FCD4N60TM [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，3.9 A，1.2 Ω，DPAK;
| 型号： | FCD4N60TM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，3.9 A，1.2 Ω，DPAK PC CD 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：611K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2014 年2 月
FCD4N60
N 沟道SuperFET MOSFET
®
600 V, 3.9 A, 1.2
特性
•
说明
SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓
越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务
器/ 电信电源、平板电视电源、ATX 电源及工业电源应用。
650 V @TJ = 150 °C
•
Typ.RDS(on) = 1.0
• 超低栅极电荷（典型值Qg = 12.8 nC)
• 低有效输出电容（典型值Coss.eff=32 pF)
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
• 照明
• AC-DC 电源
• 光伏逆变器
D
D
G
G
S
D-PAK
S
MOSFET 最大额定值TC =25°C 除非另有说明。
FCD4N60TM
符号
VDSS
参数
单位
600
3.9
2.5
11.7
±30
128
3.9
5.0
4.5
50
V
漏极－源极电压
漏极电流
- 连续(TC=25°C)
- 连续(TC=100°C)
- 脉冲
ID
A
IDM
A
V
漏极电流
（说明1）
VGSS
EAS
IAR
栅极－源极电压
单脉冲雪崩能量
雪崩电流
mJ
A
（说明2）
（说明1）
（说明1）
（说明3）
EAR
dv/dt
mJ
V/ns
W
重复雪崩能量
二极管恢复dv/dt 峰值
(TC = 25°C)
PD
功耗
0.4
W/°C
°C
- 超过25°C 时降低
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
用于焊接的最高引脚温度，
距离外壳1/8”，持续5 秒
300
°C
热性能
FCD4N60TM
符号
RJC
参数
单位
°C/W
°C/W
2.5
83
结至外壳热阻最大值
结至环境热阻最大值
RJA
www.fairchildsemi.com
©2008 飞兆半导体公司
1
FCD4N60 Rev. C1
封装标识与定购信息
器件标识
器件
FCD4N60TM
封装
卷尺寸
带宽
数量
FCD4N60
D-PAK
380mm
16m
2500
电气特性TC =25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
VGS = 0 V, ID = 250 μA, TC = 25°C
VGS = 0 V, ID = 250 μA, TC = 150°C
600
-
-
-
-
V
V
漏极－源极击穿电压
650
BVDSS
/ TJ
BVDS
ID=1 mA，以25°C 为参考
-
0.6
-
V/°C
V
击穿电压温度系数
VGS = 0 V, ID = 3.9 A
-
-
-
-
700
-
1
漏源极雪崩击穿电压
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±30 V, VDS = 0 V
-
-
-
IDSS
IGSS
A
零栅极电压漏极电流
10
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS，ID = 250 A
VGS = 10 V, ID = 2.0 A
VDS = 40 V, ID = 2.0 A
3.0
-
5.0
1.2
-
V
S
栅极阈值电压
-
-
1.0
3.2
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
415
210
19.5
12
540
275
-
pF
pF
pF
pF
pF
输入电容
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
Coss
输出电容
Crss
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
16
-
Cosseff.
VDS = 0 V 至400 V, VGS = 0 V
32
有效输出电容
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
45
45
100
85
70
16.6
-
ns
ns
导通延迟时间
VDD = 300 V, ID = 3.9 A
开通上升时间
R
G = 25
36
ns
关断延迟时间
30
ns
（说明4）
（说明4）
关断下降时间
Qg(tot)
Qgs
Qgd
12.8
2.4
7.1
nC
nC
nC
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
VDS = 480 V, ID = 3.9 A,
GS = 10 V
V
-
漏极- 源极二极管特性
IS
-
-
-
-
-
3.9
11.7
1.4
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
-
-
VGS = 0 V, ISD = 11 A
V
VGS = 0 V, ISD = 11 A
277
ns
dIF/dt = 100 A/s
Qrr
-
2.07
-
C
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温
2. I =1.9 A，V =50 V，R =25 ，开始T =25°C
AS
DD
G
J
3. I 3.9 A，di/dt 200 A/s，V BV
，开始T =25°C
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性
www.fairchildsemi.com
©2008 飞兆半导体公司
2
FCD4N60 Rev. C1
典型性能特征
图1. 导通区域特性
图2. 传输特性
VGS
101
10
Top :
15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
150oC
Bottom : 5.5 V
1
100
25oC
-55oC
* Notes :
1. 250s Pulse Test
* Note
1. VDS = 40V
o
2. TC = 25
C
0.1
2. 250s Pulse Test
10-1
2
0.1
1
10
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源电流和温度的关系
4
101
3
VGS = 10V
2
100
150oC
VGS = 20V
25oC
1
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
2. 250s Pulse Test
10-1
0.2
0
0.0
2.5
5.0
7.5
10.0
12.5
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
1200
1000
800
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 120V
VDS = 300V
VDS = 480V
Crss = Cgd
* Notes :
600
1. VGS = 0 V
6
Coss
Ciss
2. f = 1 MHz
400
4
200
2
* Note : ID = 3.9A
Crss
0
0
0
100
101
5
10
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
www.fairchildsemi.com
©2008 飞兆半导体公司
3
FCD4N60 Rev. C1
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
*Notes :
1. VGS = 0 V
*Notes :
1. VGS = 10 V
2. ID = 250A
2. ID = 2.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [C
TJ, Junction Temperature [oC
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
4
Operation in This Area
is Limited by R DS(on)
101
10 us
3
2
1
0
100 us
1 ms
10 ms
100
DC
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
10-1
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 瞬态热响应曲线
D=0.5
100
0.2
0.1
* Notes
:
1. ZJC(t) = 2.5 oC/W Max.
2. D uty Factor, D =t1/t2
0.05
3. TJM - TC = PDM * ZJC(t)
10-1
0.02
0.01
PDM
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
www.fairchildsemi.com
©2008 飞兆半导体公司
4
FCD4N60 Rev. C1
图12. 栅极电荷测试电路与波形
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I = 常量
G
Charge
图13. 阻性开关测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 非箝位感性开关测试电路与波形
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
www.fairchildsemi.com
©2008 飞兆半导体公司
5
FCD4N60 Rev. C1
图15. 峰值二极管恢复dv/dt 测试电路与波形
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2008 飞兆半导体公司
6
FCD4N60 Rev. C1
机械尺寸
TO-252 3L (DPAK)
图16. TO252 (D-PAK)，模塑，3 引脚，选项AA&AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
尺寸（单位为毫米）
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©2008 飞兆半导体公司
7
FCD4N60 Rev. C1
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
Sync-Lock™
®*
AX-CAP®*
FRFET®
®
BitSiC™
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Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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MicroFET™
MicroPak™
MicroPak2™
PowerTrench®
PowerXS™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
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ESBC™
TinyBoost®
Programmable Active Droop™
TinyBuck®
QFET®
TinyCalc™
QS™
TinyLogic®
Quiet Series™
RapidConfigure™
™
TINYOPTO™
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Saving our world, 1mW/W/kW at a time™
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®
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FAST®
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I66
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©2008 飞兆半导体公司
FCD4N60 Rev. C1
8
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