FCD260N65S3 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，DPAK;
| 型号： | FCD260N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，DPAK |
| 文件： | 总10页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCD260N65S3
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 12 A, 260 mW
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
260 mW @ 10 V
12 A
D
Features
G
• 700 V @ T = 150°C
J
• Typ. R
= 222 mW
DS(on)
S
• Ultra Low Gate Charge (Typ. Q = 24 nC)
g
POWER MOSFET
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 248 pF)
oss(eff.)
• These Devices are Pb−Free and are RoHS Compliant
D
Applications
G
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter
S
D−PAK
CASE 369AS
MARKING DIAGRAM
$Y&Z&3&K
FCD
260N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCD260N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019 − Rev. 3
FCD260N65S3/D
FCD260N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
12
A
C
Continuous (T = 100°C)
7.6
C
I
Drain Current
Pulsed (Note 1)
30
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
57
AS
AS
I
2.3
E
0.9
mJ
V/ns
AR
dv/dt
100
20
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
90
W
W/°C
°C
D
Derate Above 25°C
0.72
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 2.3 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 6 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.39
40
Unit
R
R
Thermal Resistance, Junction to Case, Max.
_C/W
q
JC
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
q
2
4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
16 mm
Shipping
FCD260N65S3
FCD260N65S3
D−PAK
330 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FCD260N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.66
0.77
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
1
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.29 mA
2.5
4.5
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 6 A
222
7.4
260
D
g
FS
= 20 V, I = 6 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1010
25
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
248
33
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 6 A, V = 10 V
24
g(tot)
D
GS
(Note 5)
Q
6.1
9.7
8.7
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 6 A,
18
18
49
12
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 5)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
12
30
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 6 A
1.2
V
SD
GS
SD
t
= 400 V, I = 6 A,
251
3.4
ns
mC
rr
DD
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FCD260N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
40
10
30
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
= 20 V
DS
250 ms Pulse Test
10
150°C
25°C
1
−55°C
250 ms Pulse Test
= 25°C
T
C
0.1
1
0.2
1
10
20
3
4
V
5
6
7
8
9
V
DS
, Drain−Source Voltage (V)
, Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
10
1
0.8
0.6
0.4
0.2
0.0
T
C
= 25°C
V
= 0 V
GS
250 ms Pulse Test
150°C
V
GS
= 10 V
25°C
0.1
V
GS
= 20 V
0.01
−55°C
0.001
0.0
0.5
1.0
1.5
0
10
20
30
40
V
, Body Diode Forward Voltage (V)
I , Drain Current (A)
D
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
100000
10000
1000
100
10
8
I
D
= 6 A
V
DS
= 130 V
C
iss
V
DS
= 400 V
6
C
oss
4
10
V
GS
= 0 V
f = 1 MHz
2
C
C
C
= C + C (C = shorted)
iss
gs gd ds
C
1
rss
= C + C
gd
oss
rss
ds
= C
gd
0.1
0
0.1
1
10
100
1000
0
6
12
18
24
30
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCD260N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
I
= 10 V
= 6 A
V
I
= 0 V
= 10 mA
GS
GS
D
D
2.5
2.0
1.5
1.0
0.5
0.0
−50
50
100
150
0
−50
0
50
100
150
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
15
10
5
100
10
1
30 ms
100 ms
1 ms
10 ms
DC
Operation in this Area
is Limited by R
0.1
DS(on)
T
C
= 25°C
T = 150°C
J
Single Pulse
0
0.01
150
1
10
100
1000
25
50
75
100
125
T , Case Temperature (5C)
V
, Drain−Source Voltage (V)
C
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
6
4
2
0
0
130
DS
260
390
520
650
V
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCD260N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.1
0.01
DM
t
1
t
2
Z
q
(t) = r(t) x R
q
JC
JC
R
= 1.39°C/W
q
JC
SINGLE PULSE
10−4
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
J
DM
1
2
0.001
10−5
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
FCD260N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCD260N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
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© Semiconductor Components Industries, LLC, 2019
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