FDB8160-F085 [ONSEMI]
30 V、80 A、1.5 mΩ、D2PAKN 沟道 PowerTrench®;
| 型号： | FDB8160-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 30 V、80 A、1.5 mΩ、D2PAKN 沟道 PowerTrench® 开关 晶体管 |
| 文件： | 总8页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB8160-F085
N-Channel PowerTrench® MOSFET
30V, 80A, 1.8mΩ
Applications
Features
Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A
12V Automotive Load Control
Starter/Alternator Systems
Electronic Power Steering Systems
DC/DC converter
Typ Qg(10) = 187nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
TO-263AB
FDB SERIES
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDB8160-F085/D
1
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current Continuous (TC < 160oC, VGS = 10V)
80
ID
A
Pulsed
See Figure 4
1290
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
(Note 1)
mJ
W
W/oC
oC
254
1.7
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper
pad area
0.59
43
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB8160
FDB8160-F085
TO-263AB
330mm
24mm
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
30
-
-
-
-
-
-
1
V
V
DS = 24V, VGS = 0V
TJ = 150oC
μA
nA
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
D = 80A, VGS= 10V
2
-
2.9
1.5
2.6
4
V
I
1.8
3.1
mΩ
mΩ
ID = 80A, VGS= 10V, TJ = 175°C
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
11825
1810
1240
1.75
187
20
-
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
-
Reverse Transfer Capacitance
Gate Resistance
-
Rg
f = 1MHz
-
243
26
-
Qg(TOT)
Qg(th)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
nC
nC
nC
nC
nC
VGS = 0 to 2V
V
DD = 15V
I
D = 80A
43
Qgs2
Qgd
23
-
57
-
www.onsemi.com
2
Electrical Characteristics TJ = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
60
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
17.2
18.9
60
-
-
VDD = 15V, ID = 80A,
VGS = 10V, RGS = 1.3Ω
td(off)
tf
-
-
27
toff
-
137
Drain-Source Diode Characteristics
I
SD = 80A
-
-
-
-
0.9
0.8
48
1.25
1.0
62
V
V
VSD
Source to Drain Diode Voltage
ISD = 40A
trr
Reverse Recovery Time
ns
nC
IF = 80A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
42
55
Notes:
o
1: Starting T = 25 C, L = 0.63mH, I = 64A
J
AS
2: Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
VGS = 10V
CURRENT LIMITED
BY PACKAGE
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
100
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
www.onsemi.com
4
Typical Characteristics
1000
100
10
3000
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
)
AV
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100
100us
1ms
STARTING TJ = 25oC
SINGLE PULSE
10
T
J
= MAX RATED
o
T
C
= 25
C
STARTING TJ = 150oC
1
OPERATION IN THIS
AREA MAY BE
10ms
LIMITED BY r
DS(on)
100ms
DC
90
1
0.01
0.1
0.1
1
10
100
1000 5000
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 20V
VDD = 5V
120
120
VGS = 10V
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4.5V
VGS = 4V
TJ = 175oC
80
40
0
80
TJ = -55oC
40
TJ = 25oC
0
0.0
0.5
1.0
1.5
0
1
2
3
4
5
6
7
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
8
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
6
4
2
0
TJ = 175oC
ID = 80A
TJ = 25oC
8
VGS = 10V
4
6
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.onsemi.com
5
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 1mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
50000
ID = 80A
VDD = 12V
8
Ciss
10000
6
VDD = 15V
Coss
4
VDD = 18V
1000
Crss
2
0
f = 1MHz
VGS = 0V
100
0.1
1
10
80
0
50
100
150
200
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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