1,000
800
2.00
1.80
1.60
1.40
1.20
1.00
600
400
-30C
+25C
+85C
-30C
+25C
+85C
200
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0
1
2
3
4
5
VBUS Input Voltage (V)
VREF Load Current (mA)
Figure 11. HZ Mode VBUS Current vs. Temperature,
3.7 VBAT
Figure 12. VREF vs. Load Current, Over-Temperature
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
12
Charge Mode Typical Characteristics
Unless otherwise specified, circuit of Figure 1, VOREG=4.35 V, IOCHARGE=950 mA, VBUS=5.0 V, and TA=25°C.
Figure 13. Charger Startup at VBUS Plug-In, 500 mA
IBUSLIM, 3.1 VBAT, 50 Ω SYS Load, CE# = 0,
IO_LVL=1
Figure 14. Charger Startup at VBUS Plug-In, 1100 mA
IBUSLIM, 3.6 VBAT, 700 mA SYS Load, CE# = 0,
IO_LVL=0
Figure 16. Charger Startup with HZ Bit Reset,
500 mA IBUSLIM, 950 mA ICHARGE, 50 SYS Load,
CE# = 0
Figure 15. Charger Startup at VBUS Plug-In Using
300 mA Current Limited Source, 500 mA IBUSLIM
3.1 VBAT, 200 mA SYS Load, CE# = 0, IO_LVL=0
,
© 2014 Fairchild Semiconductor Corporation
FAN54053 • Rev. 1.4
www.fairchildsemi.com
13
Charge Mode Typical Characteristics
Unless otherwise specified, circuit of Figure 1, VOREG=4.35 V, IOCHARGE=950 mA, VBUS=5.0 V, and TA=25°C.
Figure 17. Battery Removal / Insertion while
Charging, TE=0, 3.9 VBAT, ICHRG=950 mA, IBUSLIM=No
Limit, 50 Ω SYS Load
Figure 18. Battery Removal / Insertion when
Charging, TE=1, 3.9 VBAT, IBUSLIM=No Limit, 50 Ω
SYS Load
Figure 19. Charger Enable (CE# = 1 -0) with VBUS
Applied, IBUSLIM=500 mA, 200 mA SYS Load,
IO_LVL=0
Figure 20. No Battery at VBUS Power-Up, 100 Ω SYS
Load, 1 kΩ VBAT Load
© 2014 Fairchild Semiconductor Corporation
FAN54053 • Rev. 1.4
www.fairchildsemi.com
14
GSM Typical Characteristics
A 2.0 A GSM pulse applied at VBAT with 5 µs rise / fall time. Simultaneous to GSM pulse, 50 Ω additional load applied at SYS.
Figure 21. 2.0 A GSM Pulse Response,
IBUSLIM=500 mA Control, ICHRG=950 mA, 3.7 VBAT
OREG=4.35 V
Figure 22. 2.0 A GSM Pulse Response,
IBUSLIM=500 mA, ICHRG=950 mA, 3.7 VBAT
OREG=4.35 V, 200 mA Source Current Limit
,
,
© 2014 Fairchild Semiconductor Corporation
FAN54053 • Rev. 1.4
www.fairchildsemi.com
15
Boost Mode Typical Characteristics
Unless otherwise specified, using circuit of Figure 1, VBAT=3.6 V, TA=25°C.
100
95
90
85
80
75
100
95
90
85
80
75
-10C, 3.6VBAT
+25C, 3.6VBAT
+85C, 3.6VBAT
2.7VBAT
3.6VBAT
4.2VBAT
0
100
200
300
400
500
0
100
200
300
400
500
VBUS Load Current (mA)
VBUS Load Current (mA)
Figure 23. Efficiency vs. IBUS Over VBAT
Figure 24. Efficiency vs. IBUS Over-Temperature,
3.6 VBAT
5.15
5.10
5.05
5.00
4.95
4.90
4.85
30
25
20
15
2.7VBAT
3.6VBAT
4.2VBAT
10
2.7VBAT
5
3.6VBAT
4.2VBAT
0
0
100
200
300
400
500
0
100
200
300
400
500
VBUS Load Current (mA)
VBUS Load Current (mA)
Figure 25. Regulation vs. IBUS Over VBAT
Figure 26. Output Ripple vs. IBUS Over VBAT
350
10
-30C
+25C
+85C
300
250
200
150
100
8
6
4
2
0
-30C
+25C
+85C
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
Battery Voltage, VBAT (V)
Battery Voltage, VBAT (V)
Figure 27. Quiescent Current (IQ) vs. VBAT Over-
Temperature
Figure 28. Battery Discharge Current vs. VBAT, HZ /
Sleep Mode
© 2014 Fairchild Semiconductor Corporation
FAN54053 • Rev. 1.4
www.fairchildsemi.com
16
Boost Mode Typical Characteristics
Unless otherwise specified, using circuit of Figure 1, VBAT=3.6 V, TA=25°C.
Figure 29. OTG Startup, 50 Ω Load, 3.6 VBAT
Figure 30. OTG VBUS Overload Response
External / Additional 10 µf on VBUS
Figure 31. Load Transient, 20-200-20 mA IBUS
,
Figure 32. Line Transient, 50 Ω Load, 3.9-3.3-
tRISE/FALL=100 ns
3.9 VBAT, tRISE/FALL=10 µs
© 2014 Fairchild Semiconductor Corporation
FAN54053 • Rev. 1.4
www.fairchildsemi.com
17
Circuit Description / Overview
When charging batteries with a current-limited input source,
such as USB, a switching charger’s high efficiency over a
wide range of output voltages minimizes charging time.
PWM Controller in Charge Mode
The IC uses a current-mode PWM controller to regulate the
output voltage and battery charge currents. The synchronous
rectifier (Q2) has a negative current limit that turns off Q2 at
140 mA to prevent current flow from the battery.
FAN54053 combines a highly integrated synchronous buck
regulator for charging with a synchronous boost regulator,
which can supply 5 V to USB On-The-Go (OTG) peripherals.
The FAN54053 employs synchronous rectification for both
the charger and boost regulators to maintain high efficiency
over a wide range of battery voltages and charge states.
Battery Charging Curve
If the battery voltage is below VSHORT, a linear current source
pre-charges the battery until VBAT reaches VSHORT. The PWM
charging circuit is then started and the battery is charged
with a constant current if sufficient input power is available.
The current slew rate is limited to prevent overshoot.
The FAN54053 has four operating modes:
1. Charge Mode:
Charges a single-cell Li-ion or Li-polymer battery.
During the current regulation phase of charging, IBUSLIM or
the programmed charging current limits the amount of
current available to charge the battery and power the
system.
2. Boost Mode:
Provides 5 V power to USB-OTG with an integrated
synchronous rectification boost regulator, using the
battery as input.
During the voltage regulation phase of charging, assuming
that VOREG is programmed to the cell’s fully charged “float”
voltage, the current that the battery accepts with the PWM
regulator limiting its output (sensed at VBAT) to VOREG
declines.
3. High-Impedance Mode:
Both the boost and charging circuits are OFF in this
mode. Current flow from VBUS to the battery or from the
battery to VBUS is blocked in this mode. This mode
consumes very little current from VBUS or the battery.
VBAT
VFLOAT
4. Production Test Mode:
IBAT
This mode provides 4.35 V output on VBAT and
supplies a load current of up to 2.3 A.
ICHARGE
IO_LEVEL
VBATMIN
Charge Mode and Registers
ITERM
Charge Mode
In Charge Mode, FAN54053 employs six regulation loops:
VSHORT
ISHORT
1. Input Current: Limits the amount of current drawn from
VBUS. This current is sensed internally and can be
programmed through the I2C interface.
