FCH041N65F-F155 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247;
| 型号： | FCH041N65F-F155 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：602K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N ꢀᬣ,
SUPERFET) II, FRFET)
650 V, 76 A, 41 mW
FCH041N65F
ꢁᫀ
www.onsemi.cn
SUPERFET II MOSFET ꢀꢀꢁꢁꢂꢂꢃꢄꢅꢃꢄꢅꢆꢆꢇꢈꢇ
ꢉꢈꢊꢋꢉꢃꢌꢄꢍꢊꢎꢉꢏꢐꢄꢅꢋꢑꢋꢌꢒꢓꢍꢔꢕꢖ (SJ)
MOSFET ꢗꢎꢏꢐ。ꢘꢙꢇꢈ✃ꢃnꢚ෯ӶꢃꢌꢛꢜၖꢝŻԳ
ꢞ ꢋ რ ͓ ꢋ ꢑ 、dv/dt ꢟ ꢑ ꢒ ꢊ ꢎ ꢓ ꢠ ꢓ ꢑ ꢡ 。 ꢔ ꢢ ，
SUPERFET II MOSFET ꢣꢕꢤꢖრ͓ꢄꢥꢗꢃ，ꢘꢙꢦꢔꢧꢨ
ꢩꢀ(PFC)、ꢪꢚꢛꢀ/ ꢄꢜꢄꢥ、ꢆꢫꢄꢬꢄꢥ、ꢀATX ꢄꢥꢝꢞ
ꢟꢄꢥꢗꢃ。SUPERFET II FRFET MOSFET ꢠӶꢄꢡꢐꢭꢋꢢ
ꢣꢤꢥꢋꢑꢦꢧꢮꢟꢨꢩꢪ，ꢝꢓꢗꢯꢦꢰꢋ。
V
R
MAX
I MAX
D
DS
DS(ON)
650 V
41 mW @ 10 V
76 A
D
ꢂ
•ꢫ700 V @ T = 150°C
J
G
•ꢫꢬꢭꢒ R
= 36 mW
DS(on))
•ꢫꢔꢉꢏꢐꢄꢅ (ꢬꢭꢒQ = 226 nC)
g
S
•ꢫꢉꢱꢲꢳꢈꢄꢮ (ꢬꢭꢒ C
•ꢫ100% ꢴꢵꢠꢓꢶꢷ
•ꢫꢸꢖ RoHS ꢹꢯ
= 1278 pF)
oss(eff.)
N-CHANNEL MOSFET
S
D
• Pb−Freeꢏꢐ
G
ꢃ✈
•ꢫLCD / LED / PDP TV
•ꢫꢌꢜ / ꢪꢚꢛꢄꢥ
•ꢫꢰꢺꢑꢻꢱꢛ
•ꢫAC−DC ꢄ ꢥ
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FCH
041N65F
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FCH041N65F
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2020 − Rev. 4
FCH041N65FCN/D
FCH041N65F
ভꢄꢅꢆ⍭ꢇꢈ(T = 25°C ꢀꢁꢀꢂꢃꢄ)
C
ꢉ ꢊꢋ
FCH041N65F−F155
ꢌꢍ
V
V
V
ꢅꢆ－⁰ꢆꢇꢁ
᧥ꢆ－⁰ꢆꢇꢁ
650
20
DSS
V
- DC
GSS
- AC
(f > 1 Hz)
30
I
D
ꢅꢆꢇἡ
76
A
- ঽ (T = 25°C)
C
- ঽ (T = 100°C)
48.1
228
C
I
ꢅꢆꢇἡ
- ꢂ (Ỉ 1)
A
mJ
A
DM
E
ꢃꢂ↺༉்Ჟ (Ỉ 2)
↺༉ꢇἡ (Ỉ 1)
Ოꢄ↺༉்Ჟ (Ỉ 1)
MOSFET dv/dt
ꢅꢆ
ٱ
ቂꢄ dv/dt ໐ꢆ (Ỉ 3) ꢇ૧
2025
15
AS
AR
I
E
5.95
100
mJ
V/ns
AR
