FCH041N65EFL4 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 4L;
| 型号： | FCH041N65EFL4 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 4L |
| 文件： | 总10页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 76 A, 41 mW
FCH041N65EFL4
Description
SuperFET II Mosfet is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SuperFET II MOSFET is
very suitable for the switching power applications such as PFC, server
/ telecom power, FPD TV power, ATX power and industrial power
applications. SuperFET II FREFET MOSFET’s optimized body diode
reverse recovery performance can remove additional component and
improve system reliability.
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V
R
MAX
I MAX
D
DS
DS(ON)
650 V
41 mW @ 10 V
76 A
D
G
Features
S1: Driver Source
S2: Power Source
• Typ. R
= 36 mW
• 700 V @ T = 150°C
DS(on)
S1
S2
J
• Ultra Low Gate Charge (Typ. Q = 229 nC)
g
N-CHANNEL MOSFET
• Low Effective Output Capacitance (Typ. C
= 631 pF)
oss(eff.)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• AC−DC Power Supply
• LCD/LED/PDP TV
• Solar Inverter
D
S2
S1
G
• Telecom / Server Power Supplies
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K
FCH041N65
EFL4
FCH041N65EFL4 = Specific Device Code
$Y
&Z
&3
K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Week & Year)
= Lot
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2020 − Rev. 3
FCH041N65EFL4/D
FCH041N65EFL4
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
20
V
− AC (f > 1 Hz)
30
I
D
Drain Current:
− Continuous (T = 25°C)
76
A
C
− Continuous (T = 100°C)
48.1
228
C
I
Drain Current:
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
2025
15
AS
AS
I
E
5.95
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
595
W
W/°C
°C
D
C
− Derate Above 25°C
4.76
−55 to + 150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 15 A, R = 25 W, starting T = 25 °C.
AS
G
J
3. I ≤ 38 A, di/dt ≤ 200 A/ms, V ≤ 380 V, starting T = 25 °C.
SD
DD
J
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
FCH041N65EFL4
FCH041N65EF
TO−247 4L
Tube
N/A
N/A
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
FCH041N65EFL4
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.21
40
°C/W
R
q
JC
JA
R
q
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2
FCH041N65EFL4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0 V, I = 10 mA, T = 25°C
650
700
−
−
−
−
−
−
V
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150°C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25°C
0.72
V/°C
mA
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
145
−
10
−
DSS
GS
= 520 V, T = 125 °C
C
I
Gate to Body Leakage Current
=
20 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 7.6 mA
3
−
−
−
5
4
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 38 A
36
D
g
FS
= 20 V, I = 38 A
71.7
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 100 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
9446
366
35
12560
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
oss
rss
oss
DS
GS
C
C
C
Output Capacitance
490
−
Reverse Transfer Capacitance
Output Capacitance
V
DS
V
DS
V
DS
= 380 V, V = 0 V, f = 1 MHz
197
631
229
50
−
GS
C
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 400 V, V = 0 V
−
oss(eff.)
GS
Q
= 380 V, I = 38 A V = 10 V
298
−
g(tot)
D
,
GS
(Note 4)
Q
gs
Q
90
−
gd
ESR
f = 1 MHz
0.6
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−Off Fall Time
V
V
= 380 V, I = 38 A,
−
−
−
−
55
25
120
60
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 4)
t
169
18
348
46
d(off)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
−
76
228
1.2
−
A
A
S
I
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 38 A
−
V
GS
SD
t
rr
= 0 V, I = 38 A,
207
1.5
ns
mC
GS
SD
di /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCH041N65EFL4
TYPICAL CHARACTERISTICS
500
100
200
100
VGS
8.0V
7.0V
6.5V
150oC
6.0V
5.5V
25oC
10
o
−55 C
10
*Notes:
*Notes:
1. 250 ms Pulse Test
2. TC = 25°C
1. V = 20 V
DS
2. 250 ms Pulse Test
1
1
5
6
7
8
4
0.1
1
10
3
VDS, Drain−Source Voltage[V]
VGS, Gate−Source Voltage[V]
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
1000
100
10
0.06
0.05
0.04
0.03
150oC
VGS = 10V
1
25oC
0.1
VGS = 20V
*Notes:
0.01
1. V = 0 V
GS
2. 250 ms Pulse Test
*Note: TC = 25oC
0.001
0.0
0.5
1.0
1.5
2.0
0
40
80
120
160
200
240
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
10
100000
VDS = 130V
VDS = 325V
Ciss
8
10000
1000
100
10
VDS = 520V
6
4
2
Coss
*Notes:
1. V = 0 V
Crss
GS
2. f = 1 MHz
C
C
C
= C + C (C = shorted)
iss
oss
rss
gs
ds
gd
gd
gd
ds
= C + C
*Note: I D = 38A
150 200 250
= C
0
1
0
50
100
0.1
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain−Source Voltage [V]
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FCH041N65EFL4
TYPICAL CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
2.5
2.0
1.5
1.0
0.5
*Notes:
*Notes:
1. V = 0 V
GS
1. V = 10 V
GS
2. I = 10 mA
D
2. I = 38 mA
D
0.0
−75 −50 −25
0
25 50 75 100 125 150
−75 −50 −25
0
25 50 75 100 125 150
TJ, Junction Temperature [ oC]
TJ, Junction Temperature [ oC]
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
80
60
40
20
0
500
10ms
100
10
100ms
1ms
DC
Operation in This Area
is Limited by R
DS(on)
1
*Notes:
1. T = 25°C
0.1
0.01
C
J
2. T = 150°C
3. Single Pulse
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [ oC]
VDS, Drain−Source Voltage [V]
Figure 10. Maximum Drain Current vs.
Case Temperature
Figure 9. Maximum Safe Operating Area
52.0
41.6
31.2
20.8
10.4
0
0
100 200 300 400 500 600 700
VDS, Drain to Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
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5
FCH041N65EFL4
TYPICAL CHARACTERISTICS
0.5
0.1
0.5
0.2
PDM
0.1
0.05
t1
0.01
t2
0.02
0.01
Single pulse
*Notes:
1. Z (t) = 0.21°C/W Max
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JC
JM
C
DM
0.001
10−5
10−4
10−3
10−2
10−1
100
101
t1, Rectangular Pulse Duration [sec]
Figure 12. Transient Thermal Response Curve
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6
FCH041N65EFL4
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCH041N65EFL4
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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