ISHORT
CHARGE
CONSTANT
VOLTAGE (CV)
PRE-
CONSTANT
CHARGE CURRENT (CC)
RE-
CHARGE
ICHARGE Current Charging
2. Charging Current: Limits the maximum charging current.
This current is sensed using an internal sense
MOSFET.
Figure 33. Charge Curve, ICHARGE Not Limited by
IBUSLIM
3. VBUS Voltage: This loop is designed to prevent the
input supply from being dragged below VBUSLIM (typically
4.5 V) when the input power source is current limited.
An example of this would be a travel charger. This loop
cuts back the current when VBUS approaches VBUSLIM,
allowing the input source to run in current limit.
The FAN54053 is designed to work with a current-limited
input source at VBUS as shown below:
VBAT
VFLOAT
ICHARGE
4. Charge Voltage: The regulator is restricted from
exceeding this voltage. As the internal battery voltage
rises, the battery’s internal impedance works in
conjunction with the charge voltage regulation to
decrease the amount of current flowing to the battery.
Battery charging is completed when the current through
Q4 drops below the ITERM threshold.
IBA
T
IO_LEVEL
VBATMIN
ITERM
VSHORT
ISHORT
5. Pre-charge: When VBAT is below VBATMIN, Q4 operates
as a linear current source and modulates its current to
ensure that the voltage on SYS stays above 3.4 V.
ISHORT
CHARGE
CONSTANT
VOLTAGE (CV)
PRE-
CONSTANT
CHARGE CURRENT (CC)
RE-
CHARGE
Input Current Limited Charging
6. Temperature: If the IC’s junction temperature reaches
120°C, charge current is reduced until the IC’s
temperature is below 120°C.
Figure 34. Charge Curve, IBUSLIM Limits ICHARGE
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
18
The following charging parameters can be programmed by
the host through I2C:
PWM charging stops and the PC_ON bit changes back to
“0”. If the charging current goes above ITERM without first falling
to PC_IT, the PC_ON bit can be reset by using any of these
methods: VBAT moving below and above VBATMIN, a VBUS POR,
or the CE# or HZ_MODE bit cycled. If VBAT falls to VRCH below
VOREG, the Fast Charge cycle starts again.
Table 3. Programmable Charging Parameters
Parameter
Name
Register
Output Voltage Regulation
Battery Charging Current Limit
Input Current Limit
VOREG
REG2[7:2]
See ITERM Register Bit Definitions
IOCHARGE REG4[6:3]
Weak Battery Voltage (VLOWV
)
IBUSLIM
ITERM
VLOWV
VBUSLIM
REG1[7:6]
REG4[2:0]
REG1[5:4]
REG5[2:0]
The FAN54053 monitors the level of the battery with respect
to a programmable VLOWV (REG01h<5:4>) threshold (default
3.7 V). The VLOWV threshold defines the voltage level of the
battery at which the system is guaranteed to be fully
operational when only powered by the battery.
Charge Termination Limit
Weak Battery Voltage
VBUS Control
The POK_B pin pulls LOW once VBAT reaches VLOWV, and
remains LOW as long as the IC is in Fast Charge. The IC will
remain in Fast Charge as long as VBAT > 3.0 V.
Output Voltage Regulation (VOREG
)
The charger output or “float” voltage can be programmed by
the OREG (REG02[7:2]) bits from 3.51 V to 4.45 V in 20 mV
increments. The defauilt setting is 3.55 V.
See VLOWV Register Bit Definitions
VBUS Control loop (VBUSLIM
)
See OREG Register Bit Definitions
The IC includes a control loop that limits input current in
case a current-limited source is supplying VBUS
.
Battery Charging Current Limit (IOCHARGE
)
The control increases the charging current until either:
When the IO_LEVEL bit is set (default), the IOCHARGE bits are
ignored and charge current is set to 200 mA.
.
.
IBUSLIM or IOCHARGE is reached OR
VBUS = VBUSLIM
.
See IOCHARGE Register Bit Definitions
If VBUS collapses to VBUSLIM, the VBUS loop reduces its
current to keep VBUS = VBUSLIM. When the VBUS control loop
is limiting the charge current, the VLIM bit (REG05h[3]) is
set.
Input Current Limiting (IBUSLIM
To minimize charging time without overloading VBUS current
limitations, the IC’s input current limit can be programmed by
the IBUSLIM (REG1[7:6]) bits.
)
See VBUSLIM Register Bit Definitions
For the FAN54053, no charging occurs automatically at VBUS
POR, so the input current limit is established by the IBUSLIM
bits.
See IBUSLIM Register Bit Definitions
Charger Operation
Termination Limit (ITERM
)
VBUS Plug In and Safety Timer
Charge current termination can be enabled or disabled using
the TE (REG01h[3]) bit. By default TE = “0”, therefore,
termination is disabled and charging does not terminate at
the programmed ITERM level.
At VBUS plug in, the TMR_RST (Reg00h[7]) bit must be set
within 2 seconds of VBUS rising above V(INMIN)1 or all registers,
except for SAFETY (REG06h), are set to their default
values. This functionality occurs regardless of the state of
the CE# and WD_DIS bit. If plug in occurs with the device in
a HZ or Charge Done state and the TMR_RST bit is not set
within 2 seconds of VBUS rising above V(INMIN)1, all register,
except for SAFETY, will reset when the device enters PWM
Charging or Recharge.
When TE = “1”, and VBAT reaches VOREG, the charging
current is reduced, limited by the battery’s ESR and its
internal cell voltage. When the charge current falls below
ITERM; PWM charging stops; but the STAT pin remains LOW.
The STAT pin then goes HIGH and the STAT bits change to
CHARGE DONE (10), provided the battery and charger are
still connected. If VBAT falls to VRCH below VOREG, the Fast
Charge cycle starts again.
By default, the safety timers do not run in the FAN54053. A
Watchdog (t32s) timer can be enabled by setting the WD_DIS
register bit, (REG13h[1]) to “0”. When WD_DIS = “0”,
charging is controlled by the host with the t32S timer running
to ensure that the host is alive. Setting the TMR_RST bit
resets the t32S timer. If the t32S timer times out; all registers,
except SAFETY, are set to their default values (including
WD_DIS and CE#), the FAULT bits are set to “110”, and
STAT is pulsed.
Post-charging can be enabled to “top-off” the battery to a
lower termination current threshold than ITERM. The PC_EN
bit (REG07h[3]) must be set to “1” before the battery
charging current reaches ITERM. The lower termination
current is set by the PC_IT (REG07h[2:0] bits. Post-charging
begins after normal charging is ended (as described above)
with the PC_ON (REG11h[2]) monitor bit set to “1”.
During post-charging, the STAT pin is HIGH, indicating that
the charge current is below the ITERM level. Once the current
reaches the threshold for post-charging completion (PC_IT),
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
19
VBUS POR / Non-Compliant Charger Rejection
Power Path Operation
256 ms after VBUS is connected, the IC pulses the STAT pin
and sets the VBUS_CON bit. Before starting to supply
current, the IC applies a 110 load from VBUS to GND.
VBUS must remain above VIN(MIN)1 and below VBUSOVP for
tVBUS_VALID (32 ms) before the IC initiates charging or
supplies power to SYS.