dv/dt
50
P
595
W
W/°C
°C
(T = 25°C)
C
D
- ▨ꢈ 25°C Ŕꢇ૧
ߋ
ᝐ 4.76
−55 ೃ +150
300
T , T
࿅ꢉꢊꢋꢌꢈႆීꢍ
J
STG
T
✈ꢈ⋪ᖅŔᣠ▨ჵ௪ꢈႆ，ҋꢎꢏ 1/8”，ᓡঽ 5 Ң
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(ꢐᚡᝧ)
ꢑꢇꢁᡕ᪗ᣠꢒ⍭ꢓꢆጸꢔꢕꢖŔꢆීꢍ，ꢗꢘꢙ்ꢚᔿꢛ。ꢑᡕ᪗Ûĵ᪩{℠ꢆ，෦ៀẵƽᚑꢗꢘꢇ்，ꢙ்ꢚොೄꢗꢘᔿꢛ，ᅑ
ڭ
ꢙ∰ሇ。
1. Ოꢄ⍭ꢓꢆ：ꢂඝႆַ℠ꢈᣠꢒꢉꢈ。
2. I = 15 A, R = 25 W, ꢊꢈ T = 25°C
AS
G
J
3. I ≤ 38 A, di/dt ≤ 200 A/ms, V ≤ 380 V, ꢊꢈ T = 25°C.
SD
DD
J
ꢎ᎕ꢏᚖꢐꢇꢑꢒ
ࡈ
Ö০ח
⍆᧧
FCH041N65F
᎕
TO−247−3LD
ӥ᎕យẵ
บෘ
ဆඝ
ᝐᲟ
FCH041N65F−F155
ꢲꢼꢭ
N/A
N/A
30 ꢽ
⋍ꢂ்
ꢉ ꢊꢋ
FCH041N65F−F155
ꢌꢍ
R
R
ꢉೃꢎꢏꢋꢌᣠꢒꢆ
ꢉೃꢍꢋꢌᣠꢒꢆ
0.21
40
°C/W
q
JC
JA
q
www.onsemi.cn
2
FCH041N65F
ꢀꢓꢂ(T = 25°C ꢀꢁꢀꢂꢃꢄ)
C
ꢉ ꢊꢋ
Ἣᚥꢔꢕ
ꢅꢖꢈ ꢗꢘꢈ ꢅꢆꢈ
ꢌꢍ
ꢙꢚꢂ
BV
ꢅꢆ－⁰ꢆϛꢎꢇꢁ
V
V
I
= 0 V, I = 10 mA, T = 25°C
650
700
−
−
−
−
−
−
V
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150°C
GS
D
J
DBV
DT
/
ϛꢎꢇꢁꢈႆ
ߋ
ᝐ = 10 mA, ꢐ 25°C ᝐꢆ
0.72
V/°C
mA
DSS
J
D
I
ꢏ᧥ꢆꢇꢁꢅꢆꢇἡ
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
232
−
10
−
DSS
GS
= 520 V, T = 125°C
C
I
᧥ꢆ - ijꢅꢇἡ
=
20 V, V = 0 V
100
nA
GSS
DS
ꢛꢂ
V
᧥ꢆꢐꢆꢇꢁ
V
GS
V
GS
V
DS
= V , I = 7.6 mA
3
−
−
−
5
41
−
V
mW
S
GS(th)
DS
D
R
ꢅꢆೃ⁰ꢆꢑꢒොꢓꢇꢌ
ꢔ
ױ
ꢕො = 10 V, I = 38 A
36
18
DS(on)
D
g
FS
= 20 V, I = 38 A
D
ꢜꢝꢂ
C
ꢖͅꢇ
V
= 100 V, V = 0 V,
−
−
−
−
−
−
−
−
−
9790
355
32
13020
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
oss
rss
DS
GS
f = 1 MHz
C
C
ꢖꢖꢇ
470
−
֭
ױ
Āꢖꢇ C
ꢖꢖꢇ
V
V
= 380 V, V = 0 V, f = 1 MHz
192
1278
226
50
−
oss
DS
GS
C
ꢂꢗꢖꢖꢇ
= 0 V ೃ 400 V, V = 0 V
−
oss(eff.)