As long as VBAT < VBATMIN, Q4 operates as a linear current
source, (Precharge) with its current (IPP) limited to 200 mA
when IO_LEVEL (REG05h[5]) is set to its default value of
“1”. If IO_LEVEL is set to “0” and IINLIM > “01”, charge current
is limited to 450 mA when IOCHARGE ≤ 750 mA, and 730 mA
when IOCHARGE > 750 mA. Providing the input current is not
limited by the IBUSLIM setting or the current available from the
source, during precharge, the IC regulates SYS to 3.55 V
and provides the IO_LEVEL limited current to the battery.
The VBUS validation sequence always occurs before
significant current is available to be drawn from VBUS (for
example, after a VBUS OVP fault or a VRCH (recharge
initiation). tVBUS_VALID ensures that unfiltered 50/60 Hz
chargers and other non-compliant chargers are rejected.
System power always has the highest priority when power
from the buck is limited ensuring SYS does not fall below
3.4 V. This is managed by folding back the current to charge
the battery until charge current is reduced to 0 A.
USB-Friendly Boot Sequence
The FAN54053 does not automatically initiate charging at
VBUSPOR. Instead, prior to receiving host commands, the
buck is enabled to provide power to SYS while Q4 and Q5
remain off until register bit CE# (REG01[2]) is set to “0”
through the I2C interface, allowing charging through Q4.
After VBAT reaches VBATMIN, Q4 closes and is used as a
current-sense element to limit current (IOCHRG) per the I2C
register settings. This is accomplished by limiting the PWM
modulator’s current (Fast Charge). If SYS drops more than
5 mV (VTHSYS) below VBAT and CE# = “0”, Q4 and Q5 are
turned on (GATE is pulled LOW). If CE# = “1”, only Q5 is
turned on. Once SYS voltage becomes higher than VBAT, Q5
is turned off and Q4 again serves as the current-sense
Startup with No Battery
The FAN54053 has Battery Absent Behavior enabled. At
VBUS POR with the battery absent, the PWM will run,
providing 3.55 V to the system from the input source with
current limited by the default IBUSLIM setting.
element to limit IOCHRG
.
If CE# = “1” and DIS pin is high or CE# = “1” and HZ_MODE
= “1” while VBAT > VLOWV, so as to prevent the system from
crashing, Q4 and Q5 are enabled. Q4 and Q5 are also both
turned on when the IC enters SLEEP Mode (VBUS < VBAT).
Startup with a Dead Battery
At VBUS POR, if VBAT < VSHORT, all registers, including the
SAFETY register, are reset to their default values and the
DBAT_B (REG02h[1]) bit is reset. CE# = “1”, so charging is
disabled.
POK_B (see Table 4)
The POK_B pin and POK_B (REG11h[5]) bit are intended to
provide feedback to the baseband processor that the battery
is strong enough to allow the device to fully function.
Whenever the IC is operating in precharge, POK_B is HIGH.
If the battery’s protection switch is open, the PWM will run,
providing 3.55 V to the system from the input source with
current limited by the default IBUSLIM setting. This allows the
host processor to awaken and establish host control. Once
this occurs, the host’s low level software can program the
CE# bit to “0” and a linear current source closes the battery
protection switch. When VBAT voltage rises above VSHORT and
sufficient power is available, PWM charging begins and the
battery is charged through the BATFET, Q4. The IO_LEVEL
(REG05h[5]) bit is set to “1” by default which limits charge
current to 200 mA.
On exiting Precharge, POK_B remains HIGH until VBAT
>
VLOWV. REG01h[5:4] sets the VLOWV threshold.POK_B pulls
LOW once VBAT reaches VLOWV, and remains LOW as long
as the IC is in Fast Charge and the IC will remain in Fast
Charge as long as VBAT > 3.0 V. If the battery voltage falls
below 3.0 V the IC enters Precharge. If WD_DIS = “0” and
the T32S expires during charging, the POK_B pin will go high.
If the battery was above VLOWV and has fallen below the
level, the POK_B bit can be set to change the state of the
pin to be high. This setting of the bit and pin can be used to
With CE# = “1” once VBAT rises above VSHORT, DBAT_B is
set. With CE# = “0” once VBAT rises above VBATMIN, DBAT_B
is set.
signal the system into
a low-power state, preventing
excessive loading from the system while attempting to
recharge a depleted battery.
The STAT pin pulses any time the POK_B pin changes.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
20
Table 4. Q4, Q5, POK_B vs. Operating Mode
Operating Mode
VBUS
VBAT
CE# PWM VSYS
BUS Disconnected
Q4
Q5
GATE
POK_B
< VBAT OR
< VIN(MIN)2
OFF
> VSHORT
X
OFF < VBAT
ON
ON
LOW
HIGH
VBUS Plug in with Battery Protection Switch Open
1
HIGH
PWM
Valid
Valid
OPEN
ON
ON
VOREG OFF
OFF
OFF
HIGH
HIGH
0
Indeterminate(8)
30 mA Linear Charging (9)
< VSHORT
0
3.55
OFF
HIGH
Charge Mode
> VSHORT and
< VBATMIN
Precharge
Precharge:
Valid
Valid
0
ON
3.55 Linear
< 3.55 Linear
OFF
OFF
HIGH
HIGH
HIGH
HIGH
ISYS + Ipp > IPWM
,
< VBATMIN
0
ON
IBAT < IPP
> VBATMIN and
< VLOWV
HIGH
LOW
Fast Charge
Precharge
Valid
Valid
Valid
0
ON
> VBAT
ON
ON
OFF
OFF
HIGH
HIGH
> VLOWV
Battery Voltage Falling from Fast Charge
VBATFALL ON 3.55
Battery Supplementing SYS
0
HIGH
> VSHORT
1
ON
< VBAT
X
X
ON
ON
LOW
LOW
X
X
Supplemental Mode :
ISYS > IPWM
> VBATMIN and
> VSYS + VTHSYS
0
ON
< VBAT
Note:
8. When VBAT is open it can float to VSYS, and POK_B = HIGH when VBAT < VLOWV and POK_B = LOW when VBAT > VLOWV.
9. 30 mA Linear Charging operating mode assumes the host has programmed CE# = “0” during PWM Operating Mode.
The state of the MONITOR register bits listed in High-
Impedance Mode is valid only when VBUS is valid.
Charger Status / Fault Status
The STAT pin indicates the operating condition of the IC and
provides a fault indicator for interrupt driven systems.
Charge Mode Control Bits
The CE# (REG01h[2]) bit is set to “1’ by default, therefore,
charging is disabled.
Table 5. STAT Pin Function
EN_STAT
Charge State
STAT Pin
Setting the RESET (REG04h[7]) bit clears all registers
(except SAFETY). The CE# bit will only be cleared if RESET
occurs with a valid VBUS and VBAT < VLOWV. If HZ_MODE or
the WD_DIS bit was set when the RESET bit is set, this bit is
also cleared. Refer to the Register Bit Definitions section for
more details.
0
X
1
X
OPEN
OPEN
LOW
Normal Conditions
Charging
128 s Pulse,
then OPEN
X
Fault (Charging or Boost)
The HZ_MODE (REG01h[1]) and DIS pin will put the device
in High-Impedance Mode. If HZ_MODE = “1” or DIS pin is
HIGH, so as to prevent the system from crashing, Q4 and
Q5 are enabled.
The FAULT bits (REG00h[2:0]) indicate the type of fault in
Charge Mode.
Monitor Registers (REG10h, REG11h)
The functionality of the HZ_MODE (REG01h[1]) bit and DIS
pin has a dependence upon VBAT voltage level and the
WD_DIS (REG13h[1]) bit state. Refer to Table 5 for details.
Additional status monitoring bits enable the host processor
to have more visibility into the status of the IC. The monitor
bits are real-time status indicators and are not internally
debounced or otherwise time qualified.
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
21
Table 6. DIS Pin, HZ_MODE and WD_DIS bits Operation
Conditions
Functionality
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will disable
the charger and put the IC into High-Impedance Mode.
Resetting the HZ_MODE bit or the DIS pin to LOW will allow charging to resume.
WD_DIS = 1 and VBAT > VLOWV
While in High-Impedance mode, if VBAT drops below VLOWV, all registers (except
SAFETY), including HZ_MODE and CE# are reset. Note that charge parameters
will need to be reprogrammed in order to completely charge the battery.
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will reset all
registers (except SAFETY), including HZ_MODE and CE#.
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will stop the
t32S timer from advancing (does not reset it), disable the charger, and put the IC
into High-Impedance Mode.
WD_DIS = 1 and VBAT < VLOWV
WD_DIS = 0 and VBAT > VLOWV
Resetting the HZ_MODE bit or the DIS pin to LOW will allow charging to resume.
Setting either the HZ_MODE bit through I2C or the DIS pin to HIGH will disable
the charger and put the IC into High-Impedance Mode. The T32S timer will
continue to run. If the T32S timer is allowed to overflow, all registers (except
SAFETY) are reset, including WD_DIS, HZ_MODE and CE#.
WD_DIS = 0 and VBAT < VLOWV
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
22
Flow Charts
VBUS POR
CHARGE STATE
Linear Charging,
Reset SAFETY reg
YES
VBAT < VSHORT
NO
YES
VBAT < VSHORT
Enable PWM
NO
Write TMR_RST
within 2sec ?
Reset all registers,
except SAFETY
NO
FIRST TIME?
YES
NO
Enable PWM
YES
CE# = 1
NO
Enable Linear
Charge and Q5
YES
Disable Q5 &
Linear Charge
IDLE State
NO
CE# = 1
NO
VBAT < VBATMIN
YES
Enable Fast
charge
IDLE State
YES
Protection
switch closed?
YES
Enable Precharge
charging
NO
Battery
Present ?
IOUT < ITERM
and TE = 1
YES
NO
Indicate Charge
Complete
NO
YES
Set NOBAT bit
PWM ON
Q4 and Q5 OFF
Reset charge
parameters &
SAFETY reg
VBAT
<
NO
VOREG – VRCH
?
VBUS OK ?
NO
YES
Disable PWM for
2 seconds
EOC = 1
NO
YES
YES
Note: Reset Charge Parameters is a condition
that results in the SAFETY, OREG, IOCHARGE,
IBUSLIM, ITERM, and VLOWV register bits
resetting. It does not reset the IO_Level, EOC,
and TE register bits.
Indicate
VBUS Fault
Figure 35. Charge State Flow Chart
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
23
Standby
State
PWM = OFF
Q4, Q5 = ON
A Register
Written?
NO
YES
HZ or
DISABLE Pin
set?
Charge State
NO
YES
HZ STATE
Figure 36. Standby State
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
24
10. If IOCHARGE is programmed to less than 650 mA, the
charge current is limited to 340 mA.
Non-Charging States
Sleep Mode
When VBUS falls below VBAT + VSLP and VBUS is above
VIN(MIN)2, the IC enters Sleep Mode to prevent the battery
from draining into VBUS. During Sleep Mode, reverse
current is disabled by body switching Q1.
Thermistors with other values can be used, with some shift
in the corresponding temperature threshold, as shown in
Table 9.
Table 9. Thermistor Temperature Thresholds
RREF = RTHRM at 25°C.
Idle State
Parameter
Various Thermistors
The Idle State is related to the condition of the battery.
During Idle mode the Switch Mode Power Supply (SMPS) is
operating, but the battery is not being charged for one or
more of the following conditions exists: the Safety Timer
expires, charging is complete, or the BATFET is disabled by
the Charge Enable bit, CE# = “1”.
RTHRM(25°C)
10 kΩ
3380
0°C
10 kΩ
3940
3°C
47 kΩ
4050
6
100 kΩ
4250
8
T1
T2
T3
T4
10°C
45°C
60°C
12°C
42°C
55°C
13
14
The PWM Buck continues to supply power to the system, but
the Battery is no longer being charged and the BATFET is
disabled.
41
40
53
51
Standby State
The host processor can disable temperature-driven control
of charging parameters by writing “1” to the TEMP_DIS bit.
Since TEMP_DIS is reset whenever the IC resets its
registers, the temperature controls are enforced whenever
the IC is auto-charging, since auto-charge is always
preceeded by a reset of registers.
The Standby State is an intermediate state where the switch
mode supply is off due to either bad input power, the device
has been put in High-Impedance Mode, or the die
temperature is too hot.
To disable the thermistor circuit, tie the NTC pin to GND.
Before enabling the charger, the IC tests to see if NTC is
shorted to GND. If NTC is shorted to GND, no thermistor
readings occur and the NTC_OK and NTC1-NTC4 is reset.
Charger Protection
Battery Temperature (NTC) Monitor
The FAN54053 reduces the maximum charge current and
termination voltage if an NTC measuring battery temperature
(TBAT) indicates that it is outside the fast-charging limits (T2
to T3), as described in the JEITA specification1. There are
four temperature thresholds that change battery charger
operation: T1, T2, T3, and T4, shown in Table 7.
The IC first measures the NTC immediately prior to entering
any PWM charging state, then measures the NTC once per
second, updating the result in NTC1-NTC4 bits (REG
12h[3:0]).
Table 10. NTC1-NTC4 Decoding
TBAT (°C)
Above T4
NTC4 NTC3 NTC2 NTC1
Table 7. Battery Temperature Thresholds
1
0
0
0
0
1
1
0
0
0
1
1
1
0
0
1
1
1
1
0
For use with 10 kΩ NTC, = 3380, and RREF = 10 kΩ.
Between T3 and T4
Between T2 and T3
Between T1 and T2
Below T1
Threshold
Temperature
0°C
% of VREF
73.9
T1
T2
T3
T4
10°C
64.6
45°C
32.9
60°C
23.3
Safety Register Settings
The IC contains a SAFETY register (REG06h) that prevents
the values in OREG (REG02h[7:2]) and IOCHARGE
(REG04h[7:4]) from exceeding the values of VSAFE
(REG06h[3:0]) and ISAFE (REG06h[7:4]) in the SAFETY
register.
Table 8. Charge Parameters vs. TBAT
TBAT (°C)
Below T1
ICHARGE
VFLOAT
Charging to VBAT Disabled
Between T1 and T2
Between T2 and T3
Between T3 and T4
Above T4
IOCHARGE / 2(10)
4.0 V
VOREG
4.0 V
After VBAT rises above VSHORT, the SAFETY register is
loaded with its default value and may be written to only
before writing to any other register. The same 8-bit value
should be written to the SAFETY register twice to set the
register value. After writing to any other register, the
IOCHARGE
IOCHARGE / 2(10)
Charging to VBAT Disabled
Note:
SAFETY register is locked until VBAT falls below VSHORT
.
If the host attempts to write a value higher than VSAFE or
ISAFE to OREG or IOCHARGE, respectively; the VSAFE,
ISAFE value appears as the OREG, IOCHARGE register value,
respectively.
1
Japan Electronics and Information Technology Industries
Association (JEITA) and Battery Association of Japan. “A Guide to
the Safe Use of Secondary Lithium Ion Batteries in Notebook-type
Personal Computers,” April 28, 2007.