DS
GS
Q
10 V ꢇꢁŔ᧥ꢆꢇꢘꢙᲟ
᧥ꢆ - ⁰ꢆ᧥ꢆꢇꢘ
᧥ꢆ - ꢅꢆ “ ꢚҲ ” ꢇꢘ
ꢛꢗꢜꢜꢇꢌ
V
V
= 380 V, I = 38 A,
294
−
g(tot)
DD
GS
D
= 10 V
Q
gs
(Ỉ 4)
Q
90
−
gd
ESR
f = 1 MHz
0.6
−
ꢞꢙꢂ
t
ොꢓꢝꢞꢟꢠ
ොꢓ⛺ԧꢟꢠ
͓ꢡꢝꢞꢟꢠ
͓ꢡ⛻ꢢꢟꢠ
V
V
= 380 V, I = 38 A,
−
−
−
−
60
47
130
104
390
23
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Ỉ 4)
t
190
6.5
d(off)
t
f
⃯ꢟ-⁰ꢟꢠꢟ
ٱ
ꢂ I
ꢅꢆ - ⁰ꢆꢅꢆ
ٱ
ᣠꢒꢔױ
ঽꢇἡ ꢅꢆ - ⁰ꢆꢅꢆ
ٱ
ᣠꢒꢔױ
ꢂꢇἡ ꢅꢆ - ⁰ꢆꢅꢆ
ٱ
ꢔױ
ꢇꢁ ֭
ױ
ቂꢄꢟꢠ −
−
−
−
−
−
−
76
228
1.2
−
A
A
S
I
SM
V
SD
V
V
= 0 V, I = 38 A
−
V
GS
SD
t
= 0 V, I = 38 A,
213
1.3
ns
mC
rr
GS
F
SD
dI /dt = 100 A/ms
Q
֭
ױ
ቂꢄꢇꢘ −
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢐᚡᝧ)
ꢀꢁꢀꢂꢃꢄ，“ꢇꢣꢤሇ”ጸꢥꢔꢕꢖŔꢦꢧꢕꢨꢩꢪꢘ⛻Ŕ
ڡ
ሇ்ꢐᝐ。ꢑई⛽
ꢪꢘ⛻ꢫꢬ，ڡ
ሇ்ꢙ்⛾“ꢇꢣꢤሇ”ጸꢥ ꢔꢧꢕሇ்ꢐᝐ⛽⛰ೄ。
4. ͘५ꢤሇꢭꢮ⛺ꢯꢰꢈ࿅ꢉꢈႆ。
www.onsemi.cn
3
FCH041N65F
ꢗꢘꢂ்ꢡ
200
100
500
100
V
GS
= 20.0 V
15.0 V
10.0 V
8.0 V
*Notes:
1. V = 20 V
DS
2. 250 ms Pulse Test
150°C
7.0 V
6.5 V
6.0 V
5.5 V
25°C
10
1
10
−55°C
*Notes:
1. 250 ms Pulse Test
2. T = 25°C
C
1
0.1
5
6
7
8
3
4
1
10
V
GS
, Gate−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
ꢢ 1. ꢛԚিꢂꢢ
ꢢ 2. Āᩣꢂ
0.06
0.05
0.04
0.03
1000
100
150°C
10
1
25°C
V
= 10 V
GS
0.1
0.01
*Notes:
V
GS
= 20 V
1. V = 0 V
GS
2. 250 ms Pulse Test
*Note: T = 25°C
C
0.001
0.0
0.5
1.0
1.5
2.0
0
40
80
120 160
200
240
V
, Body Diode Forward Voltage (V)
SD
I , Drain Current (A)
D
ꢢ 3. ꢛꢀℋָӶꢐ⃯ꢟꢀἡ
٬᧥ꢟ
ꢀիŔꢙߋ
ꢢ 4. ijꢠꢟ
ٱ
ᵃױ
ꢀիָӶꢐ⁰ꢟꢀἡ٬
ꢁႆŔꢙߋ
100000
10
C
V
= 130 V
iss
DS
10000
1000
V
V
= 325 V
= 520 V
DS
DS
8
6
4
2
C
oss
100
10
1
*Note:
1. V = 0 V
GS
C
rss
2. f = 1 MHz
C
C
C
= C + C (C = Shorted)
gs gd ds
iss
oss
rss
= C + C
ds
gd
gd
*Note: I = 38 A
= C
D
0.1
1
10
100
1000
200
Q , Total Gate Charge (nC)
240
20
50
100
150
V
DS
, Drain−Source Voltage (V)
g
ꢢ 5. ꢀꢂ
ꢢ 6. ᧥ꢟꢀ็ꢂ
www.onsemi.cn
4
FCH041N65F
ꢗꢘꢂ்ꢡ(ᖅ⛺ꢱ)
1.10
1.05
1.00
0.95
0.90
2.5
2.0
1.5
1.0
0.5
0.0
*Notes:
*Notes:
1. V = 10V