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
25
The Safety register is reset when the battery is below 3.0 V
and power is removed from the VBUS if CE# = “1”. The
Safety register can be re-written to if it is the first I2C write
anytime after the VBUS removal.
Charge Mode Battery Detection & Protection
VBAT Over-Voltage Protection
The OREG voltage regulation loop prevents VBAT from
overshooting VOREG by more than 50 mV when the battery is
removed. When the PWM charger runs with no battery, the
TE bit is not set and a battery is inserted that is charged to a
voltage higher than VOREG; PWM pulses stop. If no further
pulses occur for 30 ms, the IC sets the FAULT bits to “100”,
sets the STAT bits to “11”, and pulses the STAT pin
See VSAFE and ISAFE Register Bit Definitions
Thermal Regulation and Shutdown
When the IC’s junction temperature reaches TCF (about
120°C), the charger reduces its output current to 550 mA to
prevent overheating. If the temperature increases beyond
TSHUTDOWN; charging is suspended, the FAULT bits are set to
101, and STAT is pulsed high. In Suspend Mode, all timers
stop and the state of the IC’s logic is preserved. Charging
resumes at programmed current after the die cools to about
120°C.
Battery Detection during Charging
The IC can detect the presence, absence, or removal of a
battery if the termination bit (TE) is set to “1” and CE# = “0”.
During normal charging, once VBAT is close to VOREG and the
charge current falls below ITERM; the PWM charger continues
to provide power to SYS and Q4 is turned off. It then turns
on a discharge current, IDETECT, for tDETECT. If VBAT is still above
VOREG – VRCH, the battery is present and the IC sets the STAT
bits to “10” (Charge Done). If VBAT is below VOREG – VRCH, the
battery is absent and the IC:
Note that as power dissipation increases, the effective JA
decreases due to the larger difference between the die
temperature and ambient.
Charge Mode Input Supply Protection
Input Supply Low-Voltage Detection
1. Sets the charging parameters to their default values.
The IC continuously monitors VBUS during charging. If VBUS
falls below VIN(MIN)2, the IC:
2. Sets the FAULT bits to “111” (Battery Absent) and sets
the NOBAT bit.
1. Terminates charging
3. If EOC = “0”, the IC turns off the PWM for tINT, then
resumes charging and retries Battery Detection. If the
battery is still absent, the process repeats with the “No
Battery” fault re-enunciated.
2. Pulses the STAT pin, sets the STAT bits to “11”, and
sets the FAULT bits to “011”.
If VBUS recovers above the VIN(MIN)1 rising threshold after time
tINT (about two seconds), the charging process is repeated.
This function prevents the USB power bus from collapsing or
oscillating when the IC is connected to a suspended USB
port or a low-current-capable OTG device.
4. If EOC = “1”, the PWM remains on to provide power to
SYS, but charge termination and the battery absent test
are performed every tINT
.
Linear Charging
Input Over-Voltage Detection
If the battery voltage is below the short-circuit threshold
(VSHORT); a linear current source, ISHORT, charges VBAT until
When the VBUS exceeds VBUSOVP, the IC:
VBAT > VSHORT
.
1. Turns off Q3
2. Suspends charging
3. Sets the FAULT bits to “001”, sets the STAT bits to
“11”, and pulses the STAT pin.
Production Test Mode (PTM)
PTM provides 4.20 V at up to 2.3 A to VBAT when VBUS
5.5 V ±5%.
=
When VBUS falls about 100 mV below VBUSOVP, the fault
is cleared and charging resumes after VBUS is revalidated.
The IC enters PTM when the PROD (REG05h[6]) bit is set
after the NOBAT (REG11h[3]) bit has been set. The NOBAT
bit indicates that the IC has detected battery absence. A
battery absence detection test is performed automatically at
current termination. The steps for entering PTM should
include: set the TE (REG01h[3]) bit high, set the CE#
(REG01h[2]) bit low, wait for the NOBAT bit to set HIGH,
then set the PROD bit to “1” to enter PTM. Battery absence
detection is completed within 500 ms from the time that CE#
is set.
SYS Short During Discharge / Supplemental Mode
Caution should be taken to ensure the SYS pin is not
shorted when connected to a battery. This condition can
induce high current flow through the BATFET (Q4) and the
external FET (Q5) until the battery’s own safety circuit trips.
The resulting high current can damage the IC.
VBUS Short While Charging
If VBUS is shorted with a very low impedance while the IC is
charging with IBUSLIM = 100 mA, the IC may not meet
datasheet specifications until power is removed. To trigger
this condition, VBUS must be driven from 5 V to GND with a
high slew rate. Achieving this slew rate requires a 0 short
to the USB cable less than 10 cm from the connector.
In PTM, the GATE bit (REG11h[7]) is LOW, Q5 is on, and all
auxiliary control loops are disabled. Only the OREG loop is
active, which controls VBAT to 4.20 V, regardless of the
OREG register setting. Thermal shutdown remains active.
During PTM, high current pulses (load currents greater than
1.5 A) must be limited to 20% duty cycle with a minimum
period of 10 ms.
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
26
PFM Mode
Boost Mode
If VBUS > VREFBOOST (nominally 5.07 V) when the minimum
off-time ends, the regulator enters PFM Mode. Boost pulses
are inhibited until VBUS < VREFBOOST. The minimum on-time
is increased to enable the output to pump up sufficiently with
each PFM boost pulse. Therefore, the regulator behaves like
a constant on-time regulator, with the bottom of its output
voltage ripple at 5.07 V in PFM Mode.
Boost Mode can be enabled if the IC is in 32-Second Mode
by setting the OPA_MODE REG01h[0]) bit HIGH and
clearing the HZ_MODE bit.
Table 11. Enabling Boost
HZ_MODE
OPA_MODE
BOOST
Enabled
Disabled
Disabled
0
1
X
1
X
0
Table 12. Boost PWM Operating States
Mode
Description
Invoked When
LIN
SS
Linear Startup
VBAT > VBUS
VBUS < VBST
To remain in Boost Mode, the TMR_RST must be set by the
host before the t32S timer times out. If t32S times out in Boost
Mode; the IC resets all registers, pulses the STAT pin, sets
the FAULT bits to 110, and resets the BOOST bit. VBUS
POR or reading R0 clears the fault condition.
Boost Soft-Start
VBAT > UVLOBST and
SS Completed
BST
Boost Operating Mode
Startup
Boost PWM Control
When the boost regulator is shut down, current flow is
prevented from VBAT to VBUS, as well as reverse flow from
VBUS to VBAT.
The IC uses a minimum on-time and computed minimum off-
time to regulate VBUS. The regulator achieves excellent
transient response by employing current-mode modulation.
This technique causes the regulator to exhibit a load line.
During fast charging, the output voltage drops slightly as the
input current rises. With a constant VBAT, this appears as a
constant output resistance.
LIN State
When EN rises, if VBAT > UVLOBST; the regulator first
attempts to bring PMID within 400 mV of VBAT using an
internal 450 mA current limited source from VBAT (LIN State).
If PMID has not achieved VBAT – 400 mV after 560 s, a fault
state is initiated.
The “droop” caused by the output resistance when a load is
applied allows the regulator to respond smoothly to load
transients with no undershoot from the load line. This can be
seen in Figure 31 and Figure 37.
SS State
When PMID > VBAT – 400 mV, the boost regulator begins
switching with a reduced peak current limit of about 50% of
its normal current limit. The output slews up until VBUS is
within 5% of its setpoint; at which time, the regulation loop is
closed and the current limit is set to 100%.
400
360
320
280
240
200
If the output fails to achieve 95% of its setpoint (VBST) within
128 s, the current limit is increased to 100%. If the output
fails to achieve 95% of its setpoint after this second 384 s
period, a fault state is initiated.
BST State
This is the normal operating mode of the regulator. The
regulator uses a minimum tOFF-minimum tON modulation
2.0
2.5
3.0
3.5
4.0
4.5
V
IN
scheme. The minimum tOFF is proportional to
, which
Battery Voltage, VBAT (V)
V
OUT
Figure 37. Output Resistance (ROUT
)
keeps the regulator’s switching frequency reasonably
constant in CCM. tON(MIN) is proportional to VBAT and is a
higher value if the inductor current reached 0 before tOFF(MIN)
in the prior cycle.
VBUS as a function of ILOAD can be computed when the
regulator is in PWM Mode (continuous conduction) as:
VOUT 5.07 ROUT ILOAD
EQ. 1
To ensure VBUS does not overshoot the regulation point, the
boost switch remains off as long as VFB > VREF(BST)
.
At VBAT=3.0 V and ILOAD=300 mA, VBUS drops to:
Boost Faults
VOUT 5.07 0.300.3 4.98V
EQ. 2
EQ. 3
If a BOOST fault occurs:
1. The STAT pin pulses.
2. OPA_MODE bit is reset.
At VBAT=3.6 V and ILOAD=500 mA, VBUS drops to:
VOUT 5.07 0.240.5 4.95V
3. The power stage is in High-Impedance Mode.
4. The FAULT bits (REG0[2:0]) are set per Table 13.
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
27
Restart After Boost Faults
Data change allowed
OPA_MODE is reset on boost faults. Boost Mode can only
be re-enabled by setting the OPA_MODE bit.
SDA
SCL
Table 13. Fault Bits During Boost Mode
Fault Bit
tH
Fault (REG00h[2:0]) Description
B2 B1 B0
tSU
0
0
0
0
0
1
Normal (no fault)
VBUS > VBUSOVP
Figure 38. Data Transfer Timing
VBUS fails to achieve the voltage required to
advance to the next state during soft-start
or sustained (>50 s) current limit during the
BST state.
Each bus transaction begins and ends with SDA and SCL
HIGH. A transaction begins with a START condition, which is
defined as SDA transitioning from 1 to 0 with SCL HIGH, as
shown in Figure 39.
0
1
0
0
1
1
1
1
1
0
0
1
1
1
0
1
0
1
VBAT < UVLOBST
tHD;STA
Slave Address
MS Bit
NA: This code does not appear.
Thermal shutdown
SDA
SCL
Timer fault; all registers reset.
NA: This code does not appear.
Figure 39. Start Bit
Transactions end with a STOP condition, which is SDA
I2C Interface
transitioning from 0 to 1 with SCL HIGH, as shown in Figure
40.
The FAN54053’s serial interface is compatible with
Standard, Fast, Fast Plus, and High-Speed Mode I2C bus
specifications. The FAN54053 SCL line is an input and the
SDA line is a bi-directional open-drain output; it can only pull
down the bus when active. The SDA line only pulls LOW
during data reads and when signaling ACK. All data is
shifted in MSB (bit 7) first.
Slave Releases
Master Drives
tHD;STO
ACK(0) or
NACK(1)
SDA
SCL
Slave Address
Table 14. I2C Slave Address Byte
Figure 40. Stop Bit
During a read from the FAN54053 Figure 43 the master
issues a Repeated Start after sending the register address
and before resending the slave address. The Repeated Start
is a 1-to-0 transition on SDA while SCL is HIGH, as shown in
Figure 41.
7
6
5
4
3
2
1
0
1
1
0
1
0
1
1
R/W
In hex notation, the slave address assumes a 0 LSB. The
hex slave address is D6h for all parts in the family. Other
slave addresses can be accommodated upon request.
Contact a Fairchild Semiconductor representative.
Bus Timing
Shown in Figure 38, data is normally transferred when SCL
is LOW. Data is clocked in on the rising edge of SCL.
Typically, data transitions shortly at or after the falling edge
of SCL to allow ample time for the data to set up before the
next SCL rising edge.
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
28
High-Speed (HS) Mode
Read and Write Transactions
The protocols for High-Speed (HS), Low-Speed (LS), and
Fast-Speed (FS) Modes are identical except the bus speed
for HS Mode is 3.4 MHz. HS Mode is entered when the bus
master sends the HS master code 00001XXX after a start
condition. The master code is sent in Fast or Fast Plus Mode
(less than 1 MHz clock); slaves do not ACK the
transmission.
The figures below outline the sequences for data read and
write. Bus control is signified by the shading of the packet,
Master Drives Bus
All addresses and data are MSB first.
Table 15. Bit Definitions for Figure 42- Figure 45
Slave Drives Bus
defined as
and
.
Symbol
Definition
START, see Figure 39
The master then generates a repeated start condition that
causes all slaves on the bus to switch to HS Mode. The
master then sends I2C packets, as described above, using
the HS Mode clock rate and timing.
S
ACK. The slave drives SDA to 0 to acknowledge
the preceding packet.
A
A
The bus remains in HS Mode until a stop bit is sent by the
master. While in HS Mode, packets are separated by
repeated start conditions Figure 41.
NACK. The slave sends a 1 to NACK the
preceding packet.
R
P
Repeated START, see Figure 41
STOP, see Figure 40
Slave Releases
tSU;STA
tHD;STA
ACK(0) or
NACK(1)
SLADDR
MS Bit
SDA
SCL
Multi-Byte (Sequential) Read and Write
Transactions
Sequential Write
Figure 41. Repeated Start Timing
The Slave Address, Reg Addr address, and the first data
byte are transmitted to the FAN54053 in the same way as in
a byte write Figure 42. However, instead of generating a
Stop condition, the master transmits additional bytes that are
written to consecutive sequential registers after the falling
edge of the eighth bit. After the last byte written and its ACK
bit received, the master issues a STOP bit. The IC contains
an 8-bit counter that increments the address pointer after
each byte is written.
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
29
condition. This directs the slave’s I2C logic to transmit the
next sequentially addressed 8-bit word. The FAN54053
contains an 8-bit counter that increments the address pointer
after each byte is read, which allows the entire memory
contents to be read during one I2C transaction.
Sequential Read
Sequential reads are initiated in the same way as a single-
byte read , except that once the slave transmits the first data
byte, the master issues an acknowledge instead of a STOP
Figure 42. Single-Byte Write Transaction
Figure 43. Single-Byte Read Transaction
Figure 44. Multi-Byte (Sequential) Write Transaction
Figure 45.
Multi-Byte (Sequential) Read Transaction
© 2014 Fairchild Semiconductor Corporation
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FAN54053 • Rev. 1.4
30
Register Descriptions
The Twelve user-accessible IC registers are defined in Table 17.