GS
1. V = 0 V
GS
2. I = 38A
2. I = 10 mA
D
D
−75 −50 −25
0
25 50 75 100 125 150
−75 −50 −25
0
25 50 75 100 125 150
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
ꢢ 8. ꢛꢀℋָӶꢐꢁႆŔꢙ
ߋ
ꢢ 7. ϛՏꢀիָӶꢐꢁႆŔꢙ
ߋ
500
100
80
60
40
20
0
10 ms
100 ms
1 ms
DC
10
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T = 25°C
2. T = 150°C
0.1
0.01
C
J
3. Single Pulse
1
10
100
1000
25
50
75
100
125
150
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
ꢢ 10. ꢅꢆ⃯ꢟꢀἡꢐꢣꢁŔꢙ
ߋ
ꢢ 9. ꢅꢆ൩͈࿅ļԚ
54.0
43.2
32.4
21.6
10.8
0
0
132
264
396
528
660
V
DS
, Drain to Source Voltage (V)
ꢢ 11. Eoss ꢐ⃯⁰ꢟꢀիŔꢙ
ߋ
www.onsemi.cn
5
FCH041N65F
ꢗꢘꢂ்ꢡ(ᖅ⛺ꢱ)
0.5
0.1
0.5
0.2
P
DM
0.1
t
1
0.05
0.02
0.01
t
2
*Notes:
1. Z (t) = 0.21°C/W Max.
0.01
Single Pulse
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JC
JM
C
DM
1E−3
−1
0
−2
−5
−4
−3
10
10
10
10
10
10
t , Rectangular Pulse Duration (sec)
1
ꢢ 12. ɼꢝ⋍ꢤꢃꢥএ
www.onsemi.cn
6
FCH041N65F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= ꢲᲟ
Charge
ꢢ 13. ᧥ꢟꢀ็Ἣᚥꢀᢿꢐꢦꢧ
R
L
V
V
DS
90%
90%
90%
V
DS
V
DD
V
GS
R
G
10%
10%
GS
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
ꢢ 14. ℋꢂꢞꢙἫᚥꢀᢿꢐꢦꢧ
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
ꢢ 15. ∮
٭
ꢍꢨꢂꢞꢙἫᚥꢀᢿꢐꢦꢧ www.onsemi.cn
7
FCH041N65F
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
ꢢ 16. ꢠꢟ
ٱ
ꢩꢪdv/dt ꢫꢈἫᚥꢀᢿꢐꢦꢧ SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.cn
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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rights of others.
© Semiconductor Components Industries, LLC, 2018
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onsemi,
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相关型号：
FCH072N60F
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
FAIRCHILD
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