Table 16. I2C Register Map
Register
BIT NAME
Name
REG#
7
6
5
4
3
2
1
0
CONTROL0
CONTROL1
OREG
0H
1H
2H
3H
4H
TMR_RST
EN_STAT
STAT
BOOST
TE
FAULT
HZ_MODE
DBAT_B
IBUSLIM
VLOWV
CE#
OPA_MODE
EOC
OREG
IC_INFO
IBAT
Vendor Code
RESET
PN
IOCHARGE
REVISION
ITERM
VBUS_
CONTROL
5H
6H
Reserved
PROD
IO_LEVEL VBUS_CON
SP
VBUSLIM
SAFETY
ISAFE
Reserved
VSAFE
POST_
CHARGING
7H
Reserved
VBUS_LOAD
PC_EN
PC_IT
MONITOR0
MONITOR1
NTC
10H ITERM_CMP VBAT_CMP
LINCHG
POK_B
T_120
DIS_LEVEL
NTC_OK
Reserved
ICHG
NOBAT
NTC4
IBUS
PC_ON
NTC3
VBUS_VALID
Reserved
NTC2
CV
11H
12H
GATE
Reserved
VBAT
Reserved
NTC1
TEMP_DIS
Reserved
WD_CONTROL 13H
RESTART FA
Reserved
Reserved
Reserved EN_REG
WD_DIS
Reserved
RESTART
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
31
Table 17. Register Bit Definitions
This table defines the operation of each register bit. Default values are in bold text.
Bit
Name
Value Type
Description
Register Address: 00h(0) Default Value=0100 0000 (40h)
CONTROL0
Writing a 1 resets the t32S timer; writing a 0 has no effect.
Reading this bit always returns 0
0
7
6
TMR_RST
W
Prevents STAT pin from going LOW during charging; STAT pin still pulses to
enunciate faults
0
R/W
EN_STAT
1
Enables STAT pin to be LOW when IC is charging
Bit
STAT Description
5
0
0
1
1
4
0
1
0
1
Standby
00
5:4
3
STAT
R
R
PWM enabled. Charging is occurring if CE# = 0
Charge Done
Fault
0
IC is not in Boost Mode
IC is in Boost Mode
Fault Bit
BOOST
1
Type
FAULT Description
2
1
0
0
0
0
R
R
Normal (No Fault)
VBUS OVP
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
RC Sleep Mode
See
table
to the
right.
R
R
R
Poor Input Source
000
2:0
FAULT
Battery OVP
Thermal Shutdown
RC Timer Fault
RC No Battery
For Boost Mode faults, see Table 13.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
32
Bit
Name
Value Type
Description
Default Value=0011 0100 (34h)
CONTROL1
Register Address: 01h(1)
Input current limit
Bit
IBUSLIM (mA)
7
0
0
1
1
6
0
1
0
1
00
11
7:6
5:4
IBUSLIM
R/W
R/W
475
760
1080
No Limit
Weak battery voltage threshold
Bit
VLOWV (V)
5
0
0
1
1
4
0
1
0
1
VLOWV
3.4
3.5
3.6
3.7
0
1
3
2
TE
R/W Setting the TE bit to a 1 will enable Charge Termination.
This is an active low bit and by setting the bit to a “0” will enable Charging. When
CE#
R/W
the bit is reset, it will return to the “1” state and charging will be disabled.
Setting this bit to a “1” puts the device in
High Impendance mode.
0
0
1
0
HZ_MODE
R/W
See Table 11
The device is in Charge Mode when the
R/W OPA_MODE bit = 0 and in Boost Operation
when the bit = 1.
OPA_MODE
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
33
Bit
Name
Value Type
Description
Default Value=0000 1000 (08h)
OREG
Register Address: 02h(2)
Charger output “float” voltage; programmable from 3.51 to 4.45 V in 20 mV
increments.
Dec
0
1
2
3
4
5
6
7
Hex
00
01
02
03
04
05
06
07
08
09
0A
0B
0C
0D
0E
0F
VOREG
3.51
3.53
3.55
3.57
3.59
3.61
3.63
3.65
3.67
3.69
3.71
3.73
3.75
3.77
3.79
3.81
Dec
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Hex
10
11
12
13
14
15
16
17
18
19
1A
1B
1C
1D
1E
1F
VOREG
3.83
3.85
3.87
3.89
3.91
3.93
3.95
3.97
3.99
4.01
4.03
4.05
4.07
4.09
4.11
4.13
Dec
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
Hex
20
21
22
23
24
25
26
27
28
29
2A
2B
2C
2D
2E
VOREG
4.15
4.17
4.19
4.21
4.23
4.25
4.27
4.29
4.31
4.33
4.35
4.37
4.39
4.41
4.43
000010
7:2
OREG
R/W
8
9
10
11
12
13
14
15
47-63 2F-3F 4.45
Indicates that the IC detected a dead battery after VBUS_POR. Writing a 0 to this
bit is ignored.
0
R/W
R/W
The IC sets this bit to 1 if a dead battery (VBAT < VSHORT) was not detected at
VBUS_POR.
1
DBAT_B
1
If the host sets this bit while the IC is charging the battery and DBAT_B is LOW,
normal Precharge or Fast charging proceeds.
If TE = ”1”, and no battery is detected at ITERM, the IC turns off the PWM for TINT
,
then resumes charging and retries Battery Detection. If the battery is still absent,
the process repeats with the “No Battery” fault re-enunciated, and sets the charging
parameters to the default values (see Charge State Flow Chart)
0
0
EOC
If no battery is detected when a full battery (end of charge) is reached, the PWM
charger stays on, allowing the host processor to continue to run with no battery.
1
IC_INFO
Register Address: 03h(3)
Default Value=1001 0XXX (9Xh)
10
7:6
5:3
2:0
Vendor Code
PN
R
R
R
Identifies Fairchild Semiconductor as the IC supplier
Part number bits, see the Ordering Information
010
REV
IC Revision, revision 1.X, where X is the decimal of these three bits
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
34
Bit
Name
Value Type
Description
Default Value=1000 0001 (81h)
IBAT
Register Address: 04h(4)
Conditions
Functionality
Setting the RESET bit clears all registers (except
Valid VBUS, VBAT > VLOWV SAFETY and CE#) including WD_DIS and
HZ_MODE.
Setting the RESET bit clears all registers (except
SAFETY) including WD_DIS, HZ_MODE and CE#.
7
RESET
1
W
Valid VBUS, VBAT < VLOWV
Setting the RESET bit clears all registers (except
Absent VBUS
SAFETY and CE#) including WD_DIS and
HZ_MODE.
Writing a 0 has no effect; read returns 1
Programs the maximum charge current (550 mA default)
Bit
IOCHARGE (mA)
6
0
0
0
0
0
0
0
0
1
1
5
0
0
0
0
1
1
1
1
0
0
4
0
0
1
1
0
0
1
1
0
0
3
0
1
0
1
0
1
0
1
0
1
550
650
750
850
950
1,050
1,150
1,250
1,350
1,450
1,550
0000
6:3
IOCHARGE
R/W
1010-1111
Sets the current used for charging termination
Bit
ITERM (mA)
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
50
100
150
200
250
300
350
400
001
2:0
ITERM
R/W
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
35
Bit
Name
Value Type
Description
Default Value=001X X100
VBUS_CONTROL
Register Address: 05h(5)
0
0
1
7
6
Reserved
PROD
R
This bit always returns 0
R/W Charger operates in Normal Mode.
Charger operates in Production Test Mode.
Battery current is controlled by IOCHARGE and IBUSLIM bits while Fast Charging. During
Precharge Mode, battery current is limited to 450 mA when IOCHARGE < 750 mA and
730 mA when IOCHARGE > 750 mA. IBUSLIM bits must be set to “10” or “11” or
IO_LEVEL current will remain at 200 mA.
0
R/W
5
IO_LEVEL
1
Battery current control is set to 200 mA for Fast Charge and Precharge Mode.
1 Indicates that VBUS is above 4.4 V (rising) or 3.8 V (falling). When VBUS_CON
changes from 0 to 1, a STAT pulse occurs.
4
3
VBUS_CON
VLIM
R
R
0
1
VBUS control loop is not active (VBUS is able to stay above VBUSLIM
)
VBUS control loop is active and VBUS is being regulated to VBUSLIM
VBUS control voltage reference
Bit
VBUSLIM (V)
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
4.213
4.293
4.373
4.453
4.533
4.613
4.693
4.773
100
2:0
VBUSLIM
R/W
SAFETY
Register Address: 06h(6)
Default Value=0100 0000 (4Ah)
Sets the maximum IOCHARGE value used by the control circuit
Bit
IOCHARGE(MAX) (mA)
7
0
0
0
0
0
0
0
0
1
1
6
0
0
0
0
1
1
1
1
0
0
5
0
0
1
1
0
0
1
1
0
0
4
0
1
0
1
0
1
0
1
0
1
550
650
750
850
950
1,050
1,050
1,250
1,350
1,450
1,550
0110
7:4
ISAFE
R/W
1010-1111
Sets the maximum VOREG used by the control circuit
Bit
VOREG(MAX) (V)
3
0
0
0
0
0
0
0
0
1
1
1
1
2
0
0
0
0
1
1
1
1
0
0
0
0
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
4.21
4.23
4.25
4.27
4.29
4.31
4.33
4.35
4.37
4.39
4.41
4.43
4.45
1010
3:0
VSAFE
R/W
1100-1111
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
36
Bit
POST_CHARGING
7:6 Reserved
Name
Value Type
Description
Default Value=0000 0001 (01h)
Register Address: 07h(7)
00
R
These bits always return 0
After charger termination, in the charge done state, these bits control VBUS loading
to improve detection of AC power removal from the AC adapter.
[5:4]
00
VBUS Loading in Charge Done State:
00
5:4 VBUS_LOAD
R/W
None
Load VBUS for 4 ms every two seconds
Load VBUS for 131 ms every two seconds
Load VBUS for 135 ms every two seconds
01
10
11
0
R/W Post charging or background charging feature is disabled
Post charging or background charging feature is enabled
Sets the termination current for post charging
3
PC_EN
PC_IT
1
Bit
PC_IT (mA)
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
50
100
150
200
250
300
350
400
001
2:0
R/W
MONITOR0
Register Address: 10h (16)
Default Value=XXX0 XXXX (XXh)
7
6
5
ITERM_CMP
R
R
R
ITERM comparator output, 1 when ICHARGE > ITERM reference
Output of VBAT comparator, 1 when VBAT < VBUS
VBAT_CMP
LINCHG
1 when 30 mA linear charger ON (VBAT < VSHORT
)
Thermal regulation comparator, 1 when the die temperature is greater than 120°C.
If battery is being charged in Precharge mode, the charge current is limited to
200 mA and in Fast Charge, 550 mA.
4
T_120
R
3
2
1
ICHG
IBUS
R
R
R
0 indicates the ICHARGE loop is controlling the battery charge current.
0 indicates the IBUS (input current) loop is controlling the battery charge current.
1 indicates VBUS has passed validation and is capable of charging.
VBUS_VALID
1 indicates the constant-voltage loop (OREG) is controlling the charger and all
current limiting loops have released.
0
CV
R
MONITOR1
Register Address: 11h (17)
Default Value=XX1X XXX0
The GATE bit indicates the state of the GATE pin. If the bit is “0”, the pin is low,
driving the PFET, Q5 on. A “1” will disable Q5, but current can still flow from battery
to the system through Q5’s body diode.
7
GATE
R
R
A “1” indicates VBAT > VBATMIN in PP charging or VBAT > VLOWV in PWM charging. A
“0” indicates VBAT < VBATMIN in PP charging or VBAT < VLOWV in PWM charging.
6
5
VBAT
POK_B indicates the state of the POK_B pin (see section on POK_B). This bit can
R/W be set to a 1 if VBAT has fallen below VLOWV, in turn the open drain POK_B pin will
be Hi-Z.
1
POK_B
This pin indicates the state of the DIS pin. A “1” indicates the DIS pin is high and the
device is in a Hi-Z state on the input and the PWM controller is not running.
4
3
DIS_LEVEL
NOBAT
R
A “1” on this bit indicates that the device has determined there is no battery
connected.
R
2
PC_ON
R
R
A “1” on this bit indicates that Post charging (background charging) is in progress.
1:0
Reserved
0
These bits always return 0.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
37
Bit
NTC
7:6
Name
Value Type
Description
Default Value=000X XXXX
Register Address: 12H (18)
Reserved
00
R
These bits always return 0.
0
R/W
NTC Temperature measurement results affect charge parameters.
5
TEMP_DIS
NTC Temperature measurement results do not affect charge. Temperature
measurements continue to be updated every second in the NTC1-4 monitor bits.
1
4
3
2
1
0
NTC_OK
NTC4
R
R
R
R
R
0 if NTC is either shorted to GND, open, or shorted to REF.
1 indicates that NTC is above the T4 threshold.
See Battery Temperature (NTC)
Monitor
NTC3
1 indicates that NTC is above the T3 threshold.
NTC2
1 indicates that NTC is above the T2 threshold.
NTC1
1 indicates that NTC is above the T1 threshold.
WD_CONTROL
Register Address: 13h (19)
This bit always returns 0
This bit always returns 1
This bit always returns 1
This bit always returns 0
This bit always returns 1
Default Value = 0110 1110 (6Eh)
0
1
1
0
1
7
6
5
4
3
Reserved
R
R
R
R
R
Reserved
Reserved
Reserved
Reserved
The EN_VREG defaults to a “1” enabling the regulator. To disable the regulator, set
the bit to a “0”.
1
R/W
2
EN_VREG
A “1” disables the Watchdog (t32s) and t15MIN timers. Setting the bit to a “0” will
enable the timers (See Safety Timer Section for further information).
1
R/W
1
0
WD_DIS
Reserved
0
R
This bit always returns 0
RESTART
Register Address: FAh (250)
Default Value = 1111 1111 (FFh)
Writing B5h restarts charging when the IC is in the charge done state. This register
reads back FF.
7:0 RESTART
W
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
38
PCB Layout Recommendation
Bypass capacitors should be placed as close to the IC as
possible. In particular, the total loop length for CMID should
be minimized to reduce overshoot and ringing on the SW,
PMID, and VBUS pins. Power and ground pins should be
routed directly to their bypass capacitors using the top
copper layer. The copper area connecting to the IC should
be maximized to improve thermal performance.
Figure 46. PCB Layout Recommendation
Product-Specific Dimensions
Product
D
E
X
Y
FAN54053UCX
2.40 ±0.030
2.00 ±0.030
0.180
0.380
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN54053 • Rev. 1.4
39
0.03 C
F
E
A
2X
1.60
0.40
B
(Ø0.200)
Cu Pad
A1
BALL A1
INDEX AREA
(Ø0.300)
Solder Mask
1.60
D
0.40
0.03 C
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
2X
TOP VIEW
0.06 C
0.625
0.378±0.018
0.208±0.021
0.547
0.05 C
E
SIDE VIEWS
C
SEATING PLANE
D
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE
PER ASMEY14.5M, 1994.
1.60
0.40
0.005
C A B
Ø0.260±0.02
25X
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
E
D
C
B
E. PACKAGE NOMINAL HEIGHT IS 586 MICRONS
±39 MICRONS (547-625 MICRONS).
1.60
0.40
(Y) ±0.018
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
A
F
2
3
5
4
1
G. DRAWING FILENAME: MKT-UC025AArev3.
(X) ±0.018
BOTTOM VIEW
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